MARKING CODE BR 37 SMD SOT23 Search Results

Contextual Info: Product specification PMV31XN N-channel TrenchMOS FET Rev. 2 — 30 November 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: Product specification PMV37EN 30 V, 3.1 A N-channel Trench MOSFET Rev. 1 — 9 May 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram

smd dual diode code 68

Abstract: B10 zener diode DIODE ZENER smd marking 72 marking code br 37 SMD sot23 Zener diode smd marking code w1 kdn 010 Zener diode smd marking code .18 SOT23 ZENER DIODE 5.1V smd Zener diode smd marking code 91 marking code 153 DIODE sod 23
Contextual Info: AZ23C2V7-AZ23C51 300mW, Dual SMD Zener Diode Small Signal Diode SOT-23 A Features F B E —Wide zener voltage range selection : 2.7V to 51V —VZ Tolerance ≦ ±5% C —Moisture sensitivity level 1 D —Matte Tin Sn lead finish —Pb free version and RoHS compliant

smd code 9fc

Abstract: smd 2d 1002 -reel smd diode 2d mosfet ir 840 SOT-23 marking 2f p-Channel sot-23 MARKING CODE nm
Contextual Info: bitemational Rectifier PD 9.1414 IR LM S6702 PRELIMINARY HEXFET Power MOSFET • Generation 5 Technology • Micro6 Package Style • Ultra Low Rds on V qss = -20V • P-Channel MOSFET Description Generation 5 HEXFETs from International Recti­ fier utilize advanced processing techniques to

RG130

Abstract: smd marking code sot-23 infineon BSS670S2L Q67042-S4052
Contextual Info: BSS670S2L Final data OptiMOS
=Small-Signal-Transistor Product Summary Feature
N-Channel VDS
Enhancement mode R DS on 650 m

Logic Level ID 0.54 A 55 V SOT-23 3 2 1 VPS05161 Drain pin 3 Type BSS670S2L Package SOT-23 Ordering Code Q67042-S4052 Gate pin1

marking code m4 SMD Transistor

Abstract: NXP TRANSISTOR SMD MARKING CODE SOT23 fet SMD CODE PACKAGE SOT23 smd code marking HD SOT23
Contextual Info: SO T2 3 PMV31XN N-channel TrenchMOS FET Rev. 2 — 30 November 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

MARKING CODE 16 transistor sot23

Abstract: smd code marking HD SOT23
Contextual Info: SO T2 3 PMV31XN N-channel TrenchMOS FET Rev. 2 — 30 November 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

AH375

Abstract: AH375-WG-7 SC59
Contextual Info: AH375 SINGLE PHASE HALL EFFECT LATCH Description Pin Assignments Top View AH375 is an integrated Hall-Effect latched sensor designed for electronic commutation of brush-less DC motor applications. The device includes an on-chip Hall voltage generator for magnetic sensing, a comparator that amplifies

Contextual Info: AH375 SINGLE PHASE HALL EFFECT LATCH Pin Assignments Description Top View AH375 is an integrated Hall-Effect latched sensor designed for electronic commutation of brush-less DC motor applications. The device includes an on-chip Hall voltage generator for magnetic sensing, a comparator that amplifies

c 337 25

Abstract: AH337 SC59 E hall sensor smd 4 pin AH337-PG-A
Contextual Info: AH337 SINGLE PHASE HALL EFFECT SWITCH Description Pin Assignments Top View AH337 is an unipolar Hall-Effect sensor for contactless switching applications. The device includes an on-chip Hall voltage generator for magnetic sensing, an amplifier that amplifies the Hall voltage, a Schmitt trigger to provide

E hall sensor smd 4 pin

Abstract: smd code Hall smd hall smd code marking wl sot23 SMD Hall C SC59 AH373 hall sensor smd 80 L smd hall effect sensor 3 PIN hall effect sensor smd
Contextual Info: AH373 INTERNAL PULL-UP HALL EFFECT LATCH Description Pin Assignments AH373 is a single-digital-output Hall-Effect latch sensor with pull-up resistor for high temperature operation. The device includes an on-chip Hall voltage generator for magnetic sensing, an amplifier to amplify Hall voltage, and a

Contextual Info: AH337 SINGLE PHASE HALL EFFECT SWITCH Pin Assignments Description Top View AH337 is an unipolar Hall-Effect sensor for contactless switching applications. The device includes an on-chip Hall voltage generator for magnetic sensing, an amplifier that amplifies the Hall voltage, a Schmitt trigger to provide

Contextual Info: AH373 INTERNAL PULL-UP HALL EFFECT LATCH Description Pin Assignments AH373 is a single-digital-output Hall-Effect latch sensor with pull-up resistor for high temperature operation. The device includes an on-chip Hall voltage generator for magnetic sensing, an amplifier to amplify Hall voltage, and a

Contextual Info: AH175 HALL EFFECT LATCH FOR HIGH TEMPERATURE Description Pin Assignments AH175 is a single-digital-output Hall-Effect latch sensor for high temperature operation. The device includes an on-chip Hall voltage generator for magnetic sensing, an amplifier to amplify Hall voltage, and a comparator to provide switching

SMD MARKING CODE C17

Abstract: MARKING MON sot-23 smd diode marking hg marking code 6c SMD IRLMSS703 l00a HG marking sot23
Contextual Info: PD 9.1540 International I G R Rectifier I IR L M S 1 9 0 2 PRELIMINARY HEXFET Power MOSFET Generation V Technology Micro6 Package Style Ultra Low Rds on N-Channel MOSFET Voss = 20V ^D S(on) = 0 .1 0 Q Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: PMV170UN 20 V, single N-channel Trench MOSFET 3 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

Contextual Info: SO T2 3 PMV30UN2 20 V, N-channel Trench MOSFET 24 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

Contextual Info: CC256x Bluetooth Smart Ready Controller Data Manual PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

Contextual Info: AH373 INTERNAL PULL-UP HALL EFFECT LATCH Description Pin Assignments AH373 is a single-digital-output Hall-Effect latch sensor with internal TOP View pull-up resistor for high temperature operation. The device includes an on-chip Hall voltage generator for magnetic sensing, an amplifier

Contextual Info: AH373 INTERNAL PULL-UP HALL EFFECT LATCH Description Pin Assignments AH373 is a single-digital-output Hall-Effect latch sensor with internal TOP View pull-up resistor for high temperature operation. The device includes an on-chip Hall voltage generator for magnetic sensing, an amplifier

Contextual Info: AH373 INTERNAL PULL-UP HALL EFFECT LATCH Description Pin Assignments AH373 is a single-digital-output Hall-Effect latch sensor with internal TOP View pull-up resistor for high temperature operation. The device includes an on-chip Hall voltage generator for magnetic sensing, an amplifier

Contextual Info: SO T2 3 PMV20XNE 30 V, N-channel Trench MOSFET 10 November 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET