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    MARKING C2 SOT23 Search Results

    MARKING C2 SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy

    MARKING C2 SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BCW30

    Abstract: C212
    Text: SEMICONDUCTOR BCW30 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 C2 1 2 Item Marking Description Device Mark C2 BCW30 hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


    Original     		PDF BCW30 OT-23 BCW30 C212

    Untitled

    Abstract: No abstract text available
    Text: SMBD7000/ MMBD7000 Silicon Switching Diode Array 3  For high-speed switching applications  Connected in series 2 1 VPS05161 3 1 2 EHA07005 Type Marking SMBD7000/ MMBD7000 s5C 1 = A1 Pin Configuration 2 = C2 3=C1/A2 Package SOT23 Maximum Ratings Parameter


    Original     		PDF SMBD7000/ MMBD7000 VPS05161 EHA07005 MMBD7000 EHB00137 EHB00138 Feb-18-2002

    BAW56 application note

    Abstract: A1s sot23 BAW56 V6010 ta1504 A2 SOT23
    Text: BAW56 Silicon Switching Diode Array 3  For high-speed switching applications  Common anode 2 1 VPS05161 3 1 2 EHA07006 Type Marking BAW56 A1s Pin Configuration 1 = C1 2 = C2 Package 3=A1/A2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR


    Original     		PDF BAW56 VPS05161 EHA07006 EHB00091 EHB00092 Jul-31-2001 EHB00093 BAW56 application note A1s sot23 BAW56 V6010 ta1504 A2 SOT23

    a1 sot23

    Abstract: BGX400
    Text: BGX400 Silicon Switching Diodes 3  Switching applications  High breakdown voltage  Halfbridge rectifier 2 1 1 3 VPS05161 2 EHA07365 Type Marking BGX400 GXs Pin Configuration 1=C1/A2 2=C2 Package 3=A1 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage


    Original     		PDF BGX400 VPS05161 EHA07365 Aug-20-2001 a1 sot23 BGX400

    Untitled

    Abstract: No abstract text available
    Text: SMBD7000 Silicon Switching Diode Array 3  For high-speed switching applications  Connected in series 2 1 VPS05161 3 1 2 EHA07005 Type Marking SMBD7000 s5C Pin Configuration 1 = A1 2 = C2 Package 3=C1/A2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage


    Original     		PDF SMBD7000 EHA07005 VPS05161 Jul-31-2001 EHB00137 EHB00138

    BAV99

    Abstract: free pdf transistor a7s bav99 marking diode bav A2 SOT23
    Text: BAV99 Silicon Switching Diode Array 3  For high-speed switching applications  Connected in series 2 1 VPS05161 3 1 2 EHA07005 Type Marking BAV99 A7s Pin Configuration 1 = A1 2 = C2 Package 3=C1/A2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage


    Original     		PDF BAV99 VPS05161 EHA07005 EHB00076 EHB00077 Jul-30-2001 EHB00078 BAV99 free pdf transistor a7s bav99 marking diode bav A2 SOT23

    BAV199

    Abstract: marking jys jys diode
    Text: BAV199 3 Silicon Low Leakage Diode Array  Low-leakage applications  Medium speed switching times 2  Connected in series 1 VPS05161 3 1 2 EHA07005 Type BAV199 Marking JYs Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SOT23 Maximum Ratings Parameter Symbol


    Original     		PDF BAV199 VPS05161 EHA07005 EHB00086 Aug-20-2001 EHB00087 BAV199 marking jys jys diode

    BAR66

    Abstract: Q62702-A1473
    Text: BAR66 Silicon PIN Diode Array l l l Surge protection device Two PIN diodes, series configuration Designed for surge overvoltage clamping in antiparallel connection Type Marking BAR66 PMs Ordering Code taped Pin Configuration 1 2 A1 C2 Q62702-A1473 Package


    Original     		PDF BAR66 Q62702-A1473 OT-23 BAR66 Q62702-A1473

    transistors marking HJ

    Abstract: marking c2 BCW30
    Text: BCW30 SMALL SIGNAL PNP TRANSISTORS • ■ ■ Type Marking BCW 30 C2 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW LEVEL AUDIO AMPLIFICATION AND SWITCHING 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM


    Original     		PDF BCW30 OT-23 transistors marking HJ marking c2 BCW30

    BAW156

    Abstract: No abstract text available
    Text: BAW156 3 Silicon Low Leakage Diode Array  Low-leakage applications  Medium speed switching times 2  Common anode 1 VPS05161 3 1 2 EHA07006 Type BAW156 Marking JZs Pin Configuration 1 = C1 2 = C2 3 = A1/2 Package SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage


    Original     		PDF BAW156 VPS05161 EHA07006 EHB00107 Aug-20-2001 EHB00108 BAW156

    BAR66

    Abstract: No abstract text available
    Text: BAR66 Silicon PIN Diode Array 3  Surge protection device  Two PIN diodes, series configuration  Designed for surge overvoltage clamping in antiparallel connection 2 1 VPS05161 3 1 2 EHA07005 Type Marking BAR66 PMs Pin Configuration 1 = A1 2 = C2 Package


    Original     		PDF BAR66 VPS05161 EHA07005 Aug-24-2001 BAR66

    Untitled

    Abstract: No abstract text available
    Text: BAR 66 Silicon PIN Diode Array 3  Surge protection device  Two PIN diodes, series configuration  Designed for surge overvoltage clamping in antiparallel connection 2 1 VPS05161 3 1 2 EHA07005 Type Marking BAR 66 PMs Pin Configuration 1 = A1 2 = C2 Package


    Original     		PDF VPS05161 EHA07005 OT-23 Feb-03-2000

    marking C1

    Abstract: BCW 90
    Text: BCW29 BCW30 SMALL SIGNAL PNP TRANSISTORS • ■ ■ Type Marking BCW 29 C1 BCW 30 C2 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW LEVEL AUDIO AMPLIFICATION AND SWITCHING 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM


    Original     		PDF BCW29 BCW30 OT-23 marking C1 BCW 90

    b631 transistor

    Abstract: S3 marking DIODE b631 Q62702-B631
    Text: BBY 51 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Type Marking Ordering Code Pin Configuration BBY 51 S3 1=A Q62702-B631 Package 2=A 3 = C1/C2 SOT-23


    Original     		PDF Q62702-B631 OT-23 Jan-09-1997 b631 transistor S3 marking DIODE b631 Q62702-B631

    Untitled

    Abstract: No abstract text available
    Text: BGX 400 Silicon Switching Diodes Preliminary data 3  Switching applications  High breakdown voltage  Halfbridge rectifier 2 1 VPS05161 1 3 2 EHA07365 Type Marking BGX 400 GXs Pin Configuration 1=C1/A2 2=C2 Package 3=A1 SOT-23 Maximum Ratings Parameter Symbol


    Original     		PDF VPS05161 EHA07365 OT-23 Oct-26-1999

    a1 sot-23

    Abstract: No abstract text available
    Text: BGX 400 Silicon Switching Diodes 3  Switching applications  High breakdown voltage  Halfbridge rectifier 2 1 1 3 VPS05161 2 EHA07365 Type Marking BGX 400 GXs Pin Configuration 1=C1/A2 2=C2 Package 3=A1 SOT-23 Maximum Ratings Parameter Symbol Diode reverse voltage


    Original     		PDF VPS05161 EHA07365 OT-23 Nov-16-2000 a1 sot-23

    baw156

    Abstract: No abstract text available
    Text: BAW 156 Silicon Low Leakage Diode Array 3 • Low-leakage applications • Medium speed switching times • Common anode 2 1 VPS05161 3 1 2 EHA07006 Type Marking BAW 156 JZs Pin Configuration 1 = C1 2 = C2 Package 3 = A1/2 SOT-23 Maximum Ratings Parameter


    Original     		PDF VPS05161 EHA07006 OT-23 EHB00107 EHB00108 Oct-08-1999 EHB00109 baw156

    BAV 199 SOT23

    Abstract: BAV199 P 101 Series
    Text: BAV 199 Silicon Low Leakage Diode Array 3 • Low-leakage applications • Medium speed switching times • Connected in series 2 1 VPS05161 3 1 2 EHA07005 Type Marking BAV 199 JYs Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SOT-23 Maximum Ratings Parameter


    Original     		PDF VPS05161 EHA07005 OT-23 EHB00086 EHB00087 Oct-12-1999 EHB00088 BAV 199 SOT23 BAV199 P 101 Series

    BAV99

    Abstract: SOT23 bav 99
    Text: BAV 99 Silicon Switching Diode Array 3 • For high-speed switching applications • Connected in series 2 1 VPS05161 3 1 2 EHA07005 Type Marking BAV 99 A7s Pin Configuration 1 = A1 2 = C2 Package 3=C1/A2 SOT-23 Maximum Ratings Parameter Symbol Diode reverse voltage


    Original     		PDF VPS05161 EHA07005 OT-23 EHB00076 EHB00077 Oct-08-1999 EHB00078 BAV99 SOT23 bav 99

    Untitled

    Abstract: No abstract text available
    Text: SMBD 7000 Silicon Switching Diode Array 3 • For high-speed switching applications • Connected in series 2 1 VPS05161 3 1 2 EHA07005 Type Marking SMBD 7000 s5C Pin Configuration 1 = A1 2 = C2 Package 3=C1/A2 SOT-23 Maximum Ratings Parameter Symbol Diode reverse voltage


    Original     		PDF VPS05161 EHA07005 OT-23 EHB00137 EHB00138 Oct-14-1999 EHB00139

    C2 marking code

    Abstract: No abstract text available
    Text: Si2312DS New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.033 @ VGS = 4.5 V 4.9 0.040 @ VGS = 2.5 V 4.4 0.051 @ VGS = 1.8 V 3.9 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2312DS (C2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si2312DS O-236 OT-23) S-21090--Rev. 01-Jun-02 C2 marking code

    Untitled

    Abstract: No abstract text available
    Text: Si2312DS New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.033 @ VGS = 4.5 V 4.9 0.040 @ VGS = 2.5 V 4.4 0.051 @ VGS = 1.8 V 3.9 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2312DS (C2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si2312DS O-236 OT-23) S-03082--Rev. 12-Feb-01

    FMMT3903

    Abstract: BCV71 BCV72 BCW29 BCW30 BCW31 BCW32 BCW33 BFQ31 BFQ31A
    Text: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS Device Type Standard marking BCV71 K7 BCV72 K8 BCW29 C1 C2 BCW30 BCW31 TRANSISTORS Reverse Joggle m arking Device Type K6 K9 C4 Standard marking Reverse Joggle marking BFQ31 S2 S3


    OCR Scan     		PDF OT-23 BCV71 BFQ31 BCV72 BFQ31A BCW29 BFS20 BCW30 BCW31 BCW32 FMMT3903 BCW33

    marking C1

    Abstract: TMPTA70 TMPT5401 h2t1
    Text: PNP TRANSISTORS SOT-23/TO-236AB ELECTRICAL CHARACTERISTICS at T. = 25°C V BF CBO v (BR)CEO V(BR)EBO Max. @ v CB Device hFE We «T @ lc @ v CE Max. @ lc Marking (V) (V) (V) (nA) BCW29 C1 303 32 5.0 100 20 120 260 2.0 BCW30 C2 3ID3 32 5.0 100 20 215 500 2.0


    OCR Scan     		PDF OT-23/TO-236AB BCW29 BCW30 BCW61A BCW61B BCW61C BCW61D BCW67A BCW67B BCW68F marking C1 TMPTA70 TMPT5401 h2t1