MARKING DI SMD Search Results

Contextual Info: KU SMD TS SKUS ERI ES OUTLI NEDI MENSI ONS KU5S31NS Package M2F Marking（ｏld） Type No. K05S 3100 310V50A 品名略号 Type No. Date code 5S31 00 00 管理番号 （例） Feat ur e ① ② ② ロット記号 （例） Control No. Bi di r ect i onal Hi

K10S

Contextual Info: KU SMD TS SKUS ERI ES OUTLI NEDI MENSI ONS KU10S35NS Package M2F Marking（ｏld） Type No. K10S 3500 350V100A 品名略号 Type No. Date code 10S35 00 00 ② 管理番号（例） Control No. Feat ur e Bi di r ect i onal Hi ghSpeedRes pons e Lar ges ur gecur

Contextual Info: IC MOSFET SMD Type Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor SI8822 TSSOP-8 • Features Unit: mm ● VDS V = 20V ● ID = 7A (VGS=10V) ● RDS(ON) ＜ 21mΩ (VGS = 10V) ● RDS(ON) ＜ 24mΩ (VGS = 4.5V) ● RDS(ON) ＜ 32mΩ (VGS = 2.5V)

marking DI SMD

Contextual Info: IDB06E60 Fast Switching EmCon Diode Product Summary Feature VRRM • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 6 A VF 1.5 V T jmax 175 °C P-TO220-3.SMD • Low forward voltage • 175°C operating temperature

10ETF

Abstract: 10ETF02S 10ETF04S 10ETF06S AN-994 SMD-220
Contextual Info: 10ETF.SPbF Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 10 A FEATURES/DESCRIPTION Base common cathode + 2 D2PAK SMD-220 1 Anode - The 10ETF.SPbF fast soft recovery rectifier series has been optimized for combined short

A7 SMD TRANSISTOR

Abstract: SMD a7 Transistor smd transistor marking a7 smd TRANSISTOR sot-23 a7 smd transistor A7 KO3407 smd transistor A7 s 52 smd a7 smd transistor A7 sot 23 smd diode a7
Contextual Info: Transistors IC SMD Type P-Channel Enhancement Mode Field Effect Transistor KO3407 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 RDS ON 87m 1 (VGS = -10V) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 (VGS = -4.5V) +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1

smd transistor A1

Abstract: DIODE smd marking A1 smd transistor 2a 43 KO3401 smd transistor marking A1 SMD TRANSISTOR MARKING 94 SMD TRANSISTOR A1 SOT23 smd diode A1 smd transistor A1 sot-23 marking A1 TRANSISTOR
Contextual Info: Transistors IC SMD Type P-Channel Enhancement Mode Field Effect Transistor KO3401 SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 VDS V = -30V 0.4 3 (VGS = -10V) RDS(ON) 65m (VGS = -4.5V) 120m 2 +0.1 0.95-0.1 +0.1 1.9-0.1 (VGS = -2.5V) +0.05 0.1-0.01

smd marking 58a

Abstract: smd transistor a4 a4 smd transistor smd transistor marking A4 KO3404 SMD TRANSISTOR A4 S DIODE smd marking A4 smd diode A4 marking on IC SMD TRANSISTOR MARKING 28 DIODE EJL
Contextual Info: Transistors IC SMD Type N-Channel Enhancement Mode Field Effect Transistor KO3404 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 28 m VGS = 10V RDS(ON) 43 m (VGS = 4.5V) 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1

Contextual Info: Transistors IC SMD Type P-Channel Enhancement Mode Field Effect Transistor KO3403 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 VDS V = -30V 0.4 3 Features 1 RDS(ON) 180 m (VGS = -4.5V) RDS(ON) 260m (VGS = -2.5V) 2 +0.1 0.95-0.1 +0.1

10ETF

Abstract: 10ETF02S 10ETF04S 10ETF06S AN-994 SMD-220
Contextual Info: VS-10ETF.SPbF Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 10 A FEATURES Base common cathode + 2 D2PAK SMD-220 1 Anode - • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS directive 2002/95/EC

D06E60

Abstract: IDB06E60 Q67040-S4481 marking diode 6a diode 400V 6A IDP06E60 Q67040-S4480 400v 3a low vf diode smd code 6a marking DI SMD
Contextual Info: IDP06E60 IDB06E60 Fast Switching EmCon Diode Product Summary Feature VRRM • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 6 A VF 1.5 V T jmax 175 °C P-TO220-3.SMD • Low forward voltage P-TO220-2-2.

Contextual Info: IDB09E120 Fast Switching EmCon Diode Product Summary Feature VRRM • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 9 A VF 1.65 V T jmax 150 °C P-TO220-3.SMD • Low forward voltage • Easy paralleling

Contextual Info: VS-10ETF.SPbF Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 10 A FEATURES Base common cathode + 2 D2PAK SMD-220 1 Anode - • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS directive 2002/95/EC

Contextual Info: IDB09E60 Fast Switching EmCon Diode Product Summary Feature VRRM • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 9 A VF 1.5 V T jmax 175 °C P-TO220-3.SMD • Low forward voltage • 175°C operating temperature

D06E60

Abstract: diode 400V 6A IDB06E60 Q67040-S4481 IDP06E60 Q67040-S4480 marking diode 6a
Contextual Info: IDP06E60 IDB06E60 Preliminary data Fast Switching EmCon
Diode Product Summary Feature 600 V IF 6 A VF 1.45 V Tjmax 175 °C VRRM
600 V EmCon technology
Fast recovery
Soft switching
Low reverse recovery charge P-TO220-3.SMD
Low forward voltage P-TO220-2-2.

smd code marking 4A

Abstract: D04E120 IDB04E120 IDP04E120 Q67040-S4388
Contextual Info: IDP04E120 IDB04E120 Fast Switching EmCon Diode Product Summary Feature VRRM • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 4 A VF 1.65 V T jmax 150 °C P-TO220-3.SMD • Low forward voltage P-TO220-2-2.

D09E60

Abstract: Q67040-S4482 IDB09E60 IDP09E60 Q67040-S4483
Contextual Info: IDP09E60 IDB09E60 Fast Switching EmCon Diode Product Summary Feature VRRM • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 9 A VF 1.5 V T jmax 175 °C P-TO220-3.SMD • Low forward voltage P-TO220-2-2.

smd code marking 4A

Contextual Info: IDP04E120 IDB04E120 Fast Switching EmCon Diode Product Summary Feature VRRM • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 4 A VF 1.65 V T jmax 150 °C P-TO220-3.SMD • Low forward voltage • Easy paralleling

A18E smd

Abstract: A18E
Contextual Info: MOSFET IC SMD Type P-Channel Enhancement Mode Power MOSFET AO3401 SOT-23-3 Unit: mm • Features +0.2 2.9-0.2 +0.1 0.4-0.05 ● VDS V = -30V (VGS = -10V) RDS(ON) 65m (VGS = -4.5V) 1 ● RDS(ON) ＜ 120mΩ (VGS = -2.5V) 0.55 50m +0.2 1.6 -0.1 RDS(ON) +0.2

A08K

Abstract: a08k transistor SMD TRANSISTOR mosfet marking pd
Contextual Info: MOSFET IC SMD Type N-Channel Enhancement Mode Field Effect Transistor KO3416 SOT-23-3 Unit: mm +0.2 2.9-0.2 +0.1 0.4-0.05 • Features 1 ● RDS ON ＜ 26mΩ (VGS = 2.5V) 0.55 ● RDS(ON) ＜ 22mΩ (VGS = 4.5V) +0.2 1.6 -0.1 +0.2 2.8-0.2 ● ID = 6.5 A 0.4

Contextual Info: VS-10ETF.SPbF Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 10 A FEATURES Base common cathode + 2 D2PAK SMD-220 1 Anode - • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS directive 2002/95/EC

IFM VS 0100

Abstract: smd diode B3
Contextual Info: VS-10ETF.SPbF Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 10 A FEATURES Base common cathode + 2 D2PAK SMD-220 1 Anode - • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS directive 2002/95/EC

Contextual Info: MOSFET IC SMD Type P-Channel 20V DS MOSFET UI2321DS K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 RDS(ON) < 50m RDS(ON) < 65m 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 (VGS = -4.5V) +0.05 0.1-0.01 (VGS = -2.5V) +0.1 0.97-0.1 RDS(ON) < 120m (VGS = -10V)

Elettro

Abstract: marking SMD crystal CODES F100 SX6035 SX6035A
Contextual Info: Pb Quartz Crystal : SX6035 , SX6035A General description SMD Crystals suitable for any kind of application and realized in AT Cut to get best performance available temp. stability <±4ppm in the range –20°C / +70°C . Widely used in telecomm. Field and PC