MARKING 34 DIODE SCHOTTKY Search Results

RB721Q-40

Abstract: RB721Q
Contextual Info: RB721Q-40 Diode, Schottky barrier, leaded These glass mold-type diodes are suitable for lead mounting on printed circuit boards. Dimensions Units : mm CATHODE. é Features _ f • available in DO-34 package - - c • part marking, see following table

Contextual Info: S EM ICOND UCTOR 500 mW Surface Mount LL-34 Hermetically Sealed Glass Small Signal Schottky Diode SURFACE MOUNT LL34 Absolute Maximum Ratings Symbol VRRM IF IFSM TSTG /TJ TA = 25°C unless otherwise noted DEVICE MARKING DIAGRAM Value Parameter Units LL60

do213AC

Abstract: MELF DIODE color bands melf diode marking MINI-MELF DIODE BLACK CATHODE MINI-MELF DIODE marking 3 DO-213AC LL60P MELF Package Schottky MELF Package DB148
Contextual Info: SEM IC O N DU C TO R 500 mW Surface Mount LL-34 Hermetically Sealed Glass Small Signal Schottky Diode SURFACE MOUNT LL34 Absolute Maximum Ratings Symbol VRRM IF IFSM TSTG /TJ TA = 25°C unless otherwise noted DEVICE MARKING DIAGRAM Value Parameter Units

RB441Q

Contextual Info: Diode, Schottky barrier, leaded RB441Q-40 Dimensions Units : mm These glass mold-type diodes are suitable for lead mounting on printed circuit boards. CATHODE BAND ¿ 0 .4 ± 0 . Features • ) available in DO-34 package » A c • part marking, see following table

DIODE MARKING CODE A1

Abstract: RFID 5.8Ghz HSMS286F marking code e1 DIODE 286E HSMS-286F HSMS-286K package marking AVAGO DATE CODE MARKING sc70-3 PCB PAD
Contextual Info: Products > RF ICs/Discretes > Schottky Diodes > Surface Mount > HSMS-286F HSMS-286F High frequency detector diode Description Lifecycle status: Active Features The HSMS-286F family of biased detector diodes have been designed and optimised for use from 915MHz to 5.8GHz. They are ideal for RF/ID and RF tag applications as well as large

surface mount limiter diodes

Abstract: marking 34 sot-363 rf HSMS-286F HSMS-286K HSMS-286P 286E HSMS-286B date code A DIODE MARKING CODE T4 marking code tc sot 363 MARKING T2 SOT323
Contextual Info: Products > RF ICs/Discretes > Schottky Diodes > Surface Mount > HSMS-286P HSMS-286P High frequency detector diode Description Lifecycle status: Active Features The HSMS-286F family of biased detector diodes have been designed and optimised for use from 915MHz to 5.8GHz. They are ideal for RF/ID and RF tag applications as well as large

marking 34 sot-363 rf

Abstract: HSMS-286x Series Detector Schottky Diodes at 915MHZ sot-23 MARKING CODE ZZ AVAGO DATE CODE MARKING sot 23 marking code T2 SOT 363 marking CODE T4 T4 marking sot-323 286E HSMS-2865
Contextual Info: Products > RF ICs/Discretes > Schottky Diodes > Surface Mount > HSMS-2865 HSMS-2865 High frequency detector diode Description Lifecycle status: Active Features The HSMS-286F family of biased detector diodes have been designed and optimised for use from 915MHz to 5.8GHz. They are ideal for RF/ID and RF tag applications as well as large

smd schottky diode 82

Abstract: smd diode S7 smd diode schottky code marking 63 1PS76SB17 sod323 diode marking code 74 6F SMD DIODE SMD CODE MARKING s7 marking 5BX smd diode schottky code marking 29 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D049 1PS76SB17 Schottky barrier diode Preliminary specification Supersedes data of 1996 Oct 14 1999 May 25 Philips Semiconductors Preliminary specification Schottky barrier diode 1PS76SB17 FEATURES DESCRIPTION

smd schottky diode marking 72

Abstract: st smd diode marking code
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 1PS79SB40 Schottky barrier diode Product specification Supersedes data of 1999 Mar 08 1999 Apr 26 Philips Semiconductors Product specification Schottky barrier diode 1PS79SB40
 FEATURES DESCRIPTION • Low forward voltage

Contextual Info: BAT165. Silicon Schottky Diode • Medium current Schottky rectifier diode • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Miniature plastic package for surface mounting SMD BAT165  ESD: Electrostatic discharge sensitive device, observe handling precaution!

LT 1000-T1

Abstract: marking 34 diode SCHOTTKY MOSFET TSSOP-8 Si6923DQ
Contextual Info: Si6923DQ P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It is combined with a low forward drop Schottky diode which is isolated from the

1PS76SB21

Abstract: "MARKING CODE S1" smd schottky diode marking 72 sod323 diode marking code 74
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET age M3D049 1PS76SB21 Schottky barrier diode Product specification Supersedes data of 1998 Jul 16 1999 May 05 Philips Semiconductors Product specification Schottky barrier diode 1PS76SB21 FEATURES DESCRIPTION • Ultra fast switching speed

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 1PS79SB10 Schottky barrier diode Product specification 1998 Jul 16 Philips Semiconductors Product specification Schottky barrier diode 1PS79SB10 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SC-79 ultra small plastic SMD

smd schottky diode marking 72

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D049 1PS76SB70 Schottky barrier diode Product specification 1998 Jul 16 Philips Semiconductors Product specification Schottky barrier diode 1PS76SB70 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD323 very small plastic

smd schottky diode marking s4

Abstract: smd schottky diode s4 33 smd schottky diode s4 48 S4 DIODE schottky smd schottky diode s4 S4 69 DIODE schottky S4 44 DIODE schottky "MARKING CODE S4" smd schottky diode marking 72 smd schottky diode s4 21
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D049 1PS76SB40 Schottky barrier diode Product specification Supersedes data of 1998 Jul 16 1999 Apr 26 Philips Semiconductors Product specification Schottky barrier diode 1PS76SB40 FEATURES DESCRIPTION • Low forward voltage

Schottky Diodes L43 SMD

Abstract: TBAT54A smd 662 transistor L43 SMD BAT54A BAT54C SMD l43 MARKING 8805 smd diode L43
Contextual Info: TBAT54A, TBAT54C Series Low Power Schottky Diodes Features: • Very low turn-on voltage and ultra-fast switching diodes, suitable for UHF detectors and other high frequency switching circuits. • Supplied on 8mm tape. SOT-23 Formed SMD Package BAT54A Package Outline Details

marking AF

Abstract: BAR63-03W BAT165
Contextual Info: BAT165. Medium Power AF Schottky Diode • Forward current: 750 mA Reverse voltage: 40 V • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Pb-free RoHS compliant package 1) • Qualified according AEC Q101

Contextual Info: BAT165. Medium Power AF Schottky Diode • Forward current: 750 mA Reverse voltage: 40 V • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Pb-free RoHS compliant package 1) • Qualified according AEC Q101

marking AF

Abstract: BAR63-03W BAT165
Contextual Info: BAT165. Medium Power AF Schottky Diode • Forward current: 750 mA Reverse voltage: 40 V • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications BAT165 1 2 ESD Electrostatic discharge sensitive device, observe handling precaution!

MBK573

Abstract: AT120A BAT120 BAT120A BAT120C BAT120S
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D087 BAT120 series Schottky barrier double diodes Product specification File under Discrete Semiconductors, SC01 1998 Jan 21 Philips Semiconductors Product specification Schottky barrier double diodes BAT120 series

smd schottky diode 82

Abstract: BAS40 BAS40-04W BAS40-05W BAS40-06W BAS40W
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D102 BAS40W series Schottky barrier double diodes Product specification Supersedes data of 1997 Oct 28 1999 Apr 26 Philips Semiconductors Product specification Schottky barrier (double) diodes BAS40W series

smd schottky diode 82

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D102 1PS70SB40 series Schottky barrier double diodes Product specification Supersedes data of 1997 Oct 28 1999 Apr 26 Philips Semiconductors Product specification Schottky barrier (double) diodes 1PS70SB40 series

Contextual Info: FDW6923 P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It is combined with a low forward drop Schottky diode which is isolated from the

FDW6923

Contextual Info: FDW6923 P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It is combined with a low forward drop Schottky diode which is isolated from the