MARKING AA FET Search Results

AP2924

Abstract: C166 C167 C167CR C167CR-16RM C167CR-LM SAK-C167CR-16RM
Contextual Info: Microcontroller Components Errata Sheet September 28, 1998 / Release 1.2 Device: SAK-C167CR-16RM Stepping Code / Marking: ES-AA, AA Package: MQFP-144 This Errata Sheet describes the deviations from the current user documentation. The classification and numbering system is module oriented in a continual ascending sequence

C166

Abstract: C167 C167CR C167CR-16RM C167CR-LM SAK-C167CR-16RM C167 instruction set
Contextual Info: Microcomputer Components Technical Support Group Munich HL DC AT Errata Sheet December 23, 1997 / Release 1.1 Device : Stepping Code / Marking : SAK-C167CR-16RM ES-AA, AA The C167CR-16RM is the 128 Kbyte ROM version of the C167CR, including an on-chip CAN module, 2 Kbyte XRAM module, and a PLL oscillator circuit.

AP2420

Abstract: 1302h C166 I2C PEC single byte software 1303H AP2424 C161PI C167 SAB-C161PI-LF SAB-C161PI-LM SAF-C161PI-LF
Contextual Info: Microcontroller Components Errata Sheet July 6, 2001 / Release 1.4 Device: SAB-C161PI-LM, SAF-C161PI-LM, SAB-C161PI-LM3V SAB-C161PI-LF, SAF-C161PI-LF SAB-C161PI-LF3V Stepping Code / Marking: Package: ES-AA, AA ES-BA-H, BA-H P-MQFP-100-2, P-TQFP-100-1 This Errata Sheet describes the deviations from the current user documentation. The

Q62702-F1394

Contextual Info: Infineon faîhnoîogte» G aA s FET CFY 3 5 Data Sheet • • Low noise High gain • For low-noise front end amplifiers • For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel

marking AA DIODE SOD 923

Abstract: bas40sl diode smd marking AA 25 FAIRCHILD DIODE fairchild 923
Contextual Info: BAS40SL Schottky Barrier Diodes Features • • • • Low Forward Voltage Drop Fast switching Very Small and Thin SMD package Profile height, 0.43mm max • Footprint, 1.0 x 0.6 mm Connection Diagram 1 2 2 SOD-923 Marking: AA Absolute Maximum Ratings *

Contextual Info: BAS40SL Schottky Barrier Diodes Features • • • • Low Forward Voltage Drop Fast switching Very Small and Thin SMD package Profile height, 0.43mm max • Footprint, 1.0 x 0.6mm Connection Diagram 1 2 2 SOD-923F Marking: AA Absolute Maximum Ratings *

FAIRCHILD SMD MARKING

Abstract: BAS40SL FAIRCHILD DIODE marking aa
Contextual Info: BAS40SL Schottky Barrier Diodes Features • • • • Low Forward Voltage Drop Fast switching Very Small and Thin SMD package Profile height, 0.43mm max • Footprint, 1.0 x 0.6mm Connection Diagram 1 2 2 SOD-923F Marking: AA Absolute Maximum Ratings *

SAB-C161K-L16M

Abstract: C161K-L16M C166 JMPR
Contextual Info: Microcontroller Components Errata Sheet October 2, 1998 / Release 1.1 Device: Stepping Code / Marking: Package: SAB-C161K-L16M AA MQFP-80 This Errata Sheet describes the deviations from the current user documentation. The classification and numbering system is module oriented in a continual ascending sequence

C161O-L16M

Abstract: C166 SAB-C161O-L16M TCL SERVICE MANUAL
Contextual Info: Microcontroller Components Errata Sheet October 2, 1998 / Release 1.1 Device: Stepping Code / Marking: Package: SAB-C161O-L16M AA MQFP-80 This Errata Sheet describes the deviations from the current user documentation. The classification and numbering system is module oriented in a continual ascending sequence

C161V-L16M

Abstract: C166 SAB-C161V-L16M JMPR
Contextual Info: Microcontroller Components Errata Sheet October 2, 1998 / Release 1.1 Device: Stepping Code / Marking: Package: SAB-C161V-L16M AA MQFP-80 This Errata Sheet describes the deviations from the current user documentation. The classification and numbering system is module oriented in a continual ascending sequence

SAK-C167S-4RM

Abstract: SAB-C167S-4RM C167 C167CR-LM C167S C167S-4RM
Contextual Info: Microcomputer Components Technical Support Group Munich HL DC AT Errata Sheet November 28, 1997 / Release 1.0 Device : Stepping Code / Marking : SAB-C167S-4RM, SAK-C167S-4RM AA The C167S-4RM is a version of the C167 with 32 Kbyte on-chip ROM and a PLL oscillator circuit.

SAB-C161PI-LM

Abstract: C161PI C167 SAB-C161PI-LF SAF-C161PI-LF SAF-C161PI-LM 1301H ap2420
Contextual Info: Microcontroller Components Errata Sheet February 17, 2000 / Release 1.3 Device: SAB-C161PI-LM, SAF-C161PI-LM SAB-C161PI-LF, SAF-C161PI-LF Stepping Code / Marking: Package: ES-AA P-MQFP-100-2, P-TQFP-100-1 This Errata Sheet describes the deviations from the current user documentation. The

gaas fet marking B

Abstract: gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K"
Contextual Info: Marking manner of MITSUBISHI GaAs FET QL-1104E-A July/2008 [Leadless ceramic package] GD-26, 27 Terminal position (from Top View) Top View ① ② B 0 1AL B 0 1AL Electrodes direction: ① Gate ② Source ③ Drain ② ③ ① ② ③ Drain Gate Source

VN3205N6

Abstract: diode marking CODE VN G1 vn2lw VN3205 SOT89 MARKING CODE 43 diode marking CODE VN S2
Contextual Info: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination

VN3205

Contextual Info: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices

DIODE S4 08

Abstract: vn3205p-g VN3205N8-G diode sot-89 marking code S1
Contextual Info: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with

marking 3A sot-89

Abstract: 3V02 SIVN3205 VN3205
Contextual Info: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with

b0915

Abstract: VN3205
Contextual Info: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with

DN2625

Abstract: 125OC DN2625K4-G DN2625K6-G DSFP-DN2625 ultrasound piezoelectric array
Contextual Info: DN2625 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► The Supertex DN2625 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate

sivn

Abstract: vn2lw VN3205N8-G seimens vn3205 125OC VN3205N3-G VN3205ND DMOS B0521
Contextual Info: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with

a7840

Abstract: fdfs6n303
Contextual Info: FDFS6N303 FETKEY N-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductor’s FETKEY technology combines high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package. The MOSFET and

Contextual Info: FDG314P Digital FET, P-Channel General Description Features This P-Channel enhancement mode field effect transistor is produced using Fairchild Semiconductor’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize onstate resistance at low gate drive conditions. This

.a h marking

Abstract: marking A S220M
Contextual Info: OTHER PRODUCTS G aA s f ie ld e f f e c t t r a n s is t o r s POWER FET'S m t t f ì n t a in E U c fy c n ta XMFP Series FEATURES • High power output ■ Excellent linear power gain APPLICATIONS ■ C-band power amps up to 6G H z ■ W ireless telecommunication base stations G SM , DCS,

mrf9382

Abstract: MRF9382T1
Contextual Info: Order this document BY MRF9382T1PP/D MRF9382T1 Product Preview Silicon Lateral FET, N-Channel Enhancement-Mode MOSFET Designed for use in low voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems. • Performance Specifications at 900 MHz: