MARKING C2 SOT23 Search Results

BCW30

Abstract: C212
Contextual Info: SEMICONDUCTOR BCW30 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 C2 1 2 Item Marking Description Device Mark C2 BCW30 hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

FMMT3903

Abstract: BCV71 BCV72 BCW29 BCW30 BCW31 BCW32 BCW33 BFQ31 BFQ31A
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS Device Type Standard marking BCV71 K7 BCV72 K8 BCW29 C1 C2 BCW30 BCW31 TRANSISTORS Reverse Joggle m arking Device Type K6 K9 C4 Standard marking Reverse Joggle marking BFQ31 S2 S3

Contextual Info: SMBD7000/ MMBD7000 Silicon Switching Diode Array 3
For high-speed switching applications
Connected in series 2 1 VPS05161 3 1 2 EHA07005 Type Marking SMBD7000/ MMBD7000 s5C 1 = A1 Pin Configuration 2 = C2 3=C1/A2 Package SOT23 Maximum Ratings Parameter

BAW56 application note

Abstract: A1s sot23 BAW56 V6010 ta1504 A2 SOT23
Contextual Info: BAW56 Silicon Switching Diode Array 3
For high-speed switching applications
Common anode 2 1 VPS05161 3 1 2 EHA07006 Type Marking BAW56 A1s Pin Configuration 1 = C1 2 = C2 Package 3=A1/A2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR

a1 sot23

Abstract: BGX400
Contextual Info: BGX400 Silicon Switching Diodes 3
Switching applications
High breakdown voltage
Halfbridge rectifier 2 1 1 3 VPS05161 2 EHA07365 Type Marking BGX400 GXs Pin Configuration 1=C1/A2 2=C2 Package 3=A1 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage

Contextual Info: SMBD7000 Silicon Switching Diode Array 3
For high-speed switching applications
Connected in series 2 1 VPS05161 3 1 2 EHA07005 Type Marking SMBD7000 s5C Pin Configuration 1 = A1 2 = C2 Package 3=C1/A2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage

BAV99

Abstract: free pdf transistor a7s bav99 marking diode bav A2 SOT23
Contextual Info: BAV99 Silicon Switching Diode Array 3
For high-speed switching applications
Connected in series 2 1 VPS05161 3 1 2 EHA07005 Type Marking BAV99 A7s Pin Configuration 1 = A1 2 = C2 Package 3=C1/A2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage

BAV199

Abstract: marking jys jys diode
Contextual Info: BAV199 3 Silicon Low Leakage Diode Array
Low-leakage applications
Medium speed switching times 2
Connected in series 1 VPS05161 3 1 2 EHA07005 Type BAV199 Marking JYs Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SOT23 Maximum Ratings Parameter Symbol

BAR66

Abstract: Q62702-A1473
Contextual Info: BAR66 Silicon PIN Diode Array l l l Surge protection device Two PIN diodes, series configuration Designed for surge overvoltage clamping in antiparallel connection Type Marking BAR66 PMs Ordering Code taped Pin Configuration 1 2 A1 C2 Q62702-A1473 Package

transistors marking HJ

Abstract: marking c2 BCW30
Contextual Info: BCW30 SMALL SIGNAL PNP TRANSISTORS • ■ ■ Type Marking BCW 30 C2 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW LEVEL AUDIO AMPLIFICATION AND SWITCHING 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM

BAW156

Contextual Info: BAW156 3 Silicon Low Leakage Diode Array
Low-leakage applications
Medium speed switching times 2
Common anode 1 VPS05161 3 1 2 EHA07006 Type BAW156 Marking JZs Pin Configuration 1 = C1 2 = C2 3 = A1/2 Package SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage

BAR66

Contextual Info: BAR66 Silicon PIN Diode Array 3
Surge protection device
Two PIN diodes, series configuration
Designed for surge overvoltage clamping in antiparallel connection 2 1 VPS05161 3 1 2 EHA07005 Type Marking BAR66 PMs Pin Configuration 1 = A1 2 = C2 Package

Contextual Info: BAR 66 Silicon PIN Diode Array 3
Surge protection device
Two PIN diodes, series configuration
Designed for surge overvoltage clamping in antiparallel connection 2 1 VPS05161 3 1 2 EHA07005 Type Marking BAR 66 PMs Pin Configuration 1 = A1 2 = C2 Package

marking C1

Abstract: BCW 90
Contextual Info: BCW29 BCW30 SMALL SIGNAL PNP TRANSISTORS • ■ ■ Type Marking BCW 29 C1 BCW 30 C2 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW LEVEL AUDIO AMPLIFICATION AND SWITCHING 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM

BAW56

Abstract: SOT-23 marking a1s BAW 56
Contextual Info: BAW 56 Silicon Switching Diode Array 3 • For high-speed switching applications • Common anode 2 1 VPS05161 3 1 2 EHA07006 Type Marking BAW 56 A1s Pin Configuration 1 = C1 2 = C2 Package 3=A1/A2 SOT-23 Maximum Ratings Parameter Symbol Diode reverse voltage

Contextual Info: BGX 400 Silicon Switching Diodes Preliminary data 3
Switching applications
High breakdown voltage
Halfbridge rectifier 2 1 VPS05161 1 3 2 EHA07365 Type Marking BGX 400 GXs Pin Configuration 1=C1/A2 2=C2 Package 3=A1 SOT-23 Maximum Ratings Parameter Symbol

a1 sot-23

Contextual Info: BGX 400 Silicon Switching Diodes 3
Switching applications
High breakdown voltage
Halfbridge rectifier 2 1 1 3 VPS05161 2 EHA07365 Type Marking BGX 400 GXs Pin Configuration 1=C1/A2 2=C2 Package 3=A1 SOT-23 Maximum Ratings Parameter Symbol Diode reverse voltage

baw156

Contextual Info: BAW 156 Silicon Low Leakage Diode Array 3 • Low-leakage applications • Medium speed switching times • Common anode 2 1 VPS05161 3 1 2 EHA07006 Type Marking BAW 156 JZs Pin Configuration 1 = C1 2 = C2 Package 3 = A1/2 SOT-23 Maximum Ratings Parameter

BAV 199 SOT23

Abstract: BAV199 P 101 Series
Contextual Info: BAV 199 Silicon Low Leakage Diode Array 3 • Low-leakage applications • Medium speed switching times • Connected in series 2 1 VPS05161 3 1 2 EHA07005 Type Marking BAV 199 JYs Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SOT-23 Maximum Ratings Parameter

BAV99

Abstract: SOT23 bav 99
Contextual Info: BAV 99 Silicon Switching Diode Array 3 • For high-speed switching applications • Connected in series 2 1 VPS05161 3 1 2 EHA07005 Type Marking BAV 99 A7s Pin Configuration 1 = A1 2 = C2 Package 3=C1/A2 SOT-23 Maximum Ratings Parameter Symbol Diode reverse voltage

Contextual Info: SMBD 7000 Silicon Switching Diode Array 3 • For high-speed switching applications • Connected in series 2 1 VPS05161 3 1 2 EHA07005 Type Marking SMBD 7000 s5C Pin Configuration 1 = A1 2 = C2 Package 3=C1/A2 SOT-23 Maximum Ratings Parameter Symbol Diode reverse voltage

marking C1

Abstract: TMPTA70 TMPT5401 h2t1
Contextual Info: PNP TRANSISTORS SOT-23/TO-236AB ELECTRICAL CHARACTERISTICS at T. = 25°C V BF CBO v (BR)CEO V(BR)EBO Max. @ v CB Device hFE We «T @ lc @ v CE Max. @ lc Marking (V) (V) (V) (nA) BCW29 C1 303 32 5.0 100 20 120 260 2.0 BCW30 C2 3ID3 32 5.0 100 20 215 500 2.0

C2 marking code

Contextual Info: Si2312DS New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.033 @ VGS = 4.5 V 4.9 0.040 @ VGS = 2.5 V 4.4 0.051 @ VGS = 1.8 V 3.9 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2312DS (C2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: Si2312DS New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.033 @ VGS = 4.5 V 4.9 0.040 @ VGS = 2.5 V 4.4 0.051 @ VGS = 1.8 V 3.9 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2312DS (C2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)