MARKING B82 Search Results

B824 transistor

Abstract: a564 transistor 335 35K 106 16k radial capacitor Thomson TH 5221 transistor a564 pc 8178 T110A335J015AS a684 transistor
Contextual Info: INDEX Tantalum Hermetically Sealed/Axial Capacitors Military Ordering Information 4 Military Marking Information 4 Military Approval Levels 5 Performance Characteristics 5 T110/T212 CSR13 MIL-PRF-39003/1 Series Outline Drawing 6 Dimensions 6 Ordering & T110 Marking Information

transistor a564

Abstract: a564 transistor a684 transistor CIR 2262 transistor a684 cat 7199 ca transistor b564 5252 f 0917 capacitor 336 35K 102 CSR 6026
Contextual Info: INDEX Tantalum Hermetically Sealed/Axial Capacitors Military Ordering Information 4 Military Marking Information 4 Military Approval Levels 5 Performance Characteristics 5 T110/T212 CSR13 MIL-C-39003/1 Series Outline Drawing 6 Dimensions 6 Ordering & T110 Marking Information

106 16k

Abstract: capacitor 226 35K 022 electrolytic 335 35K TANTALUM capacitor 685 35K a564 transistor T35 diode transistor a564 B824 transistor a684 transistor XC 7270
Contextual Info: INDEX Tantalum Hermetically Sealed/Axial Capacitors Military Ordering Information 4 Military Marking Information 4 Military Approval Levels 5 Performance Characteristics 5 T110/T212 CSR13 MIL-PRF-39003/1 Series Outline Drawing 6 Dimensions 6 Ordering & T110 Marking Information

Contextual Info: SMT-Power-Induktivitäten SMT Power Inductors B82464-A4 Ungeschirmt B82464-A4 Unshielded Klimakategorie: Anschlüsse: Lötbarkeit: Beschriftung: Climatic category: Terminals: Solderability: Marking: Lieferform: VE: LR 2±0,2 10±0,2 Ansicht von unten Bottom view

Contextual Info: SIEMENS BBY53 Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage Type Marking Ordering Code BBY53 S7s Q62702-B824

Contextual Info: SMT Power Inductors SMT-Power-Induktivitäten 11 max. Marking 10.4 ref. 13.1 max. 2.3 ref. SMT power inductors B82559 h • Sizes: 13.1 x 11 x 4.95 mm ■ Baugrößen: 13.1 x 11 x 4.95 (mm) 13.1 x 11 x 5.95 (mm) ■ Core material: ferrite ■ Helically wound

marking a86

Contextual Info: MN18R1624 8 DF0 MP18R1624(8)DF0 Revision History Version 1.0 (May 2003) - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMMTM Module Datasheet. Version 1.1 (Aug. 2003) - Add PGA type 144MB NexMod Module. - Add the discription of index pin marking.

b72 voltage regulator

Abstract: marking A93 A75 marking code marking a86
Contextual Info: MN18R1624 8 DF0 MP18R1624(8)DF0 Revision History Version 1.0 (May 2003) - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMMTM Module Datasheet. Version 1.1 (Aug. 2003) - Add PGA type 144MB NexMod Module. - Add the discription of index pin marking.

Contextual Info: SMT Power Inductors SMT-Power-Induktivitäten 0. 1 1. 4± 2± 2. • Baugröße: 4.8 x 4.8 x 1.2 mm ■ Kernmaterial: Ferrit ■ RoHS-kompatibel (siehe Seite 112) Climatic category: 55/125/56 Terminals: Lead-free tinned Solderability: Reflow soldering Marking:

Contextual Info: Data Sheet Rev.1.4 24.11.2010 2GB DDR2 – SDRAM SO-DIMM Features: • 200 Pin SO-DIMM SEN02G64C4BH2MT-25R 2GB PC2-6400 in FBGA Technology RoHS compliant Options: • Data Rate / Latency DDR2 800 MHz CL6 DDR2 667 MHz CL5 DDR2 533 MHz CL4 Marking -25 -30 -37

Contextual Info: Data Sheet Rev.1.4 24.11.2010 2GB DDR2 – SDRAM SO-DIMM Features: • 200 Pin SO-DIMM SEN02G64C4BH2MT-25R 2GB PC2-6400 in FBGA Technology RoHS compliant Options: • Data Rate / Latency DDR2 800 MHz CL6 DDR2 667 MHz CL5 DDR2 533 MHz CL4 Marking -25 -30 -37

Contextual Info: B 41 303 B 43 303 Snap-in Capacitors GP Grade For universal applications Construction • • • • • • • Charge-discharge proof, polar Aluminum case, fully insulated Snap-in solder pins to hold component in place on PC-board Minus pole marking on case surface

B41303-A3109-M

Abstract: B43303-D227-M b933 h337 B5159
Contextual Info: Snap-In Capacitors 85 °C B 41 303 B 43 303 GP grade For universal application Construction ● ● ● ● ● ● Charge-discharge proof, polar Aluminum case, fully insulated Snap-in solder pins to hold component in place on PC-board Minus pole marking on case surface

B83 004

Abstract: marking a86 b72 voltage regulator
Contextual Info: MN18R162 4 8DF0 MP18R162(4)8DF0 Revision History Version 1.0 (May 2003) - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Datasheet. Version 1.1 (Aug. 2003) - Add PGA type 144MB NexMod. - Add the discription of index pin marking. - Correct the physical dimension of PGA NexMod.

Contextual Info: Data Sheet Rev.1.3 09.11.2010 2GB DDR2 – SDRAM SO-DIMM Features: • 200 Pin SO-DIMM SEN02G64C4BF2SA-25R 2GB PC2-6400 in FBGA Technology RoHS compliant Options: • Data Rate / Latency DDR2 800 MT/s CL6 DDR2 667 MT/s CL5 DDR2 533 MT/s CL4 Marking -25 -30

d687

Abstract: h337 a7338 C2227 transistor D227 EPCOS 1400 09 O B568 L2227M B41303-A7338-M equivalent j8338
Contextual Info: Snap-In Capacitors B 41 303 85 °C B 43 303 B 41 303, B 43 303 GP grade For universal application Construction • Charge-discharge proof, polar ■ Aluminum case, fully insulated ■ Snap-in solder pins to hold component in place on PC-board ■ Minus pole marking on case surface

BZX 48c 6v8

Abstract: PT2369 code Cj5 CMXZ11VTO 7006S
Contextual Info: M arking Codes Marking Code Part Number 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1RC 2AC 2B 2C 2C A 2F 2FC 2G 2 PC 2Q C 2P 3A 3AE 3B 3CE 3E 3F 3G 3J 3K 3L 3P 3SE 4A 4B 4C 4E 4F 4G 4P

B82462-G4682-M

Abstract: B82462 HP 8753
Contextual Info: SMT–Power–Inductors B82462–G4 PRELIMINARY DATA SHEET Size 6x6 mm Rated inductance 0,82 µH . 330 µH Construction Ferrite core Magnetically shielded Winding: enamel copper wire Winding welded to terminals Features Wide temperature range

HP 8753

Abstract: B82462-G4682-M A4 marking diode IEC 60068-1 a4 9 smt marking a4 A4102 B82462
Contextual Info: SMT–Power–Inductors B82462–A4 DATA SHEET Size 6x6 mm Rated inductance 1 µH . 1000 µH Construction Ferrite core Winding: enamel copper wire Winding welded to terminals Features Wide temperature range High rated current Low DC resistance Suitable for reflow soldering

SSB1227-Z

Abstract: B82432-T simid 1812-t
Contextual Info: SMT Inductors, SIMID Series B82432-T SIMID 1812-T Size 1812 EIA or 4532 (IEC) Rated inductance 1,0 to 1000 µH Rated current 60 to 1300 mA Construction • Ferrite core ■ Laser-welded winding, flame-retardant encapsulation Features ■ High current handling capability

B8249

Abstract: B82422-A1 epcos b82462-a4224k b82476a1104m B82471-A1223-M -EPCOS B82464A4474K B82432-T1473-K B82432-C1182-K B82462-A4334K B82432-T1684-K
Contextual Info: 10000 Seite Page 1000 100 10 10000 1000 100 10 IR mA 1,0 0,10 0,010 LR (µH) 0,001 Merkmale Features Gewickelt Wire-wound Baugröße Bauform Size Type Laser-cut SMT-Induktivitäten SMT Inductors 0402 SIMID 0402-A B82499-A Standard ● 9 Standard ● 10 0603

B82432-A1105

Abstract: B82432A1682 B82432A1564
Contextual Info: RF Chokes SIMID 03 Series B82432 SIMID 03 Siemens Miniature Inductors Rated inductance 1,0 to 1000 µH Rated current 0,055 to 0,6 A Construction ● ● ● ● Size as per EIA standard: 1812 Ferrite core Winding US-welded, flame-retardant encapsulation

Contextual Info: SMT–Power–Inductors B82471 DATA SHEET Rated inductance 10 µH . 220 µH Construction Ferrite core Winding: enamel copper wire Winding soldered to terminals Plastic terminal carrier Features High rated current Low DC resistance Suitable for reflow soldering IR and vapor phase

Contextual Info: SMT–Power–Inductors B82475 DATA SHEET Rated inductance 10 µH . 680 µH Construction Ferrite core Winding: enamel copper wire Winding soldered to terminals Plastic terminal carrier Features High rated current Low DC resistance Suitable for reflow soldering IR and vapor phase