MARKING CL SOT363 Search Results

digital transistor array

Abstract: marking 702 sot363
Contextual Info: SIEMENS BCR 169S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two galvanic internal isolated Transistors in one package • Built in bias resistor (R1=4.7kQ) Cl U 12 FI FI FI U lii ÜJ Type Marking Ordering Code Pin Configuration

lr1551

Abstract: SOT363-6 003 SOT363 SOT363 6
Contextual Info: Leshan Radio Co ., Ltd 2.7Ω Ω Low Voltage SPDT Analog Switch in 6-pin SOT363 LR1551 Description Features Wide Power Supply Range: 1.8V to 5.5V The LR1551 is a Single Wide-Bandwidth, fast single- High Bandwidth: 300MHz pole double-throw SPDT CMOS switch featuring an

SOT363-6

Abstract: BL1551 SOT363 6 003 SOT363 marking CL SOT363 sot363-6 marking SOT-363-6
Contextual Info: BL1551—Single SPDT Analog Switch 2.7Ω Ω Low Voltage SPDT Analog Switch in 6-pin SOT363 Description Features Wide Power Supply Range: 1.8V to 5.5V The BL1551 is a Single Wide-Bandwidth, fast single- High Bandwidth: 300MHz pole double-throw SPDT CMOS switch featuring an

74LVC2G06DW-7

Contextual Info: 74LVC2G06 DUAL INVERTER WITH OPEN DRAIN OUTPUTS Description Pin Assignments The 74LVC2G06 is a dual inverter gate with open drain outputs. The device is designed for operation with a power SOT26 SOT363 are Future Products supply range of 1.65V to 5.5V. The input is tolerant to 5.5V

Contextual Info: MMBD4148TW / BAS16TW SURFACE MOUNT FAST SWITCHING DIODE ARRAY Features Mechanical Data • Fast Switching Speed • • Ultra-Small Surface Mount Package • • For General Purpose Switching Applications Case: SOT363 Case Material: Molded Plastic, “Green” Molding Compound.

Contextual Info: DMN66D0LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS RDS(ON) 60V 6Ω @ VGS = 5V 5Ω @ VGS = 10V Features and Benefits ID TA = +25°C 90mA 115mA Package SOT363 Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching

Contextual Info: MMDT2907A 60V DUAL PNP SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • Ultra-Small Surface Mount Package   Epitaxial Planar Die Construction   Ideal for Low Power Amplification and Switching  Totally Lead-Free & Fully RoHS compliant Notes 1 & 2

Contextual Info: DMMT3906W 40V MATCHED PAIR PNP SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • BVCEO > -40V • • IC = -200mA High Collector Current • • • Pair of PNP Transistors That Are Intrinsically Matched Note 1 2% Matching on Current Gain (hFE)

15KV

Abstract: diode sot363
Contextual Info: LITE-ON SEMICONDUCTOR L02ESD5V0D6-5 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 25 WATTS UNIDIRECTIONAL ESD PROTECTION DIODE SOT363 GENERAL DESCRIPTION The L02ESD5V0D6-5 is a low capacitance 5-fold ESD protection diode array in SOT363 package. C B FEATURES

BD5 diode

Contextual Info: LITE-ON SEMICONDUCTOR L02ESD5V0D6-5 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 25 WATTS UNIDIRECTIONAL ESD PROTECTION DIODE SOT363 GENERAL DESCRIPTION The L02ESD5V0D6-5 is a low capacitance 5-fold ESD protection diode array in SOT363 package. C B FEATURES

Contextual Info: LITE-ON SEMICONDUCTOR L02ESD5V0D6-5 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 25 WATTS UNIDIRECTIONAL ESD PROTECTION DIODE GENERAL DESCRIPTION SOT363 The L02ESD5V0D6-5 is a low capacitance 5-fold ESD protection diode array in SOT363 package. C B FEATURES

Contextual Info: DMMT3904W 40V MATCHED PAIR NPN SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • • BVceo > 40V IC = 200mA high Collector Current • • • Pair of NPN transistors that are intrinsically matched Note 1 2% Matching on Current Gain (hFE) •

Contextual Info: DSS8110Y 100V NPN LOW SATURATION TRANSISTOR IN SOT363 Features Mechanical Data • BVCEO > 100V  Case: SOT363  IC = 1A high Continuous Collector Current   ICM = 3A Peak Pulse Current Case Material: Molded Plastic, “Green” Molding Compound.

aurix

Abstract: XPOSYS 726-ESD3V3U1U02LRHE6 teaklite
Contextual Info: TVS Diodes Transient Voltage Suppressor Diodes ESD3V3U1U Series Uni-directional Ultra-low Capacitance ESD / Transient Protection Diode ESD3V3U1U-02LS ESD3V3U1U-02LRH Data Sheet Revision 1.0, 2011-04-12 Final Industrial and Multi-Market Edition 2011-04-12 Published by

L02ESD5V0D6-5

Abstract: 15KV diode sot363
Contextual Info: LITE-ON SEMICONDUCTOR L02ESD5V0D6-5 STAND-OFF VOLTAGE- 5.0 Volts POWER DISSIPATION - 25 WATTS UNIDIRECTIONAL ESD PROTECTION DIODE SOT363 GENERAL DESCRIPTION The L02ESD5V0D6-5 is a low capacitance 5-fold ESD protection diode array in SOT363 package. C B FEATURES

AN140

Abstract: AN210 C166 ESD5V3U1U-02LRH ESD5V3U1U-02LS IEC61000-4-4 SC74 MDDI 1.5 MDDI aurix
Contextual Info: TVS Diodes Transient Voltage Suppressor Diodes ESD5V3U1U Series Uni-directional Ultra-Low Capacitance ESD / Transient Protection Diode ESD5V3U1U-02LS ESD5V3U1U-02LRH Data Sheet Revision 1.0, 2011-05-27 Final Industrial and Multi-Market Edition 2011-05-27 Published by

Contextual Info: TVS Diodes Transient Voltage Suppressor Diodes ESD5V3U1U Series Uni-directional Ultra-Low Capacitance ESD / Transient Protection Diode ESD5V3U1U-02LS ESD5V3U1U-02LRH Data Sheet Revision 1.0, 2011-05-27 Final Industrial and Multi-Market Edition 2011-05-27 Published by

infineon x-gold

Abstract: PG-TSSLP-2-17 ESD0P2RF-02LRH X-GOLD 116 xgold
Contextual Info: TVS Diodes Transient Voltage Suppressor Diodes ESD0P2RF Series Bi-directional Ultra-low Capacitance ESD / Transient Protection Diode ESD0P2RF-02LS ESD0P2RF-02LRH Data Sheet Revision 1.0, 2011-05-19 Final Industrial and Multi-Market Edition 2011-05-19 Published by

microwave satellite antenna

Contextual Info: TVS Diodes Transient Voltage Suppressor Diodes ESD0P2RF Series Bi-directional Ultra-low Capacitance ESD / Transient Protection Diode ESD0P2RF-02LS ESD0P2RF-02LRH Data Sheet Revision 1.0, 2011-08-01 Final Industrial and Multi-Market Edition 2011-08-01 Published by

Contextual Info: DMN65D8LDW Green DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) Package 8Ω @ VGS = 5V 60V • • • • • • • • • • ID TA = +25°C 170mA SOT363 200mA 6Ω @ VGS = 10V Description This new generation MOSFET has been designed to minimize the

Contextual Info: 74LVC2G17 DUAL SCHMITT TRIGGER BUFFER Description Pin Assignments The 74LVC2G17 is a dual Schmitt trigger buffer gate with standard push-pull outputs. The device is designed for operation with a power supply range of 1.65V to 5.5V. The SOT26 SOT363 are Future

TSLP

Contextual Info: TVS Diodes Transient Voltage Suppressor Diodes ESD5V0L1B-02V Bi-directional Low Capacitance TVS Diode ESD5V0L1B-02V Data Sheet Revision 1.0, 2010-12-16 Final Industrial and Multi-Market Edition 2010-12-16 Published by Infineon Technologies AG 81726 Munich, Germany

DMN65D

Abstract: DMN65D8LDW DMN65D8LDW-7
Contextual Info: DMN65D8LDW Green DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) Package 8Ω @ VGS = 5V 60V • • • • • • • • • • ID TA = +25°C 170mA SOT363 200mA 6Ω @ VGS = 10V Description This new generation MOSFET has been designed to minimize the

Contextual Info: TVS Diodes Transient Voltage Suppressor Diodes ESD5V0L1B-02V Bi-directional Low Capacitance TVS Diode ESD5V0L1B-02V Data Sheet Revision 1.0, 2010-12-16 Final Industrial and Multi-Market Edition 2010-12-16 Published by Infineon Technologies AG 81726 Munich, Germany