Untitled
Abstract: No abstract text available
Text: SMD High Voltage Transistors Part No. MMBT5550 MMBT5551 MMBTA42 MMBT6517 MMBT5400 MMBT5401 MMBTA92 MMBT6520 20080612 Device VCEO Marking Polarity Code V 1F 140 G1 160 NPN 1D 300 1Z 350 K2 120 2L 150 PNP 2D 300 2Z 350 hFE @ VCE & IC IC (A) 0.6 0.6 0.5 0.5
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MMBT5550
MMBT5551
MMBTA42
MMBT6517
MMBT5400
MMBT5401
MMBTA92
MMBT6520
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Untitled
Abstract: No abstract text available
Text: SMD High Voltage Transistors Part No. MMBT5550 MMBT5551 MMBTA42 MMBT6517 MMBT5400 MMBT5401 MMBTA92 MMBT6520 20070515 Device VCEO Marking Polarity Code V 1F 140 G1 160 NPN 1D 300 1Z 350 K2 120 2L 150 PNP 2D 300 2Z 350 hFE @ VCE & IC IC (A) 0.6 0.6 0.5 0.5
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MMBT5550
MMBT5551
MMBTA42
MMBT6517
MMBT5400
MMBT5401
MMBTA92
MMBT6520
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PDF
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1df transistor
Abstract: FJV42
Text: FJV42 NPN High Voltage Transistor 3 2 1 SOT-23 Marking: 1DF 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 350 V VCEO Collector-Emitter Voltage 350 V VEBO
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FJV42
OT-23
FJV42
1df transistor
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Untitled
Abstract: No abstract text available
Text: FJV42 NPN High Voltage Transistor 3 2 1 SOT-23 Marking: 1DF 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 350 V VCEO Collector-Emitter Voltage 350 V VEBO
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FJV42
OT-23
FJV42
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transistor mje 350
Abstract: transistor mje mje 350 mje 340
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer PNP PLASTIC MEDIUM POWER SILICON TRANSISTOR MJE 350 CEN TO126 MARKING: CEN 350 Designed For Use Line - Operated Applications Such As Low
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C-120
transistor mje 350
transistor mje
mje 350
mje 340
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Untitled
Abstract: No abstract text available
Text: UTC MMBTA14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA14 is a Darlington transistor. 2 FEATURES 1 *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 350 mW 3 MARKING 1N SOT-23 1: EMITTER 2: BASE
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MMBTA14
MMBTA14
OT-23
CHARACTERISTIC50
100mA
100mA
100MHz
QW-R206-038
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PDF
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MMBTA13
Abstract: No abstract text available
Text: UTC MMBTA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA13 is a Darlington transistor. 2 FEATURES 1 *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 350 mW 3 MARKING 1M SOT-23 1: EMITTER 2: BASE
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MMBTA13
MMBTA13
OT-23
QW-R206-006
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PDF
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MMBTA13
Abstract: No abstract text available
Text: UTC MMBTA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA13 is a Darlington transistor. 2 FEATURES 1 *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 350 mW 3 MARKING 1M SOT-23 1: EMITTER 2: BASE
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MMBTA13
MMBTA13
OT-23
100ms
QW-R206-006
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PDF
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Untitled
Abstract: No abstract text available
Text: UTC MMBTA14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA14 is a Darlington transistor. 2 FEATURES 1 *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 350 mW 3 MARKING 1N SOT-23 1: EMITTER 2: BASE
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MMBTA14
MMBTA14
OT-23
QW-R206-038
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PDF
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fv1043
Abstract: FV-1043 marking code diode DU marking code db3 100MHZ DO35 RS-296-D IC marking code D3 DB3-TR
Text: TAK CHEONG 350 mW DO-35 Hermetically Sealed Glass AFC / Trigger Diodes Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter PD Power Dissipation TSTG Storage Temperature Range TJ AXIAL LEAD DO35 Operating Junction Temperature DEVICE MARKING DIAGRAM
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DO-35
FV1043
DO-35
250mm
fv1043
FV-1043
marking code diode DU
marking code db3
100MHZ
DO35
RS-296-D
IC marking code D3
DB3-TR
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PDF
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KEP32
Abstract: HEP32 HP32 MC100EP32 MC10EP32
Text: MC10EP32, MC100EP32 3.3V / 5V ECL B2 Divider Description Features • 350 ps Typical Propagation Delay • Maximum Frequency > 4 GHz Typical Figure 3 • PECL Mode Operating Range: • http://onsemi.com MARKING DIAGRAMS* 8 8 1 SOIC−8 D SUFFIX CASE 751
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MC10EP32,
MC100EP32
KEP32
HEP32
506AA
MC100
MC10EP32/D
KEP32
HEP32
HP32
MC100EP32
MC10EP32
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PDF
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KEP32
Abstract: HEP32 HP32 MC100EP32 MC10EP32
Text: MC10EP32, MC100EP32 3.3V / 5V ECL B2 Divider Description • 350 ps Typical Propagation Delay • Maximum Frequency > 4 GHz Typical Figure 3 • PECL Mode Operating Range: • MARKING DIAGRAMS* 8 8 1 SOIC−8 D SUFFIX CASE 751 1 8 8 1 VCC = 3.0 V to 5.5 V with VEE = 0 V
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MC10EP32,
MC100EP32
KEP32
HEP32
506AA
MC100
MC10EP32/D
KEP32
HEP32
HP32
MC100EP32
MC10EP32
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PDF
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KEP32
Abstract: MC100EP32DTG HEP32 HP32 MC100EP32 MC10EP32
Text: MC10EP32, MC100EP32 3.3V / 5V ECL B2 Divider Description • 350 ps Typical Propagation Delay • Maximum Frequency > 4 GHz Typical Figure 3 • PECL Mode Operating Range: • MARKING DIAGRAMS* 8 8 1 SOIC−8 D SUFFIX CASE 751 1 8 8 1 VCC = 3.0 V to 5.5 V with VEE = 0 V
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MC10EP32,
MC100EP32
KEP32
HEP32
506AA
MC100
MC10EP32/D
KEP32
MC100EP32DTG
HEP32
HP32
MC100EP32
MC10EP32
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PDF
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2.8V Fixed Positive LDO Regulator
Abstract: S8-A marking marking N4 marking L8C VS Semiconductor marking
Text: Data Sheet DUAL 300mA LDO REGULATORS AP2402 General Description Features The AP2402 series are dual positive voltage regulator ICs fabricated by CMOS process. Each of these ICs consists of a voltage reference, two error amplifiers, two resistor networks for setting output voltages. Each
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300mA
AP2402
2.8V Fixed Positive LDO Regulator
S8-A marking
marking N4
marking L8C
VS Semiconductor marking
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet DUAL 300mA LDO REGULATORS AP2402 General Description Features The AP2402 series are dual positive voltage regulator ICs fabricated by CMOS process. Each of these ICs consists of a voltage reference, two error amplifiers, two resistor networks for setting output voltages. Each
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300mA
AP2402
AP2402
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BZXB4C12
Abstract: B2X84C3V3 B2X84C3V9 b2x84c3 Y10-Y11
Text: iiA icr SURFACE MOUNT ZENERS 350 mW ZENER DIODES/TO-236 Marking OPERATING/STORAGE TEMPERATURE -55°C to +150°C Zener : i Voltage : Range V z @ t^T Typical Temperature Coefficient at lz=5m A Maximum Zener Impedance Zzr @ IZT V / Volts’ Ohms : ZZK 'ZK
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OCR Scan
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DIODES/TO-236
BZX84C3
B2X84C3V3
BZX84C3V6
B2X84C3V9
BZX84C4V3
BZX84C4V7
BZX84C5V1
BZX84C5V6
3ZX84C6V2
BZXB4C12
b2x84c3
Y10-Y11
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PDF
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Untitled
Abstract: No abstract text available
Text: M T4C4003J lEG X 4 DRAM M IC R O N 1 MEG DRAM X 4 DRAM DRAM STATIC COLUMN FEATURES PIN ASSIGNMENT (Top View OPTIONS 20-Pin ZIP (DC-1) (DB-2) DQ1 DQ2 WE RAS A9 MARKING • Timing 70ns access 80ns access • Packages Plastic SOJ (300 mil) Plastic ZIP (350 mil)
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OCR Scan
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T4C4003J
024-cycle
20/26-Pin
20-Pin
MT4C4003J
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PDF
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IC 4093 pin configuration
Abstract: BRY 56 B IC 4093 MARKING 30 5Y SO2894 4392 4392 a ic BCV27 BFR30 BFR31
Text: micropackaged devices m icroboitiers ^ général purpose and switching transistor selector guide THOMSON-CSF guide de sélection-transistors de com m utation et usage général Case TO'236 •c 0,5 . 0,8A 0,1 . 0,2A Type NPN PNP NPN PNP BCX 20 BCX 18 SO 2221
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OCR Scan
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O-236
IC 4093 pin configuration
BRY 56 B
IC 4093
MARKING 30 5Y
SO2894
4392
4392 a ic
BCV27
BFR30
BFR31
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PDF
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cfy 14 siemens
Abstract: CFY 18 CFY 10 cfy siemens CFY12 CFY10 CFY 18-23
Text: SIEMENS AKTIENGESELLSCHAF QBE D • fl23SbDS QOlSb?*} T H S I E G 7~“3/-^5' GaAs FETs Gallium Arsenide Field-Effect Transistors Metal Ceram ic Packages Type Max. ratings V ds V 5 CFY 10 5 CFY 11 CFY 12 5 0 CFY 19-18 6 □ CFY 19-22 6 □ CFY 19-27 6 CFY 18-12 5
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OCR Scan
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fl23SbDS
cfy 14 siemens
CFY 18
CFY 10
cfy siemens
CFY12
CFY10
CFY 18-23
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PDF
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EC marking NPN
Abstract: No abstract text available
Text: Central CMUT5087E PNP CMUT5088E NPN semiconductor Corp. EN H AN CED S P EC IFIC A T IO N SURFACE MOUNT ULTRAmini COMPLEMENTARY SILICON TRANSISTORS <E> ENHANCED S P E C IF IC A T IO N DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUT5087E, and CMUT5088E, are Silicon tran
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OCR Scan
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CMUT5087E
CMUT5088E
CMUT5087E,
CMUT5088E,
OT-523
CP188/CP588,
12-February
EC marking NPN
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PDF
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sot-23 MARKING CODE SP
Abstract: Marking Code .25c sot23 DIODE Sp marking code marking code r1 sot23 Marking Code 25c sot23 MARKING CODE 190 device marking code A1 marking F1 SOT23 marking CM sot23 fr marking code sot23
Text: Central" CMPSH-3E CMPSH-3AE CMPSH-3CE CMPSH-3SE semiconductor Corp. ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES DESCRIPTION: The CENTRAL SEM ICONDUCTOR CMPSH-3E Series types are Enhanced Versions of the CMPSH-3 Series of Silicon Schottky Diodes in an
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OCR Scan
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OT-23
CPD48,
13-November
OT-23
sot-23 MARKING CODE SP
Marking Code .25c sot23
DIODE Sp marking code
marking code r1 sot23
Marking Code 25c sot23
MARKING CODE 190
device marking code A1
marking F1 SOT23
marking CM sot23
fr marking code sot23
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PDF
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25CC
Abstract: 2N5086 2N5401 MMBT5086 MMBT5087 MMBT5088 MMBT5089 MMBT5401 MPSA18 MMBT6517
Text: DF|t.3b7ES4 0DÔED47 3 | ~ M O T O R O L A SC Í X S T R S / R FD- r 6367254 MOTOROLA SC XSTRS/R > M A X IM U M RATINGS 96D F * Rating Value v CEO 50 Vdc Collector-Base Voltage VcBO 50 Vdc Emitter-Base Voltage Veb O 3.0 Vdc ic 50 mAdc Symbol Max Unit Pd
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OCR Scan
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PDF
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SOT-23 CEB
Abstract: marking code PLI D 795 marking code LG
Text: Central" CMPT6517 NPN CMPT6520 PNP Semiconductor Corp. COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS DESCRIPTION: The CENTRAL SEM ICONDUCTOR CMPT6517, CMPT6520 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount pack
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OCR Scan
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CMPT6517
CMPT6520
CMPT6517,
OT-23
CMPT6517:
CMPT6520:
20MHz
CMPT6517)
CMPT6520)
SOT-23 CEB
marking code PLI
D 795
marking code LG
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PDF
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marking code EE
Abstract: No abstract text available
Text: Central“ CMPSH-3 CMPSH-3A CMPSH-3C CMPSH-3S Sem iconductor Corp. SCHOTTKY DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPSH-3 Series types are Silicon Schottky diodes designed for surface mount fast switching applications requiring a low forward voltage drop.
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OCR Scan
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OT-23
100mA
marking code EE
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PDF
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