MARKING 702 SOT363 Search Results

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G N–Channel SOT–23 3 • Pb−Free Package is Available. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ

micro-x marking code E1

Abstract: 0004E4 SOT 86 MARKING E4
Contextual Info: PACKAGE OUTLINES All dimensions in millimeters inches , except where noted. For complete package specifications, as well as chip dimensions, refer to individual product specification sheets. Drawings are not to scale. 4 .42 .265 10.7 6.73 12.39 ± 0.76 (0.488 ± 0.030)

04B SOT363

Abstract: 35 micro-X Package MARKING CODE F
Contextual Info: PACKAGE OUTLINES All dimensions in millimeters inches , except where noted. For complete package specifications, as well as chip dimensions, refer to individual product specification sheets. Drawings are not to scale. 4 .42 .265 10.7 6.73 12.39 ± 0.76 (0.488 ± 0.030)

micro-x marking code E1

Abstract: SOT363 marking 12X DRR1-23XX DRR1-38XX DRT1-23XX HSCH-9101 HSCH-9161 HSCH-9201 SOT 86 MARKING E4 sot-23 6121
Contextual Info: PACKAGE OUTLINES All dimensions in millimeters inches , except where noted. For complete package specifications, as well as chip dimensions, refer to individual product specification sheets. Drawings are not to scale. 4 .42 .265 10.7 6.73 12.39 ± 0.76 (0.488 ± 0.030)

Contextual Info: 2N7002DW 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@500mA=5Ω • RDS(ON), VGS@4.5V,IDS@75mA=7.5Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Battery Operated Systems, Solid-State Relays

Mosfet

Abstract: 2N7002KG8 sot-363 702
Contextual Info: 2N7002KG8 60V MOSFET Main Product Characteristics VDSS 60V RDS on 7.5ohm(max.) ID A SOT-363 Schematic Diagram Features and Benefits       Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications

D02A

Abstract: 2N7002DW S2N7002DW
Contextual Info: S2N7002DW 115mA, 60V Dual N-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free SOT-363 FEATURES      A E Low on-Resistance：7.5 Ω Low Input Capacitance：22 PF Low Out Put Capacitance：11 PF

D02A

Abstract: sot-363 702 2N7002DW
Contextual Info: 2N7002DW 115mA, 60V Dual N-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free SOT-363 FEATURES      A E Low on-Resistance：7.5 Ω Low Input Capacitance：22 PF Low Out Put Capacitance：11 PF

S2N7002DW

Abstract: MosFET
Contextual Info: S2N7002DW 115mA, 60V Dual N-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free SOT-363 MECHANICAL DATA     Case: SOT-363，Molded Plastic. Case Material-UL Flammability Rating 94V-0

Contextual Info: S2N7002DW 115mA, 60V Dual N-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free SOT-363 FEATURES      A E Low on-Resistance：7.5 Ω Low Input Capacitance：22 PF Low Out Put Capacitance：11 PF

digital transistor array

Abstract: marking 702 sot363
Contextual Info: SIEMENS BCR 169S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two galvanic internal isolated Transistors in one package • Built in bias resistor (R1=4.7kQ) Cl U 12 FI FI FI U lii ÜJ Type Marking Ordering Code Pin Configuration

Contextual Info: 2N7002DW Dual N-Channel MOSFET 6 5 1 Features: * We declare that the material of product are Halogen Free and compliance with RoHS requirements. * ESD Protected:1000V 2 4 3 SOT-363 SC-88 3 2 1 D2 G1 S1 S2 G2 D1 4 5 6 Maximum Ratings (TA=25 C Unless Otherwise Specified)

MARKING GA SOT-363

Abstract: 22PF 2N7002DW
Contextual Info: 2N7002DW Dual N-Channel MOSFET 3 2 6 5 1 Features: *Low On-Resistance : 7.5 Ω *Low Input Capacitance: 22PF *Low Out put Capacitance : 11PF *Low Threshole :1 .5V TYE *Fast Switching Speed : 11ns 1 4 5 2 4 3 SOT-363(SC-88) 6 Mechanical Data: *Case: SOT-363, Molded Plastic

sot-363 702

Abstract: MARKING CODE 702 2N7002DW SC70-6L IDS500 2N7002DW-T 2N7002DW-T/R7
Contextual Info: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS This space-efficient device contains two electrically-isolated N-Channel enhancement-mode MOSFETs. It comes in a very small SOT-363 SC70-6L package. This device is ideal for portable applications where board space is

Contextual Info: Formosa MS SMD MOSFET 2N7002DW List List. 1 Package outline. 2 Features. 2

smd mosfet sot-363

Abstract: DIODE smd marking 702 MOSFET SMD MARKING CODE 125OC 2N7002DW 702 mosfet smd marking D 702
Contextual Info: Formosa MS SMD MOSFET 2N7002DW List List. 1 Package outline. 2 Features. 2

Contextual Info: WILLAS FM120-M+ THRU 2N7002DW1T1 FM1200-M+ Small Signal MOSFET 115 mAmps,60 Volts 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers

2N7002DW

Abstract: LTA 702
Contextual Info: 2N7002DW 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@75mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Battery Operated Systems, Solid-State Relays

marking 702

Contextual Info: 2N7002DW 60V N-Channel Enhancement Mode MOSFET FEATURES 0.018 0.45 0.006(0.15) • RDS(ON), VGS@10V,IDS@500mA=5Ω • RDS(ON), VGS@4.5V,IDS@75mA=7.5Ω 0.010(0.25) • Advanced Trench Process Technology 0.087(2.20) 0.078(2.00) • High Density Cell Design For Ultra Low On-Resistance

LTA 702 N

Abstract: LTA 702 42008 2N7002DW ZE marking sot-363 marking 702
Contextual Info: 2N7002DW 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@500mA=5Ω • RDS(ON), VGS@4.5V,IDS@75mA=7.5Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Battery Operated Systems, Solid-State Relays

LTA 702 N

Contextual Info: 2N7002DW 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@500mA=5Ω • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15) • RDS(ON), VGS@4.5V,IDS@75mA=7.5Ω 0.010(0.25) 0.087(2.20) 0.078(2.00) • High Density Cell Design For Ultra Low On-Resistance

2N7002DW

Abstract: LTA 702 N
Contextual Info: 2N7002DW 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@500mA=5Ω • RDS(ON), VGS@4.5V,IDS@75mA=7.5Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Battery Operated Systems, Solid-State Relays

LTA 702 N

Abstract: MARKING GA SOT-363 sot-363 702 marking 702 MARKING TE SOT363
Contextual Info: 2N7002DW 60V N-Channel Enhancement Mode MOSFET SOT-363 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=5Ω 0.087(2.20) 0.074(1.90) • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15) • RDS(ON), VGS@4.5V,IDS@75mA=7.5Ω 0.010(0.25) • High Density Cell Design For Ultra Low On-Resistance

Contextual Info: Formosa MS SMD MOSFET 2N7002DW List List. 1 Package outline. 2 Features. 2