MARKING CODE FS 1 SOT 323 Search Results

Contextual Info: SIEMENS BCR 112W NPN Silicon Digital Transistor Type Marking O rdering Code Pin Configuration BCR 112W W Fs Q62702-C 2284 1= B Package 2 = E 3 = C SOT-323 M axim um Ratings Param eter Sym bol C ollector-em itter voltage ^CEO 50 C ollector-base voltage ^CBO

C2310

Abstract: transistor Bc 580 c2312 TRANSISTOR bc 847 TRANSISTOR BC 135 TRANSISTOR BC c2308 BC840 transistor marking bc 8 marking 2 AW
Contextual Info: NPN Silicon AF Transistor BC 846 W . BC 850 W Features ● ● ● ● ● For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W, BC 858 W,BC 859 W,

transistor c2311

Abstract: transistor Bc 580 transistor bc 102 transistor BC 194 Transistor MARKING CODE AW BC 104 transistor TRANSISTOR BC 115 marking code fs 1 sot 323 transistor 7s 849 transistor BC 660
Contextual Info: SIEMENS NPN Silicon AF Transistor BC 846 W . BC 850 W Features • For AF input stages and driver applications • • • • High current gain Low coliector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W,

transistor bc 487

Abstract: transistor bc 488 sot-323 transistor marking code 15
Contextual Info: SIEM ENS NPN Silicon AF Transistor BC 846 W . BC 850 W Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W,

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon z Pb-Free Package is Available. L2SA1576AXT1G ORDERING INFORMATION Device 3 Shipping Package L2SA1576AXLT1G SC-70 3000/Tape & Reel L2SA1576AXLT3G SC-70 10000/Tape & Reel 1 2 SC-70/SOT– 323

LT 450 mbr

Contextual Info: SIEMENS NPN Silicon AF Transistor BC 846 W . BC 850 W Features • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30Hz and 15 kHz • Complementary types: BC 856 W, BC 857 W,

BSS84W

Contextual Info: BSS84W P-CHANNEL ENHANCEMENT MODE MOSFET SOT- 323 This is a P-channel, enhancement-mode MOSFET, housed in the industrystandard, SOT-323 SC-70 package. This device is ideal for portable applications where board space is at a premium. 3 FEATURES 2 Low On-Resistance

Marking Code S72

Contextual Info: 2N7002W N-CHANNEL ENHANCEMENT MODE MOSFET SOT- 323 This device is an N-Channel enhancement-mode MOSFET in the industrystandard, small surface mount SOT-323 SC-70 package. This device is ideal for portable applications where board space is at a premium. 3

SOT-323* "power supplies"

Abstract: BSS84W
Contextual Info: BSS84W P-CHANNEL ENHANCEMENT MODE MOSFET SOT- 323 This is a P-channel, enhancement-mode MOSFET, housed in the industrystandard, SOT-323 SC-70 package. This device is ideal for portable applications where board space is at a premium. 3 FEATURES 2 Low On-Resistance

Contextual Info: BSS84W P-CHANNEL ENHANCEMENT MODE MOSFET SOT- 323 This is a P-channel, enhancement-mode MOSFET, housed in the industrystandard, SOT-323 SC-70 package. This device is ideal for portable applications where board space is at a premium. 3 FEATURES 2 Low On-Resistance

Contextual Info: BSS84W P-CHANNEL ENHANCEMENT MODE MOSFET SOT- 323 This is a P-channel, enhancement-mode MOSFET, housed in the industrystandard, SOT-323 SC-70 package. This device is ideal for portable applications where board space is at a premium. 3 FEATURES 2 Low On-Resistance

Contextual Info: BSS84W P-CHANNEL ENHANCEMENT MODE MOSFET SOT- 323 This is a P-channel, enhancement-mode MOSFET, housed in the industrystandard, SOT-323 SC-70 package. This device is ideal for portable applications where board space is at a premium. 3 FEATURES 2 Low On-Resistance

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon F We declare that the material of product compliance with RoHS requirements. FS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon F We declare that the material of product compliance with RoHS requirements. FS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

L2SA1576AQT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

L2SA1576ART1G

Abstract: L2SA1576AST1G
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L2SA1576AQT1G Series z We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION 3 Device Shipping Package L2SA1576AQLT1G Series SC-70 3000/Tape & Reel

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon z We declare that the material of product compliance with RoHS requirements. L2SA1576AQT1G Series ORDERING INFORMATION Device 3 Shipping Package L2SA1576AXLT1G SC-70 3000/Tape & Reel L2SA1576AXLT3G

RFID 5.8Ghz

Abstract: phase shift detector at 2.45GHz rf power detector voltage doubler HSMS-286K ATC100A101MCA50 AN1124 ATC100A1 rfid reader 915MHZ microstrip Antenna 5.8ghz ct 4060
Contextual Info: HSMS-286x Series Surface Mount Microwave Schottky Detector Diodes Data Sheet Description Features Avago’s HSMS‑286x family of DC biased detector diodes have been designed and optim­ized for use from 915 MHz to 5.8 GHz. They are ideal for RF/ID and RF Tag applications

IC RFID 2.45 GHz

Abstract: HSMS-286B HSMS-286K 915 MHz RFID c65 schottky ZZ 6-lead 34 sot-363 rf power amplifier FR4 epoxy 286l AN1124
Contextual Info: HSMS-286x Series Surface Mount Microwave Schottky Detector Diodes Data Sheet Description Features Avago’s HSMS‑286x family of DC biased detector diodes have been designed and optim­ized for use from 915 MHz to 5.8 GHz. They are ideal for RF/ID and RF Tag applications

FR4 substrate fiberglass

Abstract: AV02-1388EN schottky diode application sot-23 diode common anode t4 HSMS-2865 HSMS-286C
Contextual Info: HSMS-286x Series Surface Mount Microwave Schottky Detector Diodes Data Sheet Description Features Avago’s HSMS‑286x family of DC biased detector diodes have been designed and optim­ized for use from 915 MHz to 5.8 GHz. They are ideal for RF/ID and RF Tag applications

TRANSISTOR AH-16

Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

CBF493S

Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

marking 513 SOD-323

Abstract: transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further