T85/55
Abstract: 6c marking 24vdc 125v 15a led matrix 8 8 one colour KG41 KG44 Si 6823
Text: KG series Power rocker switches Distinctive features and specifications ❑ Illuminated or non-illuminated ❑ Protected rocker ❑ Sealed to IP 65 ❑ Laser marking ❑ VDE EN 61058-1 approved ELECTRICAL SPECIFICATIONS D MATERIALS • Currrent/voltage rating :
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12VDC,
24VDC,
250VAC
14VDC
T85/55
6c marking
24vdc 125v 15a
led matrix 8 8 one colour
KG41
KG44
Si 6823
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t85/55
Abstract: KG35 marking code KG35 KG44-1R 24vdc to 12vdc LED driver KG44 KG41 led matrix 8 8 one colour KG49 KG46
Text: KG series Power rocker switches Distinctive features and specifications ❑ Illuminated or non-illuminated ❑ Protected rocker ❑ Sealed to IP 65 ❑ Laser marking ❑ VDE EN 61058-1 approved ELECTRICAL SPECIFICATIONS D MATERIALS • Currrent/voltage rating :
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12VDC,
24VDC,
250VAC
14VDC
t85/55
KG35
marking code KG35
KG44-1R
24vdc to 12vdc LED driver
KG44
KG41
led matrix 8 8 one colour
KG49
KG46
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Untitled
Abstract: No abstract text available
Text: Pomona Model 4590 Mounting Base, Triple Banana Jack For Standard Banana Jack MATERIALS: Body: Polycarbonate Color: Black Marking : Pomona Electronics RATINGS: Operating Temperature: +115° C. +239° F. Max. ORDERING INFORMATION: Model 4590-* *=Color, -0 Black
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2005\d4590
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D4555
Abstract: No abstract text available
Text: Pomona Model 4555 Do-It-Yourself Minigrabber® Test Clip MATERIALS: Body: Contact – Gold Plated Beryllium Copper, Spring – Stainless Steel Insulation: Glass filled nylon. Marking: “Pomona 4555” RATINGS: Voltage: Hand-held testing: 30VAC/60VDC Max.
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30VAC/60VDC
00\D4555
D4555
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D4555
Abstract: minigrabber
Text: Pomona Model 4555 Do-It-Yourself Minigrabber® Test Clip MATERIALS: Body: Contact – Gold Plated Beryllium Copper, Spring – Stainless Steel Insulation: Glass filled nylon. Marking: “Pomona 4555” RATINGS: Voltage: Hand-held testing: 30VAC/60VDC Max.
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30VAC/60VDC
6/9/99trolled
\Release\DataSheets\FlukeDataSheet\d4555
D4555
minigrabber
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C10-A10FX
Abstract: C12-A21BX 220v ac voltage stabilizer circuit C12-A21FX C10-A10BX solid state 220v ac stabilizer 220V AC Automatic Voltage stabilizer transistor A1232 releco relay 24v dc 10a C12-A21X
Text: IRC Interface and general application The new IRC relays Button and lockable lever push-to-test, lift-to-lock Mechanical and LED indication as standard Coil voltage marked on the top of the relay Marking label Optional in-built suppressors circuits and bridge rectifier for AC/DC relays
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E-28923
C10-A10FX
C12-A21BX
220v ac voltage stabilizer circuit
C12-A21FX
C10-A10BX
solid state 220v ac stabilizer
220V AC Automatic Voltage stabilizer
transistor A1232
releco relay 24v dc 10a
C12-A21X
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Untitled
Abstract: No abstract text available
Text: 3 Phase Bridge Diode Large I o Single In-line Package OUTLINE D45XT80 Unit : mm Weight : 22g typ. Package TSB-5PIN 800V 45A 品名 Type No. • • SIP • UL E142422 • ＋ ① ~∼ ∼ ② ③④ − ⑤ ＋ SHINDENGEN D45XT 80 0264 ∼ ∼ 27 ∼ −
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D45XT80
E142422
D45XT
J534-1
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Untitled
Abstract: No abstract text available
Text: 3 Phase Bridge Diode Large I o Single In-line Package OUTLINE D45XT160 Unit : mm Weight : 22g typ. Package TSB-5PIN 1600V 45A • • SIP • UL E142422 • ＋ ① ~∼ ∼ ② ③④ − ⑤ ＋ SHINDENGEN D45XT 160 0264 ∼ ∼ 27 ∼ − 管理番号（例）
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D45XT160
E142422
D45XT
J534-1
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D45X
Abstract: 330 marking diode SHINDENGEN DIODE SHINDENGEN
Text: 3 Phase Bridge Diode 大容量 シングルインライン型 Large I o Single In-line Package •外観図 OUTLINE D45XT160 Unit : mm Weight : 22g （typ.） Package：TSB-5PIN 1600V 45A 特長 • ３相ブリッジ • 薄型 SIP パッケージ • UL E142422
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D45XT160
E142422
D45XT
J534-1
D45X
330 marking diode
SHINDENGEN DIODE
SHINDENGEN
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D45X
Abstract: J534 D45XT80 SHINDENGEN DIODE D45Xt-80
Text: 大容量 シングルインライン型 3 Phase Bridge Diode Large I o Single In-line Package •外観図 OUTLINE D45XT80 Unit : mm Weight : 22g （typ.） Package：TSB-5PIN 800V 45A 特長 品名 Type No. • ３相ブリッジ • 薄型 SIP パッケージ
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D45XT80
E142422
D45XT
1mst10ms
J534-1
D45X
J534
D45XT80
SHINDENGEN DIODE
D45Xt-80
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D45H11
Abstract: D45H11J3
Text: Spec. No. : C607J3 Issued Date : 2005.07.11 Revised Date :2006.04.07 Page No. : 1/5 CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor D45H11J3 Features • Low VCE sat • High BVCEO • Excellent current gain characteristics • Pb-free package
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C607J3
D45H11J3
O-252
UL94V-0
D45H11
D45H11J3
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D45H11
Abstract: D45H11J3 C607J3
Text: Spec. No. : C607J3 Issued Date : 2005.07.11 Revised Date :2009.02.04 Page No. : 1/6 CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor D45H11J3 BVCEO IC RCESAT -80V -8A 75mΩ Features • Low VCE sat • High BVCEO • Excellent current gain characteristics
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C607J3
D45H11J3
O-252
UL94V-0
D45H11
D45H11J3
C607J3
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Untitled
Abstract: No abstract text available
Text: 大容量 シングルインライン型 3 Phase Bridge Diode Large I o Single In-line Package •外観図 OUTLINE D45XT80 Unit : mm Weight : 22g （typ.） Package：TSB-5PIN 800V 45A 特長 品名 Type No. • ３相ブリッジ • 薄型 SIP パッケージ
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D45XT80
E142422
D45XT
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Untitled
Abstract: No abstract text available
Text: 3 Phase Bridge Diode 大容量 シングルインライン型 Large I o Single In-line Package •外観図 OUTLINE D45XT160 Unit : mm Weight : 22g （typ.） Package：TSB-5PIN 1600V 45A 特長 • ３相ブリッジ • 薄型 SIP パッケージ • UL E142422
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D45XT160
E142422
D45XT
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D44VH10/D45VH10
Abstract: No abstract text available
Text: , One. 20 STERN AVE. TELEPHONE: 973 376-2922 SPRINGFIELD, NEW JERSEY 07081 (212)227-6005 U.S.A. FAX: (973) 376-8960 D44VH10 (NPN), D45VH10 (PNP) Complementary Silicon Power Transistors These complementary silicon power transistors are designed for high-speed switching applications, such as switching regulator's and
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D44VH10
D45VH10
D44VH10/D45VH10
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D44H8G
Abstract: D45H11G D44H11G D45H8G D44H D44H11 D44H8 D45H D45H11 D45H8
Text: D44H Series NPN , D45H Series (PNP) Preferred Devices Complementary Silicon Power Transistors These series of plastic, silicon NPN and PNP power transistors can be used as Ăgeneral purpose power amplification and switching such as output or driver stages in applications such as switching regulators,
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D44H8,
D45H8
D44H11,
D45H11
D44H8G
D45H11G
D44H11G
D45H8G
D44H
D44H11
D44H8
D45H
D45H11
D45H8
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D44VH10G
Abstract: D44VH10 D45VH10 D45VH10G
Text: D44VH10 NPN , D45VH10 (PNP) Complementary Silicon Power Transistors These complementary silicon power transistors are designed for high-speed switching applications, such as switching regulators and high frequency inverters. The devices are also well-suited for drivers
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D44VH10
D45VH10
D44VH10G
D44VH10
D45VH10
D45VH10G
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Untitled
Abstract: No abstract text available
Text: D44H11FP D45H11FP Complementary power transistors Preliminary data Features . • Low collector-emitter saturation voltage ■ Fast switching speed Applications ■ ■ Power amplifier 3 1 Switching circuits TO-220FP Description The devices are manufactured in low voltage multi
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D44H11FP
D45H11FP
O-220FP
D45H11FP
O-220FP
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Untitled
Abstract: No abstract text available
Text: D44H8 - D44H11 D45H8 - D45H11 Complementary power transistors Features . • Low collector-emitter saturation voltage ■ Fast switching speed TAB Applications ■ Power amplifier ■ Switching circuits 1 3 TO-220 Description The devices are manufactured in low voltage multi
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D44H8
D44H11
D45H8
D45H11
O-220
D44H8
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D44H8
Abstract: Part Marking TO-220 STMicroelectronics 4213 D44H11 D45H11 D45H8 ST MARKING to220
Text: D44H8 - D44H11 D45H8 - D45H11 Complementary power transistors Features . • Low collector-emitter saturation voltage ■ Fast switching speed TAB Applications ■ Power amplifier ■ Switching circuits 3 1 TO-220 Description The devices are manufactured in low voltage multi
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D44H8
D44H11
D45H8
D45H11
O-220
D44H8
Part Marking TO-220 STMicroelectronics
4213
D44H11
D45H11
ST MARKING to220
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D44H11FP
Abstract: No abstract text available
Text: D44H11FP D45H11FP Complementary power transistors Features . • Low collector-emitter saturation voltage ■ Fast switching speed Applications ■ ■ Power amplifier 3 1 Switching circuits TO-220FP Description The devices are manufactured in low voltage multi
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D44H11FP
D45H11FP
O-220FP
D44H11FP,
D44H11FP
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Untitled
Abstract: No abstract text available
Text: D44H11FP D45H11FP Complementary power transistors Features . • Low collector-emitter saturation voltage ■ Fast switching speed Applications ■ ■ Power amplifier 3 1 Switching circuits TO-220FP Description These low voltage transistors are housed in fully
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D44H11FP
D45H11FP
O-220FP
O-220FP
D45H11FP
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transistor 13003 AD
Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
Text: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)
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OT-23
KST06
KST05
KSC1623
BCW71
BCX70G
BCX70H
BCX70J
BCX70K
BCX71G
transistor 13003 AD
ksd-180
HF 13003
KSD180
13003 HF
KSD168
KSD966
ksd-168
PNP NPN Transistor VCEO 120V 100V Ic 7A
KSC 1.5k 250v
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Untitled
Abstract: No abstract text available
Text: 07 Q E s — • O3 fU <— i O U m- Operating Point Ruhestellung Rest Position Zulassige Endstellung: Gehauseoberkante, keine Auflagekraft zulassig. D £ O • O (D c e Approved end position: Upper edge of case, no supporting force allowed. Aufschrift Marking
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2768-m
DE-91275
/ems/d4/sts/d459-rlaa
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