SLUFM1GU
Abstract: hirose 6 pin serial 9 pin serial flash memory 16gb format block diagram laptop ac adapter SLUFM4GU2TUI SLUFM16GU2TU-A usb flash
Text: 1GB to 16GB USB Flash Module SLUFMxxxU2TU I -y USB Solid-State Flash Disk Capacity: 1GB - 16GB USB 2.0 Compliant Form Factors: • Horizontal Mount • Standard 2x5 or Hirose 9-Pin Connector 2x Planar TSOP Flash or 2x Stacked TSOP Flash High Reliability:
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block diagram laptop ac adapter
Abstract: SLUFM16GU2U-A nand flash pcb layout design serial flash memory 16gb format JESD22-B110 nand flash 16gb hirose 6 pin serial 9 pin
Text: 1GB to 16GB USB Flash Module www.stec-inc.com SLUFMxGU2U I -y USB Solid-State Flash Disk Capacity: 1GB - 16GB USB 2.0 Compliant Form Factors: • Horizontal Mount • Standard Connector or 9-Pin DConnector 1-High TSOP Flash Placement or Stacked TSOP Flash Placement
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marking code IC .ftf
Abstract: BFR340T GPS05996
Text: BFR340T NPN Silicon RF Transistor 3 Target Data • • • • Low Voltage/ Low Current Operation High Transistion Frequency of 16GHz High Insertion Gain Ideal for Low Current and Amplifiers and Oscillators 2 1 VPS05996 ESD: Electrostatic discharge sensitive device,
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BFR340T
16GHz
VPS05996
P-SC-75
GPS05996
marking code IC .ftf
BFR340T
GPS05996
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Untitled
Abstract: No abstract text available
Text: Product Data Sheet Industrial USB Flash Drive unitedCONTRAST II USB2.0 high speed USB Flash Drive unitedCONTRAST 512MByte to 16GByte USB Flash Drive UFD provides non-volatile, solid-state storage in different design options, making it perfectly suited for OEM and industrial market. Swissbit uses high end USB 2.0 flash memory controller, providing high
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512MByte
16GByte
CH-9552
Rev120
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32GB eMMC
Abstract: MTFC8GLDEA-4M IT micron eMMC 5.0 emmc bga 162 BGA 221 eMMC micron emmc application note 221 ball eMMC memory emmc 4.41 firmware operation MTFC4G micron emmc 4.5
Text: Micron Confidential and Proprietary 4GB, 8GB, 16GB, 32GB, 64GB: e•MMC Features e·MMC Memory MTFC4GMDEA-4M IT, MTFC8GLDEA-4M IT, MTFC16GJDEC-4M IT, MTFC32GJDED-4M IT, MTFC64GJDDN-4M IT Features Figure 1: Micron e·MMC Device • MultiMediaCard MMC controller and NAND Flash
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MTFC16GJDEC-4M
MTFC32GJDED-4M
MTFC64GJDDN-4M
169-ball
09005aef8523ca91
4gb-64gb
441-it
32GB eMMC
MTFC8GLDEA-4M IT
micron eMMC 5.0
emmc bga 162
BGA 221 eMMC
micron emmc application note
221 ball eMMC memory
emmc 4.41 firmware operation
MTFC4G
micron emmc 4.5
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Untitled
Abstract: No abstract text available
Text: Flush Silhouette Switches LB Series / LBW Series ø16mm LB Series Switches and Pilot Lights LB Series Flush Silhouette Switches ø16mm LB Series Miniature Switches and Pilot Lights LBW Series Flush Silhouette Switches S t y lis h a nd Fuct iona l IDEC's extensive range of LB/LBW series switches can be used for a
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262-IDEC
EP1426-0
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SK162
Abstract: No abstract text available
Text: SKFM1640C-D2 FM120-M+ WILLAS THRU THRU 16.0A SCHOTTKY BARRIER RECTIFIERS - 40V- 200V FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER D2PAKRECTIFIERS PACKAGE-20V- 200VSKFM16200C-D2 Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers
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00C-D2
FM1200-M
200VSKFM162
OD-123+
SKFM164
FM120-M
OD-123H
FM120-MH
FM130-MH
FM140-MH
SK162
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emmc bga 162
Abstract: BGA 221 eMMC MTFC4GLDDQ-4M IT MTFC32GJDDQ-4M IT emmc CID eMMC 4.41 application note MTFC4GLDDQ-4M MMC04G 221 ball eMMC memory MMC08G
Text: Micron Confidential and Proprietary 4GB, 8GB, 16GB, 32GB: e•MMC Features e·MMC Memory MTFC4GLDDQ-4M IT, MTFC8GLDDQ-4M IT MTFC16GJDDQ-4M IT, MTFC32GJDDQ-4M IT Features Figure 1: Micron e·MMC Device • MultiMediaCard MMC controller and NAND Flash • 100-ball LBGA (RoHS 6/6compliant)
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MTFC16GJDDQ-4M
MTFC32GJDDQ-4M
100-ball
09005aef8523caab
4-32gb
100b-it
emmc bga 162
BGA 221 eMMC
MTFC4GLDDQ-4M IT
MTFC32GJDDQ-4M IT
emmc CID
eMMC 4.41 application note
MTFC4GLDDQ-4M
MMC04G
221 ball eMMC memory
MMC08G
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LA2F-32C61
Abstract: TWR542 21c14 LFTD18 LA1F-32C61 OSS-62852F3 LA2L-A1C23 TWR522 LA1F-21C23 LA1F-2C14
Text: ø16 L6 Series Miniature Control Units Light duty L6 series Suitable for electronic devices and for food processing and packaging industries. • Locking lever removable contact blocks • Bright and clear LED illumination • Gold-clad cross bar contacts and silver contacts
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EN60947-1,
EN60947-5-1,
LA2F-32C61
TWR542
21c14
LFTD18
LA1F-32C61
OSS-62852F3
LA2L-A1C23
TWR522
LA1F-21C23
LA1F-2C14
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DPDT 5V
Abstract: LA1T
Text: ø16mm L6 Series Miniature Control Units 07/02/08 ø16 L6 Series Miniature Control Units Series L6 Series Miniature Control Units Mounting Hole Size ø16 LA L/LA P Type LA B LA1T LA S Appearance Illuminated Pushbuttons (momentary, maintained) Pilot Lights
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EP1154-0
DPDT 5V
LA1T
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Untitled
Abstract: No abstract text available
Text: SDB160G SCHOTTKY RECTIFIER DIODE Schottky Barrier Rectifier General Description The SDB160G surface mounted Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power
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SDB160G
SDB160G
OD-123
13-SEP-12
KSD-D6B039-000
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Untitled
Abstract: No abstract text available
Text: Product Data Sheet Industrial USB Flash Drive Module U-110 Series USB2.0 high speed U-110 Series USB Flash Drive Module 1GByte to 16GByte USB Flash Drive Module provides non-volatile, solid-state storage in a compact design, making it perfectly suited for embedded applications. The standard USB 2.0 interface provides designers with a true plug-n-play storage
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U-110
16GByte
CH-9552
Rev120
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SLCF16GM4TU
Abstract: SLCF16GM4TUI mwdma
Text: 8GB and 16GB CompactFlash Card SLCFxxxM4TU I Solid-State Memory Card (No Moving Parts) Capacity: 8GB - 16GB CFA 4.1 and ATA-7 Compatible PCMCIA Memory Mode: • UDMA Modes Supported: Up to 6 • PIO Modes Timing: up to 80ns PCMCIA I/O Mode: UDMA Modes Supported: Up to 6
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STEC M2T CF 1.0.0
Abstract: SLCF128M2TUI 94000-01889 SLCF128M2TUI-S SLCF512M2TUI SLCF16GM2TUI SLCF2G 94000-01889-3A4 SLCF1GM2TUI SLCF256M2TU
Text: 128MB to 16GB CompactFlash Card www.stec-inc.com SLCFxxxM2TU I (-x) Solid-State Memory Card (No Moving Parts) Capacity: 128MB - 16GB CFA 4.1 and ATA-7 Compatible PCMCIA Memory Mode: • UDMA Modes Supported: Up to 4 • PIO Modes Timing: up to 80ns PCMCIA I/O Mode:
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128MB
STEC M2T CF 1.0.0
SLCF128M2TUI
94000-01889
SLCF128M2TUI-S
SLCF512M2TUI
SLCF16GM2TUI
SLCF2G
94000-01889-3A4
SLCF1GM2TUI
SLCF256M2TU
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DDR3 timing diagram
Abstract: QuadDie DDR3 DDR3 impedance DDR3 SDRAM micron MT41J2G8 micron marking code information micron power resistor Micron quaddie micron technology 2013 ddr3 78 ball
Text: Preliminary‡ 16Gb: x4, x8 QuadDie DDR3 SDRAM Features QuadDie DDR3 SDRAM MT41J4G4 – 128 Meg x 4 x 8 Banks x 4 Ranks MT41J2G8 – 64 Meg x 8 x 8 Banks x 4 Ranks Features Options Marking • Configuration – 128 Meg x 4 x 8 banks x 4 ranks – 64 Meg x 8 x 8 banks x 4 ranks
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MT41J4G4
MT41J2G8
SAC305
09005aef850f7993
DDR3 timing diagram
QuadDie DDR3
DDR3 impedance
DDR3 SDRAM micron
MT41J2G8
micron marking code information
micron power resistor
Micron quaddie
micron technology 2013
ddr3 78 ball
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MT41K2G8
Abstract: MT41K4G4 MT41K1GM4 micron technology 2013 Micron quaddie
Text: Preliminary‡ 16Gb: x4, x8 QuadDie DDR3L SDRAM Features QuadDie DDR3L SDRAM MT41K4G4 – 128 Meg x 4 x 8 Banks x 4 Ranks MT41K2G8 – 64 Meg x 8 x 8 Banks x 4 Ranks Features Marking Options • Configuration – 128 Meg x 4 x 8 banks x 4 ranks – 64 Meg x 8 x 8 banks x 4 ranks
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MT41K4G4
MT41K2G8
SAC305
09005aef850f70c4
MT41K2G8
MT41K4G4
MT41K1GM4
micron technology 2013
Micron quaddie
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DDR3 SDRAM micron
Abstract: micron technology 2013 DDR3 impedance QuadDie DDR3
Text: Preliminary‡ 16Gb: x4, x8 QuadDie DDR3 SDRAM Features QuadDie DDR3 SDRAM MT41J4G4 – 128 Meg x 4 x 8 Banks x 4 Ranks MT41J2G8 – 64 Meg x 8 x 8 Banks x 4 Ranks Features Options Marking • Configuration – 128 Meg x 4 x 8 banks x 4 ranks – 64 Meg x 8 x 8 banks x 4 ranks
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MT41J4G4
MT41J2G8
SAC305
09005aef850f7993
DDR3 SDRAM micron
micron technology 2013
DDR3 impedance
QuadDie DDR3
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MT41K2G8
Abstract: No abstract text available
Text: Preliminary‡ 16Gb: x4, x8 QuadDie DDR3L SDRAM Features QuadDie DDR3L SDRAM MT41K4G4 – 128 Meg x 4 x 8 Banks x 4 Ranks MT41K2G8 – 64 Meg x 8 x 8 Banks x 4 Ranks Features Marking Options • Configuration – 128 Meg x 4 x 8 banks x 4 ranks – 64 Meg x 8 x 8 banks x 4 ranks
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MT41K4G4
MT41K2G8
78-ball
DDR3-1333)
DDR3-1066)
SAC305
09005aef850f70c4
MT41K2G8
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JD38999
Abstract: TV07WCI Socapex TV06RW TVS07BCI NATO STANAG 1135 TVP00WCI TVPS00FCI TV07*W MIL-DTL-38999-III tv06rw
Text: TV CTV - E113/D 20/12/01 16:41 Page 3 Tri-Start TV-CTV TM Main features • Shell material - Composite - Aluminium - Marine bronze - Stainless steel l heno ED Amp O R V L APP QP • Finish - Olive drab cadmium plating - Nickel plating - Passivation for steel versions
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E113/D
MIL-DTL-38999
JD38999/20J
E113/C
JD38999
TV07WCI
Socapex TV06RW
TVS07BCI
NATO STANAG 1135
TVP00WCI
TVPS00FCI
TV07*W
MIL-DTL-38999-III
tv06rw
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hy27u*08ag5
Abstract: HY27UH08AG5B Hynix 16Gb Nand flash hynix nand NAND FLASH 64MB reset nand flash HYNIX hynix nand edc spare area code hynix nand flash 1.8v 4Gb
Text: 1 HY27UH08AG5B Series 16Gbit 2Gx8bit NAND Flash 16Gb NAND FLASH HY27UH08AG5B This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY27UH08AG5B
16Gbit
HY27UH08AG5B
hy27u*08ag5
Hynix 16Gb Nand flash
hynix nand
NAND FLASH 64MB
reset nand flash HYNIX
hynix nand edc spare area code
hynix nand flash 1.8v 4Gb
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TRANSISTOR 131-6 BJ 946
Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise
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OCR Scan
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B3-B3715
B3715-X-X-7600
TRANSISTOR 131-6 BJ 946
transistor bc 564
transistor Bc 949 datenblatt
TRANSISTOR BC 545
MARKING CODE AGS bsp 2000
siemens datenbuch
bft99
mmic SMD amplifier marking code 19s
TRANSISTOR SMD MARKING CODE bc ru
DIODE smd marking 22-16
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HYNIX HY27UH08AG5M
Abstract: HY27UH08AG5M hynix nand spare area 16gb hy27u*08ag5 HY27UH08AGDM hynix nand flash Hynix 16Gb Nand flash
Text: Preliminary HY27UH08AG 5/D M Series 16Gbit (2Gx8bit) NAND Flash 16Gb NAND FLASH HY27UH08AG5M HY27UH08AGDM This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY27UH08AG
16Gbit
HY27UH08AG5M
HY27UH08AGDM
HY27UH08AGDM
HYNIX HY27UH08AG5M
HY27UH08AG5M
hynix nand spare area
16gb
hy27u*08ag5
hynix nand flash
Hynix 16Gb Nand flash
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HYNIX HY27UH08AG5M
Abstract: HY27UH08AG5M hy27u*08ag5 hynix nand Hynix 16Gb Nand flash 16G nand HY27U*G5M hynix nand PROGRAMMING marking GG uLGA
Text: HY27UH08AG 5/D M Series 16Gbit (2Gx8bit) NAND Flash 16Gb NAND FLASH HY27UH08AG5M HY27UH08AGDM This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY27UH08AG
16Gbit
HY27UH08AG5M
HY27UH08AGDM
HY27UH08AGDM
HYNIX HY27UH08AG5M
HY27UH08AG5M
hy27u*08ag5
hynix nand
Hynix 16Gb Nand flash
16G nand
HY27U*G5M
hynix nand PROGRAMMING
marking GG
uLGA
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Untitled
Abstract: No abstract text available
Text: HT11G - HT18G 1.0AMP Glass Passivated High Efficient Rectifiers TS-1 Features Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability For use in low voltage, high frequency inverter,
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HT11G
HT18G
MIL-STD-202,
22-B106
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