MARKING B14 ON SEMICONDUCTOR Search Results
MARKING B14 ON SEMICONDUCTOR Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| SCL3400-D01-004 | Murata Manufacturing Co Ltd | 2-axis (XY) digital inclinometer |
|
||
| SCC433T-K03-PCB | Murata Manufacturing Co Ltd | 2-Axis Gyro, 3-axis Accelerometer combination sensor on Evaluation Board |
|
||
| SCC433T-K03-10 | Murata Manufacturing Co Ltd | 2-Axis Gyro, 3-axis Accelerometer combination sensor |
|
||
| SCC433T-K03-004 | Murata Manufacturing Co Ltd | 2-Axis Gyro, 3-axis Accelerometer combination sensor |
|
||
| MRUS74SK-001 | Murata Manufacturing Co Ltd | Magnetic Sensor |
|
MARKING B14 ON SEMICONDUCTOR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
SchottkyContextual Info: RB520S-30 Taiwan Semiconductor Small Signal Product 200mW, Low VF SMD Schottky Barrier Diode FEATURES - Low power loss, high current capability, low VF - Surface mount device type - Moisture sensitivity level 1 - Matte Tin Sn lead finish with Nickel(Ni) underplate |
Original |
RB520S-30 200mW, OD-523F OD-523F MIL-STD-202, C/10s S1404003 Schottky | |
|
Contextual Info: TSP10U60S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement |
Original |
TSP10U60S J-STD-020 2011/65/EU 2002/96/EC O-277A D1408043 | |
|
Contextual Info: 1SS400 Taiwan Semiconductor Small Signal Product 200mW, SMD High Speed Switching Diode FEATURES - Fast switching device trr < 4.0 ns - Surface mount device type - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish - Pb free and RoHS compliant - Green compound (Halogen free) with suffix "G" on |
Original |
1SS400 200mW, OD-523F OD-523F MIL-STD-202, C/10s S1404002 | |
|
Contextual Info: TSP20U60S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement |
Original |
TSP20U60S J-STD-020 2011/65/EU 2002/96/EC O-277A D1408047 | |
|
Contextual Info: TSP10U45S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement |
Original |
TSP10U45S J-STD-020 2011/65/EU 2002/96/EC O-277A D1408042 | |
|
Contextual Info: TSSA3U45 Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020 |
Original |
TSSA3U45 J-STD-020 2011/65/EU 2002/96/EC DO-214AC JESD22-B102 D1401011 | |
|
Contextual Info: TSP15U50S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement |
Original |
TSP15U50S J-STD-020 2011/65/EU 2002/96/EC O-277A D1408046 | |
|
Contextual Info: RS1JLS thru RS1MLS Taiwan Semiconductor CREAT BY ART Surface Mount Fast Recovery Rectifiers FEATURES - Ideal for automated placement - Compact package size - High surge current capability - Low power loss, high efficiency - Moisture sensitivity level: level 1, per J-STD-020 |
Original |
J-STD-020 2011/65/EU 2002/96/EC OD123HE AEC-Q101 JESD22-B102 D1403011 | |
|
Contextual Info: TSN520M60 Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement |
Original |
TSN520M60 J-STD-020 2011/65/EU 2002/96/EC D1408069 | |
|
Contextual Info: TSPB10U45S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High forward surge capability - Ideal for automated placement |
Original |
TSPB10U45S J-STD-020 2011/65/EU 2002/96/EC D1407011 | |
|
Contextual Info: TSP15U100S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement |
Original |
TSP15U100S J-STD-020 2011/65/EU 2002/96/EC O-277A D1408045 | |
|
Contextual Info: TSPB15U50S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High forward surge capability - Ideal for automated placement |
Original |
TSPB15U50S J-STD-020 2011/65/EU 2002/96/EC D1407012 | |
|
Contextual Info: S1JLS thru S1MLS Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Rectifiers - Ideal for automated placement - Compact package size - High surge current capability - Low power loss, high efficiency - Moisture sensitivity level: level 1, per J-STD-020 |
Original |
J-STD-020 2011/65/EU 2002/96/EC OD123HE AEC-Q101 JESD22-B102 D1404004 | |
|
Contextual Info: TSP12U120S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High forward surge capability - Ideal for automated placement |
Original |
TSP12U120S J-STD-020 2011/65/EU 2002/96/EC O-277A D1408044 | |
|
|
|||
|
Contextual Info: SS12LS thru SS115LS Taiwan Semiconductor CREAT BY ART Surface Mount Schottky Barrier Rectifier FEATURES - Ideal for automated placement - Compact package size, profile <0.85mm - High surge current capability - Low power loss, high efficiency - AEC-Q101 qualified and Halogen free only |
Original |
SS12LS SS115LS AEC-Q101 J-STD-020 2011/65/EU 2002/96/EC OD123HE D1406025 | |
|
Contextual Info: MBRF3045CT-Y thru MBRF30150CT-Y Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and |
Original |
MBRF3045CT-Y MBRF30150CT-Y 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1405039 | |
SchottkyContextual Info: SS34L thru SS310L Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020 |
Original |
SS34L SS310L J-STD-020 2011/65/EU 2002/96/EC D1405056 Schottky | |
10U100
Abstract: TSP10U120S
|
Original |
TSP10U100S TSP10U120S J-STD-020 2011/65/EU 2002/96/EC O-277A D1408038 10U100 TSP10U120S | |
transistor c143
Abstract: C143 Transistor ze 003 ic ZUA SOT23 ze 003 zua SOT-23 ZE SOT-23 marking CODE ZUA SOT23
|
Original |
DTC143 OT523/SOT323/SOT23 OT-723 S1404021 transistor c143 C143 Transistor ze 003 ic ZUA SOT23 ze 003 zua SOT-23 ZE SOT-23 marking CODE ZUA SOT23 | |
|
Contextual Info: MBR3045CT-Y thru MBR30150CT-Y Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and |
Original |
MBR3045CT-Y MBR30150CT-Y 2011/65/EU 2002/96/EC O-220AB JESD22-B102 D1405038 | |
|
Contextual Info: HS1AL thru HS1ML Taiwan Semiconductor CREAT BY ART High Efficient Surface Mount Rectifiers FEATURES - Glass passivated junction chip - Ideal for automated placement - Low profile package - Low power loss, high efficiency - Fast switching for high efficiency |
Original |
J-STD-020 2011/65/EU 2002/96/EC AEC-Q101 D1405079 | |
SchottkyContextual Info: MBRF2045CT-Y thru MBRF20200CT-Y Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and |
Original |
MBRF2045CT-Y MBRF20200CT-Y 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1405040 Schottky | |
|
Contextual Info: TSSA3U45 Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability |
Original |
TSSA3U45 J-STD-020 2011/65/EU 2002/96/EC DO-214AC JESD22-B102 D1401011 | |
marking b14 diodeContextual Info: TSSA3U45 Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability |
Original |
TSSA3U45 J-STD-020 2011/65/EU 2002/96/EC DO-214AC JESD22-B102 D1401011 marking b14 diode | |