MARKING C8 AMPLIFIER Search Results

RFMD RF2048

Contextual Info: RF2048 GENERAL PURPOSE AMPLIFIER NOT FOR NEW DESIGNS RoHS Compliant & Pb-Free Product Package Style: Micro-X Ceramic Features „ „ „ „ MARKING - C8 SI GN S „ DC to 8000MHz Operation Internally matched Input and Output 12dB Small Signal Gain +25dBm Output IP3

transistor 56B marking

Abstract: BC857B PNP marking c8 transistor
Contextual Info: BC856,BC857,BC858,BC859 SERIES PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 30/45/65 Volts CURRENT 330 mWatts 0.006 0.15 MIN. FEATURES 0.120(3.04) • General Purpose Amplifier Applications 0.110(2.80) • Collector Current IC = -100mA • Complimentary (PNP) Devices : BC846/BC847/BC848/BC849

transistor 56B marking

Abstract: marking c8 transistor MARKING C8 MARKING bc847 SOT-23
Contextual Info: BC856,BC857,BC858,BC859 SERIES PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 30/45/65 Volts POWER 330 mWatts 0.006 0.15 MIN. FEATURES 0.120(3.04) • General Purpose Amplifier Applications 0.110(2.80) • Collector Current IC = -100mA • Complimentary (PNP) Devices : BC846/BC847/BC848/BC849

Contextual Info: BC856,BC857,BC858,BC859 SERIES PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 30/45/65 Volts POWER 330 mWatts SOT-23 Unit inch mm FEATURES • General Purpose Amplifier Applications 0.120(3.04) 0.110(2.80) • Collector Current IC = -100mA • Complimentary (PNP) Devices : BC846/BC847/BC848/BC849

c858

Abstract: BC856R
Contextual Info: BC856,BC857,BC858,BC859 SERIES PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 30/45/65 Volts POWER 330 mWatts SOT-23 Unit：inch mm FEATURES • General Purpose Amplifier Applications 0.120(3.04) 0.110(2.80) • Collector Current IC = -100mA • Complimentary (PNP) Devices : BC846/BC847/BC848/BC849

smd transistor marking z3

Abstract: smd transistor marking j6 J585 mosfet smd transistor marking z8 smd transistor z4 smd transistor marking mf capacitor philips Z9 TRANSISTOR SMD J216 transistor 6 pin SMD Z2
Contextual Info: Freescale Semiconductor Technical Data Rev. 6, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

SMD Transistor z6

Abstract: transistor SMD Z2 Transistor smd Z3 J344 smd transistor marking z3 transistor 6 pin SMD Z2 MOSFET marking Z5 transistor Z6 SMD z6 SMD TRANSISTOR MARKING Z2
Contextual Info: Freescale Semiconductor Technical Data Rev. 6, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

j511

Contextual Info: TQM879028 0.7−4.0 GHz ½ W Digital Variable Gain Amplifier Applications • 3G / 4G Wireless Infrastructure • Repeaters • LTE / WCDMA / CDMA 24 Pin 4 x 4 mm Leadless SMT Package Product Features NC DSA Out NC NC Amp2 In NC 23 22 21 20 19 NC 1 18

C3 1.2AGHZ

Contextual Info: TAT8804D1H 21 dB CATV 12V Power Doubler Applications HFC Nodes CATV Line Amplifiers Head End Equipment 50 to 1000 MHz 75 Ohm Amplifier 40 Pin 5x7 mm QFN Package 26 24 23 22 21 GND 33 20 GND VDD 34 19 VDD VDD 35 GND 36 GND BIAS BIAS 18 VDD 17 GND 37 16 GND

0805 capacitor 10 pf

Contextual Info: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 26 volt base station equipment.

Contextual Info: TA4500F TOSHIBA Bipolar Linear Integrated Circuit SiGe Monolithic TA4500F 1.9 GHz Band RX Front-End IC PHS, Digital Cordless Telecommunication Applications Features • Low-noise amplifier / down-conversion mixer • Integrated local buffer amplifier • Single positive power supply: VCC = 3.0 V

10ACPR

Contextual Info: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

Contextual Info: TQM879026 0.7-4 GHz ¼W Digital Variable Gain Amplifier Applications • 3G / 4G Wireless Infrastructure • Repeaters • LTE / WCDMA / CDMA 24 Pin 4x4 mm leadless SMT Package General Description NC DSA Out NC NC Amp2 In NC 24 23 22 21 20 19 Pin 1 Marking

MURATA GRM15

Contextual Info: TA4500F TOSHIBA Bipolar Linear Integrated Circuit SiGe Monolithic TA4500F 1.9 GHz Band RX Front-End IC PHS, Digital Cordless Telecommunication Applications Features • Low-noise amplifier / down-conversion mixer • Integrated local buffer amplifier • Single positive power supply: VCC = 3.0 V

PHILIPS capacitors 0.1 mf

Abstract: Transistor t 2 smd motorola
Contextual Info: Freescale Semiconductor Technical Data MRF18090A Rev. 6, 12/2004 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

smd transistor marking j2

Abstract: Transistor z1
Contextual Info: Freescale Semiconductor Technical Data MRF18090A Rev. 6, 12/2004 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

smd transistor marking j6

Abstract: transistor 6 pin SMD Z2 smd transistor marking j8 SMD Transistor z6 transistor J585 transistor smd z9 C5 MARKING TRANSISTOR TRANSISTOR Z4 SMD transistor 2x sot 23 TRANSISTOR SMD 2X K
Contextual Info: Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF18090AR3 LIFETIME BUY Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

gilbert cell mixer

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRFIC0931 The MRFIC Line Balanced Transmit Mixer The MRFIC0931 is a balanced Gilbert cell mixer with LO buffer amplifier intended for transmit upmixer application. The device is usable for Industrial,

Contextual Info: Freescale Semiconductor Technical Data MRF18060B Rev. 6, 1/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

smd transistor marking z3

Abstract: smd transistor marking j8 MOSFET marking Z4 transistor 6 pin SMD Z2 smd transistor marking z8 freescale semiconductor body marking smd transistor marking j6 Z9 TRANSISTOR SMD 465B MRF18090A
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF18090A Rev. 7, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

TLX8-0300

Abstract: transistor J585
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF18090A Rev. 8, 10/2008 RF Power Field Effect Transistor MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

transistor marking PB C8

Abstract: NI-780S SMD transistor 2x sot 23
Contextual Info: Freescale Semiconductor Technical Data MRF18060B Rev. 6, 1/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

Contextual Info: Freescale Semiconductor Technical Data Rev. 4, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF18090A Rev. 8, 10/2008 RF Power Field Effect Transistor MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier