MARKING A7 DIODE SCHOTTKY Search Results

st smd diode marking code VU

Abstract: st smd marking code VU st smd diode marking code st smd diode VU smd marking code fj Device marking code u5 diode Diode marking m7 DIODE smd marking CODE WA smd diode marking 325 AFL smd Marking
Contextual Info: Schottky Barrier Diode mtmm o u t l i n e Single Diode D1FH3 U nit I mm Package : 1F W eight 0.058« T y p 30V 3A ' I Feature C ath o d e m ark C O t • Small SMD • S V f = 0 .36V • Super-Low V f= 0 .36V asm » m CM - I IO ) • 'J v S S M D QC"— M —

Diode Marking z3 SOT-23

Abstract: schottky diode marking A7 Y1 SOT-23 marking code X5 SOT23 SOT-23 MARKING w5 X2 marking code sot 23 MARKING X4 SOT23 marking C20 sot-23 sot marking code w7 Z4 SOT23
Contextual Info: SCHOTTKY BARRIER DIODES TABLE 7 - SILICON PLANAR EPITAXIAL SCH O TTKY BARRIER DIODES The construction of these epitaxial, planar, passivated diodes utilises a Schottky barrier resulting in devices which have a high breakdown voltage and ultra fast switching capabilities.

Schottky Diode Marking C3

Abstract: diode hp 2800 HSMS-28XX diode hp 2835 schottky hp 2800 diode 2805 diode bridge HP 2804 schottky diode marking A7 A5 sot-23 single DIODE hp 2817
Contextual Info: Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-28XX Series Features Package Lead Code Identification • Surface Mount SOT-23/SOT143 Package • Low Turn-On Voltage As Low as 0.34 V at 1 mA TOP VIEW SINGLE 3 SERIES 3 1 1 COMMON ANODE 3 COMMON

Contextual Info: BAV99W THRU BAS16W SMALL SIGNAL SCHOTTKY BARRIER DIODES SOT-323 SC-70 0.016(0.40) 0.012(0.30) Low current leakage Low forward voltage 3 0.053(1.35) 0.045(1.15) Small outline surface mount SOT-23 PACKAGE 0.094(2.40) TOP VIEW 1 0.079(2.00) 2 0.026(0.65) 0.016(0.40)

BAW56

Abstract: SOT-23 BAS16 BAV99
Contextual Info: BAS16 BAV99 THRU SMALL SIGNAL SCHOTTKY BARRIER DIODES SOT-23 0.020 0.51 0.014(0.35) Low current leakage Low forward voltage 3 0.055(1.40) 0.047(1.19) Small outline surface mount SOT-23 PACKAGE 0.118(3.00) TOP VIEW 1 0.083(2.10) 2 0.041(1.05) 0.039(1.00) 0.033(0.85)

MFW SOT23

Abstract: Diode marking MFW Diode sot23 marking MFW L31 diode sot-23 sot23 marking MFW MFW SOT23 MARKING schottky diode marking A7 diode T31 Marking HSMS 2821 SOT-23 MARKING T31
Contextual Info: Wfw\ mLUMHP AECWKLAERTDT Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-28XX Series Features • Surface Mount SOT-23/ SOT-143 Package • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Low FIT (Failure in Time) Rate* • Six-sigma Quality Level

Contextual Info: BAS16 BAV99 THRU SMALL SIGNAL SCHOTTKY BARRIER DIODES SOT-23 0.020 0.51 0.014(0.35) Low current leakage Low forward voltage 3 0.055(1.40) 0.047(1.19) Small outline surface mount SOT-23 PACKAGE 0.118(3.00) TOP VIEW 1 0.083(2.10) 2 0.041(1.05) 0.039(1.00) 0.033(0.85)

agilent RF Marking 07

Abstract: AN1124 marking a4 SOT-143 marking code C4 Sot 23-5 HSMS-280X
Contextual Info: Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-280x Series Features • Surface Mount Packages • High Breakdown Voltage • Low FIT Failure in Time Rate* • Six-sigma Quality Level • Single, Dual and Quad Versions • Tape and Reel Options

marking 2U diode t5

Abstract: diode hp 2800 hp 2800 diode diode hp 2835 schottky schottky diode marking A7 marking 2U diode C3 SOT23 HSMS2820 B7 SOT23 HSMS-2820
Contextual Info: rh p % H E W L E T T ftX fl PA CK A RD Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-28XX Series Features Package Lead Code Identification • Surface Mount SOT-23/SOT143 Package • Low Turn-On Voltage A s Low as 0.34 V at 1 mA • Low FIT (Failure in Time)

marking A5 sot363

Abstract: marking code C4 Sot 23-5 marking code diode ak
Contextual Info: Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-280x Series Features • Surface Mount Packages • High Breakdown Voltage • Low FIT Failure in Time Rate* • Six-sigma Quality Level • Single, Dual and Quad Versions • Tape and Reel Options

1SS402

Contextual Info: 1SS402 TOSHIBA TOSHIBA DIODE TENTATIVE HIGH SPEED SWITCHING APPLICATIONS SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS402 Unit in mm 2.1 ± 0.1 • • • • Two independent diodes are mounted on four-pin ultra-small packages that are suitable for higher mounting densities.

marking code C4 Sot 23-5

Abstract: sot143 marking code A5 2805 diode bridge Marking Code ABC SOT 143 footprint SOT-363 a7 DIODES SC-70 MARKING C3 Analog devices code marking AB marking code tc sot 363 diode marking code C3 sot23
Contextual Info: Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-280x Series Features • Surface Mount Packages • High Breakdown Voltage • Low FIT Failure in Time Rate* • Six-sigma Quality Level • Single, Dual and Quad Versions • Tape and Reel Options

LVX541

Contextual Info: MC74LVX541 Octal Bus Buffer The MC74LVX541 is an advanced high speed CMOS octal bus buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

diode hp 2800

Abstract: hp 2800 diode diode hp 2810 marking code C9 HP 2804 HP 2835 diode hp 2835 schottky HP 2810 Schottky Diode Marking C3 1N5711
Contextual Info: Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-28XX Series Features Package Lead Code Identification • Surface Mount SOT-23/SOT143 Package • Low Turn-On Voltage As Low as 0.34 V at 1 mA TOP VIEW SINGLE 3 SERIES 3 1 1 COMMON ANODE 3 COMMON

SOT-363 a7

Abstract: marking A5 sot363 marking code C4 Sot 23-5 DIODES SC-70 MARKING C3 SOT 363 marking CODE a7 AVAGO DATE CODE MARKING AVAGO DATE CODE MARKING symbol
Contextual Info: HSMS-280x Surface Mount RF Schottky Barrier Diodes Data Sheet Description/Applications Features These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifications and package configurations to give the designer wide flexibility. The

Contextual Info: MC74VHC541 Octal Bus Buffer The MC74VHC541 is an advanced high speed CMOS octal bus buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

Contextual Info: MC74VHC541 Octal Bus Buffer The MC74VHC541 is an advanced high speed CMOS octal bus buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

diode hp 2800

Abstract: 2805 diode bridge hp 2800 hp 2800 diode HP 2804 SOT-23 marking l31 marking code C5 l31 sot23 common anode schottky power DIODE MARKING B4
Contextual Info: Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-28XX Series Features Package Lead Code Identification • Surface Mount SOT-23/SOT143 Package • Low Turn-On Voltage As Low as 0.34 V at 1 mA TOP VIEW SINGLE 3 SERIES 3 1 1 COMMON ANODE 3 COMMON

HP 2804

Abstract: HP 2810 diode hp 2800 diode hp 2835 schottky sot143 marking code A3 HSMS-2820 hp 2800 diode HP 2835 HP 2835 306
Contextual Info: Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-28XX Series Features Package Lead Code Identification • Surface Mount SOT-23/SOT143 Package • Low Turn-On Voltage As Low as 0.34 V at 1 mA TOP VIEW SINGLE 3 SERIES 3 1 1 COMMON ANODE 3 COMMON

diode hp 2835 schottky

Abstract: diode hp 2800 diode hp 2810 HP 2810 mark a7 sot23 DIODE hp 2800 diode HP 2804 HP 2835 306 HSMS-28XX diode hp 2835
Contextual Info: Thp% mürA HEW LETT« PACKARD Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-28XX Series Features • Surface M ount SOT-23/SOT143 Package • Low Turn-O n V oltage A s Low as 0.34 V a t 1 inA • Low FIT (F ailu re in Tim e) Rate* • Six-sigm a Q uality L evel

Contextual Info: MC74VHC541 Octal Bus Buffer The MC74VHC541 is an advanced high speed CMOS octal bus buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

Contextual Info: MC74LVX540 Octal Bus Buffer Inverting The MC74LVX540 is an advanced high speed CMOS inverting octal bus buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

1SS406

Contextual Info: 1SS406 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS406 High Speed Switching Application Low forward voltage : VF 3 = 0.50V (typ.) Low reverse current : IR= 0.5µA (max) Small total capacitance : CT = 3.9pF (typ.) Unit: mm Maximum Ratings (Ta = 25°C)

1SS405

Contextual Info: 1SS405 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS405 High Speed Switching Application Low forward voltage : VF 3 = 0.50V (typ.) Low reverse current : IR= 0.5µA (max) Small total capacitance : CT = 3.9pF (typ.) Unit: mm Maximum Ratings (Ta = 25°C)