MARKING 7200 SO8 Search Results

MARKING 7200 SO8 Result Highlights (5)

Part	Manufacturer	Description
5962-8950303GC	Rochester Electronics LLC	ICM7555M - Dual Marked (ICM7555MTV/883)
54HC221AJ/883C	Rochester Electronics LLC	54HC221AJ/883C - Dual marked (5962-8780502EA)
54ACT157/VFA-R	Rochester Electronics LLC	54ACT157/VFA-R - Dual marked (5962R8968801VFA)
54LS37/BCA	Rochester Electronics LLC	54LS37/BCA - Dual marked (M38510/30202BCA)
MG8097/B	Rochester Electronics LLC	8097 - Math Coprocessor - Dual marked (8506301ZA)

MARKING 7200 SO8 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2DF30L Abstract: 7200 b transistor STS2DNF30L marking 7200 so8 Contextual Info: STS2DNF30L Dual n-channel 30 V, 0.09 Ω, 3 A SO-8 STripFET Power MOSFET Features Type VDSS RDS on max ID STS2DNF30L 30V <0.11Ω 3A • Standard outline for easy automated surface mount assembly ■ Low threshold gate drive S0-8 Application ■ Switching applications	Original	STS2DNF30L 2DF30L 7200 b transistor STS2DNF30L marking 7200 so8	PDF
4435a Abstract: 9435a 4410b 9407a 9952a 9936A 9926A Sc 6200 equivalent 993-9A 8435a Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Marking Drain Current Static Drain to Source On Resistance Max. Gate Threshold Voltage Zero Gate Voltage Drain Current VGSS ID DC RDS(ON) @ ID / VGS VGS(th) IDSS @ VDS,VGS=0V	Original		PDF
Si4451DY Abstract: Si4451DY-T1 Si4451DY-T1-E3 Contextual Info: Si4451DY Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.00825 at VGS = - 4.5 V - 14 0.01025 at VGS = - 2.5 V - 13 0.013 at VGS = - 1.8 V - 12 • TrenchFET Power MOSFET Pb-free APPLICATIONS	Original	Si4451DY Si4451DY-T1 Si4451DY-T1-E3 S-61005-Rev. 12-Jun-06	PDF
Si4493DY-T1 Abstract: Si4493DY-T1-E3 Si4493DY Contextual Info: Si4493DY Vishay Siliconix New Product P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.00775 at VGS = - 4.5 V - 14 0.01225 at VGS = - 2.5 V - 11 • TrenchFET Power MOSFET Pb-free APPLICATIONS Available RoHS* • Load Switch	Original	Si4493DY Si4493DY-T1 Si4493DY-T1-E3 S-61005-Rev. 12-Jun-06	PDF
Contextual Info: Si4364DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.0055 at VGS = 4.5 V 19 • TrenchFET Power MOSFET • Optimized for “Low Side” Synchronous Rectifier Operation	Original	Si4364DY Si4364DY-T1 Si4364DY-T1-E3 08-Apr-05	PDF
Contextual Info: Si4493DY Vishay Siliconix New Product P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.00775 at VGS = - 4.5 V - 14 0.01225 at VGS = - 2.5 V - 11 • TrenchFET Power MOSFET Pb-free APPLICATIONS Available RoHS* • Load Switch	Original	Si4493DY Si4493DY-T1 Si4493DY-T1-E3 18-Jul-08	PDF
Contextual Info: Si4364DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.0055 at VGS = 4.5 V 19 • TrenchFET Power MOSFET • Optimized for “Low Side” Synchronous Rectifier Operation	Original	Si4364DY Si4364DY-T1 Si4364DY-T1-E3 18-Jul-08	PDF
Si4493DY Abstract: Si4493DY-T1-E3 Contextual Info: Si4493DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.00775 at VGS = - 4.5 V - 14 0.01225 at VGS = - 2.5 V - 11 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si4493DY 2002/95/EC Si4493DY-T1-E3 Si4493DY-T1-GE3 18-Jul-08	PDF
Si4364DY Abstract: Si4364DY-T1-E3 Contextual Info: Si4364DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.0055 at VGS = 4.5 V 19 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Optimized for “Low Side” Synchronous	Original	Si4364DY Si4364DY-T1-E3 Si4364DY-T1-GE3 18-Jul-08	PDF
Contextual Info: Si4493DY Vishay Siliconix New Product P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.00775 at VGS = - 4.5 V - 14 0.01225 at VGS = - 2.5 V - 11 • TrenchFET Power MOSFET Pb-free APPLICATIONS Available RoHS* • Load Switch	Original	Si4493DY Si4493DY-T1 Si4493DY-T1-E3 08-Apr-05	PDF
Contextual Info: Si4451DY Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.00825 at VGS = - 4.5 V - 14 0.01025 at VGS = - 2.5 V - 13 0.013 at VGS = - 1.8 V - 12 • TrenchFET Power MOSFET Pb-free APPLICATIONS	Original	Si4451DY Si4451DY-T1 Si4451DY-T1-E3 08-Apr-05	PDF
Contextual Info: Si4451DY Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.00825 at VGS = - 4.5 V - 14 0.01025 at VGS = - 2.5 V - 13 0.013 at VGS = - 1.8 V - 12 • TrenchFET Power MOSFET Pb-free APPLICATIONS	Original	Si4451DY Si4451DY-T1 Si4451DY-T1-E3 18-Jul-08	PDF
Si4451DY-T1-E3 Abstract: Si4451DY Contextual Info: Si4451DY Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.00825 at VGS = - 4.5 V - 14 - 12 0.01025 at VGS = - 2.5 V - 13 0.013 at VGS = - 1.8 V - 12 • Halogen-free According to IEC 61249-2-21 Definition	Original	Si4451DY 2002/95/EC Si4451DY-T1-E3 Si4451DY-T1-GE3 18-Jul-08	PDF
Contextual Info: Si4451DY Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.00825 at VGS = - 4.5 V - 14 - 12 0.01025 at VGS = - 2.5 V - 13 0.013 at VGS = - 1.8 V - 12 • Halogen-free According to IEC 61249-2-21 Definition	Original	Si4451DY 2002/96/EC Si4451DY-T1-E3 Si4451DY-T1-GE3 18-Jul-08	PDF

Contextual Info: Si4364DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.0055 at VGS = 4.5 V 19 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Optimized for “Low Side” Synchronous	Original	Si4364DY Si4364DY-T1-E3 Si4364DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
SI7156DP Contextual Info: New Product Si7156DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0035 at VGS = 10 V 50 0.0047 at VGS = 4.5 V 50 VDS (V) 40 Qg (Typ.) 45 nC • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % Avalanche Tested	Original	Si7156DP Si7156DP-T1-E3 08-Apr-05	PDF
si4459a Abstract: Si4459ADY Contextual Info: New Product Si4459ADY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.005 at VGS = - 10 V - 29 0.00775 at VGS = - 4.5 V - 23 VDS (V) - 30 • • • • Qg (Typ.) 61 nC Halogen-free TrenchFET Power MOSFET 100 % Rg Tested	Original	Si4459ADY Si4459ADY-T1-GE3 150lectual 18-Jul-08 si4459a	PDF
Si7658DP-T1-E3 Abstract: Si7658DP Contextual Info: New Product Si7658DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0024 at VGS = 10 V 60g 0.00325 at VGS = 4.5 V 60g VDS (V) 30 Qg (Typ) 48.5 nC • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % Avalanche Tested	Original	Si7658DP Si7658DP-T1-E3 08-Apr-05	PDF
Contextual Info: Si4364DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.0055 at VGS = 4.5 V 19 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Optimized for “Low Side” Synchronous	Original	Si4364DY Si4364DY-T1-E3 Si4364DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Si4459ADY Contextual Info: New Product Si4459ADY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.005 at VGS = - 10 V - 29 0.00775 at VGS = - 4.5 V - 23 VDS (V) - 30 • • • • Qg (Typ.) 61 nC Halogen-free TrenchFET Power MOSFET 100 % Rg Tested	Original	Si4459ADY Si4459ADY-T1-GE3 150ed 08-Apr-05	PDF
Contextual Info: Si7658DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0024 at VGS = 10 V 60g 0.00325 at VGS = 4.5 V 60g VDS (V) 30 Qg (Typ.) 48.5 nC • • • • Halogen-free available TrenchFET Power MOSFET 100 % Rg Tested	Original	Si7658DP Si7658DP-T1-E3 Si7658DP-T1-GE3 08-Apr-05	PDF
si4497 Abstract: Si4497DY Contextual Info: New Product Si4497DY Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0033 at VGS = - 10 V - 36 0.0046 at VGS = - 4.5 V - 29 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si4497DY 2002/95/EC Si4497DY-T1-GE3 18-Jul-08 si4497	PDF
Contextual Info: New Product Si7156DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0035 at VGS = 10 V 50 0.0047 at VGS = 4.5 V 50 VDS (V) 40 Qg (Typ.) 45 nC • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % Avalanche Tested	Original	Si7156DP Si7156DP-T1-E3 18-Jul-08	PDF
SI7658DP-T1-E3 Abstract: Si7658DP Si7658DP-T1-GE3 74966 si7658 Contextual Info: Si7658DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0024 at VGS = 10 V 60g 0.00325 at VGS = 4.5 V 60g VDS (V) 30 Qg (Typ.) 48.5 nC • • • • Halogen-free available TrenchFET Power MOSFET 100 % Rg Tested	Original	Si7658DP Si7658DP-T1-E3 Si7658DP-T1-GE3 18-Jul-08 74966 si7658	PDF

MARKING 7200 SO8 Search Results

MARKING 7200 SO8 Result Highlights (5)

MARKING 7200 SO8 Datasheets Context Search

2DF30L

4435a

Si4451DY

Si4493DY-T1

Si4493DY

Si4364DY

Si4451DY-T1-E3

SI7156DP

si4459a

Si7658DP-T1-E3

Si4459ADY

si4497

SI7658DP-T1-E3