MARKING AB FAIRCHILD Search Results

Contextual Info: BAS16SL Small Signal Diodes Features • • • • • Connection Diagram Low Forward Voltage Drop Fast switching Very Small and Thin SMD package Profile height, 0.43mm max Footprint, 1.0 x 0.6mm 1 2 2 SOD-923F Marking: AB Absolute Maximum Ratings * Symbol

FAIRCHILD SMD MARKING

Abstract: BAS16SL FAIRCHILD DIODE
Contextual Info: BAS16SL Small Signal Diodes Features • • • • • Connection Diagram Low Forward Voltage Drop Fast switching Very Small and Thin SMD package Profile height, 0.43mm max Footprint, 1.0 x 0.6mm 1 2 2 SOD-923F Marking: AB Absolute Maximum Ratings * Symbol

BAS16SL

Abstract: smd marking QT
Contextual Info: BAS16SL Small Signal Diodes Features • Low Forward Voltage Drop • Fast switching • Very Small and Thin SMD package • Profile height, 0.43mm max • Footprint, 1.0 x 0.6 mm Connection Diagram 1 2 2 SOD-923 Marking: AB Absolute Maximum Ratings * Symbol

FAIRCHILD SMD MARKING

Abstract: BAS16SL MARKING AB FAIRCHILD
Contextual Info: BAS16SL Small Signal Diodes Features • • • • • Connection Diagram Low Forward Voltage Drop Fast switching Very Small and Thin SMD package Profile height, 0.43mm max Footprint, 1.0 x 0.6 mm 1 2 2 SOD-923 Marking: AB Absolute Maximum Ratings * Symbol

PART NUMBER MARKING SC70-6

Abstract: pin configuration NPN transistor 2N3904 MARKING CODE 21 SC70
Contextual Info: FFB3946 FFB3946 E2 B2 C1 Package: SC70-6 Device Marking: .AB Note: The " . " dot signifies Pin 1 C2 B1 Transistor 1 is NPN device, Transistor 2 is PNP device. E1 NPN & PNP General Purpose Amplifier SC70-6 Surface Mount Package ThIs dual complementary device was designed for use as a general purpose amplifier and switching

Contextual Info: FQD9N25 / FQU9N25 N-Channel QFET MOSFET 250 V, .4 A, PΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to

FGH40T100

Abstract: FGH40T100SMD_F155
Contextual Info: FGH40T100SMD 1000 V, 40 A Field Stop Trench IGBT Features General Description • High Current Capability Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as UPS, welder and

Contextual Info: SEMICONDUCTOR tm FDZ201N N-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ201N minimizes both PCB space and Rds on .

Y1416

Abstract: vk sot-363 LCX00 AND8004 MC74HC04ADR2 ASE CHUNGLI date code marking "marking Code" V2 MX marking code sot23 marking a6 sot363
Contextual Info: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to provide our customers with easy access to this information

marking codes fairchild

Abstract: SOT-363 a7 wz 74 marking SOT-363 MARKING WF marking 324 tssop 16 vk sot-363 On Semiconductor Logic Data Code and Traceability marking code cp SOT-363 A1 marking codes ON TSOP6 MARKING 6L
Contextual Info: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Prepared by: Douglas Buzard, Logic Product Engineering Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to

marking codes fairchild

Abstract: HEP08 fairchild marking codes sot-23 TOREX TOP CODE AND8004 t324 SOT-353 A7 marking L5 sot363 xaa643 and8004 D
Contextual Info: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Prepared by: Douglas Buzard, Logic Product Engineering Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to

FGD4536

Contextual Info: FGD4536 360 V PDP Trench IGBT Features General Description • • • • • Using novel trench IGBT technology, Fairchild’s new series of trench IGBTs offer the optimum performance for consumer appliances and PDP TV applications where low conduction and

FDC6305N

Contextual Info: =Ml C O N D U C TO R tm FDC6305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features T h e s e N -C h a n n e l lo w th re s h o ld 2 .5 V s p e c ifie d MOSFETs are produced using Fairchild Semiconductor's a d v a n c e d P o w e rT re n c h p ro c e s s th a t h a s b e e n

Contextual Info: FGP20N60UFD 600 V, 20 A Field Stop IGBT Features General Description • • • • • Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.

Contextual Info: FQD4N25 N-Channel QFET MOSFET 250 V, 3 A, 1.75 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state

Contextual Info: FQP2N40 N-Channel QFET MOSFET 400 V, 1.8 A, 5.8 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to

Contextual Info: FQP46N15 N-Channel QFET MOSFET 150 V, 45.6 A, 42 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state

Contextual Info: FQP2N90 N-Channel QFET MOSFET 900 V, 2.2 A, 7.2 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state

Contextual Info: FQD6N25 N-Channel QFET MOSFET 250 V, 4.4 A, 1.0 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state

Contextual Info: FQD7N30 N-Channel QFET MOSFET 300 V, 5.5 A, 700 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state

Contextual Info: FQP12P20 P-Channel QFET MOSFET -200 V, -11.5 A, 470 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state

Contextual Info: FQD4N20 N-Channel QFET MOSFET 200 V, 3.0 A, 1.4 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state

Contextual Info: FQD7P20 P-Channel QFET MOSFET -200 V, -5.7 A, 690 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state

Contextual Info: FQD2N90 / FQU2N90 N-Channel QFET MOSFET 900 V, 1.7 A, 7.2 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to