MARKING 62 ON SEMI Search Results

injector MOSFET driver

Abstract: 1n06 an569 Transient Thermal Resistance MLD1N06CL
Contextual Info: MLD1N06CL Preferred Device SMARTDISCRETESt MOSFET 1 Amp, 62 Volts, Logic Level N−Channel DPAK http://onsemi.com V BR DSS RDS(on) TYP ID MAX 62 V (Clamped) 750 mW 1.0 A R1 G R2 S MARKING DIAGRAM & PIN ASSIGNMENT MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

MLD1N06CL

Abstract: AN569 MLD1N06CLT4 fuel injector INJECTOR injector MOSFET driver 1N06C
Contextual Info: MLD1N06CL Preferred Device SMARTDISCRETESt MOSFET 1 Amp, 62 Volts, Logic Level N−Channel DPAK http://onsemi.com V BR DSS RDS(on) TYP ID MAX 62 V (Clamped) 750 mW 1.0 A R1 G R2 S MARKING DIAGRAM & PIN ASSIGNMENT MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

L2N06CL

Abstract: 06-CL injector MOSFET driver AN569 MLD2N06CL MLD2N06CLT4 injector driver fuel injector INJECTOR
Contextual Info: MLD2N06CL Preferred Device SMARTDISCRETESt MOSFET 2 Amp, 62 Volts, Logic Level N−Channel DPAK http://onsemi.com V BR DSS RDS(on) TYP ID MAX 62 V (Clamped) 400 mW 2.0 A R1 G R2 S MARKING DIAGRAM & PIN ASSIGNMENT MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

2SC5053

Contextual Info: 2SC5053 Transistor, NPN Features Dimensions Units : mm available in MPT3 (MPT, SC-62) package package marking: 2SC5053; CG-*, where ★ is hFE code PC = 2Wwhen mounted on a 40x 40 x 0.7 mm ceramic substrate 2SC5053 (MPT3) . 5 »02 2-a, 1.6 * 0.1 * =Ea_ TT

transistor bc 132

Abstract: B1188 BC transistor series
Contextual Info: 2SB1188 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62)package • package marking: 2SB1188; BC^, where ★ is hFE code 2SB1188 (MPT3) • collector power dissipation, P c = 2 W, when mounted on 40 x 40 x 0.7 mm

2SC5053

Contextual Info: 2SA1900 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SC-62) package • package marking: 2SA1900; ALA-, where ★ is hFE code • PC - 2 W (when mounted on a 40 x 40 x 0.7 mm ceramic substrate) • • 2SA1900 (MPT3) ♦0.2

Contextual Info: 2SB1132 Transistor, PNP Features Dimensions Units : mm • available In MPT3 (MPT, SC-62) package • package marking: 2SB1132; BA*-, where ★ is hFE code 2SB1132 (MPT3) • Pc = 2 W (when mounted on 40 x 40 x 0.7 mm ceramic PCB) • low collector saturation voltage,

2SD1664

Abstract: Marking TRANSISTOR 232
Contextual Info: 2SD1664 Transistor, NPN Features Dimensions U n its : mm • available in MPT3 (MPT, SC-62) package • package marking: 2SD1664; DA-*, where ★ is hFE code • PC = 2 W when mounted on a 40 x 40 x 0.7 mm ceramic substrate • low collector saturation voltage,

Contextual Info: 2SB1132 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SC-62) package • package marking: 2SB1132; B A *, where ★ is hFE code 2SB1132 (MPT3) . , +0.2 *•5—0.1 1.6±0.1 • Pc = 2 W (when mounted on 40 x 40 x 0.7 mm ceramic PCB)

TRANSISTOR BI 237

Abstract: NPN/TRANSISTOR BI 237
Contextual Info: 2SD1766 Transistor, NPN Features • available in MPT3 MPT, SOT-89, SC-62 package • package marking: 2SD1766; DB-fr, where * is hFE code • Pq = 2 W, when mounted on 40 x 40 x 0.7 mm ceramic substrate • low collector saturation voltage, typically, VCE(Sat)=0.16 V for

2SC5053

Abstract: bo78 2SC5053 NPN transistor bb3 marking code 43b marking CODE 43B transistor 2SA1900 T100 Transistor npn 43B MARKING
Contextual Info: 2SC5053 Transistor, NPN Features Dimensions Units : mm available in MPT3 (MPT, SC-62) package 2SC5053 (MPT3) package marking: 2SC5053; CGit, where ★ is hFE code ¿s'* 4 .5 _ o-2 .i 1.6*0.1 UÌ Pc = 2 W when mounted on a 40 x 40 x 0.7 mm ceramic substrate

marking code 62 3 pin diode

Contextual Info: BAT 62-08S Silicon Schottky Diode Array Preliminary data 4 • Low barrier diode for detectors up to GHz 5 6 frequencies Tape loading orientation Top View 654 Marking on SOT-363 package for example W1s corresponds to pin 1 of device C1 C2 C3 6 5 4 2 1 3

2SD1766

Contextual Info: 2SD1766 Transistor, NPN Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SD1766; DB-*, where ★ is hFg code • • • 2SD1766 (MPT3) +0 2 4 5 —0.1 1 .6 * 0 1 m Ö 1 %2 ¿L. R : H I 1 P q = 2 W, when mounted on 40 x 40 x

CSG3001-18A04

Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
Contextual Info: REPLACEMENT TABLE FOR THE POWER SEMICONDUCTORS OF SAMI STAR FREQUENCY CONVERTERS The replacement table gives a list of those semiconductors, which can be used in SAMI STAR frequency converters. The types given for each semiconductor are interchangeable. Detail information about the mounting of the power

Contextual Info: Centrar CUD10-02 CUD10-04 CUD10-06 Semiconductor Corp. SURFACE MOUNT ULTRA FAST RECOVERY SILICON RECTIFIER FEATURES: • HIGH RELIABILITY • LOW FORWARD VOLTAGE • HIGH CURRENT CAPABILITY • HIGH SURGE CAPACITY • UL FLAMMABILITY CLASSIFICATION 94V-0 • SUPERIOR LOTTO LOT CONSISTENCY

b2 diode

Abstract: marking 62 marking code b3
Contextual Info: CM6200 Advance Information EMI Filters with ESD Protection for Microphone Interface http://onsemi.com Description ON Semiconductor’s CM6200 is a 3x3, 8−bump EMI filter with ESD protection device for microphone interface applications in a CSP form factor, 0.4 mm pitch. The CM6200 is fully compliant with

SMD MARKING CODE TRANSISTOR 501

Abstract: TRANSISTOR SMD MARKING CODE 3d TRANSISTOR SMD MARKING CODE rd TRANSISTOR SMD MARKING CODE 501 TRANSISTOR SMD MARKING CODE SP MV smd marking code SOT23 marking code 33 SMD ic TRANSISTOR SMD CODE PACKAGE SOT23 501 SMD transistor MARKING CODE 213 SMD transistor MARKING CODE 43
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC856; BC857 PNP general purpose transistors Product specification Supersedes data of 1997 Apr 17 1999 Apr 12 Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857

Contextual Info: FQA62N25C N-Channel QFET MOSFET 250 V, 62 A, 35 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to

Contextual Info: FQA62N25C N-Channel QFET MOSFET 250 V, 62 A, 35 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to

mar 752

Abstract: TSOP RECEIVER smd marking 393 TSOP8 VISHAY MARKING CODE IR RECEIVERS smd semiconductors on marking heimdall ir TSOP312 TSOP313
Contextual Info: Markings Vishay Semiconductors Marking on IR Receiver Modules Company logo Datecode YWW Location All cast photomodules for example: TSOP11. TSOP12. TSOP13. TSOP311. TSOP312. TSOP313. TSOP314. V 19 223 TSOP 1238 Part no. 17078 Location All molded photomodules

diode cross reference 1n914

Abstract: 1n914 str 50113 sa marking axial diode philips 1n914a marking diode axial
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N914 High-speed diode Product specification Supersedes data of 1996 Sep 03 1999 May 26 Philips Semiconductors Product specification High-speed diode 1N914 FEATURES DESCRIPTION • Hermetically sealed leaded glass

diode sod* marking code 84

Abstract: marking JL sod123 CMHZ5229B cm5 marking CMHZ5265B
Contextual Info: Central CMHZ5221B THRU CMHZ5267B TM Semiconductor Corp. SURFACE MOUNT ZENER DIODE 2.4 VOLTS THRU 75 VOLTS 500mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHZ5221B Series Silicon Zener Diode is a high quality voltage regulator, manufactured in a surface

philips zener diode c24

Abstract: Zener diode smd marking code .18 C30 DIODE ZENER DIODE ZENER smd marking 72 Zener diode smd marking 22 iz c220 zener diode smd diode UM 35 DIODE smd marking code UM 31 philips zener diode c12 Zener diode smd marking code C24
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D168 BZG01 series SMA voltage regulator diodes Product specification Supersedes data of 2000 Feb 17 2003 Mar 06 Philips Semiconductors Product specification SMA voltage regulator diodes BZG01 series FEATURES

SC4075

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N914 High-speed diode Product specification Supersedes data of 1996 Sep 03 1999 May 26 Philips Semiconductors Product specification High-speed diode 1N914 FEATURES DESCRIPTION • Hermetically sealed leaded glass