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    MARKING CODE N3T Search Results

    MARKING CODE N3T Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54LS42/BEA Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy

    MARKING CODE N3T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    G4034

    Abstract: Concentrated Photovoltaic solar power NF51A G4634 is814w
    Text: SPEC No. G4634 DATE PREPARED BY: FILE No. April. 10. 199~ H. YOSHIOKA ‘& V*ML ISSUE April. 10.1996 .& CHECKED BY: S.TAKEOKA PAGE SHARP CORPORATION DATE April. 10.199 4 282-1 HAJIKAMI,SHINJYOCHO, REPRESENTATIVE DIVISION ENGINEERING DEPT. PHOTOVOLTAICS DIV.


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    PDF G4634 NE51A81E NE51A81F G4034 G4034 Concentrated Photovoltaic solar power NF51A G4634 is814w

    Untitled

    Abstract: No abstract text available
    Text: V048F080T030 V048F080M030 VTM VTMTM Transformer • 48 V to 8 V V•I ChipTM Converter • 125°C operation TJ • 30 A (45.0 A for 1 ms) • 1 µs transient response • High density – 813 W/in3 • 3.5 million hours MTBF • Small footprint – 210 W/in2


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    PDF V048F080T030 V048F080M030 V048F080T030

    Untitled

    Abstract: No abstract text available
    Text: V048F160T015 V048F160M015 VTM VTMTM Transformer • 48 V to 16 V V•I ChipTM Converter • 125°C operation TJ • 15 A (22.5 A for 1 ms) • 1 µs transient response • High density – 813 W/in3 • 3.5 million hours MTBF • Small footprint – 210 W/in2


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    PDF V048F160T015 V048F160M015 V048F160T015

    Untitled

    Abstract: No abstract text available
    Text: V048F030T070 V048F030M070 VTM VTMTM Transformer • 48 V to 3 V V•I ChipTM Converter • 125°C operation TJ • 70 A (105.0 A for 1 ms) • 1 µs transient response • High density – 237 A/in3 • 3.5 million hours MTBF • Small footprint – 60 A/in2


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    PDF V048F030T070 V048F030M070 V048F030T070

    Untitled

    Abstract: No abstract text available
    Text: V048F096T025 V048F096M025 VTM VTMTM Transformer • 48 V to 9.6 V V•I ChipTM Converter • 125°C operation TJ • 25 A (37.5 A for 1 ms) • 1 µs transient response • High density – 813 W/in3 • 3.5 million hours MTBF • Small footprint – 210 W/in2


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    PDF V048F096T025 V048F096M025 V048F096T025

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    Abstract: No abstract text available
    Text: V048F015T100 V048F015M100 VTM VTMTM Transformer • 48 V to 1.5 V V•I ChipTM Converter • 125°C operation TJ • 100.0 A (150.0 A for 1 ms) • 1 µs transient response • High density – 339 A/in3 • 3.5 million hours MTBF • Small footprint – 80 A/in2


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    PDF V048F015T100 V048F015M100 V048F015T100

    Untitled

    Abstract: No abstract text available
    Text: V048F040T050 V048F040M050 VTM VTMTM Transformer • 48 V to 4 V V•I ChipTM Converter • 125°C operation TJ • 50 A (75.0 A for 1 ms) • 1 µs transient response • High density – 169 A/in3 • 3.5 million hours MTBF • Small footprint – 40 A/in2


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    PDF V048F040T050 V048F040M050 V048F040T050

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    Abstract: No abstract text available
    Text: V048F020T080 V048F020M080 VTM VTMTM Transformer • 48 V to 2 V V•I ChipTM Converter • 125°C operation TJ • 80.0 A (120.0 A for 1 ms) • 1 µs transient response • High density – 271 A/in3 • 3.5 million hours MTBF • Small footprint – 70 A/in2


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    PDF V048F020T080 V048F020M080 V048F020T080

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    Abstract: No abstract text available
    Text: V048F120T025 V048F120M025 VTM VTMTM Transformer • 48 V to 12 V V•I ChipTM Converter • 125°C operation TJ • 25 A (37.5 A for 1 ms) • 1 µs transient response • High density – 1017 W/in3 • 3.5 million hours MTBF • Small footprint – 260 W/in2


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    PDF V048F120T025 V048F120M025 V048F120T025

    Untitled

    Abstract: No abstract text available
    Text: V048F320T009 V048F320M009 VTM VTMTM Transformer • 48 V to 32 V V•I ChipTM Converter • 125°C operation TJ • 9.4 A (14.1 A for 1 ms) • 1 µs transient response • High density – 1017 W/in3 • 3.5 million hours MTBF • Small footprint – 260 W/in2


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    PDF V048F320T009 V048F320M009 V048F320T009

    Untitled

    Abstract: No abstract text available
    Text: V048F060T040 V048F060M040 VTM VTMTM Transformer • 48 V to 6 V V•I ChipTM Converter • 125°C operation TJ • 40 A (60.0 A for 1 ms) • 1 µs transient response • High density – 813 W/in3 • 3.5 million hours MTBF • Small footprint – 210 W/in2


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    PDF V048F060T040 V048F060M040 V048F060T040

    V048F320T009

    Abstract: D496 D505 V048F320M009
    Text: V048F320T009 V048F320M009 VTM VTMTM Transformer • 48 V to 32 V V•I ChipTM Converter • 125°C operation TJ • 9.4 A (14.1 A for 1 ms) • 1 µs transient response • High density – 1017 W/in3 • 3.5 million hours MTBF • Small footprint – 260 W/in2


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    PDF V048F320T009 V048F320M009 V048F320T009 D496 D505 V048F320M009

    B048F060M24

    Abstract: B048F060T24 D496 D505 709m
    Text: B048F060T24 B048F060M24 BCMTM Bus Converter • 48 V to 6 V V•I ChipTM Converter • Typical efficiency 95% • 240 Watt 360 Watt for 1 ms • 125°C operation (TJ) • High density – 813 W/in3 • <1 µs transient response • Small footprint – 210


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    PDF B048F060T24 B048F060M24 B048F060M24 B048F060T24 D496 D505 709m

    D496

    Abstract: D505 V048F030T070
    Text: V048F030T070 V048F030M070 VTM VTMTM Transformer • 48 V to 3 V V•I ChipTM Converter • 125°C operation TJ • 70 A (105.0 A for 1 ms) • 1 µs transient response • High density – 237 A/in3 • 3.5 million hours MTBF • Small footprint – 60 A/in2


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    PDF V048F030T070 V048F030M070 V048F030T070 D496 D505

    V048F040T050

    Abstract: V048F040M050 D496 D505 VTM48EF040T050A00 VTM*48
    Text: Not recommended for New Designs Replaced by VTM48EF040T050A00 V048F040T050 V048F040M050 VTM VTMTM Transformer • 48 V to 4 V V•I ChipTM Converter • 125°C operation TJ • 50 A (75.0 A for 1 ms) • 1 µs transient response • High density – 169 A/in3


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    PDF VTM48EF040T050A00 V048F040T050 V048F040M050 V048F040T050 V048F040M050 D496 D505 VTM48EF040T050A00 VTM*48

    Untitled

    Abstract: No abstract text available
    Text: B048F015T14 B 048 F 015 M 14 BCMTM Bus Converter • 48 V to 1.5 V V•I Chip Bus Converter • Typical efficiency 91% • 135 Watt 203 Watt for 1 ms • 125°C operation (TJ) • High density – 305 A/in3 • <1 µs transient response • Small footprint – 80 A/in2


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    PDF B048F015T14 B048F015T14

    D496

    Abstract: D505
    Text: B048F015T14 B048F015M14 BCMTM Bus Converter • 48 V to 1.5 V V•I ChipTM Converter • Typical efficiency 91% • 135 Watt 203 Watt for 1 ms • 125°C operation (TJ) • High density – 305 A/in3 • <1 µs transient response • Small footprint – 80


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    PDF B048F015T14 B048F015M14 D496 D505

    VTM 48

    Abstract: D496 D505 V048F480M006 V048F480T006 J1 DIODE
    Text: V048F480T006 V048F480M006 VTM VTMTM Transformer • 48 V to 48 V V•I ChipTM Converter • 125°C operation TJ • 6.3 A (9.4 A for 1 ms) • 1 µs transient response • High density – 1017 W/in3 • 3.5 million hours MTBF • Small footprint – 260 W/in2


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    PDF V048F480T006 V048F480M006 V048F480T006 VTM 48 D496 D505 V048F480M006 J1 DIODE

    D496

    Abstract: D505
    Text: B048F320T30 B048F320M30 BCMTM Bus Converter • 48 V to 32 V V•I ChipTM Converter • Typical efficiency 96% • 300 Watt 450 Watt for 1 ms • 125°C operation (TJ) • High density – 1017 W/in3 • <1 µs transient response • Small footprint – 260


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    PDF B048F320T30 B048F320M30 D496 D505

    V048F060T040

    Abstract: D496 D505 V048F060M040
    Text: V048F060T040 V048F060M040 VTM VTMTM Transformer • 48 V to 6 V V•I ChipTM Converter • 125°C operation TJ • 40 A (60.0 A for 1 ms) • 1 µs transient response • High density – 813 W/in3 • 3.5 million hours MTBF • Small footprint – 210 W/in2


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    PDF V048F060T040 V048F060M040 V048F060T040 D496 D505 V048F060M040

    B048F240M30

    Abstract: D496 D505 B048F240T30
    Text: B048F240T30 B048F240M30 BCMTM Bus Converter • 48 V to 24 V V•I ChipTM Converter • Typical efficiency 96% • 300 Watt 450 Watt for 1 ms • 125°C operation (TJ) • High density – 1017 W/in3 • <1 µs transient response • Small footprint – 260


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    PDF B048F240T30 B048F240M30 B048F240M30 D496 D505 B048F240T30

    b 103g

    Abstract: DB10XG marking CODE GA DB101G DB107G DB106G
    Text: TAIWAN SEMICONDUCTOR RoHS DB101G- DB107G Single Phase 1.0 A M R Glass Passivated Bridge Rectifiers Q B C O M P L IA N C E A r - + .255 6.5 ,?45(ß.?) .2a5(7.2¿) Features <> <> UL Recognized File # E-96005 Glass passivated junction Ideal fo r printed circuit board


    OCR Scan
    PDF DB101G DB107G E-96C05 /0-375n MIL-STD-202. DB107G) b 103g DB10XG marking CODE GA DB107G DB106G

    control code data sending processing for remote

    Abstract: No abstract text available
    Text: APPLICATION NOTE 144 DATA FAX COMMANDS CLASS 1 FOR CH179X COMPONENTS 5. FAX CLASS 1 COMMANDS 5.1. FAX I/O PROCESSING The fax I/O interface supports asynchronous serial and parallel interfaces. The interface rate is 19200 bps. The character format is 8 bits data, no parity, and 1 stop bit. Start and stop elements are removed from the transmit data


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    PDF CH179X control code data sending processing for remote

    marking code S3j

    Abstract: SMC marking ED
    Text: TAIWAN SEMICONDUCTOR E tò S 3A - S3M 3.0 AMPS. Surface Mount Rectifiers R oH S COMPLIANCE SMC/DO-214AB n i JT E[ Features -c- •> ■> *> *> -5-c- ■> *> ■> ■> “ For surface mounted application Glass passivated junction chip. Low forward voltage drop


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    PDF SMC/DO-214AB V9L17VEE SFT71M= marking code S3j SMC marking ED