G4034
Abstract: Concentrated Photovoltaic solar power NF51A G4634 is814w
Text: SPEC No. G4634 DATE PREPARED BY: FILE No. April. 10. 199~ H. YOSHIOKA ‘& V*ML ISSUE April. 10.1996 .& CHECKED BY: S.TAKEOKA PAGE SHARP CORPORATION DATE April. 10.199 4 282-1 HAJIKAMI,SHINJYOCHO, REPRESENTATIVE DIVISION ENGINEERING DEPT. PHOTOVOLTAICS DIV.
|
Original
|
PDF
|
G4634
NE51A81E
NE51A81F
G4034
G4034
Concentrated Photovoltaic solar power
NF51A
G4634
is814w
|
Untitled
Abstract: No abstract text available
Text: V048F080T030 V048F080M030 VTM VTMTM Transformer • 48 V to 8 V V•I ChipTM Converter • 125°C operation TJ • 30 A (45.0 A for 1 ms) • 1 µs transient response • High density – 813 W/in3 • 3.5 million hours MTBF • Small footprint – 210 W/in2
|
Original
|
PDF
|
V048F080T030
V048F080M030
V048F080T030
|
Untitled
Abstract: No abstract text available
Text: V048F160T015 V048F160M015 VTM VTMTM Transformer • 48 V to 16 V V•I ChipTM Converter • 125°C operation TJ • 15 A (22.5 A for 1 ms) • 1 µs transient response • High density – 813 W/in3 • 3.5 million hours MTBF • Small footprint – 210 W/in2
|
Original
|
PDF
|
V048F160T015
V048F160M015
V048F160T015
|
Untitled
Abstract: No abstract text available
Text: V048F030T070 V048F030M070 VTM VTMTM Transformer • 48 V to 3 V V•I ChipTM Converter • 125°C operation TJ • 70 A (105.0 A for 1 ms) • 1 µs transient response • High density – 237 A/in3 • 3.5 million hours MTBF • Small footprint – 60 A/in2
|
Original
|
PDF
|
V048F030T070
V048F030M070
V048F030T070
|
Untitled
Abstract: No abstract text available
Text: V048F096T025 V048F096M025 VTM VTMTM Transformer • 48 V to 9.6 V V•I ChipTM Converter • 125°C operation TJ • 25 A (37.5 A for 1 ms) • 1 µs transient response • High density – 813 W/in3 • 3.5 million hours MTBF • Small footprint – 210 W/in2
|
Original
|
PDF
|
V048F096T025
V048F096M025
V048F096T025
|
Untitled
Abstract: No abstract text available
Text: V048F015T100 V048F015M100 VTM VTMTM Transformer • 48 V to 1.5 V V•I ChipTM Converter • 125°C operation TJ • 100.0 A (150.0 A for 1 ms) • 1 µs transient response • High density – 339 A/in3 • 3.5 million hours MTBF • Small footprint – 80 A/in2
|
Original
|
PDF
|
V048F015T100
V048F015M100
V048F015T100
|
Untitled
Abstract: No abstract text available
Text: V048F040T050 V048F040M050 VTM VTMTM Transformer • 48 V to 4 V V•I ChipTM Converter • 125°C operation TJ • 50 A (75.0 A for 1 ms) • 1 µs transient response • High density – 169 A/in3 • 3.5 million hours MTBF • Small footprint – 40 A/in2
|
Original
|
PDF
|
V048F040T050
V048F040M050
V048F040T050
|
Untitled
Abstract: No abstract text available
Text: V048F020T080 V048F020M080 VTM VTMTM Transformer • 48 V to 2 V V•I ChipTM Converter • 125°C operation TJ • 80.0 A (120.0 A for 1 ms) • 1 µs transient response • High density – 271 A/in3 • 3.5 million hours MTBF • Small footprint – 70 A/in2
|
Original
|
PDF
|
V048F020T080
V048F020M080
V048F020T080
|
Untitled
Abstract: No abstract text available
Text: V048F120T025 V048F120M025 VTM VTMTM Transformer • 48 V to 12 V V•I ChipTM Converter • 125°C operation TJ • 25 A (37.5 A for 1 ms) • 1 µs transient response • High density – 1017 W/in3 • 3.5 million hours MTBF • Small footprint – 260 W/in2
|
Original
|
PDF
|
V048F120T025
V048F120M025
V048F120T025
|
Untitled
Abstract: No abstract text available
Text: V048F320T009 V048F320M009 VTM VTMTM Transformer • 48 V to 32 V V•I ChipTM Converter • 125°C operation TJ • 9.4 A (14.1 A for 1 ms) • 1 µs transient response • High density – 1017 W/in3 • 3.5 million hours MTBF • Small footprint – 260 W/in2
|
Original
|
PDF
|
V048F320T009
V048F320M009
V048F320T009
|
Untitled
Abstract: No abstract text available
Text: V048F060T040 V048F060M040 VTM VTMTM Transformer • 48 V to 6 V V•I ChipTM Converter • 125°C operation TJ • 40 A (60.0 A for 1 ms) • 1 µs transient response • High density – 813 W/in3 • 3.5 million hours MTBF • Small footprint – 210 W/in2
|
Original
|
PDF
|
V048F060T040
V048F060M040
V048F060T040
|
V048F320T009
Abstract: D496 D505 V048F320M009
Text: V048F320T009 V048F320M009 VTM VTMTM Transformer • 48 V to 32 V V•I ChipTM Converter • 125°C operation TJ • 9.4 A (14.1 A for 1 ms) • 1 µs transient response • High density – 1017 W/in3 • 3.5 million hours MTBF • Small footprint – 260 W/in2
|
Original
|
PDF
|
V048F320T009
V048F320M009
V048F320T009
D496
D505
V048F320M009
|
B048F060M24
Abstract: B048F060T24 D496 D505 709m
Text: B048F060T24 B048F060M24 BCMTM Bus Converter • 48 V to 6 V V•I ChipTM Converter • Typical efficiency 95% • 240 Watt 360 Watt for 1 ms • 125°C operation (TJ) • High density – 813 W/in3 • <1 µs transient response • Small footprint – 210
|
Original
|
PDF
|
B048F060T24
B048F060M24
B048F060M24
B048F060T24
D496
D505
709m
|
D496
Abstract: D505 V048F030T070
Text: V048F030T070 V048F030M070 VTM VTMTM Transformer • 48 V to 3 V V•I ChipTM Converter • 125°C operation TJ • 70 A (105.0 A for 1 ms) • 1 µs transient response • High density – 237 A/in3 • 3.5 million hours MTBF • Small footprint – 60 A/in2
|
Original
|
PDF
|
V048F030T070
V048F030M070
V048F030T070
D496
D505
|
|
V048F040T050
Abstract: V048F040M050 D496 D505 VTM48EF040T050A00 VTM*48
Text: Not recommended for New Designs Replaced by VTM48EF040T050A00 V048F040T050 V048F040M050 VTM VTMTM Transformer • 48 V to 4 V V•I ChipTM Converter • 125°C operation TJ • 50 A (75.0 A for 1 ms) • 1 µs transient response • High density – 169 A/in3
|
Original
|
PDF
|
VTM48EF040T050A00
V048F040T050
V048F040M050
V048F040T050
V048F040M050
D496
D505
VTM48EF040T050A00
VTM*48
|
Untitled
Abstract: No abstract text available
Text: B048F015T14 B 048 F 015 M 14 BCMTM Bus Converter • 48 V to 1.5 V V•I Chip Bus Converter • Typical efficiency 91% • 135 Watt 203 Watt for 1 ms • 125°C operation (TJ) • High density – 305 A/in3 • <1 µs transient response • Small footprint – 80 A/in2
|
Original
|
PDF
|
B048F015T14
B048F015T14
|
D496
Abstract: D505
Text: B048F015T14 B048F015M14 BCMTM Bus Converter • 48 V to 1.5 V V•I ChipTM Converter • Typical efficiency 91% • 135 Watt 203 Watt for 1 ms • 125°C operation (TJ) • High density – 305 A/in3 • <1 µs transient response • Small footprint – 80
|
Original
|
PDF
|
B048F015T14
B048F015M14
D496
D505
|
VTM 48
Abstract: D496 D505 V048F480M006 V048F480T006 J1 DIODE
Text: V048F480T006 V048F480M006 VTM VTMTM Transformer • 48 V to 48 V V•I ChipTM Converter • 125°C operation TJ • 6.3 A (9.4 A for 1 ms) • 1 µs transient response • High density – 1017 W/in3 • 3.5 million hours MTBF • Small footprint – 260 W/in2
|
Original
|
PDF
|
V048F480T006
V048F480M006
V048F480T006
VTM 48
D496
D505
V048F480M006
J1 DIODE
|
D496
Abstract: D505
Text: B048F320T30 B048F320M30 BCMTM Bus Converter • 48 V to 32 V V•I ChipTM Converter • Typical efficiency 96% • 300 Watt 450 Watt for 1 ms • 125°C operation (TJ) • High density – 1017 W/in3 • <1 µs transient response • Small footprint – 260
|
Original
|
PDF
|
B048F320T30
B048F320M30
D496
D505
|
V048F060T040
Abstract: D496 D505 V048F060M040
Text: V048F060T040 V048F060M040 VTM VTMTM Transformer • 48 V to 6 V V•I ChipTM Converter • 125°C operation TJ • 40 A (60.0 A for 1 ms) • 1 µs transient response • High density – 813 W/in3 • 3.5 million hours MTBF • Small footprint – 210 W/in2
|
Original
|
PDF
|
V048F060T040
V048F060M040
V048F060T040
D496
D505
V048F060M040
|
B048F240M30
Abstract: D496 D505 B048F240T30
Text: B048F240T30 B048F240M30 BCMTM Bus Converter • 48 V to 24 V V•I ChipTM Converter • Typical efficiency 96% • 300 Watt 450 Watt for 1 ms • 125°C operation (TJ) • High density – 1017 W/in3 • <1 µs transient response • Small footprint – 260
|
Original
|
PDF
|
B048F240T30
B048F240M30
B048F240M30
D496
D505
B048F240T30
|
b 103g
Abstract: DB10XG marking CODE GA DB101G DB107G DB106G
Text: TAIWAN SEMICONDUCTOR RoHS DB101G- DB107G Single Phase 1.0 A M R Glass Passivated Bridge Rectifiers Q B C O M P L IA N C E A r - + .255 6.5 ,?45(ß.?) .2a5(7.2¿) Features <> <> UL Recognized File # E-96005 Glass passivated junction Ideal fo r printed circuit board
|
OCR Scan
|
PDF
|
DB101G
DB107G
E-96C05
/0-375n
MIL-STD-202.
DB107G)
b 103g
DB10XG
marking CODE GA
DB107G
DB106G
|
control code data sending processing for remote
Abstract: No abstract text available
Text: APPLICATION NOTE 144 DATA FAX COMMANDS CLASS 1 FOR CH179X COMPONENTS 5. FAX CLASS 1 COMMANDS 5.1. FAX I/O PROCESSING The fax I/O interface supports asynchronous serial and parallel interfaces. The interface rate is 19200 bps. The character format is 8 bits data, no parity, and 1 stop bit. Start and stop elements are removed from the transmit data
|
OCR Scan
|
PDF
|
CH179X
control code data sending processing for remote
|
marking code S3j
Abstract: SMC marking ED
Text: TAIWAN SEMICONDUCTOR E tò S 3A - S3M 3.0 AMPS. Surface Mount Rectifiers R oH S COMPLIANCE SMC/DO-214AB n i JT E[ Features -c- •> ■> *> *> -5-c- ■> *> ■> ■> “ For surface mounted application Glass passivated junction chip. Low forward voltage drop
|
OCR Scan
|
PDF
|
SMC/DO-214AB
V9L17VEE
SFT71M=
marking code S3j
SMC marking ED
|