MARKING 350 IC Search Results

Contextual Info: SMD High Voltage Transistors Part No. MMBT5550 MMBT5551 MMBTA42 MMBT6517 MMBT5400 MMBT5401 MMBTA92 MMBT6520 20080612 Device VCEO Marking Polarity Code V 1F 140 G1 160 NPN 1D 300 1Z 350 K2 120 2L 150 PNP 2D 300 2Z 350 hFE @ VCE & IC IC (A) 0.6 0.6 0.5 0.5

Contextual Info: SMD High Voltage Transistors Part No. MMBT5550 MMBT5551 MMBTA42 MMBT6517 MMBT5400 MMBT5401 MMBTA92 MMBT6520 20070515 Device VCEO Marking Polarity Code V 1F 140 G1 160 NPN 1D 300 1Z 350 K2 120 2L 150 PNP 2D 300 2Z 350 hFE @ VCE & IC IC (A) 0.6 0.6 0.5 0.5

1df transistor

Abstract: FJV42
Contextual Info: FJV42 NPN High Voltage Transistor 3 2 1 SOT-23 Marking: 1DF 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 350 V VCEO Collector-Emitter Voltage 350 V VEBO

Contextual Info: FJV42 NPN High Voltage Transistor 3 2 1 SOT-23 Marking: 1DF 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 350 V VCEO Collector-Emitter Voltage 350 V VEBO

transistor mje 350

Abstract: transistor mje mje 350 mje 340
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer PNP PLASTIC MEDIUM POWER SILICON TRANSISTOR MJE 350 CEN TO126 MARKING: CEN 350 Designed For Use Line - Operated Applications Such As Low

Contextual Info: UTC MMBTA14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA14 is a Darlington transistor. 2 FEATURES 1 *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 350 mW 3 MARKING 1N SOT-23 1: EMITTER 2: BASE

MMBTA13

Contextual Info: UTC MMBTA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA13 is a Darlington transistor. 2 FEATURES 1 *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 350 mW 3 MARKING 1M SOT-23 1: EMITTER 2: BASE

MMBTA13

Contextual Info: UTC MMBTA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA13 is a Darlington transistor. 2 FEATURES 1 *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 350 mW 3 MARKING 1M SOT-23 1: EMITTER 2: BASE

Contextual Info: UTC MMBTA14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA14 is a Darlington transistor. 2 FEATURES 1 *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 350 mW 3 MARKING 1N SOT-23 1: EMITTER 2: BASE

fv1043

Abstract: FV-1043 marking code diode DU marking code db3 100MHZ DO35 RS-296-D IC marking code D3 DB3-TR
Contextual Info: TAK CHEONG 350 mW DO-35 Hermetically Sealed Glass AFC / Trigger Diodes Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter PD Power Dissipation TSTG Storage Temperature Range TJ AXIAL LEAD DO35 Operating Junction Temperature DEVICE MARKING DIAGRAM

BZXB4C12

Abstract: B2X84C3V3 B2X84C3V9 b2x84c3 Y10-Y11
Contextual Info: iiA icr SURFACE MOUNT ZENERS 350 mW ZENER DIODES/TO-236 Marking OPERATING/STORAGE TEMPERATURE -55°C to +150°C Zener : i Voltage : Range V z @ t^T Typical Temperature Coefficient at lz=5m A Maximum Zener Impedance Zzr @ IZT V / Volts’ Ohms : ZZK 'ZK

KEP32

Abstract: HEP32 HP32 MC100EP32 MC10EP32
Contextual Info: MC10EP32, MC100EP32 3.3V / 5V ECL B2 Divider Description Features • 350 ps Typical Propagation Delay • Maximum Frequency > 4 GHz Typical Figure 3 • PECL Mode Operating Range: • http://onsemi.com MARKING DIAGRAMS* 8 8 1 SOIC−8 D SUFFIX CASE 751

Contextual Info: M T4C4003J lEG X 4 DRAM M IC R O N 1 MEG DRAM X 4 DRAM DRAM STATIC COLUMN FEATURES PIN ASSIGNMENT (Top View OPTIONS 20-Pin ZIP (DC-1) (DB-2) DQ1 DQ2 WE RAS A9 MARKING • Timing 70ns access 80ns access • Packages Plastic SOJ (300 mil) Plastic ZIP (350 mil)

KEP32

Abstract: HEP32 HP32 MC100EP32 MC10EP32
Contextual Info: MC10EP32, MC100EP32 3.3V / 5V ECL B2 Divider Description • 350 ps Typical Propagation Delay • Maximum Frequency > 4 GHz Typical Figure 3 • PECL Mode Operating Range: • MARKING DIAGRAMS* 8 8 1 SOIC−8 D SUFFIX CASE 751 1 8 8 1 VCC = 3.0 V to 5.5 V with VEE = 0 V

IC 4093 pin configuration

Abstract: BRY 56 B IC 4093 MARKING 30 5Y SO2894 4392 4392 a ic BCV27 BFR30 BFR31
Contextual Info: micropackaged devices m icroboitiers ^ général purpose and switching transistor selector guide THOMSON-CSF guide de sélection-transistors de com m utation et usage général Case TO'236 •c 0,5 . 0,8A 0,1 . 0,2A Type NPN PNP NPN PNP BCX 20 BCX 18 SO 2221

cfy 14 siemens

Abstract: CFY 18 CFY 10 cfy siemens CFY12 CFY10 CFY 18-23
Contextual Info: SIEMENS AKTIENGESELLSCHAF QBE D • fl23SbDS QOlSb?*} T H S I E G 7~“3/-^5' GaAs FETs Gallium Arsenide Field-Effect Transistors Metal Ceram ic Packages Type Max. ratings V ds V 5 CFY 10 5 CFY 11 CFY 12 5 0 CFY 19-18 6 □ CFY 19-22 6 □ CFY 19-27 6 CFY 18-12 5

EC marking NPN

Contextual Info: Central CMUT5087E PNP CMUT5088E NPN semiconductor Corp. EN H AN CED S P EC IFIC A T IO N SURFACE MOUNT ULTRAmini COMPLEMENTARY SILICON TRANSISTORS <E> ENHANCED S P E C IF IC A T IO N DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUT5087E, and CMUT5088E, are Silicon tran­

2.8V Fixed Positive LDO Regulator

Abstract: S8-A marking marking N4 marking L8C VS Semiconductor marking
Contextual Info: Data Sheet DUAL 300mA LDO REGULATORS AP2402 General Description Features The AP2402 series are dual positive voltage regulator ICs fabricated by CMOS process. Each of these ICs consists of a voltage reference, two error amplifiers, two resistor networks for setting output voltages. Each

Contextual Info: Data Sheet DUAL 300mA LDO REGULATORS AP2402 General Description Features The AP2402 series are dual positive voltage regulator ICs fabricated by CMOS process. Each of these ICs consists of a voltage reference, two error amplifiers, two resistor networks for setting output voltages. Each

sot-23 MARKING CODE SP

Abstract: Marking Code .25c sot23 DIODE Sp marking code marking code r1 sot23 Marking Code 25c sot23 MARKING CODE 190 device marking code A1 marking F1 SOT23 marking CM sot23 fr marking code sot23
Contextual Info: Central" CMPSH-3E CMPSH-3AE CMPSH-3CE CMPSH-3SE semiconductor Corp. ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES DESCRIPTION: The CENTRAL SEM ICONDUCTOR CMPSH-3E Series types are Enhanced Versions of the CMPSH-3 Series of Silicon Schottky Diodes in an

Contextual Info: Preliminary Datasheet DUAL 300mA LDO REGULATORS AP2402 General Description Features The AP2402 series are dual positive voltage regulator ICs fabricated by CMOS process. Each of these ICs consists of a voltage reference, two error amplifiers, two resistor networks for setting output voltages. Each

25CC

Abstract: 2N5086 2N5401 MMBT5086 MMBT5087 MMBT5088 MMBT5089 MMBT5401 MPSA18 MMBT6517
Contextual Info: DF|t.3b7ES4 0DÔED47 3 | ~ M O T O R O L A SC Í X S T R S / R FD- r 6367254 MOTOROLA SC XSTRS/R > M A X IM U M RATINGS 96D F * Rating Value v CEO 50 Vdc Collector-Base Voltage VcBO 50 Vdc Emitter-Base Voltage Veb O 3.0 Vdc ic 50 mAdc Symbol Max Unit Pd

SOT-23 CEB

Abstract: marking code PLI D 795 marking code LG
Contextual Info: Central" CMPT6517 NPN CMPT6520 PNP Semiconductor Corp. COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS DESCRIPTION: The CENTRAL SEM ICONDUCTOR CMPT6517, CMPT6520 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount pack­

marking code EE

Contextual Info: Central“ CMPSH-3 CMPSH-3A CMPSH-3C CMPSH-3S Sem iconductor Corp. SCHOTTKY DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPSH-3 Series types are Silicon Schottky diodes designed for surface mount fast switching applications requiring a low forward voltage drop.