"marking E1"
Abstract: BFS17 BFS17R sot 23 transistor 70.2
Text: BFS17/BFS17R Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter 2 95 10527 BFS17R Marking: E4
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BFS17/BFS17R
BFS17
BFS17R
D-74025
17-Apr-96
"marking E1"
sot 23 transistor 70.2
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Untitled
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHN203KPT SURFACE MOUNT SWITCHING DIODE VOLTAGE 85 Volts CURRENT 0.125 Ampere APPLICATION * Ultra high speed switching SOT-23 * Silicon epitaxial planar MARKING .066 1.70 CONSTRUCTION .110 (2.80) .082 (2.10) .119 (3.04) (1) * E4
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CHN203KPT
OT-23
250mW.
500mA.
OT-23)
100oC
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CHN203KGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHN203KGP SURFACE MOUNT SWITCHING DIODE VOLTAGE 85 Volts CURRENT 0.125 Ampere APPLICATION * Ultra high speed switching SOT-23 * Silicon epitaxial planar MARKING .066 1.70 CONSTRUCTION .110 (2.80) .082 (2.10) .119 (3.04) (1) * E4
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CHN203KGP
OT-23
250mW.
500mA.
OT-23)
100oC
CHN203KGP
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Untitled
Abstract: No abstract text available
Text: DMA26401 Silicon PNP epitaxial planar type Unit: mm For digital circuits • Features Low collector-emitter saturation voltage VCE sat Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: E4 Basic Part Number
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DMA26401
UL-94
DRA2114E
DMA264010R
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AN1124
Abstract: AVAGO MARKING E4
Text: HSMP-381x, 481x Surface Mount RF PIN Low Distortion Attenuator Diodes Data Sheet Description/Applications Features The HSMP-381x series is specifically designed for low distortion attenuator applications. The HSMP-481x products feature ultra low parasitic inductance in the SOT-23 and
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HSMP-381x,
HSMP-381x
HSMP-481x
OT-23
OT-323
AV01-0378EN
AV02-0402EN
AN1124
AVAGO MARKING E4
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AVAGO MARKING E4
Abstract: MARKING E4 "Pin Diode" marking e4 sot
Text: HSMP-381x, 481x Surface Mount RF PIN Low Distortion Attenuator Diodes Data Sheet Description/Applications Features The HSMP-381x series is specifically designed for low distortion attenuator applications. The HSMP-481x products feature ultra low parasitic inductance in the SOT-23 and
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HSMP-381x,
HSMP-381x
HSMP-481x
OT-23
OT-323
AV01-0378EN
AV02-0402EN
AVAGO MARKING E4
MARKING E4 "Pin Diode"
marking e4 sot
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AVAGO MARKING E4
Abstract: AN1124 381B HSMP3810 HSMP4810 MARKING E4 "Pin Diode" e4 b09
Text: HSMP-381x, 481x Surface Mount RF PIN Low Distortion Attenuator Diodes Data Sheet Description/Applications Features The HSMP-381x series is specifically designed for low distortion attenuator applications. The HSMP-481x products feature ultra low parasitic inductance in the SOT-23 and
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HSMP-381x,
HSMP-381x
HSMP-481x
OT-23
OT-323
OT-323
SC70-3
OT-363
SC70-6
AV01-0378EN
AVAGO MARKING E4
AN1124
381B
HSMP3810
HSMP4810
MARKING E4 "Pin Diode"
e4 b09
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AVAGO MARKING E4
Abstract: AN1124 diode piv 10 on semiconductor marking code sot Product type marking code 039 sc-70 package pcb layout diode marking code RJ marking code abc marking code e2 Microwave PIN diode spice
Text: HSMP-381x, 481x Surface Mount RF PIN Low Distortion Attenuator Diodes Data Sheet Description/Applications Features The HSMP-381x series is specifically designed for low distortion attenuator applications. The HSMP-481x products feature ultra low parasitic inductance in the SOT-23 and
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HSMP-381x,
HSMP-381x
HSMP-481x
OT-23
OT-323
OT-323
SC70-3
OT-363
SC70-6
AV01-0378EN
AVAGO MARKING E4
AN1124
diode piv 10
on semiconductor marking code sot
Product type marking code 039
sc-70 package pcb layout
diode marking code RJ
marking code abc
marking code e2
Microwave PIN diode spice
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SOT-323 package outline
Abstract: sot-23 MARKING 3l AN1124 Microwave PIN diode spice part marking ab sc-70 sc-70 package pcb layout sc70-3 PCB PAD 381B HSMP3810 HSMP4810
Text: HSMP-381x, 481x Surface Mount RF PIN Low Distortion Attenuator Diodes Data Sheet Description/Applications Features The HSMP-381x series is specifically designed for low distortion attenuator applications. The HSMP-481x products feature ultra low parasitic inductance in the SOT-23 and
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HSMP-381x,
HSMP-381x
HSMP-481x
OT-23
OT-323
OT-323
SC70-3
OT-363
SC70-6
AV01-0378EN
SOT-323 package outline
sot-23 MARKING 3l
AN1124
Microwave PIN diode spice
part marking ab sc-70
sc-70 package pcb layout
sc70-3 PCB PAD
381B
HSMP3810
HSMP4810
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AN1124
Abstract: AVAGO MARKING E4 Marking Code ABC Microwave PIN diode spice part marking ab sc-70 PIN DIODE MARKING CODE AB sc-70 package pcb layout sc70-3 PCB PAD 381B HSMP3810
Text: HSMP-381x, 481x Surface Mount RF PIN Low Distortion Attenuator Diodes Data Sheet Description/Applications Features The HSMP-381x series is specifically designed for low distortion attenuator applications. The HSMP-481x products feature ultra low parasitic inductance in the SOT-23 and
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PDF
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HSMP-381x,
HSMP-381x
HSMP-481x
OT-23
OT-323
OT-323
SC70-3
OT-363
SC70-6
AV01-0378EN
AN1124
AVAGO MARKING E4
Marking Code ABC
Microwave PIN diode spice
part marking ab sc-70
PIN DIODE MARKING CODE AB
sc-70 package pcb layout
sc70-3 PCB PAD
381B
HSMP3810
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Diodes smd e4
Abstract: E4 smd SMD e5 smd marking e5 Diodes smd e5 ic e4 SMD E4 sot 2SA1256 smd ic marking e5 E5 SMD
Text: Transistors IC SMD Type PNP Epitaxial Planar Silicon Transistors 2SA1256 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Small NF 2.5dB typ . 0.55 High fT (230MHz typ), and small Cre (1.1pF typ). 2 +0.1 0.95-0.1 +0.1 1.9-0.1
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2SA1256
OT-23
230MHz
100MHz
Diodes smd e4
E4 smd
SMD e5
smd marking e5
Diodes smd e5
ic e4
SMD E4 sot
2SA1256
smd ic marking e5
E5 SMD
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Untitled
Abstract: No abstract text available
Text: Product specification 2SA1256 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Small NF 2.5dB typ . 0.55 High fT (230MHz typ), and small Cre (1.1pF typ). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05
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2SA1256
OT-23
230MHz
100MHz
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Untitled
Abstract: No abstract text available
Text: Product specification 2SA1226 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 Low output capacitance 0.55 High gain bandwidth product +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Low noise
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2SA1226
OT-23
-10mA
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E4 SMD TRANSISTOR
Abstract: smd transistor marking E4 Diodes smd e4 e2 smd transistor marking E2 E4 smd Transistors Diodes smd e2 SMD E4 sot 2SA122 PT-200
Text: Transistors IC SMD Type Silicon Transistor 2SA1226 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 Low output capacitance 0.55 High gain bandwidth product +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1
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2SA1226
OT-23
-10mA
E4 SMD TRANSISTOR
smd transistor marking E4
Diodes smd e4
e2 smd transistor
marking E2
E4 smd
Transistors Diodes smd e2
SMD E4 sot
2SA122
PT-200
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3NF06L
Abstract: JESD97 STN3NF06L
Text: STN3NF06L N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET Features Type VDSS @Tjmax RDS(on) max ID STN3NF06L 60 V < 0.1 Ω 4A • Exceptional dv/dt capability ■ Avalanche rugged technology ■ 100% avalanche tested ■ Low threshold drive
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STN3NF06L
OT-223
3NF06L
JESD97
STN3NF06L
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ZENER DIODE E1
Abstract: C2101 diode marking H2 MMBZ5221BT MMBZ5223BT MMBZ5225BT MMBZ5226BT MMBZ5227BT MMBZ5228BT MMBZ5229BT
Text: MMBZ5221BT - MMBZ5259BT 150mW SURFACE MOUNT ZENER DIODE NEW PRODUCT Features • · · · Ultra-Small Surface Mount Package Planar Die Construction General Purpose Ideally Suited for Automated Assembly Processes SOT-523 TOP VIEW B C Mechanical Data · · ·
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MMBZ5221BT
MMBZ5259BT
150mW
OT-523
OT-523,
MIL-STD-202,
DS30267
ZENER DIODE E1
C2101
diode marking H2
MMBZ5223BT
MMBZ5225BT
MMBZ5226BT
MMBZ5227BT
MMBZ5228BT
MMBZ5229BT
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Untitled
Abstract: No abstract text available
Text: MMBZ5221BT - MMBZ5259BT 200mW SURFACE MOUNT ZENER DIODE UNDER DEVELOPMENT NEW PRODUCT Features • · · · Ultra-Small Surface Mount Package Planar Die Construction General Purpose Ideally Suited for Automated Assembly Processes SOT-523 TOP VIEW B C Mechanical Data
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MMBZ5221BT
MMBZ5259BT
200mW
OT-523
OT-523,
MIL-STD-202,
i30267
DS30267
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JESD97
Abstract: N4NF03L STN4NF03L
Text: STN4NF03L N-channel 30V - 0.039Ω - 6.5A - SOT-223 STripFET II Power MOSFET General features • Type VDSS RDS on ID STN4NF03L 30V <0.05Ω 6.5A 2 Low threshold drive 1 Description 2 3 SOT-223 This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature
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STN4NF03L
OT-223
N4NF03L
JESD97
N4NF03L
STN4NF03L
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n1nf10
Abstract: JESD97 STN1NF10
Text: STN1NF10 N-channel 100V - 0.7Ω -1A SOT-223 STripFET II Power MOSFET General features • Type VDSS RDS on ID STN1NF10 100V <0.8Ω 1A 2 Exceptional dv/dt capability 1 Description 2 3 SOT-223 This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature
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STN1NF10
OT-223
N1NF10
n1nf10
JESD97
STN1NF10
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Untitled
Abstract: No abstract text available
Text: MMBZ5221BT - MMBZ5259BT 200mW SURFACE MOUNT ZENER DIODE NEW PRODUCT Features • · · · Ultra-Small Surface Mount Package Planar Die Construction General Purpose Ideally Suited for Automated Assembly Processes SOT-523 TOP VIEW B C Mechanical Data · · ·
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MMBZ5221BT
MMBZ5259BT
200mW
OT-523
OT-523,
MIL-STD-202,
Rat30267
DS30267
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Untitled
Abstract: No abstract text available
Text: STN1NF10 N-channel 100V - 0.7Ω -1A SOT-223 STripFET II Power MOSFET General features • Type VDSS RDS on ID STN1NF10 100V <0.8Ω 1A 2 Exceptional dv/dt capability 1 Description 2 3 SOT-223 This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™"
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STN1NF10
OT-223
OT-223
STN1NF10
N1NF10
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transistor MAR 819
Abstract: transistor MAR 543 sl2 357 BFS17
Text: Tem ic BFS17/BFS17R Sem iconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package BFS17 Marking: El Plastic case SOT 23 1= Collector; 2= Base: 3= Emitter BFS17R Marking: E4
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OCR Scan
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PDF
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BFS17/BFS17R
BFS17
BFS17R
26-Mar-97
transistor MAR 819
transistor MAR 543
sl2 357
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MA 17358
Abstract: B/TDA 16840
Text: O K I electronic components KGF1312_ Power FET for UHF-Band Frequencies Plastic Mold Type GENERAL DESCRIPTION The KGF1312, housed in an SOT-89 type plastic-mold package, is a discrete UHF band power FET that features high efficiency and high output power. The KGF1312 specifications are
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KGF1312_
KGF1312,
OT-89
KGF1312
KGF1312
72M2MD
L724240
MA 17358
B/TDA 16840
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SO3572R
Abstract: transistors BFW30 BFR 450 G1 BL BF115 BFR53R BFR 91 A N SO3570 BFR 50 1300 bl
Text: A C T IV E COM PON EN TS FOR H Y B R ID C IR C U IT S COMPOSANTS AC TIFS POUR CIRCUITS H YBRIDES CB-166 SOT-23 Silicon NPN transistors, R F - V H F - U H F amplification Transistors NPN silicium , amplification H F - VHF - UHF M a r k in g M arq ua ge Typo
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CB-166
OT-23)
BFW30
1000m
SO3572R
transistors BFW30
BFR 450
G1 BL
BF115
BFR53R
BFR 91 A N
SO3570
BFR 50
1300 bl
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