MARKING DIODE Y4 Search Results

marking A4t sot23

Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE

philips diode PH 33D

Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

marking A4t sot23

Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

Y4 ZENER DIODE

Abstract: zener y4 ksd2054 Y4 diode zener SDZ15VF code y4 y4 marking
Contextual Info: SDZ15VF Semiconductor Zener Diode Features • Compact type • Radiation size 1.6mm x 2.9mm • Surface mount lead configuration Ordering Information Type NO. SDZ15VF Marking Package Code Y4 SOT-23F Outline Dimensions unit : mm 2.4±0.1 1.6±0.1 1.90 BSC

Y4 ZENER DIODE

Abstract: Y4 sot-23 2019000 y4-sot 23 Y4 diode zener zener y4 SDZ15V marking code y4 ksd2019
Contextual Info: SDZ15V Semiconductor Zener Diode Features • Compact type • Radiation size 1.3mm x 2.9mm • Surface mount lead configuration Ordering Information Type NO. SDZ15V Marking Package Code Y4 SOT-23 Outline Dimensions unit : mm 2.4±0.1 1.30±0.1 3 2.9±0.1

DIODE S3V 63

Contextual Info: Axial Diode Single Diode Avalanche type • O U T L IN E D IM E N S IO N S D ‘ Cathode (D • Anode S3VDZ 7.5MAX 24MIN 600V 3.5A 24MIN II JLi o-— M Marking S3V □D _ Type No. (S4.8MAX -■0 x-inwH JiM i! ■ +1 63 / C olor code, Cathode band

diode 12A3

Contextual Info: MDI100-12A3 IGBT NPT Module VCES = 1200 V I C25 = 135 A VCE(sat) = 2.2 V Buck Chopper + free wheeling Diode Part number MDI100-12A3 Backside: isolated 1 7 6 3 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage

Contextual Info: MID100-12A3 IGBT NPT Module VCES = 1200 V I C25 = 135 A VCE(sat) = 2.2 V Boost Chopper + free wheeling Diode Part number MID100-12A3 Backside: isolated 1 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage

Contextual Info: MID75-12A3 IGBT NPT Module VCES = 1200 V I C25 = 90 A VCE(sat) = 2.2 V Boost Chopper + free wheeling Diode Part number MID75-12A3 Backside: isolated 1 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage

Contextual Info: MDI75-12A3 IGBT NPT Module VCES = 1200 V I C25 = 90 A VCE(sat) = 2.2 V Buck Chopper + free wheeling Diode Part number MDI75-12A3 Backside: isolated 1 7 6 3 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage

diode 12A3

Contextual Info: MID145-12A3 IGBT NPT Module VCES = 1200 V I C25 = 160 A VCE(sat) = 2.2 V Boost Chopper + free wheeling Diode Part number MID145-12A3 Backside: isolated 1 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage

diode 12A3

Contextual Info: MDI145-12A3 IGBT NPT Module VCES = 1200 V I C25 = 160 A VCE(sat) = 2.2 V Buck Chopper + free wheeling Diode Part number MDI145-12A3 Backside: isolated 1 7 6 3 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage

MII100

Contextual Info: MII100-12A3 IGBT NPT Module VCES = 2x 1200 V I C25 = 135 A VCE(sat) = 2.2 V Phase leg Part number MII100-12A3 Backside: isolated 1 7 6 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage ● low switching losses

MII145-12A3

Contextual Info: MII145-12A3 IGBT NPT Module VCES = 2x 1200 V I C25 = 160 A VCE(sat) = 2.2 V Phase leg Part number MII145-12A3 Backside: isolated 1 7 6 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage ● low switching losses

Contextual Info: MCD132-18io1 Thyristor Module VRRM = 2x 1800 V I TAV = 130 A VT = 1.08 V Phase leg Part number MCD132-18io1 Backside: isolated 3 1 5 4 2 Features / Advantages: Applications: Package: Y4 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability

Contextual Info: MCC132-08io1 Thyristor Module VRRM = 2x 800 V I TAV = 130 A VT = 1.08 V Phase leg Part number MCC132-08io1 Backside: isolated 3 6 7 1 5 4 2 Features / Advantages: Applications: Package: Y4 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability

Contextual Info: MCC162-08io1 Thyristor Module VRRM = 2x 800 V I TAV = 181 A VT = 1.03 V Phase leg Part number MCC162-08io1 Backside: isolated 3 6 7 1 5 4 2 Features / Advantages: Applications: Package: Y4 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability

Contextual Info: MCC132-14io1 Thyristor Module VRRM = 2x 1400 V I TAV = 130 A VT = 1.08 V Phase leg Part number MCC132-14io1 Backside: isolated 3 6 7 1 5 4 2 Features / Advantages: Applications: Package: Y4 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability

Contextual Info: MCC162-18io1 Thyristor Module VRRM = 2x 1800 V I TAV = 181 A VT = 1.03 V Phase leg Part number MCC162-18io1 Backside: isolated 3 6 7 1 5 4 2 Features / Advantages: Applications: Package: Y4 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability

Contextual Info: MCD162-12io1 Thyristor Module VRRM = 2x 1200 V I TAV = 181 A VT = 1.03 V Phase leg Part number MCD162-12io1 Backside: isolated 3 1 5 4 2 Features / Advantages: Applications: Package: Y4 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability

Contextual Info: MCD162-18io1 Thyristor Module VRRM = 2x 1800 V I TAV = 181 A VT = 1.03 V Phase leg Part number MCD162-18io1 Backside: isolated 3 1 5 4 2 Features / Advantages: Applications: Package: Y4 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability

MCD162-08IO1

Contextual Info: MCD162-08io1 Thyristor Module VRRM = 2x 800 V I TAV = 181 A VT = 1.03 V Phase leg Part number MCD162-08io1 Backside: isolated 3 1 5 4 2 Features / Advantages: Applications: Package: Y4 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability

Contextual Info: MCC162-16io1 Thyristor Module VRRM = 2x 1600 V I TAV = 181 A VT = 1.03 V Phase leg Part number MCC162-16io1 Backside: isolated 3 6 7 1 5 4 2 Features / Advantages: Applications: Package: Y4 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability