MARKING 8FB Search Results

HBC817

Abstract: hbc8
Contextual Info: HI-SINCERITY Spec. No. : HE6831 Issued Date : 1994.01.25 Revised Date : 2008.01.30 Page No. : 1/4 MICROELECTRONICS CORP. HBC817 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC817 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages.

8FC SOT23

Abstract: marking 8FC 8fc marking code BC817 on 8gb transistor sot23 marking 8fc bc818 ic 817 marking 8fb silicon power 8GB
Contextual Info: BC817/BC818 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 SWITCHING AND AMPLIFIER APPLICATIONS • Sutable for AF-Driver stages and low power output stages • Complement to BC807/BC808  ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Symbol Collector Emitter Voltage :BC817

Bc817 sot-23

Abstract: 8fc smd 8FC SOT23 KC817-25 BC817 smd KC817-40 marking 8FC marking 8fb marking AF BC817
Contextual Info: Transistors SMD Type NPN Silicon AF Transistors KC817 BC817 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 For general AF applications. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 High collector current. +0.05 0.1-0.01 +0.1 0.97-0.1

Contextual Info: SMD Type Product specification KC817 BC817 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 For general AF applications. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 High collector current. +0.05 0.1-0.01 +0.1 0.97-0.1 High current gain.

Contextual Info: BC817/BC818 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • SUITABLE FOR AF-DRIVER STAGES AND LOW POWER OUTPUT STAGES • Complement to BC807/BC808 ABSOLUTE MAXIMUM RATINGS Ta=25°C Rating Unit 50 30 45 25 5 800 310 150 —6 5 ^1 5 0

SOT23 MARKING CODE 8G

Abstract: 8FC SOT23 marking 8fb sot23 marking 8fc
Contextual Info: BC817/BC818 NPN EPITAXIAL SILICON TRAN SISTO R SOT-23 SW ITCHING AND AM PLIFIER APPLICATIONS • Sutable for AF-Driver stages and low power output stages • Complement to BC807/BC808 A BSO LU TE MAXIMUM RATINGS Ta =25TC Characteristic Symbol Collector Emitter Voltage :BC817

Contextual Info: BC817/BC818 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for AF-Driver stages and low power output stages • Complement to BC807/BC808 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Collector Emitter Voltage

8FC SOT23

Abstract: 8fc marking code on 8gb transistor BC817 sot23 marking 8fc vebo 25 BC818 marking 8fb
Contextual Info: BC817/BC818 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • SUITABLE FOR AF-DRIVER STAGES AND LOW POWER OUTPUT STAGES • Complement to BC807/BC808 ABSOLUTE MAXIMUM RATINGS Ta= 25°C R ating Symbol C haracteristic Collector Emitter Voltage: BC817

8fc marking code

Abstract: BC817 BC818 marking 8FC
Contextual Info: BC817/BC818 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for AF-Driver stages and low power output stages • Complement to BC807/BC808 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector Emitter Voltage : BC817

8FC SOT23

Abstract: TRANSISTOR 8FB sot23 marking 8fc marking 8FC sot23 marking 8fB Transistor 8fc transistor MARKING my BC81740MTF 8FC+SOT23
Contextual Info: BC817/BC818 tm NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages 3 • Complement to BC807/ BC808 2 1 Absolute Maximum Ratings* Symbol VCBO VCEO 1. Base 2. Emitter 3. Collector

induction cooker schematic diagram

Abstract: SMD DIODE P31A schematic diagram of chinese induction cooker induction cooker fault E1 induction cooker component list on pcb induction cooker schematic diagram E1 error schematic diagram induction cooker p112a IC RTS 993 for electric bell induction cooker circuit diagram
Contextual Info: PRODUCT CATALOG & DESIGN GUIDE Protection Thyristor Semiconductor Products Littelfuse Circuit Prot Solutions Port Consumer Electronics Telecom White Goods Medical Equipment TVSS and Power DESIGN SUPPORT Live Application Design and Technical Support—Tap into our expertise. Littelfuse engineers are available around the world to help you address design challenges and develop

BC817

Abstract: BC818
Contextual Info: BC817/BC818 BC817/BC818 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC807/BC808 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

BC817

Abstract: BC818 8FC SOT23
Contextual Info: BC817/BC818 BC817/BC818 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC807/BC808 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

BC817

Abstract: BC818 marking code fairchild marking 8FC
Contextual Info: BC817/BC818 BC817/BC818 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC807/BC808 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

marking 8FC

Contextual Info: BC817/BC818 BC817/BC818 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC807/BC808 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

8fc marking code

Abstract: TRANSISTOR 8FB 8FC SOT23 AF MARKING CODE B 817 ic 817 ic 817 b pc 817 BC817 BC818
Contextual Info: BC817/BC818 NPN EPITAXIAL SILICON TRANSISTOR S O T-23 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for A F-D river stages and low pow er output stages • C om plem ent to BC 807/BC 808 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollecto r E m itter V oltage

Contextual Info: Carbon Film Resistors, Flame-Retardant Fuse Type Carbon Film Resistors, Flame-Retardant Fuse Type Type: ERD2FC 0.25 W ERD6FC (0.166 W) n Features l l l l l l l Fusing characteristic áááááááááá (within 60 s at over 2.25 W load) Pulse load resistance

erds2fj

Abstract: erds2tyj111t marking 8fb ERD2FC
Contextual Info: Carbon Film Resistors, Flame-Retardant Fuse Type Carbon Film Resistors, Flame-Retardant Fuse Type Type: ERD2FC 0.25 W ERD6FC (0.166 W) • Features ● ● ● ● ● ● Fusing characteristic áááááááááá Shall fuse within 60 s at over 2.25 W load

Contextual Info: Carbon Film Resistors, Flame-Retardant Fuse Type Carbon Film Resistors, Flame-Retardant Fuse Type Type: ERD2FC 0.25 W ERD6FC (0.166 W) n Features l l l l l l l Fusing characteristic áááááááááá Shall fuse within 60 s at over 2.25 W load Resistance to pulse load áá Clearly specified by pulse limit curve

Contextual Info: Carbon Film Resistors, Flame-Retardant Fuse Type Carbon Film Resistors, Flame-Retardant Fuse Type Type: ERD2FC 0.25 W ERD6FC (0.166 W) n Features l l l l l l l Fusing characteristic áááááááááá (within 60 s at over 2.25 W load) Pulse load resistance

HBC817

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6831 Issued Date : 1994.01.25 Revised Date : 2002.10.24 Page No. : 1/3 HBC817 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC817 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages.

8FC SOT23

Abstract: BC81716MTF TRANSISTOR 8FB BC818 on 8gb transistor BC81740MTF BC807 BC808 BC817 BC81725MTF
Contextual Info: BC817/BC818 tm NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages 3 • Complement to BC807/ BC808 2 1 Absolute Maximum Ratings* Symbol VCBO VCEO 1. Base 2. Emitter 3. Collector

transistor 8gb sot 23

Contextual Info: BC817/BC818 tm NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC807/ BC808 3 2 1 Absolute Maximum Ratings* Symbol VCBO VCEO 1. Base 2. Emitter 3. Collector

Contextual Info: MPQ28261 21V, 3A, 500kHz Synchronous Step-Down Coverter The Future of Analog IC Technology DESCRIPTION FEATURES The MPQ28261 is a synchronous, rectified, step-down, switch-mode converter with built-in 120mΩ high-side MOSFET and 20mΩ low-side MOSFET. It offers a very compact solution to