B12 GDM
Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL
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GP15M
0621X
SB340
DO-204AC/
DO-204AL
DO-201AD/
P600/MPG06
MPG06
VTS40100CT
B12 GDM
BYS045
GENERAL SEMICONDUCTOR MARKING SJ SMA
s104 68A
BYS-045
kvp 62a
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
BYS209
S4 68A
S104 8a
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GENERAL SEMICONDUCTOR MARKING mJ SMA ED
Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)
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GP15M
1N4005
1N4005/Logo
DO-204AC
24-Jun-04
DO-204AL
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
kvp 62a
kvp 82a
GFM 51A
S4 68A
GENERAL SEMICONDUCTOR MARKING SJ SMA
6V8C
BFM 62A
kvp 75a
GFM 16A
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Untitled
Abstract: No abstract text available
Text: Si5980DU Vishay Siliconix Dual N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 100 0.567 at VGS = 10 V 2.5 2.2 nC PowerPAK ChipFET Dual 1 Marking Code 2 S1 G1 8 CE 3 D1 7 Part # Code G2 D2 6 Lot Traceability and Date Code
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Si5980DU
2002/95/EC
Si5980DUllectual
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: SDB310WAU Semiconductor Schottky Barrier Diode Features • Low VF Max. 0.5V @ 30mA • Low IR ( Max. 1 ㎂ @ 30V) • High reliability Ordering Information Type No. Marking SDB310WAU Package Code MJ SOT-323 Outline Dimensions unit : mm 1.95~2.25 1.15~1.35
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SDB310WAU
OT-323
KSD-3044-000
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Untitled
Abstract: No abstract text available
Text: SDB310WAUF Semiconductor Schottky Barrier Diode Features • Low VF Max. 0.5V @ 30mA • Low IR ( Max. 1 ㎂ @ 30V) • High reliability Ordering Information Type No. SDB310WAUF Marking Package Code MJ SOT-323F Outline Dimensions unit : mm 1.95~2.25 0.40 Max.
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SDB310WAUF
OT-323F
KSD-3045-000
150ents
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st morocco tip122
Abstract: Darlington pair IC schematic morocco tip122 MJD122 MJD122-1 MJD122T4 MJD127 MJD127-1 MJD127T4 TIP122
Text: MJD122-1 / MJD122T4 MJD127-1 / MJD127T4 COMPLEMENTARY POWER DARLINGTON TRANSISTORS Ordering Code MJD122T4 MJD122-1 MJD127T4 MJD127-1 Marking MJD122 MJD122 MJD127 MJD127 Package TO-252 TO-251 TO-252 TO-251 DPAK (IPAK) (DPAK) (IPAK) Shipment Tape & Reel Tube
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MJD122-1
MJD122T4
MJD127-1
MJD127T4
MJD122-1
MJD127-1
MJD122
st morocco tip122
Darlington pair IC schematic
morocco tip122
MJD122
MJD122T4
MJD127
MJD127T4
TIP122
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chn 935
Abstract: ST CHN t4 CHN 640 STMicroelectronics DPAK Marking CODE diode chn 940 morocco tip122 chn 940 935 CHN MJD127 CHN T4
Text: MJD122-1 / MJD122T4 MJD127-1 / MJD127T4 COMPLEMENTARY POWER DARLINGTON TRANSISTORS Ordering Code MJD122T4 MJD122-1 MJD127T4 MJD127-1 Marking MJD122 MJD122 MJD127 MJD127 Package TO-252 TO-251 TO-252 TO-251 DPAK (IPAK) (DPAK) (IPAK) Shipment Tape & Reel Tube
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MJD122-1
MJD122T4
MJD127-1
MJD127T4
MJD122-1
MJD127-1
MJD122
chn 935
ST CHN t4
CHN 640
STMicroelectronics DPAK Marking CODE
diode chn 940
morocco tip122
chn 940
935 CHN
MJD127
CHN T4
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Untitled
Abstract: No abstract text available
Text: 8 7 6 5 3 4 1 2 REVISIONS 5.50 [.217] DEEP THREADED HOLES SEE ORDERING CODE THREAD OPTION F 38.95 1.534 REF 8.90 .350 REV DESCRIPTION DATE APPRD C PROPOSAL DRAWING EAR 13377 OCT01/09 K.L. 2.50 .098 DATE CODE INK MARKING 9.00 .354 18.00 .709 16 PIN VERTICAL
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OCT01/09
OCT16/08
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STK730FC
Abstract: KST-H014-000 STK730 AUK auk stk730
Text: . STK730FC Semiconductor Advanced Power MOSFET Features • Avalanche rugged technology. • Low input capacitance. • Improved gate charge. • Low leakage current : 10uA Max. @ VDS=400V. Ordering Information Type NO. Marking Package Code STK730FC STK730
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STK730FC
STK730
O-220F-3SL
KST-H014-000
STK730FC
KST-H014-000
STK730 AUK
auk stk730
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f 0472 N-Channel MOSFET
Abstract: si5980
Text: Si5980DU Vishay Siliconix Dual N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 100 0.567 at VGS = 10 V 2.5 2.2 nC PowerPAK ChipFET Dual 1 Marking Code 2 S1 G1 CE 3 XXX Lot Traceability and Date Code D1 8 4 S2 D1
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Si5980DU
2002/95/EC
Si5980DU-T1-GE3
18-Jul-08
f 0472 N-Channel MOSFET
si5980
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Untitled
Abstract: No abstract text available
Text: Si5980DU Vishay Siliconix Dual N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 100 0.567 at VGS = 10 V 2.5 2.2 nC PowerPAK ChipFET Dual 1 Marking Code 2 S1 G1 CE 3 XXX Lot Traceability and Date Code D1 8 4 S2 D1
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Si5980DU
2002/95/EC
Si5980DUelectronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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RF NPN POWER TRANSISTOR 2.5 GHZ
Abstract: Q62702-F1575 marking 17 sot343
Text: BFP 136W NPN Silicon RF Transistor • For power amplifier in DECT and PCN systems • fT = 5.5GHz • Gold metalization for high reliability ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration
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OT-343
Q62702-F1575
900MHz
Jan-20-1997
RF NPN POWER TRANSISTOR 2.5 GHZ
Q62702-F1575
marking 17 sot343
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STK630
Abstract: No abstract text available
Text: STK630FC Semiconductor Power MOSFET Features • Avalanche rugged technology. • Low input capacitance. • Low leakage current : 10 ㎂ Max. @ VDS=200V. • Low RDS(on) : 0.30Ω(Typ.) Ordering Information Type NO. Marking Package Code STK630FC STK630
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STK630FC
STK630FC
STK630
O-220F-3SL
KST-H025-002
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Untitled
Abstract: No abstract text available
Text: STK830FC Semiconductor Power MOSFET Features • Avalanche rugged technology. • Low input capacitance. • Low leakage current : 10 ㎂ Max. @ VDS=500V. • Low RDS(ON) : 1.17Ω(Typ.) Ordering Information Type NO. Marking Package Code STK830FC STK830
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STK830FC
STK830
O-220F-3SL
KST-H017-001
18Test
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Transistor BFT 93
Abstract: Transistor BFT 10 Q62702-F1063 MARKING 93 40mAIC BFT93
Text: BFT 93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package
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OT-23
Q62702-F1063
Dec-12-1996
Transistor BFT 93
Transistor BFT 10
Q62702-F1063
MARKING 93
40mAIC
BFT93
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STMicroelectronics DPAK Marking CODE
Abstract: BULD1101E BULD1101ET4
Text: BULD1101ET4 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA • ■ ■ ■ ■ ■ Ordering Code Marking Shipment BULD1101ET4 BULD1101E Tape & Reel HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR
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BULD1101ET4
BULD1101E
O-252)
O-252
STMicroelectronics DPAK Marking CODE
BULD1101E
BULD1101ET4
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auk stk0765
Abstract: STK0765 STK0765F Advanced Power MOSFET KST-H038-000
Text: STK0765F Semiconductor Advanced Power MOSFET Features • Low Crss • Low gate charge. • HIGH BVDSS • Low leakage current Ordering Information Type NO. STK0765F Marking STK0765 Outline Dimensions Package Code TO-220F unit : mm PIN Connections 1. Gate
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STK0765F
STK0765
O-220F
KST-H038-000
auk stk0765
STK0765
STK0765F
Advanced Power MOSFET
KST-H038-000
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Transistor BFT 92W
Abstract: 30227 Transistor BFT 10 transistor BFt 65 Q62702-F1681
Text: BFT 92W PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92W NPN ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration
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OT-323
Q62702-F1681
900MHz
Dec-11-1996
Transistor BFT 92W
30227
Transistor BFT 10
transistor BFt 65
Q62702-F1681
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30227
Abstract: Transistor BFT 10 Q62702-F1062 w1s sot23
Text: BFT 92 PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92P NPN ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration
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OT-23
Q62702-F1062
900MHz
Dec-13-1996
30227
Transistor BFT 10
Q62702-F1062
w1s sot23
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bft93
Abstract: transistor BF 199
Text: SIEMENS BFT93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration
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BFT93
BFT93
Q62702-F1063
OT-23
900MHz
transistor BF 199
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFT93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration
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BFT93
Q62702-F1063
OT-23
235b05
G122211
900MHz
235fc
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OF IC 7909
Abstract: xr 2230 UHF transistor GHz marking 4S SOT343 4 pin dual-emitter BFG25AW marking code C1E marking c1e transistor BFG25W BFG25AWX
Text: Philips Semiconductors Product specification BFG25AW BFG25AW/X; BFG25AW/XR NPN 5 GHz wideband transistor MARKING FEATURES • Low current consumption 100 ^iA to 1 mA TYPE NUMBER • Low noise figure • Gold metallization ensures excellent reliability. CODE
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BFG25AW
BFG25AW/X;
BFG25AW/XR
OT343
OT343R
BFG25AW/X
BFG25AW/XR
BFG25AW
BFG25AW/X
OF IC 7909
xr 2230
UHF transistor GHz
marking 4S SOT343
4 pin dual-emitter
marking code C1E
marking c1e transistor
BFG25W
BFG25AWX
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marking 93A
Abstract: No abstract text available
Text: SIEMENS BFP 93A NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Type
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Q62702-F1144
OT-143
900MHz
marking 93A
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFT92W PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92W NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration
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OCR Scan
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PDF
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BFT92W
Q62702-F1681
OT-323
900MHz
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