MARKING C6 SOT23 Search Results

Contextual Info: DSC2G03 Silicon NPN epitaxial planar type Unit: mm For high-frequency amplification • Features  High transition frequency fT  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant  Marking Symbol: C6  Packaging DSC2G03x0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)

KV1410

Contextual Info: KV1410 VARIABLE CAPACITANCE DIODE FEATURES APPLICATIONS • Excellent Linearity CV Curve ■ Large Capacitance Ratio (A = 2.00 minimum) with Very Low Series Resistance ■ Two Diodes in a Miniature Package (SOT23-3) ■ Very Small Capacitance Deviation at Tape/Reel

C3 DIODE

Abstract: C3 SOT23-3 KV1400
Contextual Info: KV1400 VARIABLE CAPACITANCE DIODE FEATURES APPLICATIONS • Excellent Linearity CV Curve ■ Large Capacitance Ratio (A = 2.10 minimum) with Very Low Series Resistance ■ Two Diodes in a Miniature Package (SOT23-3) ■ Very Small Capacitance Deviation at Tape/Reel

CV 203

Abstract: marking code C9 F3 SOT23-3
Contextual Info: KV1430 VARIABLE CAPACITANCE DIODE FEATURES APPLICATIONS • Excellent Linearity CV Curve ■ Large Capacitance Ratio (A = 3.70 minimum) with Very Low Series Resistance ■ Two Diodes in a Miniature Package (SOT23-3) ■ Very Small Capacitance Deviation at Tape/Reel

marking code C9

Abstract: CV 203 KV1450
Contextual Info: KV1450 VARIABLE CAPACITANCE DIODE FEATURES APPLICATIONS • ■ ■ ■ ■ ■ FM Radio ■ Voltage Controlled Oscillator Very Low Series Resistance Excellent Linearity CV Curve Large Capacitance Ratio (A1 = 4.60 minimum) Two Diodes in a Miniature Package (SOT23-3)

igbt welding machine scheme

Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
Contextual Info: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and

Contextual Info: AIC1896 1.4MHz SOT23 Current-Mode Step-Up DC/DC Converter FEATURES DESCRIPTION Fixed Frequency 1.4MHz Current-Mode PWM AIC1896 is a current-mode pulse-width modulation Operation. PWM , step-up DC/DC Converter. The built-in high Adjustable Output Voltage up to 30V.

KV1450

Abstract: F5 MARK
Contextual Info: KV1450 VARIABLE CAPACITANCE DIODE FEATURES APPLICATIONS • ■ ■ ■ ■ ■ FM Radio ■ Voltage Controlled Oscillator Very Low Series Resistance Excellent Linearity CV Curve Large Capacitance Ratio (A1 = 4.60 minimum) Two Diodes in a Miniature Package (SOT23-3)

marking L2 SOT23 6

Abstract: RF1 SOT-23 MARKING C6 SOT23 SMP1345-079LF SK4025 C7L3 Marking C6 SOT23-5 MARKING 518
Contextual Info: DATA SHEET SMP1345 Series: Very Low Capacitance, Plastic Packaged Silicon PIN Diodes Features Designed for high-isolation LNB, WLAN and wireless switch applications ● Very low insertion loss 0.4 dB ● 0.15 pF capacitance ● Available lead (Pb)-free and RoHS-compliant MSL-1 @ 250 °C per

CL01 DIODE

Contextual Info: ETR0329-002 •GENERAL DESCRIPTION XC6218 series are highly precise, low noise, positive voltage LDO regulators manufactured using CMOS processes. The series achieves very low supply current, 1.0 A TYP. and consists of a reference voltage source, an error amplifier,

marking W26 sot23

Abstract: SOT23-5 marking 016 sot23 w32 Marking c9 SOT23-5 W32 MARKING SOT23-6 MARKING b4 sot89-5 PAD Marking P35 sot89 SOT23-5 MARKING g5 Marking code 33 29 SOT89
Contextual Info: PACKAGE OUTLINES Linear ICs SURFACE MOUNT PACKAGES SOT23-3 SOT-23 0.7 1.0 3 e1 2.4 Marking e 0.95 e 0.95 e1 1.90 Recommended Mounting Pad + 0.1 0.4 0.95 2 1.6 0.1 1.1 0 - 0.1 1.4 max (0.3) 2.9 max. e 15 0.95 (0.4) 0.15 e + 0.1 1 C1 0.1 + 0.3 2.8 Dimensions are shown in millimeters

MRF18060A

Abstract: smd transistor marking z3 archive smd transistor marking j2 smd transistor marking z1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF18060A-1 Rev. 10, 10/2008 RF Power Field Effect Transistor MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

TLX8-0300

Abstract: transistor J585
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF18090A Rev. 8, 10/2008 RF Power Field Effect Transistor MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF18090A Rev. 8, 10/2008 RF Power Field Effect Transistor MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

si3054

Abstract: Si3052 Si3019 Application Note MIL-C-8 rj11 pcb mount ON MARKING R59 sot89 RJ11 4/4 connector RJ11 diagram Si3019 AN67
Contextual Info: AN67 Si3050/52/54/56 L A Y O U T G U I D E L I N E S Description The Si305x chipsets improve upon Silicon Laboratories’ groundbreaking family of silicon direct access arrangement DAA products by providing the highest integration, lowest cost, and smallest area DAA solution

KV1735STL-G

Abstract: KV1735RTL-G KV1735
Contextual Info: KV1735 9V Series VCD for FM Tuning 9V系FM用VCD Feature „ Included Twin Element „ ツインタイプ素子1組内蔵 „ Very Small Tolerance of Element Being Next Device To Each Other „ 小さい隣接デバイス間容量偏差 „ Excellent Linearity of the C-V Curve

KV1735STL-G

Abstract: top marking 7485
Contextual Info: KV1735 9V Series VCD for FM Tuning 9V系FM用VCD Feature „ Included Twin Element „ ツインタイプ素子1組内蔵 „ Very Small Tolerance of Element Being Next Device To Each Other „ 小さい隣接デバイス間容量偏差 „ Excellent Linearity of the C-V Curve

Contextual Info: TKV1750A 9V Series VCD for FM Tuning 9V系FM用VCD Feature „ Included Twin Element „ ツインタイプ素子1組内蔵 „ Very Small Tolerance of Element Being Next Device To Each Other „ 小さい隣接デバイス間容量偏差 „ Excellent Linearity of the C-V Curve

transistor 131

Abstract: MRF18060ALR3 transistor Z6 MRF18060A
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF18060A Rev. 9, 5/2006 RF Power Field Effect Transistors MRF18060ALR3 MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

marking WB1 sot-23

Abstract: marking WB2 sot-23 MARKING J3 SOT-23 CRCW08051001FKEA wb1 sot-23 ATC100B220GT500XT WB1 SOT23 22 pf capacitor datasheet ATC100B220GT500X MARKING WB1
Contextual Info: Document Number: MRF9080 Rev. 8, 10/2008 Freescale Semiconductor Technical Data LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF9080LR3 LIFETIME BUY Designed for GSM 900 MHz frequency band, the high gain and broadband

marking WB1 sot-23

Abstract: marking WB2 sot-23 transistor WB1
Contextual Info: Document Number: MRF9080 Rev. 7, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9080LSR3 Designed for GSM 900 MHz frequency band, the high gain and broadband performance of this device make it ideal for large-signal, common-source

diode RU3

Abstract: SMP1345 SMP1345-003 SMP1345-004 SMP1345-005 SMP1345-518 marking c7 sot-23 SK402
Contextual Info: DATA SHEET SMP1345 Series: Very Low Capacitance Plastic Packaged Silicon PIN Diodes Features Designed for high isolation LNB, WLAN and wireless switch applications ● Very low insertion loss 0.4 dB ● 0.15 pF capacitance ● Available lead (Pb)-free MSL-1 @ 250 °C per JEDEC J-STD-020

NIPPON CAPACITORS

Abstract: Transistor J438 CRCW08051001FKEA MRF21010
Contextual Info: Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF21010LSR1 N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

CRCW08051001FKEA

Abstract: TLX8-0300 C-XM-99-001-01 pd cms NIPPON CAPACITORS bourns 3224w FM LDMOS freescale transistor atc100B100GT500XT marking us capacitor pf l1 MRF21010
Contextual Info: Document Number: MRF21010-2 Rev. 11, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor NOT RECOMMENDED FOR NEW DESIGN Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier