MARKING 32 SOT363 Search Results

8 pin IC 34063

Abstract: 34063 34063 schematic MARKING A2a SOT363
Contextual Info: What H E W LET T 1 "KM PA C K A R D 3.0 GHz Medium Power Silicon RFIC Amplifier Technical Data INA-34063 Features Surface Mount SOT-363 SC-70 Package Applications Pin Connections and Package Marking • +8 dBm Pj dB at 1.9 GHz • 21 dB Gain at 1.9 GHz • High Isolation 32 dB at

Contextual Info: BGA2818 MMIC wideband amplifier Rev. 2 — 1 May 2012 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package.

Contextual Info: CSH210R ? TX-RX and diversity switch for mobile communications ? GaAs PHEMT Technology ? Low Insertion Loss ? No Supply Voltage Needed ? Positive Control Voltage ? SOT363 Package 2mm x 2mm ESD: Electrostatic discharge sensitive device Observe handling Precautions!

CSH210

Contextual Info: CSH210 ? TX-RX and diversity switch for mobile communications ? GaAs PHEMT Technology ? Low Insertion Loss ? No Supply Voltage Needed ? Positive Control Voltage ? SOT363 Package 2mm x 2mm ESD: Electrostatic discharge sensitive device Observe handling Precautions!

CSH210

Contextual Info: CSH210 • TX-RX and diversity switch for mobile communications • GaAs PHEMT Technology • Low Insertion Loss • No Supply Voltage Needed • Positive Control Voltage • SOT363 Package 2mm x 2mm ESD: Electrostatic discharge sensitive device Observe handling Precautions!

CSH210

Abstract: CSH210R
Contextual Info: CSH210R • TX-RX and diversity switch for mobile communications • GaAs PHEMT Technology • Low Insertion Loss • No Supply Voltage Needed • Positive Control Voltage • SOT363 Package 2mm x 2mm ESD: Electrostatic discharge sensitive device Observe handling Precautions!

Contextual Info: BGA2818 MMIC wideband amplifier Rev. 4 — 9 December 2014 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package.

Contextual Info: BGA2818 MMIC wideband amplifier Rev. 3 — 19 August 2013 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package.

ecg006f

Abstract: an 17832
Contextual Info: ECG006F InGaP HBT Gain Block Product Features •        DC – 4.5 GHz 15 dB Gain @ 1 GHz +15.5 dBm P1dB @ 1 GHz +32 dBm OIP3 @ 1 GHz 3.7 dB Noise Figure Internally matched to 50  Robust 1000V ESD, Class 1C Lead-free/RoHS-compliant, SOT363 Package

ECG006F

Abstract: ECG006 ECG006F-G ECG006F-PCB JESD22-A114 an 17832 resistor 2491 marking ECG006-F
Contextual Info: ECG006F InGaP HBT Gain Block Product Features DC – 4.5 GHz 15 dB Gain @ 1 GHz +15.5 dBm P1dB @ 1 GHz +32 dBm OIP3 @ 1 GHz 3.7 dB Noise Figure Internally matched to 50 Robust 1000V ESD, Class 1C Lead-free/RoHS-compliant, SOT363 Package Product Description

mga-83563-tr1g

Abstract: 2.4 GHz driver amplifier A004R MGA-83563 MGA-83563-BLK MGA-83563-TR1 MGA83563-BLKG 63 marking, SOT 363
Contextual Info: Products > RF ICs/Discretes > RF ICs > GaAs Amplifiers, Mixers, Switches > MGA-83563 MGA-83563 3V PA/Driver, 22dBm PSAT, 0.5-6GHz, SOT363 SC-70 Description Lifecycle status: Active Features The MGA-83 is a 3V part with 20dBm P1dB. It is housed in the miniature SOT-363 package

marking 2h sot363

Contextual Info: BGA2870 MMIC wideband amplifier Rev. 1 — 24 February 2011 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package.

BGA2866

Abstract: MMIC marking 81 smd marking f2
Contextual Info: BGA2866 MMIC wideband amplifier Rev. 2 — 1 November 2010 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package.

Contextual Info: BGA2866 MMIC wideband amplifier Rev. 1 — 17 August 2010 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package.

74LVC2G06DW-7

Contextual Info: 74LVC2G06 DUAL INVERTER WITH OPEN DRAIN OUTPUTS Description Pin Assignments The 74LVC2G06 is a dual inverter gate with open drain outputs. The device is designed for operation with a power SOT26 SOT363 are Future Products supply range of 1.65V to 5.5V. The input is tolerant to 5.5V

EMM5329ZW

Abstract: V23133 marking code V3.V
Contextual Info: EMM5329ZW Single Pole Double Throw Switch 0.1 - 6 GHz Wireless LAN Transmit / Receive Applications FEATURES • • • • High Input P0.1dB: 33dBm Low Insertion Loss: 0.55 dB at 6 GHz GaAs PHEMT technology Small size and low-cost SC-70 / SOT363 package APPLICATIONS

Contextual Info: 74LVC2G17 DUAL SCHMITT TRIGGER BUFFER Description Pin Assignments The 74LVC2G17 is a dual Schmitt trigger buffer gate with standard push-pull outputs. The device is designed for operation with a power supply range of 1.65V to 5.5V. The SOT26 SOT363 are Future

amplifier SMD MARKING CODE 211

Abstract: MMIC marking code SC marking 52 sot363 SMD INDUCTOR 100 marking code C3 SMD Transistor BGM1014 MLG1608 mmic amplifier marking code 77 philips mmic rf mmic marking code 09 SOT363
Contextual Info: BGM1014 MMIC wideband amplifier Rev. 01 — 11 March 2005 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package.

DIODE BZG 03c

Abstract: DIODE BZX 85c marking code vishay label 1N4148 do214ac KZE sot23 Vishay diodes code marking 1N47A 1N5 diode 1N52B DIODE BZG
Contextual Info: Vishay Semiconductors Marking on Diodes V ÏÌÏ view from top Cathodering ÑÑ ÑÑÓ unwind ÌÌ ÌÌÏ Ï view from top Ó BZX ÑÑ Ó Cathodering V 414 8 BZX 55C 4V7 DO35 Type: 1N4148 ÏÌÏ view from top Cathodering Ó BAV ÑÑ ÑÑÓ unwind DO35 Type: BZX55C.

DCX114YU

Abstract: dcx124eu DCX (xxxx) K
Contextual Info: DCX xxxx U SMALL SIGNAL COMPLEMENTARY PRE-BIASED DUAL TRANSISTOR Features Mechanical Data • Epitaxial Planar Die Construction  Case: SOT363  Built-In Biasing Resistors    Case Material: Molded Plastic, “Green” Molding Compound UL Flammability Classification Rating 94V-0

3bs02

Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J
Contextual Info: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Selection Guide www.infineon.com/powermanagement Introduction I n f i n e o n ’ s P o w e r S e mi c o n d u c t o r p h i l o s o p h y is rather

transistor marking c y um-1

Abstract: BFM520 Philips FA 145 C2317 transistor S33 transistor xn NPN power transistor spice transistor bf 175
Contextual Info: Product specification Philips Semiconductors Dual NPN wideband transistor BFM520 PINNING - SOT363A FEATURES • Small size PIN SYMBOL • Temperature and hFE matched DESCRIPTION 1 bi base 1 • Low noise and high gain 2 01 emitter 1 • High gain at low current and low capacitance at low

m02 marking transistor

Abstract: m02 marking gain equivalent of SL 100 NPN Transistor marking b4c BFM505 MAM210 bi 370 transistor dual TMA 900 TMA 900 3064 6pin
Contextual Info: Philips Semiconductors Product specification Dual NPN wideband transistor BFM505 PINNING - SOT363A FEATURES • Small size PIN SYMBOL DESCRIPTION • Temperature and hpE matched 1 bi base 1 • Low noise and high gain 2 01 emitter 1 • High gain at low current and low capacitance at low

sot363a

Abstract: 3064 6pin BFM505 semiconductors bi 370 MAM210 NPN power transistor spice marking aded bi 370 transistor
Contextual Info: Philips Semiconductors Product specification Dual NPN wideband transistor BFM505 PINNING - SOT363A FEATURES • Sm all size PIN SYMBOL • Temperature and hpE matched 1 bi base 1 • Low noise and high gain 2 01 emitter 1 • High gain at low current and low capacitance at low