MARKING DF FAIRCHILD Search Results

Contextual Info: FDMC86160 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 43 A, 14 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been

marking DF FAIRCHILD

Contextual Info: FDMS86540_F142 N-Channel PowerTrench MOSFET 60 V, 50 A, 3.4 m Features Description • RDS on = 2.7 m (Typ.) at VGS = 10 V, ID = 20 A • Low FOM RDS(on)*QG, Low Reverse-Recovery Charge, Qrr This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet

Contextual Info: FDME430NT N-Channel PowerTrench MOSFET 30 V, 6 A, 40 mΩ Features General Description „ Max rDS on = 40 mΩ at VGS = 4.5 V, ID = 6 A This single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench® process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET

ON Semiconductor marking

Abstract: fairchild marking codes sot-23 W2D SOT23 diode w2d SOT-353 MARKING L5 marking code vk, sot-363 va sot-353 1C SOT353 MC74VHC1G135 vsop8 package outline
Contextual Info: DLD601/D Rev. 1, Mar-2001 One-Gate Logic One-Gate Logic ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does

land pattern for sot23-3

Abstract: 12 sot23-3 marking d1y d0ay marking C3y sot-23 28 sot23-3 ILC5062 ILC5062AM23 ILC5062AM25 ILC5062AM27
Contextual Info: www.fairchildsemi.com ILC5062 SOT-23 Power Supply reset Monitor with 1% precision Features Description • • • • • • • All-CMOS voltage monitoring circuit in either a 3-lead SOT-23 or SC70 package offers the best performance in power consumption and accuracy.

marking DF FAIRCHILD

Abstract: FDMC86248
Contextual Info: FDMC86248 N-Channel Power Trench MOSFET 150 V, 13 A, 90 mΩ Features General Description „ Max rDS on = 90 mΩ at VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and

Contextual Info: FDMS86250 N-Channel PowerTrench MOSFET 150 V, 20 A, 25 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and

Contextual Info: FDMS86255 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 45 A, 12.4 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been

Contextual Info: FDMC8360L N-Channel Shielded Gate Power Trench MOSFET 40 V, 80 A, 2.1 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been

Contextual Info: FDMS86350 N-Channel PowerTrench MOSFET 80 V, 130 A, 2.4 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and

FDN537N

Abstract: marking 537
Contextual Info: FDN537N Single N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mΩ Features General Description „ Max rDS on = 23 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and

Contextual Info: FDMS86150 N-Channel PowerTrench MOSFET 100 V, 60 A, 4.85 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and

FDMC6683

Contextual Info: P-Channel PowerTrench MOSFET -20 V, -14 A, 8.4 mΩ Features General Description „ Max rDS on = 8.4 mΩ at VGS = -4.5 V, ID = -14 A This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(ON), switching performance and

Contextual Info: FDMC8884 N-Channel Power Trench MOSFET 30 V, 15 A, 19 mΩ Features General Description ̈ Max rDS on = 19 mΩ at VGS = 10 V, ID = 9.0 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This

Contextual Info: FDMA8878 Single N-Channel Power Trench MOSFET 30 V, 9.0 A, 16 mΩ Features General Description „ Max rDS on = 16 mΩ at VGS = 10 V, ID = 9.0 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has

mosfet L 3055

Contextual Info: FDMS86150 N-Channel PowerTrench MOSFET 100 V, 60 A, 4.85 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and

2326S

Contextual Info: FDMC86160 N-Channel Power Trench MOSFET 100 V, 43 A, 14 mΩ Features General Description „ Max rDS on = 14 mΩ at VGS = 10 V, ID = 9 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This

Contextual Info: FDMS86201 N-Channel Shielded Gate PowerTrench MOSFET 120 V, 49 A, 11.5 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been

FDMC86102L

Contextual Info: FDMC86102L N-Channel Shielded Gate PowerTrench MOSFET 100 V, 18 A, 23 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been

Contextual Info: FDMC86102 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 20 A, 24 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been

FDMC86240

Contextual Info: FDMC86240 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 16 A, 51 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been

Contextual Info: FDMC7660 N-Channel PowerTrench MOSFET 30 V, 20 A, 2.2 mΩ Features General Description ̈ Max rDS on = 2.2 mΩ at VGS = 10 V, ID = 20 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This

Contextual Info: FDMC86248 N-Channel Power Trench MOSFET 150 V, 13 A, 90 mΩ Features General Description ̈ Max rDS on = 90 mΩ at VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and

4405 mosfet

Contextual Info: FDMC8010 N-Channel PowerTrench MOSFET 30 V, 75 A, 1.3 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This