MARKING CODE T1S Search Results

Mpsa42

Abstract: mpsa 102
Contextual Info: SIEMENS NPN Silicon High-Voltage Transistors MPSA 42 MPSA 43 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: MPSA 92 MPSA 93 PNP Type MPSA 42 MPSA 43 Marking MPSA 42 MPSA 43 Ordering Code Pin Configur ation

itt ol 170

Contextual Info: HAL114 ADVANCE INFORMATION Hall Effect Sensor 1C in CMOS technology Marking Code Type Tern perature Rimge Features: A - operates from 4.5 V to 24 V supply voltage HAL114S HAL114UA - overvoltage and reverse-voltage protection 114A 114E 114C - short-circuit protected open-drain output switch

smd marking g12

Abstract: smd marking g24
Contextual Info: SMD TVS Arrays Multiple Terminals Part No. Marking Code SMD TVS PPPM(W) VRWM(V) VBR(V) Max. Clamping Voltage @ IPPM 8x20µs VC(V) Peak Max Power Min. Dissssipa- Reverse Breakdown Stand-Off tion @ Voltage Voltage 8x20µs Peak Pulse Current Off-State Capacitance Pinout Package

8065S

Contextual Info: SIPMOS Small-Signal Transistor • • • • • • • BSS 149 Vx 200 V /D 0.35 A ^DS on 3-5 N channel Depletion mode High dynamic resistance Available grouped in Vqs^ Type Ordering Code BSS 149 Q67000-S252 Tape and Reel information Pin Gonfigu ration Marking Package

Contextual Info: BF994S PHILIPS INTERNATIONAL SbE D 711002b 003407b T1S IPHIN FOR D ETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR D ATASHEET T-?«r-z7 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and

BF994S marking code

Abstract: BF994S MOSFET Tetrode
Contextual Info: J PHILIPS INTERNATIONAL SbE D BF994S 711002t. 0 0 3 4 0 7 b T1S • PHIN FOR D E T A IL E D IN FO R M A TIO N SEE THE LATEST ISSUE OF HANDBO OK SC07 OR D ATASHEET T -? jr-z7 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in aplasticSOT143 m icrom iniature envelope w ith source and

lot date code panasonic

Abstract: lh 3a05 ELL8UV221M 260-D
Contextual Info: DIGI KEY Issued Date No. 23/08/2005 T11S-05017 REVISION INFORMATION LETTER FO R PROD U CT SPECIFICATION FO R INFORMATION Part Name CHIP CHOKE COIL ELL8UV00DD Part No. Our Part No. S ^ T n n il [ ELL8UVDDD0 ] Used Model or Spec.No ís M J S l T1S-05013A Reasons for

Contextual Info: PJSD05 SERIES 400W LOW CLAMPING VOLTAGE SINGLE TVS FOR PROTECTION This TVS/Zener Series has been designed to Protect Sensitive Equipment against ESD and to prevent Latch-Up events in very sensitive CMOS circuitry operating at 5V, 12V, 15V and 24Vdc .These devices come in an industry standard SOD123

16F685

Abstract: PIC16F687 PIC16F690 PWM c programming
Contextual Info: PIC16F685/687/689/690 PIC16F685/687/689/690 Rev. A Silicon/Data Sheet Errata The PIC16F685/687/689/690 parts you have received conform functionally to the Device Data Sheet DS41262A , except for the anomalies described below. 1.4 After the auto-baud Sync character has been

PIC16C774

Abstract: transistor D400 transistor D400 pin diagram transistor equivalents for d407 D005 D040 D420 PIC16C77X
Contextual Info: PIC16C774 PIC16C774 Rev. B Silicon Errata Sheet The PIC16C774 Rev. B parts you have received conform functionally to the Device Data Sheet (DS30275A), except for the anomalies described below. 2. Module: PORTE The minimum VIH specification for PORTE (parameter D040) is 2.2 volts. The maximum VIL

PIC16C773

Abstract: D400 transistor transistor D400 circuit diagram application DS30275A marking code jw analog transistor D400 D005 D420 PIC16C77X PIC16LC773
Contextual Info: PIC16C773 PIC16C773 Rev. B Silicon Errata Sheet The PIC16C773 Rev. B parts you have received conform functionally to the Device Data Sheet (DS30275A), except for the anomalies described below. 2. Module: BOR The Brown-Out Reset module’s selection ranges

frequency counter using PIC16F73

Abstract: microchip pic16f73 interrupt example in C PIC16F73 pin diagram PIC16F73 pic16f74 application note cpu crystal oscillator module ttl pic16f74 marking code ra5 capacitor PIC16F76 PIC16F7X
Contextual Info: PIC16F73/74/76/77 PIC16F73/74/76/77 Rev. B1 Silicon/Data Sheet Errata The PIC16F73/74/76/77 Rev. B1 parts you have received conform functionally to the Device Data Sheet DS30325B , except for the anomalies described below. All the problems listed here will be addressed in future

diode MARKING CODE A9

Abstract: 02CZ6 02CZ2 s32 schottky diode SS322 46/SMC 5/L4F1 DIODE List of Marking
Contextual Info: 4. List of Principal Characteristics of Diodes 4. List o f Principal C h a r a c t e r istic s o f D io d e s * S c h o ttk y b a r r i e r diode. 59 4. List of Principal Characteristics o f Diodes U nit : mm u se S-M IN I U SM SS M 1 1 125*8:i s 5 H- pl *il"

sandisk 32GB Nand flash

Abstract: sDED7-256M-N9Y sded7-256m-n9 X-GOLD 223 infineon x-gold MD2534-D2G-X-P SDED5-001G-NA sandisk mDOC H3 SanDisk SDED7-256M-N9 MD2534-D1G-X-P
Contextual Info: mDOC H3 Embedded Flash Drive EFD featuring Embedded TrueFFS Flash Management Software Data Sheet, November 2007 HIGHLIGHTS mDOC H3 is an Embedded Flash Drive (EFD) designed for mobile handsets and consumer electronics devices. mDOC H3 is the new generation of SanDisk’s successful mDOC

Contextual Info: PJSLC05 SERIES ULTRA LOW CAPACITANCE SINGLE TVS FOR HIGH SPEED DATA LINES This Transient Voltage Suppressor is intended to Protect Sensitive Equipment against Electrostatic Discharge and Transient Events as well to offer a Miminum insertion loss in high speed data communication transmission line ports used in Portable Consumer,Computing

sandisk 32GB Nand flash

Abstract: SDED7-256M-N9 SDED7-256M-N9Y MD2534-D1G-X-P SDED5-512M-N9T SDED7-256M-N9T SDED5-002G-NC sded5-004g-ncy SanDisk SDED7-256M-N9 MD2534-D2G-X-P
Contextual Info: mDOC H3 Embedded Flash Drive EFD featuring Embedded TrueFFS Flash Management Software Data Sheet, May 2008 HIGHLIGHTS mDOC H3 is an Embedded Flash Drive (EFD) designed for mobile handsets and consumer electronics devices. mDOC H3 is the new generation of SanDisk’s successful mDOC

sandisk 32GB Nand flash

Abstract: SDED7-256M-N9 MD2533-D8G-X-P X-GOLD 110 NAND flash 64gb md2533-d16g-x-p MD2534-D1G-X-P sded5-004g-ncy mdoc h3 SDED5-002G
Contextual Info: mDOC H3 Embedded Flash Drive EFD featuring Embedded TrueFFS Flash Management Software Data Sheet, May 2007 HIGHLIGHTS mDOC H3 is an Embedded Flash Drive (EFD) designed for mobile handsets and consumer electronics devices. mDOC H3 is the new generation of SanDisk‟s successful mDOC

SMD T6s

Abstract: SMD code T6s
Contextual Info: SMD TVS Arrays Two Terminals SMD TVS PPPM(W) VRWM(V) VBR(V) Max. Clamping Voltage @ IPPM 8x20µs VC(V) P 5 T 6 50 50 50 50 3.3 5 3.3 5 4.2 5.8 4.2 5.8 - - 25 15(Typ. ) Uni Uni Bi Bi TVD03WU TVD05WU TVD08WU TVD12WU TVD15WU TVD24WU TVD36WU GS GT GU GV GW GX

REF-02ARC

Abstract: 5962R8551401VHA REF02AJ8 F02A REF-02A CDFP2-F10 CQCC1-N20 GDFP1-F10 REF02 REF02A
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Change to military drawing format. Changes to output adjustment range. Add conditions tor load regulation test at -5!?C and +125°C. Change group A subgroups for load regulation and line regulation tests, and output voltage

Contextual Info: 0 0 2 4 ^ 1T3 « A P X N AMER PHILIPS/DISCRETE BCX54 BCX55 BCX56 L7E D ; v SILICON PLANAR EPITAXIAL TRANSISTORS Medium power n-p-n transistors in a miniature plastic envelope intended for applications in thick and thin-film circuits. These transistors are intended for general purposes as well as for use in driver stages

MD80C31BH

Abstract: 5962-8506401MQA MD80C31 MR80C31BH MD80C31B 5962-8506403MQA 5962-8506401MYA 5962-8506401MXA MR80C31 CC-416
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED Add device types 03 and 04. Add test circuit. Editorial changes thougout. 90-03-05 W. Heckman Change 1.3. Convert to one part-one part number format. 91-02-08 W. Heckman Changes in accordance with NOR 5962-R323-92

Contextual Info: SIEMENS Schnelle GaAIAs-IR-Lumineszenzdiode High-Speed GaAIAs Infrared Emitter SFH 4391 Vorläufige Daten / Preliminary Data Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale • Hohe Pulsleistung sowie hoher Gesamtstrah­

t1s sot23

Abstract: PJSLC05 PJSLC12 PJSLC15 PJSLC24
Contextual Info: PJSLC05 SERIES ULTRA LOW CAPACITANCE SINGLE TVS FOR HIGH SPEED DATA LINES 3 This Transient Voltage Suppressor is intended to Protect Sensitive Equipment against Electrostatic Discharge and Transient Events as well to offer a Miminum insertion loss in high speed data communication transmission line ports used

marking code ra5 capacitor

Abstract: hms81c1716b
Contextual Info: MAGNACHIP SEMICONDUCTOR LTD. 8-BIT SINGLE-CHIP MICROCONTROLLERS HMS81C1808B/16B HMS81C1708B/16B HMS81C1608B/16B HMS81C1508B/16B HMS81C1404B/08B/16B User’s Manual Ver. 1.02 REVISION HISTORY VERSION 1.02 (SEP. 2004) This book The company name, Hynix Semiconductor Inc. changed to MagnaChip Semiconductor Ltd.