MARKING 651 SOT223 Search Results

umax8

Abstract: uMAX10 CC2512 uMAX TFM 5199 MARKING 61525 CC2010 CC0805 QSOP150 SC70-6
Contextual Info: Ironwood Electronics, Inc. PO Box 21151 ¥ St. Paul, MN 55121 ¥ 651 452-8100 ¥ Fax (651) 452-8400 General Description of PN-analogSMT-01 The analog prototyping panel, PN-analogSMT-01, is organized with IC patterns and discrete SMT shapes interspersed. The list of patterns is shown on the following pages.

zt751

Abstract: 3055L 2955E 3055e SP19A zta96 2N02L marking 651 sot223
Contextual Info: SOT-223 DEVICES continued Plastic-Encapsulated High-Voltage Transistors Pinout: 1-Base, 2-Collector, 3-Emitter, 4-Collector h hFE Device Marking V (BR)CEO Min SP19A P1D BF720 SP20A 350 300 250 250 40 40 50 40 ZTA96 P2D BSP16 BF721 450 300 300 250 50 40 30

FZT851

Abstract: FZT851TA
Contextual Info: A Product Line of Diodes Incorporated Green FZT851 60V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 60V • • IC = 6A High Continuous Collector Current • Case Material: Molded Plastic. “Green” Molding Compound. •

Contextual Info: A Product Line of Diodes Incorporated Green FZT851 60V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 60V   IC = 6A High Continuous Collector Current  Case Material: Molded Plastic. “Green” Molding Compound. 

Contextual Info: A Product Line of Diodes Incorporated Green FZT1051A 40V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN SOT223 Features Mechanical Data •               BVCEO > 40V IC = 5A high Continuous Collector Current ICM = 20A Peak Pulse Current

Contextual Info: A Product Line of Diodes Incorporated Green FZT1048A 17.5V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 17.5V • • BVCES > 50V • • IC = 5A High Continuous Collector Current • ICM = 20A Peak Pulse Current

FZT651

Abstract: transistor fzt651 FZT marking code FZT651QTC fzt651tc FZT651TA
Contextual Info: A Product Line of Diodes Incorporated Green FZT651 60V NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • BVCEO > 60V Maximum continuous current IC cont = 3A Low Saturation Voltage

X5T851

Abstract: ZX5T951G marking X5T
Contextual Info: A Product Line of Diodes Incorporated Green ZX5T851G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > 60V IC = 6A high Continuous Collector Current ICM = 20A Peak Pulse Current

FZT853

Contextual Info: A Product Line of Diodes Incorporated Green FZT853 100V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 100V • • IC = 6A high Continuous Collector Current • Case Material: Molded Plastic. “Green” Molding Compound. •

Contextual Info: A Product Line of Diodes Incorporated Green FZT857 300V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data •      BVCEO > 300V IC = 3.5A High Continuous Collector Current ICM = 5A Peak Pulse Current Very Low Saturation Voltage VCE sat < 155mV @ 1A

Contextual Info: Central Semiconductor Corp. CZT2907A PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT2907A type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose amplifier and switching applications.

Contextual Info: A Product Line of Diodes Incorporated Green FZT651 60V NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • BVCEO > 60V Maximum continuous current IC = 3A Low Saturation Voltage

FZT857QTA

Abstract: Y1 marking MARKING fzt
Contextual Info: A Product Line of Diodes Incorporated Green FZT857 300V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 300V   IC = 3.5A High Continuous Collector Current  Case Material: Molded Plastic. “Green” Molding Compound.

marking 651 sot223

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Planar Epitaxial Transistor PZT651T1 Motorola Preferred Device This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT-223 package which is designed for

Contextual Info: BSP 50. BSP 52 NPN Silicon Darlington Transistors 32E D • ISIP 0231=320 Q017Q73 Q SIEMENS/ SPCL ■, SEMICONDS T '3 3 - 3 - 7 • High collector current • Low collector -emitter saturation voltage • Complementary types: BSP 60.BSP 62 PNP Type Marking

marking 651

Abstract: marking 651 sot223 PZT651T3
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Planar E pitaxial Transistor PZT651T1 Motorola Preferred Device This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT-223 package which is designed for

P2T65

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA P2T651T1 NPN Silicon Planar E pitaxial Transistor Motorola Preferred Device This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT-223 package which is

ic str wg 252

Abstract: HV9961 hv9931 HV9910B HV9910 str 6655 HV9919 pj 899 diode BIBRED STR 6656
Contextual Info: Supertex inc. Short Form Catalog 2009 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,

HV9961

Abstract: 2N7002 MARKING 1702 HV9963 HV9910 hv9910b SR087 str 6655 STR 6656 DN2450 HV509
Contextual Info: Supertex inc. Short Form Catalog 2011 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,

STR 6656

Abstract: HV509 str 6655 pj 899 diode HV9910 K 3264 fet transistor tray qfn 7x7 diode PJ 966 relay 4098 cell phone detector
Contextual Info: Supertex inc. Short Form Catalog 2009 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,

PZT651T1

Abstract: PZT651T1G PZT651T3 PZT751T1 BFr pnp transistor
Contextual Info: PZT651T1G NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.

Contextual Info: ON Semiconductort PZT651T1 NPN Silicon Planar Epitaxial Transistor ON Semiconductor Preferred Device This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT–223 package which is designed for medium power surface

MARKING 93 SOT-223

Abstract: sot-223 body marking D K Q F
Contextual Info: Order this data sheet MOTOROLA by PZT651T1/D SEMICONDUCTOR TECHNICAL DATA PZT651T1 NPN Silicon Planar Epitaxial TVansistor M o to ro la P referre d D e vic e This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT-223 package which is designed for

Contextual Info: b3b?254 Q101b32 TS7 • M O T b Order this data sheet by PZT651T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZT651T1 NPN Silicon Planar Epitaxial Transistor M o to ro la P referre d D evice This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer