MARKING 5A1 SOT23 Search Results

5B1 SOT23

Abstract: 5B1 SOT-23 sot23 marking 5c1 marking 5b1
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon ƽ Pb-Free Package is available. LBC807-16LT1 DEVICE MARKING AND ORDERING INFORMATION Device Marking LBC807-16LT1 LBC807-16LT1G 5A1 SOT-23 5B1 SOT-23 5B1 Pb-Free LBC807-40LT1 LBC807-40LT1G

5C1 SOT-23

Abstract: sot23 marking 5c1 LBC80725LT3G marking 5b1 5B1 sot23 marking 5a1 sot23 LBC807-40LT3G LBC807-25 LBC807-16LT1G LBC807-16LT3G
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. ƽGeneral purpose switching and amplification.

5B1 SOT-23

Abstract: LBC807-16LT1G LBC807-16LT3G LBC807-25LT1G LBC807-40LT1G LBC807-40LT3G sot23 marking 5c1 Transistors 5A1 J
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. ƽGeneral purpose switching and amplification.

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. ƽGeneral purpose switching and amplification.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BC807-16LT1 BC807-25LT1 BC807-40LT1 TRANSISTOR PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR W (Tamb=25℃) A -50 V 0. 95 0. 4 -0.5 0. 95 2. 4 1. 3 1. 9 Collector current

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. ƽGeneral purpose switching and amplification.

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. ƽGeneral purpose switching and amplification.

WOST05C

Abstract: 15KV WOST12C 5a1 DIODE
Contextual Info: WOST04C thru WOST15C Surface Mount TVS Diode Array for ESD Protection TRANSIENT VOLTAGE SUPPRESSORS 300 WATTS 4-15 VOLTS P b Lead Pb -Free Features: * Transient Protection for data lines as per IEC 61000-4-2(ESD)15KV(air), 8KV(contact) * 300 Watts Peak Power Protection. (tp=8/20µS)

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G S-LBC807-16LT1G S-LBC807-25LT1G S-LBC807-40LT1G PNP Silicon FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V.

LBC80725LT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G S-LBC807-16LT1G S-LBC807-25LT1G S-LBC807-40LT1G FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V.

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. ƽGeneral purpose switching and amplification.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 1. BASE 2. EMITTER １．０ 3. COLLECTOR W（Tamb=25℃） ２．４ １．３ V ０．９５ A ０．４ １．９ FEATURES Power dissipation PCM : 0.3 Collector current

Contextual Info: M C C SOT-23 P la stic-E n cap s u ia te T r a n s is to r s ^ ^ ^ B C 807-16/25/40L T 1 TR A N SIS TO R PNP m 1.BASE 2.EMITTER 3.COLLECTOR FEATURES ^ iM è r^ b s ip a tio n PcM: 0.3 W ( Tamb=25'C ) . ICM: filfcfa -0.5 A V(br)cbo:-50V storage junction temperature range

marking code 5b1

Abstract: 5C1 SOT-23 Willas Electronic 5B1 SOT 23 5B1 SOT-23 sot23 marking 5c1 marking 5a1
Contextual Info: WILLAS BC807-xxLT1 General Purpose Transistors PNP Silicon FEATURE Collector current capability IC = -500 mA. Collector-emitter voltage VCEO max = -45 V. General purpose switching and amplification. PNP complement: BC807 Series. SOT–23 We declare that the material of product compliance with RoHS requirements.

Contextual Info: : S v î^ S e m i ; SOT -23 Plastic Encapsulate Transistors 5YM5EMI SEMICONDUCTOR BC807 -16LT1 BC807 -25LT1 BC8 0 7 -40LT1 TRANSISTOR SOT — 23 1. BASE 2. EMI H E R 3. COLLECTOR FEATURES Power dissipation 0.3 Pcm Collector current 1 cm : PNP W -0 .5 (Tamb=25 °C)

BC807-40

Abstract: 5B1 SOT-23 BC807-16 BC807-25
Contextual Info: BC807-16/ BC807-25 BC807-40 General Purpose Transistor PNP Silicon COLLECTOR 3 MARKING DIAGRAM 3 1 BASE 1 2 SOT-23 2 EMITTER Maximum Ratings TA=25 C unless otherwise noted Symbol Value Collector-Emitter Voltage V CEO -45 Unit V Collector-Base Voltage VCBO

5c sot-23

Abstract: BC807-16 5B SOT23 marking 5a1 sot23 BC807-25 BC807-40 BC817 5C sot23 BC817 sot package sot-23 marking 5b sot-23
Contextual Info: BL Galaxy Electrical Production specification PNP General Purpose Amplifier FEATURES z Ideally suited for automatic insertion. z Complementary NPN type available BC807-16/-25/-40 Pb Lead-free BC817 z Epitaxial planar die construction. APPLICATIONS z This device is designed for general purpose amplifier

marking 5a1 sot23

Contextual Info: MCC BC807-16 BC807-25 BC807-40
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# Features • • • • PNP Silicon General Purpose Transistors Capable of 0.3Watts of Power Dissipation. Collector-current 0.5A

Contextual Info: MCC BC807-16 BC807-25 BC807-40
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • PNP Silicon General Purpose Transistors Capable of 0.3Watts of Power Dissipation. Collector-current 0.5A

BC807-40/5C

Contextual Info: MCC BC807-16 BC807-25 BC807-40
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • PNP Silicon General Purpose Transistors Capable of 0.3Watts of Power Dissipation. Collector-current 0.5A

BC807-40

Contextual Info: MCC TM Micro Commercial Components BC807-16 BC807-25 BC807-40
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • PNP Silicon General Purpose Transistors Capable of 0.3Watts of Power Dissipation.

Contextual Info: MCC TM Micro Commercial Components BC807-16 BC807-25 BC807-40
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • PNP Silicon General Purpose Transistors Capable of 0.3Watts of Power Dissipation.

BC807-40

Contextual Info: MCC TM Micro Commercial Components BC807-16 BC807-25 BC807-40
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • PNP Silicon General Purpose Transistors Capable of 0.3Watts of Power Dissipation.

Contextual Info: MCC TM Micro Commercial Components BC807-16 BC807-25 BC807-40
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • PNP Silicon General Purpose Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates