MARKING DIODE J4 Search Results

Contextual Info: SIEMENS BBY51 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Ordering Code Pin Configuration BBY51 S3 Q62702-B631 1=A Package < Marking II CM Type

TSE 151

Contextual Info: ERC01 1.5A I Outline Drawings GENERAL USE RECTIFIER DIODE : Features • W ide voltage class • BG fSISii • I I tjv : Marking High reliability ■ E I& : Applications * 5-u - K : É Color code : White •« » ¿ ft / General purpose rectifier applications

b83006

Abstract: diode schottky b83006 B83-006 diode b83
Contextual Info: E R B83-006 2A : Outline Drawings I SCHOTTKY BARRIER DIODE : Features • vP IS/jv : Marking Low VF Ä 7 - 3 - K : Sit Color code : Super high speed switching. High reliability by planer design Abridged type name 3LŒ? 7 * • E IS I : Applications Voltage ciass

ERA82-004

Abstract: P151 T151 T810 T930 a316
Contextual Info: ERA 82-004 o.6A M J f : Outline Drawings SC H O TTK Y BARRIER DIODE Features • te V F Low V f ISït f : Marking *•7- o—K : t-i Color code •White Super high speed switching. • n m - ¿ ¿ a ti« H 4 High reliability by planer design. ¥ 1 D y f-Na

a124 es

Abstract: rkm v
Contextual Info: E R D 3 2 3 A * ± 'J : Outline Drawings -K FAST RECOVERY DIODE Features : Marking S u p e r h ig h speed s w itc h in g • ffiVF A5 - 3 - K Color code ; 0 range Low V F B sW i Abridged Large c u rre n t • SSft is-ti ty p e name 5 7. V oltage class

Contextual Info: DATA SHEET NEC / M OS FIELD EFFECT TRANSISTOR 2SJ462 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION Package Drawings unit ; mm The 2S J462 is a switching device which can be driven directly 5.7 ± 0 J by an 1C operating at 3 V,

smd diode marking code SM

Abstract: Diode smd code sm 14
Contextual Info: PhilipsSem icom iuctors Preliminary specification Schottky barrier diode FEATURES 1PS76SB17 DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD323 very sm all plastic • Low diode capacitance Package. • ESD > 500 V; Human body model

h8 diode zener

Abstract: diode marking code h6 cmoz18v diode J2 marking code CMOZ12V marking J4 diode DIODE MARKING CODE H7
Contextual Info: Central CMOZ2V4 THRU CMOZ43V TM Semiconductor Corp. SURFACE MOUNT ULTRAmini SILICON ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 250mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ2V4 Series Zener Diode is a high quality voltage regulator in an epoxy-molded ULTRAmini™

diode marking code h6

Abstract: marking code f6 DIODE Zener diode MARKING H5 h8 diode zener diode marking code H5 diode J2 marking code marking code f4 DIODE zener diode F6 marking J4 diode diode marking f6
Contextual Info: Central CMOZ2V4 THRU CMOZ43V TM Semiconductor Corp. SURFACE MOUNT ULTRAmini SILICON ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 350mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ2V4 Series Zener Diode is a high quality voltage regulator in an epoxy-molded ULTRAmini™

Zener diode MARKING H5

Abstract: marking code f4 DIODE h8 diode zener marking code f6 DIODE zener diode f7 diode marking code f6 CMOZ3V0 DIODE MARKING CODE H7 CMOZ5V6 diode marking code H5
Contextual Info: CMOZ2V4 THRU CMOZ43V SURFACE MOUNT SILICON ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ2V4 Series Zener Diode is a high quality voltage regulator in an epoxy-molded ULTRAmini package, designed for

Contextual Info: CMOZ2V4 THRU CMOZ43V SURFACE MOUNT SILICON ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ2V4 Series Zener Diode is a high quality voltage regulator in an epoxy-molded ULTRAmini package, designed for

h8 diode zener

Abstract: marking code f4 DIODE Zener diode MARKING H5 DIODE MARKING CODE H7 marking h8 diode marking J4 diode cmoz18v diode marking code h6 CMOZ4V3 CMOZ33V
Contextual Info: CMOZ2V4 THRU CMOZ43V SURFACE MOUNT SILICON ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ2V4 Series Zener Diode is a high quality voltage regulator in an epoxy-molded ULTRAmini package, designed for

Zener Diode LF marking

Abstract: 831 SOD-523 diode J2 marking code
Contextual Info: Central" MOZ2V4 THRU CMOZ43V sem iconductor Corp. SURFACE MOUNT ULTRAmini" SILICON ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 350mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ2V4 Series Zener Diode is a high quality voltage reg­ ulator in an epoxy-molded ULTRAmini pack­

MARKING CODE f5

Abstract: diode marking code h6 marking code f4 DIODE Zener diode MARKING H5 CMOZ3V0 CMOZ5V1 Zener diode h5 zener diode f7 diode marking 714 CMOZ11V
Contextual Info: Central CMOZ2V4 THRU CMOZ43V TM Semiconductor Corp. SURFACE MOUNT ULTRAmini SILICON ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ2V4 Series Zener Diode is a high quality voltage regulator in an epoxy-molded ULTRAmini™

d 132 smd diode

Contextual Info: Schottky Barrier Diode Twin Diode M fm OUTLINE Package : STO-220 DF20JC10 Unit-mm Weight 1.5g Typ 10.2 100V 20A Feature • SMD • <SlR=0.7mA • SMD • S iy R T È Î E iË c I l_y (<_ <L U'' • Resistance for thermal run-away • High lo Rating-Small-RKG

smd diode marking LM

Abstract: smd diode "marking 77" SMD diode TSA smd diode HB RW marking Diode marking TY
Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : E-pack DE10SC3L Unit^mm W eight 0.326g Typ 30 V 10A Feature <SMD • SMD • Tj=150°C •<SV f=0.45V 1Tj=150°C 1 Low Vf=0.45V 1 P rrsm Rating 1 High lo Rating -Small-PKG • P r r s m 7 7A ' 5 > ^ i S IÎE

smd ic marking SH

Contextual Info: Schottky Barrier Diode Twin Diode M fm DF30JC10 O UTLINE Unit-mm Weight 1.5g Typ Package : STO-220 PyhfLig-(ffl) 10.2 100V 30A Feature • SM D • SMD • • (glR=1.0mA • Low Ir =1 .0mA • S iy R T È ÎE iË c I l_y (<_ <L Ui • Resistance for thermal run-away

diode smd JS 8

Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : E-pack DE5SC4M Unit-mm Weight 0.326g Typ 40V 5A Feature >SMD 1Tj=150°C 1 P r r s m Rating 1 High lo Rating -Small-PKG • SMD • Tj=150°C • P r r s m T ’A ' ^ V S ' i f S l i E Main Use » D C /D C o

DIODE JS.9 smd

Contextual Info: Schottky Barrier Diode Twin Diode m tm OUTLINE Package : STO-220 DF40SC4 u^hàLÌ°- M 40V m U nit-m m W eight 1.5g (T y p ) 10.2 DA Feature a • SMD < • Tj=150°C 1Tj=150°C • P rrsm 1 P rrs m Rating SMD 1 High lo Rating -Small-PKG 4.7 m Main Use

BAV70-A4

Abstract: Diode Marking z3 SOT-23 diode marking w8 BAV70A marking Z6 SOT-23 Capacitance BAS 20 SOT23 SOT23 DIODE marking CODE AV Z6 DIODE BAS16 BAV70
Contextual Info: FERRANTI 4 semiconductors BAV70 H ig h S peed S w itc h in g D io d e Pair C o m m o n C a th o d e DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and thick film

smd diode marking U1

Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : E-pack DE10PC3 Unit-mm Weight 0.326g Typ 30 V 10A Feature • SMD • SMD • î 2 ® V f =0.4 V • U ltra -L o w V f=0.4V • iJ 'S = À l; jS î § M • High lo R a tin g -S m a ll-P K G Main Use

300V-20A

Contextual Info: Super Fast Recovery Diode Twin Diode m tm DF20LC30 OUTLINE U nit-m m Package : STO-220 W eight 1.5g Typ 10.2 P y h fL ig -(ffl) 300V 20A Feature • SMD • SMD •e y -rx • Low Noise • trr=30ns • trr=30ns 4.7 Main Use • Switching Regulator >DC/DC n y t K —S

marking AFW

Abstract: SMD DIODE BOOK diode T3 Marking 20NC15 DF20NC15 smd marking 5G J532 smd diode marking 47
Contextual Info: Schottky Barrier Diode Twin Diode Mfm OUTLINE Package : STO-220 DF20NC15 Unit-m m Weight 1.5g Typ P y K L l°-(ffl) 10.2 15 0 V 2 0 A Feature • SM D ' SM D • <SlR=0.4mA 1Low lR=0.4mA 1Resistance for thermal run-away < IA Main Use >X ' f ' y 1Sw itching Regulator

smd diode marking FG

Abstract: f15jc10
Contextual Info: Schottky Barrier Diode Twin Diode M fm OUTLINE Package : STO-220 D F15J C 10 Unit-m m W e ig h t 1.5g Typ 10.2 100 V 15A Feature • SMD • -fg| = 0 . 6mA • SMD • SiyRTÈÎEiËcI l_y(<_<LU'' • Resistance for thermal run-away • High lo Rating-Small-RKG