MARKING CB BAS40 Search Results

Contextual Info: BAS40-04LT1 Preferred Device Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount

marking 04L sot23

Abstract: sot23 04l BAS40-04L BAS40-04LT1 04L sot23 marking 04L to236AB marking cb bas40
Contextual Info: BAS40-04LT1 Preferred Device Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount

marking L2 package SOT

Abstract: BAS40 BAS40-04 BAS40-05 BAS40-06 sot-23 Marking B1 marking CB sot-23
Contextual Info: BAS40/BAS40-04 BAS40-05/BAS40-06 Surface Mount Schottky Barrier Diodes SMALL SIGNAL SCHOTTKY DIODES 200m AMPERES 40 VOLTS Features: *Extremely Fast Switching Speed *Low Forward Voltage *Very Small Conduction Losses *Schottky Barrier Diodes Encapsulated in a SOT-23 Package

Contextual Info: BAS40/BAS40-04 BAS40-05/BAS40-06 Surface Mount Schottky Barrier Diodes SMALL SIGNAL SCHOTTKY DIODES 200m AMPERES 40 VOLTS Features: * Low forward current * Guard ring protected * Low diode capacitance. Applications: 3 * Ultra high-speed switching * Voltage clamping

SOt123 Package

Abstract: On semiconductor date Code sot-123 SOT-123
Contextual Info: BAS40−04LT1 Preferred Device Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount

BAS40-04L

Abstract: BAS40-04LT1 DIODE marking 04l T1G PACKAGE 04L sot23
Contextual Info: BAS40-04LT1 Preferred Device Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount

BAS40-04LT1G

Abstract: BAS40 Schottky Barrier Diodes
Contextual Info: BAS40-04LT1G Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where

On semiconductor date Code sot-123

Abstract: SOT-123 SOT123 BAS40-04LT1G 04LT1 BAS40 sot 123
Contextual Info: BAS40−04LT1 Preferred Device Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount

SBAS40-04LT1G

Abstract: 04LT
Contextual Info: BAS40-04LT1G, SBAS40-04LT1G Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount

04LT1

Abstract: BAS40 BAS40-04L marking 04L sot23
Contextual Info: BAS40−04LT1 Preferred Device Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount

Contextual Info: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LBAS40LT1G Series Features 3 Low forward current Guard ring protected Low diode capacitance. 1 2 APPLICATIONS SOT- 23 Ultra high-speed switching Voltage clamping Protection circuits. 1 Anode Blocking diodes.

BAS40

Abstract: BAS40-04
Contextual Info: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LBAS40LT1G Series Features 3 Low forward current Guard ring protected Low diode capacitance. 1 2 APPLICATIONS SOT- 23 Ultra high-speed switching Voltage clamping Protection circuits. 1 Anode Blocking diodes.

BAS40

Abstract: BAS40-04
Contextual Info: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LBAS40XLT1G Features 3 Low forward current Guard ring protected Low diode capacitance. 1 2 APPLICATIONS SOT- 23 Ultra high-speed switching Voltage clamping Protection circuits. 1 Anode Blocking diodes. 3 Cathode

Contextual Info: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features Low forward current Guard ring protected LBAS40LT1G Series S-LBAS40LT1G Series Low diode capacitance. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

Contextual Info: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features Low forward current Guard ring protected Low diode capacitance. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

SOT-23

Abstract: BAS40-04
Contextual Info: Formosa MS BAS40 / BAS40-04 / BAS40-05 / BAS40-06 SMD Small Signal Schottky Diode List List. 1 Package outline. 2

diode list

Abstract: smd diode schottky code marking l2
Contextual Info: Formosa MS BAS40 / BAS40-04 / BAS40-05 / BAS40-06 SMD Small Signal Schottky Diode List List. 1 Package outline. 2

Contextual Info: Formosa MS BAS40 / BAS40-04 / BAS40-05 / BAS40-06 SMD Small Signal Schottky Diode List List. 1 Package outline. 2

BAS40

Abstract: BAS40-04 BAS40-05 BAS40-06
Contextual Info: Formosa MS SMD Small Signal Schottky Barrier Diode BAS40 / 04 / 05 / 06 List List. 1 Package outline. 2

Contextual Info: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features Low forward current Guard ring protected Low diode capacitance. LBAS40XLT1G 3 APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits. Blocking diodes. DESCRIPTION Planar Schottky barrier diodes with an integrated guard ring for

Contextual Info: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DOUBLE DIODE LBAS40*LT1G 3 1 Features 2 Low forward current Guard ring protected Low diode capacitance. SOT- 23 APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits. Blocking diodes. DESCRIPTION

LBAS40-06LT1

Abstract: BAS40 BAS40-04 BAS40-05 BAS40-06 LBAS40-04LT1 LBAS40-05LT1 LBAS40LT1
Contextual Info: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DOUBLE DIODE LBAS40*LT1 3 1 Features 2 Low forward current Guard ring protected Low diode capacitance. SOT- 23 APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits. Blocking diodes. DESCRIPTION

Siemens pulse sequence

Abstract: power supply siemens s5 Siemens diode Ssi
Contextual Info: SIEMENS mmmmmmwm•■tWhP CGY 191 GaAs MMIC • • • • • Dual mode power amplifier for CDMA /TDMA portable cellular phones 29 dBm linear output power PAE=40% typ. Fully integrated 2 stage amplifier Power ramp control Input matched to 50 ohms, simple output match

Pnp transistor smd ba rn

Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
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