marking 7T transistor
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual NPN Digital Transistor z Pb-Free Package is Available. LUMH14NDW1T1G DEVICE MARKING AND ORDERING INFORMATION Device Marking 6 Shipping LUMH14NDW1T1G 7T 3000/Tape&Reel LUMH14NDW1T3G 7T 10000/Tape&Reel 5 4 1 2 3 SC-88 zAbsolute maximum ratings Ta=25°C
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LUMH14NDW1T1G
10000/Tape
3000/Tape
LUMH14NDW1T3G
SC-88
marking 7T transistor
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. GENERAL PURPOES LUMH14NDW1T1 dual digital transistors 6 5 4 1 2 3 SC-88/SOT-363 3 (2) (1) R1 Q1 Q2 R1 MAXIMUM RATINGS (TA = 25°C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-base voltage Collector Current Collector power dissipation
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LUMH14NDW1T1
SC-88/SOT-363
LUMH14NDW1T1
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BFR106
Abstract: No abstract text available
Text: , Unc. LS 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BFR106 Silicon NPN RF Transistor DESCRIPTION • Low Noise Figure NF = 2.5 dB TYP. @VCE = 8 V, lc = 20 mA, f = 900 MHz • High Gain I S2ie I 2 = 10.5 dB TYP. @VCE= 8 V,lc = 70 mA,f = 900 MHz
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BFR106
500MHz
900MHz
BFR106
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e5270
Abstract: 2SA1256 2018b
Text: Ordering number:EN1056C PNP Epitaxial Planar Silicon Transistors 2SA1256 High Frequency Amp Applications Applications Package Dimensions • Ideally suited for use in FM RF amplifiers, mixers, oscillators, converters, and IF amplifiers. unit:mm 2018B [2SA1256]
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EN1056C
2SA1256
2018B
2SA1256]
230MHz
e5270
2SA1256
2018b
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2SC3142
Abstract: FC120 marking 7T transistor
Text: Ordering number:EN3062A FC120 NPN Epitaxial Planar Silicon Composite Transistor High-Frequency General-Purpose Amp, Differential Amp Applications Features Package Dimensions • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.
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EN3062A
FC120
FC120
2SC3142,
FC120]
2SC3142
marking 7T transistor
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30613 Transistor
Abstract: 30613 EN3061A 2SC2814 FC119 transistor NPN 30613
Text: Ordering number:EN3061A FC119 NPN Epitaxial Planar Silicon Transistor High-Frequency General-Purpose Amp, Differential Amp Applications Features Package Dimensions • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.
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EN3061A
FC119
FC119
2SC2814,
FC119]
30613 Transistor
30613
EN3061A
2SC2814
transistor NPN 30613
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2SC3142
Abstract: FC120 marking 7T transistor
Text: Ordering number:EN3062A FC120 NPN Epitaxial Planar Silicon Composite Transistor High-Frequency General-Purpose Amp, Differential Amp Applications Features Package Dimensions • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.
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EN3062A
FC120
FC120
2SC3142,
FC120]
2SC3142
marking 7T transistor
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30613 Transistor
Abstract: ic 30614 30613
Text: Ordering number:EN3061A FC119 NPN Epitaxial Planar Silicon Transistor High-Frequency General-Purpose Amp, Differential Amp Applications Features Package Dimensions • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.
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EN3061A
FC119
FC119
2SC2814,
FC119]
30613 Transistor
ic 30614
30613
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Untitled
Abstract: No abstract text available
Text: BCX17 BCX18 > ÌL SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors Marking PACKAGE OUTLIN E D ETAILS ALL DIM EN SION S IN mm BCX17 = TI BCX18 = T2 3.0 2.8 0.14 0.48 7T Ö 38 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _1.02_ 0.89 _2 .00_
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BCX17
BCX18
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marking codes SOT23 SS
Abstract: marking 7T
Text: IIV C CMPT3904 NPN CMPT3906 PNP COMPLEMENTARY SILICON TRANSISTORS bvceo b v ebo VCE SAT VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE r a l The C E NTRAL S E M IC O N D U C TO R CM P T3904, CM P T3906 types are co m p le m e n ta ry s ilico n tra n s is to rs
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CMPT3904
CMPT3906
T3904,
T3906
OT-23
100MHz
marking codes SOT23 SS
marking 7T
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AOE SOT-23
Abstract: No abstract text available
Text: Central CMPT4401 NPN CMPT4403 PNP Semiconductor Corp. COMPLEMENTARY SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEM ICONDUCTOR CMPT4401, CM PT4403 types are com plem entary silicon tra n sisto rs manufactured by the epitaxial planar process, epoxy molded in a surface mount package,
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CMPT4401
CMPT4403
CMPT4401,
PT4403
OT-23
CMPT44Q3
CMPT44Q1
AOE SOT-23
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 3SK199 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3 S K 1 99 Unit in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS + 0.2 2 .9 - 0 .3 • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance : Crss = 0.015pF Typ.
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3SK199
015pF
100MHz
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FM6000
Abstract: 3SK199
Text: TOSHIBA 3SK199 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3 S K 1 99 Unit in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS • • • + 0.2 2 .9 - 0 .3 Superior Cross Modulation Performance. Low Reverse Transfer Capacitance : Crss = 0.015pF Typ.
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3SK199
015pF
FM6000
3SK199
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C185 TRANSISTOR
Abstract: 3sk151
Text: TOSHIBA 3SK151 TOSHIBA FIELD EFFECT TRANSISTOR 3 SILICON N CHANNEL DUAL GATE MOS TYPE <; k 1 m Unit in mm TV TUNER VHF M IXER APPLICATIONS. VHF RF AM PLIFIER APPLICATIONS. + 0.2 2 . 9 - Cl3 • High Conversion Fain : G^S = 24.5dB Typ. • Low Noise Figure
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3SK151
200MHz
C185 TRANSISTOR
3sk151
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c 2579 power transistor
Abstract: TRANSISTOR C 2577 transistor Bc 542 c 2579 transistor marking EB 202 transistor transistor bc 564 C 2577 transistor AE 2576 PM564 Transistors marking WZ
Text: m I TELEFUNKEN ELECTRONIC 17E » f l'îa O G 'ib O O O W i 1 BF 885 S T IIL IF M K IK IK I e le c tro n ic C ru ft* T«chno oâ«s T - ^ - o z r Silicon NPN Epitaxial Planar RF Transistor Applications; Video 8-class power stages (n TV receivers Features: • High reverse voltage
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JEDECTO126
15A3DIN
c 2579 power transistor
TRANSISTOR C 2577
transistor Bc 542
c 2579 transistor
marking EB 202 transistor
transistor bc 564
C 2577 transistor
AE 2576
PM564
Transistors marking WZ
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2SC4400
Abstract: No abstract text available
Text: Ordering num ber:EN 3 1 9 5 _ 2 S C 4 4 0 0 No.3195 NPN Epitaxial Planar Silicon Transistor SANYO i High-Frequency General-Purpose _ Amp Applications F eatures - High power gain •High cutoff frequency • Small cob, cr0 • Very small-sized package permitting the 2SC4400-applied sets to be made small and slim
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2SC4400
2SC4400-applied
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3SK232
Abstract: marking g45
Text: TOSHIBA 3SK232 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL DUAL GATE MOS TYPE 3SK232 O TV TUNER, UHF RF AMPLIFIER APPLICATIONS. • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance. : Crss = 20fF TYP. • Low Noise Figure.
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3SK232
3SK232
marking g45
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marking 7T transistor
Abstract: No abstract text available
Text: TO SHIBA 3SK232 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL DUAL GATE MOS TYPE 3SK232 O TV TUNER, UHF RF AMPLIFIER APPLICATIONS. • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance. : Crss = 20fF TYP. • Low Noise Figure.
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3SK232
961001EAA2'
marking 7T transistor
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2SA1815
Abstract: 2SC4432 MarKING JS transistor 2sA1815
Text: Ordering number: EN 4 6 2 5 2SA1815 PNP Epitaxial Planar Silicon Transistor FM, RF, MIX, IF Amp, High-Frequency General-Purpose Amp Applications F eatures • High power gain : PG = 25dB typ f= 100MHz • High cutoff frequency : fr = 750MHz typ • Low collector-to-emitter saturation voltage.
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2SA1815
100MHz)
750MHz
2SC4432.
12VJe:
2SA1815
2SC4432
MarKING JS
transistor 2sA1815
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pt2222a
Abstract: MARKING code oJ sot23 PT2222
Text: TM C C M PT2222A e n t r a l Sem i c o n d u c t o r C o r p . NPN SILICON TRANSISTOR DESCRIPTION: The C ENTRAL S E M IC O N D U C TO R CMPT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,
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PT2222A
CMPT2222A
OT-23
pt2222a
MARKING code oJ sot23
PT2222
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Untitled
Abstract: No abstract text available
Text: Central CM PT4401 NPN C M PT4403 PN P Semiconductor Corp. COMPLEMENTARY SILICON TRANSISTORS DESCRIPTION: The C E N T R A L S EM IC O N D U C T O R C M P T4401, CM PT4403 types are com plem entary silicon tran sisto rs manufactured by the epitaxial planar process,
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PT4401
PT4403
T4401,
OT-23
CMPT4401
CMPT4403
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 3SK232 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL DUAL GATE MOS TYPE 3SK232 TV TUNER, UHF RF AM PLIFIER APPLICATIONS nTT Unit in mm • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance. : Crss = 20fF TYP. : NF = 1.5dB (TYP.)
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3SK232
800MHz
TTA25A200A
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 3SK232 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL DUAL GATE MOS TYPE 3S K232 Unit in mm TV TUNER, UHF RF AM PLIFIER APPLICATIONS • • • Superior Cross Modulation Performance. Low Reverse Transfer Capacitance. : Crss = 20fF TYP. : NF = 1.5dB (TYP.)
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3SK232
800MHz
TTA25A200A
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j 6910
Abstract: transistor j 6910
Text: S IE M E N S PNP Silicon AF Transistor • • • • • BCP 69 For general AF application High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCP 68 NPN Type Marking Ordering Code (tape and reel) Pin Coni igura tion
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Q62702-C2130
Q62702-C2131
Q62702-C2132
Q62702-C2133
OT-223
EHP002M
fiS35fe05
j 6910
transistor j 6910
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