MARKING BY2 Search Results

C5V6 ph

Abstract: C18 ph PH C5V1 philips diode PH 33D C8V2 PH C10 PH c4v7 ph c5v1ph c3v9ph C33PH
Contextual Info: MARKING CODES contents page Type number to marking code cross reference 2 Marking code to type number cross reference 21 Philips Semiconductors Small-signal and Medium-power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER

BY228ph

Abstract: BYV26E PH 1N5062 ph BY228 PH 1N4007 sod87 za109ts BYW95C PH BYR245 sj 1a0 SOD87 1N4007
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Power Diodes Supersedes data of 2004 Apr 27 2004 Jun 11 Philips Semiconductors Product specification Power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE PACKAGE TYPE NUMBER MARKING CODE PACKAGE

philips diode PH 33D

Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

PH 33D

Abstract: PH 33G BYW95C PH BYM26C PH BYV26E PH BYW96E PH BYV96E ph 33D-PH 33d ph V10-40
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Marking codes TYPE NUMBER TO MARKING CODE MARKING CODE PACKAGE BY558 BY558 PH SOD115 SOD57 BY578 BY578 PH SOD115 SOD57 BY584 orange SOD61A 1N4004 PH SOD57 BY614

BY228

Abstract: diode SOD 64 BYW56 SOD-64 BYW56 V SOD57 diode v
Contextual Info: Marking on Rectifiers Vishay Semiconductors Standard Avalanche Sinterglass Diode V V BY228 BYW56 17208 17207 SOD-57 SOD-64 Fig. 1 - Document Number: 84085 Rev. 1.0, 26-Feb-10 Fig. 2 - For technical questions, contact: DiodesSSP@Vishay.com www.vishay.com 1

BYW56V

Abstract: BYW56 v BYW56 BY228 by228 v DO-204AP VISHAY MARKING vishay rectifiers marking G3 marking G4
Contextual Info: VISHAY Vishay Semiconductors Marking on Rectifiers V BYW56 V BY228 17208 17207 SOD57 SOD64 Figure 1. V Figure 3. V RG1A 17217 DO-204AP G1 Figure 2. Document Number 84085 Rev. 7, 07-Jan-03 RG3A 17218 G3 Figure 4. www.vishay.com 1 VISHAY Vishay Semiconductors

DIODE BZG 03c

Abstract: DIODE BZX 85c marking code vishay label 1N4148 do214ac KZE sot23 Vishay diodes code marking 1N47A 1N5 diode 1N52B DIODE BZG
Contextual Info: Vishay Semiconductors Marking on Diodes V ÏÌÏ view from top Cathodering ÑÑ ÑÑÓ unwind ÌÌ ÌÌÏ Ï view from top Ó BZX ÑÑ Ó Cathodering V 414 8 BZX 55C 4V7 DO35 Type: 1N4148 ÏÌÏ view from top Cathodering Ó BAV ÑÑ ÑÑÓ unwind DO35 Type: BZX55C.

by228

Abstract: BY228 Diode
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BY228 Damper diode Product specification Supersedes data of May 1996 1996 Sep 26 Philips Semiconductors Product specification Damper diode BY228 FEATURES DESCRIPTION • Glass passivated Rugged glass package, using a high

BY255 diode

Abstract: by255 diode BY255 diode BY255 dc by255 dc BY255-TB BY2551 BY255-T3 RS-296-E
Contextual Info: BY255 WTE POWER SEMICONDUCTORS Pb 3.0A HIGH VOLTAGE STANDARD DIODE Features !" Diffused Junction !" !" !" !" Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data C !" Case: DO-201AD, Molded Plastic

Contextual Info: BY255 WTE POWER SEMICONDUCTORS Pb 3.0A HIGH VOLTAGE STANDARD DIODE Features  Diffused Junction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data C  Case: DO-201AD, Molded Plastic

Contextual Info: BY255 3.0A HIGH VOLTAGE STANDARD DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability B A A Mechanical Data       

diode sy 160

Contextual Info: Philips Semiconductors Short-form product specification Parallel efficiency diode FEATU RES BY228 Q U IC K R E F E R E N C E DATA • High reverse voltage capability with controlled recovery time. APPLICATIO N S • Efficiency diode in transistorized horizontal deflection circuits of

Contextual Info: DIGITRON SEMICONDUCTORS BY228 STANDARD RECOVERY RECTIFIER MAXIMUM RATINGS Tamb = 25°C unless otherwise specified Parameter Test condition Symbol Value VR 1500 V IR = 100µA VRRM 1650 V tp = 10ms, half sinewave IFSM 50 A Reverse voltage Repetitive peak reverse voltage

BY268

Abstract: BY269
Contextual Info: BY268 / BY269 0.8A FAST RECOVERY HIGH VOLTAGE GLASS BODY RECTIFIER Features • · · Hermetically Sealed Glass Body Construction High Voltage to 1800V with Low Leakage Surge Overload Rating to 20A Peak A A B C D Mechanical Data · · · · · · SOD-57 Case: SOD-57, Glass

Marking STMicroelectronics

Abstract: BY239L-800 stmicroelectronics
Contextual Info: BY239L-800 RECTIFIER DIODES MAIN PRODUCTS CHARACTERISTICS IF av 10 A VRRM 800 V VF (max) 1.45 V A K STANDARD RECTIFIER HIGH SURGE CURRENT CAPABILITY LOW FORWARD VOLTAGE DROP TO220AC (Plastic) ABSOLUTE MAXIMUM RATINGS (limiting values) Symbol IF(AV) Parameter

BY239L-800

Abstract: stmicroelectronics
Contextual Info: BY239L-800  RECTIFIER DIODES MAIN PRODUCTS CHARACTERISTICS IF av 10 A VRRM 800 V VF (max) 1.45 V A K STANDARD RECTIFIER HIGH SURGE CURRENT CAPABILITY LOW FORWARD VOLTAGE DROP TO220AC (Plastic) ABSOLUTE MAXIMUM RATINGS (limiting values) Symbol IF(AV) Parameter

BY214

Abstract: Marking STMicroelectronics BY214-400 by214400 BY214-600
Contextual Info: BY214-400 ->1000  RECTIFIER DIODES MAIN PRODUCTS CHARACTERISTICS IF av 6A VRRM 1000 V VF (max) 1.2 V STANDARD RECTIFIER HIGH SURGE CURRENT CAPABILITY LOW FORWARD VOLTAGE DROP AG (Plastic) ABSOLUTE RATINGS (limiting values) Symbol IF(AV) Parameter Average forward current *

BY254

Contextual Info: BY251 - BY254 Pb 3.0 AMPS. Silicon Rectifiers DO-201AD RoHS COMPLIANCE Features High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix "G" on packing code & prefix "G" on datecode

Contextual Info: BY251 - BY254 Pb 3.0 AMPS. Silicon Rectifiers DO-201AD RoHS COMPLIANCE Features High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix "G" on packing code & prefix "G" on datecode

Contextual Info: BY239L-800 _ RECTIFIER DIODES MAIN PRODUCTS CHARACTERISTICS lF av 10 A V rrm 800 V V f (max) 1.45 V • STANDARD RECTIFIER ■ HIGH SURGE CURRENT CAPABILITY ■ LOW FORWARD VOLTAGE DROP ABSOLUTE MAXIMUM RATINGS (limiting values)

BY228

Abstract: SOD-64
Contextual Info: BY228 PARALLEL EFFICIENCY DIODE Double-diffused passivated rectifier diode in an hermetically sealed axial-leaded glass envelope, intended for use as efficiency diode in transistorized horizontal deflection circuits of television receivers. The device features high reverse voltage capability with controlled recovery time.

Contextual Info: TAIWAN SEMICONDUCTOR s BY251 - BY255 3.0 AMPS. Silicon Rectifiers RoHS DO-201 AD C O M P L IA N C E T — -. 197 IÎA . Features_ •fr ❖ ❖ <■ <• ❖ High efficiency, Low VF High current capability High reliability

BY228

Abstract: modulator circuit
Contextual Info: N AMER PHI LIP S/ DI S CR ET E b^E D • bbSB'iBl GÜ2fai*Sfl ÖOS ■ APX BY228 Jl PARALLEL EFFICIENCY DIODE Double-diffused passivated rectifier diode in an hermetically sealed axial-leaded glass envelope, intended fo r use as efficiency diode in transistorized horizontal deflection circuits o f television