block diagram laptop ac adapter
Abstract: SLUFM16GU2U-A nand flash pcb layout design serial flash memory 16gb format JESD22-B110 nand flash 16gb hirose 6 pin serial 9 pin
Text: 1GB to 16GB USB Flash Module www.stec-inc.com SLUFMxGU2U I -y USB Solid-State Flash Disk Capacity: 1GB - 16GB USB 2.0 Compliant Form Factors: • Horizontal Mount • Standard Connector or 9-Pin DConnector 1-High TSOP Flash Placement or Stacked TSOP Flash Placement
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marking code IC .ftf
Abstract: BFR340T GPS05996
Text: BFR340T NPN Silicon RF Transistor 3 Target Data • • • • Low Voltage/ Low Current Operation High Transistion Frequency of 16GHz High Insertion Gain Ideal for Low Current and Amplifiers and Oscillators 2 1 VPS05996 ESD: Electrostatic discharge sensitive device,
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BFR340T
16GHz
VPS05996
P-SC-75
GPS05996
marking code IC .ftf
BFR340T
GPS05996
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SK162
Abstract: No abstract text available
Text: SKFM1640C-D2 FM120-M+ WILLAS THRU THRU 16.0A SCHOTTKY BARRIER RECTIFIERS - 40V- 200V FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER D2PAKRECTIFIERS PACKAGE-20V- 200VSKFM16200C-D2 Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers
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00C-D2
FM1200-M
200VSKFM162
OD-123+
SKFM164
FM120-M
OD-123H
FM120-MH
FM130-MH
FM140-MH
SK162
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LA2F-32C61
Abstract: TWR542 21c14 LFTD18 LA1F-32C61 OSS-62852F3 LA2L-A1C23 TWR522 LA1F-21C23 LA1F-2C14
Text: ø16 L6 Series Miniature Control Units Light duty L6 series Suitable for electronic devices and for food processing and packaging industries. • Locking lever removable contact blocks • Bright and clear LED illumination • Gold-clad cross bar contacts and silver contacts
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EN60947-1,
EN60947-5-1,
LA2F-32C61
TWR542
21c14
LFTD18
LA1F-32C61
OSS-62852F3
LA2L-A1C23
TWR522
LA1F-21C23
LA1F-2C14
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DPDT 5V
Abstract: LA1T
Text: ø16mm L6 Series Miniature Control Units 07/02/08 ø16 L6 Series Miniature Control Units Series L6 Series Miniature Control Units Mounting Hole Size ø16 LA L/LA P Type LA B LA1T LA S Appearance Illuminated Pushbuttons (momentary, maintained) Pilot Lights
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EP1154-0
DPDT 5V
LA1T
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STEC M2T CF 1.0.0
Abstract: SLCF128M2TUI 94000-01889 SLCF128M2TUI-S SLCF512M2TUI SLCF16GM2TUI SLCF2G 94000-01889-3A4 SLCF1GM2TUI SLCF256M2TU
Text: 128MB to 16GB CompactFlash Card www.stec-inc.com SLCFxxxM2TU I (-x) Solid-State Memory Card (No Moving Parts) Capacity: 128MB - 16GB CFA 4.1 and ATA-7 Compatible PCMCIA Memory Mode: • UDMA Modes Supported: Up to 4 • PIO Modes Timing: up to 80ns PCMCIA I/O Mode:
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STEC M2T CF 1.0.0
SLCF128M2TUI
94000-01889
SLCF128M2TUI-S
SLCF512M2TUI
SLCF16GM2TUI
SLCF2G
94000-01889-3A4
SLCF1GM2TUI
SLCF256M2TU
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K9F2G08U0B-PCB0
Abstract: samsung K9 flash Toggle DDR NAND flash K9F2G08U0B-PIB0 K9F2G08U0B samsung 128G nand flash movinand DECODER Samsung EOL K9F2G08U0B-PIB00 samsung toggle mode NAND
Text: SAMSUNG's Digital World go contents Flash ● ● ● ● ● NAND Flash ❍ Products ❍ EOL Products Toggle DDR NAND Flash ❍ Products Flash SSD NOR Flash ❍ Products ❍ EOL Products Flash Cards ❍ Products ❍ EOL Products Product Search ● ● ●
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K9F2G08U0B
07-Sep-2010
K9F2G08U0B-PCB0
samsung K9 flash
Toggle DDR NAND flash
K9F2G08U0B-PIB0
samsung 128G nand flash
movinand DECODER
Samsung EOL
K9F2G08U0B-PIB00
samsung toggle mode NAND
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DDR3 timing diagram
Abstract: QuadDie DDR3 DDR3 impedance DDR3 SDRAM micron MT41J2G8 micron marking code information micron power resistor Micron quaddie micron technology 2013 ddr3 78 ball
Text: Preliminary‡ 16Gb: x4, x8 QuadDie DDR3 SDRAM Features QuadDie DDR3 SDRAM MT41J4G4 – 128 Meg x 4 x 8 Banks x 4 Ranks MT41J2G8 – 64 Meg x 8 x 8 Banks x 4 Ranks Features Options Marking • Configuration – 128 Meg x 4 x 8 banks x 4 ranks – 64 Meg x 8 x 8 banks x 4 ranks
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MT41J4G4
MT41J2G8
SAC305
09005aef850f7993
DDR3 timing diagram
QuadDie DDR3
DDR3 impedance
DDR3 SDRAM micron
MT41J2G8
micron marking code information
micron power resistor
Micron quaddie
micron technology 2013
ddr3 78 ball
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MT41K2G8
Abstract: MT41K4G4 MT41K1GM4 micron technology 2013 Micron quaddie
Text: Preliminary‡ 16Gb: x4, x8 QuadDie DDR3L SDRAM Features QuadDie DDR3L SDRAM MT41K4G4 – 128 Meg x 4 x 8 Banks x 4 Ranks MT41K2G8 – 64 Meg x 8 x 8 Banks x 4 Ranks Features Marking Options • Configuration – 128 Meg x 4 x 8 banks x 4 ranks – 64 Meg x 8 x 8 banks x 4 ranks
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MT41K4G4
MT41K2G8
SAC305
09005aef850f70c4
MT41K2G8
MT41K4G4
MT41K1GM4
micron technology 2013
Micron quaddie
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DDR3 SDRAM micron
Abstract: micron technology 2013 DDR3 impedance QuadDie DDR3
Text: Preliminary‡ 16Gb: x4, x8 QuadDie DDR3 SDRAM Features QuadDie DDR3 SDRAM MT41J4G4 – 128 Meg x 4 x 8 Banks x 4 Ranks MT41J2G8 – 64 Meg x 8 x 8 Banks x 4 Ranks Features Options Marking • Configuration – 128 Meg x 4 x 8 banks x 4 ranks – 64 Meg x 8 x 8 banks x 4 ranks
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MT41J4G4
MT41J2G8
SAC305
09005aef850f7993
DDR3 SDRAM micron
micron technology 2013
DDR3 impedance
QuadDie DDR3
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U15B
Abstract: DDR2-400 DDR2-533 DDR2-667 MO-237 PC2-3200 PC2-5300 U29B MT47H1GM4THM
Text: 16GB x72, ECC, QR 240-Pin DDR2 SDRAM RDIMM Features DDR2 SDRAM RDIMM MT72HTS2G72(P) – 16GB For the latest component data sheets, refer to Micron’s Web site: www.micron.com Features Figure 1: • 240-pin, registered dual in-line memory module (RDIMM)
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240-Pin
MT72HTS2G72
240-pin,
PC2-3200,
PC2-4200,
PC2-5300
18-compatible)
09005aef82ab5d55/Source:
09005aef82ab5782
HTS72C2Gx72
U15B
DDR2-400
DDR2-533
DDR2-667
MO-237
PC2-3200
PC2-5300
U29B
MT47H1GM4THM
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Untitled
Abstract: No abstract text available
Text: SFT11G - SFT18G CREAT BY ART 1.0AMP. Glass Passivated Super Fast Rectifiers TS-1 Features High efficiency, low VF High current capability High reliability High surge current capability Low power loss For use in low voltage, high frequency inverter,
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SFT11G
SFT18G
MIL-STD-202,
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Untitled
Abstract: No abstract text available
Text: SFT11G - SFT18G CREAT BY ART 1.0AMP. Glass Passivated Super Fast Rectifiers TS-1 Features High efficiency, low VF High current capability High reliability High surge current capability Low power loss For use in low voltage, high frequency inverter,
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SFT11G
SFT18G
MIL-STD-202,
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Untitled
Abstract: No abstract text available
Text: SF11G - SF18G CREAT BY ART 1.0AMP. Glass Passivated Super Fast Rectifiers DO-41 Features High efficiency, low VF High current capability High reliability High surge current capability Low power loss For use in low voltage, high frequency inverter,
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SF11G
SF18G
DO-41
MIL-STD-202,
DO-41
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Untitled
Abstract: No abstract text available
Text: SFT11G thru SFT18G Taiwan Semiconductor CREAT BY ART Glass Passivated Super Fast Rectifiers FEATURES - High efficiency, low VF - High current capability - High reliability - High surge current capability - Low power loss - Compliant to RoHS Directive 2011/65/EU and
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SFT11G
SFT18G
2011/65/EU
2002/96/EC
JESD22-B102
D1312029
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Untitled
Abstract: No abstract text available
Text: HT11G thru HT18G Taiwan Semiconductor CREAT BY ART Glass Passivated High Efficient Rectifiers FEATURES - Glass passivated chip junction - High current capability - High reliability - High surge current capability - High efficiency, Low VF - Compliant to RoHS Directive 2011/65/EU and
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HT11G
HT18G
2011/65/EU
2002/96/EC
JESD22-B102
25oCd
D1407005
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Untitled
Abstract: No abstract text available
Text: SF11G thru SF18G Taiwan Semiconductor CREAT BY ART FEATURES Glass Passivated Super Fast Rectifiers - High efficiency, low VF - High current capability - High reliability - Low power loss - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
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SF11G
SF18G
2011/65/EU
2002/96/EC
DO-204AL
DO-41)
JESD22-B102
D1401007
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Untitled
Abstract: No abstract text available
Text: SF11G thru SF18G Taiwan Semiconductor CREAT BY ART FEATURES Glass Passivated Super Fast Rectifiers - High efficiency, low VF - High current capability - High reliability - Low power loss - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
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SF11G
SF18G
2011/65/EU
2002/96/EC
DO-204AL
DO-41)
JESD22-B102
D1401007
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movinand DECODER
Abstract: movinand 52-ULGA RNB CE package tsop1 16G BGA FLASH NAND Flash Code Information preprogram 52ULGA 1G NAND flash
Text: NAND Flash Code Information 1/3 Last Updated : August 2009 K9XXXXXXXX - XXXXXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 1. Memory (K) 2. NAND Flash : 9 3. Small Classification (SLC : Single Level Cell, MLC : Multi Level Cell, SM : SmartMedia, S/B : Small Block)
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movinand
Abstract: movinand DECODER 1g nand mcp movi nand S3C49VCX03 16G nand flash S3C49v 8G nand 16G nand MCP NAND
Text: MOVI NAND Code Information 1/3 Last Updated : November 2008 KMXXXXXXXX - XXXXXXX 1 2 3 4 5 6 7 8 1. Memory (K) 9 10 11 12 13 14 15 16 17 18 4. MoviNAND Density & Vcc & Org. & BB Co de 2. MOVI NAND/MCP : M moviNAN D Den NAND Den Ce ll 3. Small Classification
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SK6626
Abstract: S3C49RAA01 MARKING CODE 16G S3C49VCX03 movinand DECODER error free nand movinand NAND 32G 2g nand mcp 64G nand
Text: CTL_embedded NAND Code Information 1/3 Last Updated : November 2008 KLXXXXXXXX - XXXXXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 1. Memory (K) 8. VCC & VCCQ 2. MOVI NAND/MCP : L CTL : Controller 3. NAND Function E : Error Free NAND S : eSSD C : Cartridge SIP
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package tsop1
Abstract: 16G nand AG01000 NCE 6G memory 4g onenand
Text: One-NAND Code Information 1/2 Last Updated : August 2009 KFXXXXXXXX - XXXXXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 12. Package (AG01000 PKG SPEC Reference) A : FBGA (Lead-Free, Halogen-Free) B : FBGA (Lead-Free, Halogen-Free, OSP) D : FBGA (Lead-Free)
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AG01000
package tsop1
16G nand
NCE 6G
memory 4g onenand
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MS-90376
Abstract: 8599-0730 900 ms90376 BACC63CT 8599-0308 70201N BACC63DB MS90376-16R M3902977-428 8522-390A
Text: 8D - D38999 Composite Series Composite Series MIL-DTL-38999 Series III 31 8D Series - MIL-DTL-38999 Series III Description • High contact density • Screw coupling • Contact protection: 100% Scoop proof • Shell size from 9 to 25 • Accessories available protective caps,
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D38999
MIL-DTL-38999
MS90376-1
MS90376-16R
MS90376-22R
MS90376-24R
J599ABC6009A00
MS-90376
8599-0730 900
ms90376
BACC63CT
8599-0308
70201N
BACC63DB
M3902977-428
8522-390A
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Untitled
Abstract: No abstract text available
Text: Type SPV SMT - Solid Polymer Cathode Ultra-Low ESR Aluminum Electrolytic Capacitors - 10 to 20 mQ typical at 100 kHz High Ripple Current Long Life - up to 5.1 Amps at 105 c - No dry out failure related mechanism Stable Capacitance and ESR vs temperature Great for DC/DC Power Converters
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OCR Scan
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