sot-23-5 MARK e5
Abstract: E4 SOT-23-5 mark E5 SOT-25 mark E4 SOT-23-5 4606 inverter ic transistor 4606 mosfet e5 operational Amplifier in SOT-23-5 sot-23-5 marking E5 XC6210A XC6210B
Text: XC6210 Series ETR0317_002 High Current, High Speed LDO Regulators •GENERAL DESCRIPTION The XC6210 series are precise, low noise, high current, positive voltage low dropout regulators. They are fabricated using Torex’s CMOS process. The series features a voltage reference, an error amplifier, a current limiter, and a phase compensation circuit plus a driver transistor.
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XC6210
ETR0317
sot-23-5 MARK e5
E4 SOT-23-5
mark E5 SOT-25
mark E4 SOT-23-5
4606 inverter ic
transistor 4606 mosfet
e5 operational Amplifier in SOT-23-5
sot-23-5 marking E5
XC6210A
XC6210B
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sot-23-5 MARK e5
Abstract: e5 operational Amplifier in SOT-23-5 mark E5 SOT-25 Z X C SOT-89-5 mark E4 SOT-23-5 low voltage regulator using ic 723 mark 641 sot mark E4 SOT-25 XC6210B XC6210C
Text: XC6210 Series ETR0317_002 High Current, High Speed LDO Regulators •GENERAL DESCRIPTION The XC6210 series are precise, low noise, high current, positive voltage low dropout regulators. They are fabricated using Torex’s CMOS process. The series features a voltage reference, an error amplifier, a current limiter, and a phase compensation circuit plus a driver transistor.
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XC6210
ETR0317
sot-23-5 MARK e5
e5 operational Amplifier in SOT-23-5
mark E5 SOT-25
Z X C SOT-89-5
mark E4 SOT-23-5
low voltage regulator using ic 723
mark 641 sot
mark E4 SOT-25
XC6210B
XC6210C
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XC6210
Abstract: XC6210A XC6210B XC6210C XC6210D
Text: XC6210 Series ETR0317_004 High Current, High Speed LDO Regulators •GENERAL DESCRIPTION The XC6210 series are precise, low noise, high current, positive voltage low dropout regulators. They are fabricated using Torex’s CMOS process. The series features a voltage reference, an error amplifier, a current limiter, and a phase compensation circuit plus a driver transistor.
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XC6210
ETR0317
XC6210A
XC6210B
XC6210C
XC6210D
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Untitled
Abstract: No abstract text available
Text: XC6210 Series ETR0317_002 High Current, High Speed LDO Regulators •GENERAL DESCRIPTION The XC6210 series are precise, low noise, high current, positive voltage low dropout regulators. They are fabricated using Torex’s CMOS process. The series features a voltage reference, an error amplifier, a current limiter, and a phase compensation circuit plus a driver transistor.
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XC6210
ETR0317
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Untitled
Abstract: No abstract text available
Text: Product Specification PE4150 Product Description The PE4150 is an ultra-high linearity Quad MOSFET mixer with an integrated LO amplifier. The LO amplifier allows for LO drive levels of less than 0dBm to produce IIP3 values similar to a Quad MOSFET Array driven with a 15 dBm LO
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PE4150
PE4150
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sot-89 marking E5
Abstract: E5 sot223 E5 sot89 marking E5 amplifier ceramic capacitor E5 sot-89 E5 CM2865 MARKING E5 SOT89 2865a marking E5 sot-89
Text: CM2865 A E5 350mA CMOS LDO HIGH ACCURACY VOUT 1.0% GENERAL DESCRIPTION FEATURES The CM2865/A family is a positive voltage linear regulator Very Low Dropout Voltage developed utilizing CMOS technology featured low quiescent Low Current Consumption: Typ. 30 A, Max. 35μA
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CM2865
350mA
CM2865/A
OT-89
OT-223
OT-223
sot-89 marking E5
E5 sot223
E5 sot89
marking E5 amplifier
ceramic capacitor E5
sot-89 E5
MARKING E5 SOT89
2865a
marking E5 sot-89
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vv105
Abstract: era-3 e3 ERA-3SM E3
Text: MONOLITHIC AMPLIFIERS 50Ω Drop-In & Surface Mount BROADBAND DC to 8 GHz ERA ERA-SM All specifications at 25°C J FREQ. GHz MODEL fl - fu NO. GAIN, dB Typical over frequency, GHz 0.1 1 2 3 4 6 8 MAXIMUM POWER, dBm at 2 GHz* DYNAMIC RANGE at 2 GHz* Output
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marking E5 amplifier
Abstract: ERA monolithic amplifier vv105 mini ERA-3SM VV105 3SM diode ERA-4 ERA-1 ERA-4SM nf ERA-6SM
Text: MONOLITHIC AMPLIFIERS 50Ω Drop-In & Surface Mount BROADBAND DC to 8 GHz ERA ERA-SM All specifications at 25°C J FREQ. GHz MODEL NO. fl - fu GAIN, dB Typical over frequency, GHz 0.1 1 2 3 4 6 8 THERMAL RESISat 2 GHz* at 2 GHz* TANCE Output In Out θjc,
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ERA-3SM E3
Abstract: era-3 e3 ERA-2SM E2 ERA-3SM 03 ERA-6 Mini-Circuits RF Amplifier
Text: MONOLITHIC AMPLIFIERS BROADBAND 50Ω Drop-In & Surface Mount DC to 8 GHz ERA ERA-SM All specifications at 25°C J FREQ. GHz MODEL fl - fu NO. GAIN, dB Typical over frequency, GHz 0.1 1 2 3 4 6 8 MAXIMUM POWER, dBm at 2 GHz* DYNAMIC RANGE at 2 GHz* Output
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Mini-Circuits ERA-1SM
Abstract: ERA-3SM 99 marking E5 amplifier ERA-4SM nf 3SM diode cb amplifier ERA-1SM ERA-4SM marking code k1 ERA-3SM E3
Text: MONOLITHIC AMPLIFIERS BROADBAND 50Ω Drop-In & Surface Mount DC to 8 GHz ERA ERA-SM All specifications at 25°C J FREQ. GHz MODEL NO. fl - fu GAIN, dB Typical over frequency, GHz 0.1 1 2 3 4 6 8 MAXIMUM DYNAMIC POWER, dBm RANGE at 2 GHz* at 2 GHz* TANCE see
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12Years)
Mini-Circuits ERA-1SM
ERA-3SM 99
marking E5 amplifier
ERA-4SM nf
3SM diode
cb amplifier
ERA-1SM
ERA-4SM
marking code k1
ERA-3SM E3
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e5270
Abstract: 2SA1256 2018b
Text: Ordering number:EN1056C PNP Epitaxial Planar Silicon Transistors 2SA1256 High Frequency Amp Applications Applications Package Dimensions • Ideally suited for use in FM RF amplifiers, mixers, oscillators, converters, and IF amplifiers. unit:mm 2018B [2SA1256]
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EN1056C
2SA1256
2018B
2SA1256]
230MHz
e5270
2SA1256
2018b
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era2
Abstract: ERA-50SM era-4 Mini-circuits marking code
Text: Drop-In & Surface Mount Monolithic Amplifiers BROADBAND 50Ω DC-8 GHz + RoHS compliant in accordance with EU Directive 2002/95/EC The +Suffix has been added in order to identify RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications.
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2002/95/EC)
ERA-21SM+
ERA-33SM+
ERA-50SM+
ERA-51SM+
era2
ERA-50SM
era-4
Mini-circuits marking code
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of IC 7483
Abstract: No abstract text available
Text: XC6408 Series ETR0331-005 28V Operation Voltage Regulator with Voltage Detector GENERAL DESCRIPTION The XC6408 series is a positive voltage regulator IC manufactured using CMOS process with 28V operation voltage. The series consists of a voltage reference, an error amplifier, a current limiter, a thermal shutdown circuit and a phase compensation circuit
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XC6408
ETR0331-005
XC6408D
of IC 7483
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Untitled
Abstract: No abstract text available
Text: SN54AS250A, SN74AS250A 1ĆOFĆ16 DATA GENERATORS/MULTIPLEXERS WITH 3ĆSTATE OUTPUTS SDAS137A − DECEMBER 1983 − REVISED DECEMBER 1994 • • • • SN54AS250A . . . JT PACKAGE SN74AS250A . . . DW OR NT PACKAGE TOP VIEW 4-Line to 1-Line Multiplexers That Can
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SN54AS250A,
SN74AS250A
SDAS137A
SN54AS250A
1-of-16
300-mil
AS250A
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Untitled
Abstract: No abstract text available
Text: SN54AS250A, SN74AS250A 1ĆOFĆ16 DATA GENERATORS/MULTIPLEXERS WITH 3ĆSTATE OUTPUTS SDAS137A − DECEMBER 1983 − REVISED DECEMBER 1994 • • • • SN54AS250A . . . JT PACKAGE SN74AS250A . . . DW OR NT PACKAGE TOP VIEW 4-Line to 1-Line Multiplexers That Can
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SN54AS250A,
SN74AS250A
1OF16
1-of-16
300-mil
SN54AS250A
SN74AS250A
SDAS137A
AS250A
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Untitled
Abstract: No abstract text available
Text: Document Number: MRF5S9101N Rev. 4, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9101NR1 MRF5S9101NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier
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MRF5S9101N
MRF5S9101NR1
MRF5S9101NBR1
MRF5S9101NR1
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MRF5S9101N
Abstract: 200B A113 A114 A115 AN1955 C101 JESD22 MRF5S9101NBR1 MRF5S9101NR1
Text: Freescale Semiconductor Technical Data Document Number: MRF5S9101N Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9101NR1 MRF5S9101NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier
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MRF5S9101N
MRF5S9101NR1
MRF5S9101NBR1
MRF5S9101NR1
MRF5S9101N
200B
A113
A114
A115
AN1955
C101
JESD22
MRF5S9101NBR1
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SMD A06 AMPLIFIER
Abstract: MAV-4 MMIC MAR-6 MMIC MAR-3 MAV11 MSA01104 MAV-3 MMIC MAR-1 MAV3 A04 monolithic amplifier
Text: MINI-CIRCUITS / AVANTEK MONOLITHIC AMPLIFIERS DC TO 8GHz 10GHz Usable MARKING IDENTIFICATION / EQUIVALENT Model Plastic Mini-circuits Equivalent SMD Mini-Circuits Equivalent 83mil HP/Avantek Equivalent Plastic HP/Avantek Equivalent SMD HP/Avantek Other Known
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10GHz
83mil
MSA-0135
MSA-0235
MSA-0335
MSA-0735
MSA-0835
MSA0185
MSA0285
MSA0385
SMD A06 AMPLIFIER
MAV-4
MMIC MAR-6
MMIC MAR-3
MAV11
MSA01104
MAV-3
MMIC MAR-1
MAV3
A04 monolithic amplifier
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ERA-02
Abstract: 3SM diode era06 marking code mcl VV105 ERA-1SM Mini-Circuits ERA-1SM ERA-SM WW107 ERA-3SM 99
Text: MONOLITHIC AMPLIFIERS BROADBAND 50Ω DC to 8 GHz + RoHS compliant in accordance with EU Directive 2002/95/EC The + suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications. ERA ERA-SM all specifications at 25°C
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2002/95/EC)
ERA-02
3SM diode
era06
marking code mcl
VV105
ERA-1SM
Mini-Circuits ERA-1SM
ERA-SM
WW107
ERA-3SM 99
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A1587
Abstract: 2SA1587 MARKING J1A 2SC4117
Text: TO SH IBA 2SA1587 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 587 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • • Unit in mm 2.1 ± 0.1 High Voltage : V^ e q = —120V ±0.1 “•1.25 -H Excellent hjpg Linearity
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2SA1587
A1587
-120V
2SC4117
A1587
2SA1587
MARKING J1A
2SC4117
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marking E5 amplifier
Abstract: mdb 501 E5 monolithic amplifier M11 marking OPA633 OPA633AD isolation amplifier ad
Text: DIE PRODUCTS « Ü R R -B R Q W M » OPA633 DIE High Speed Buffer AMPLIFIER DIE FEATURES DESCRIPTION • • • • The OPA633 die is a monolithic unity-gain buffer am plifier featuring very wide bandwidth and high slew rate. A dielectric isolation process incorporating both
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OPA633
200mA
OPA633
MIL-STD-883.
MIL-STD483,
marking E5 amplifier
mdb 501
E5 monolithic amplifier
M11 marking
OPA633AD
isolation amplifier ad
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marking .H2
Abstract: 3SK258 Marking H2
Text: TO SH IBA 3SK258 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK258 TV TUNER, VHF RF AMPLIFIER APPLICATIONS FM TUNER APPLICATIONS • • • Superior Cross Modulation Performance. Low Reverse Transfer Capacitance : Crss = 0.015pF Typ.
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3SK258
015pF
marking .H2
3SK258
Marking H2
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2SA1256
Abstract: 5P J TRANSISTOR MARKING
Text: O rd e rin g n u m b e r :EN 1056C - _ NO.1056C 2SA1256 PNP Epitaxial Planar Silicon Transistor High-Frequency Amp Applications A pplications • Ideally suited for use in FM RF amplifiers, mixers, oscillators, converters, and IF amplifiers. F e a tu re s
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EN1056C"
l056C
2SA1256
230MHz
5P J TRANSISTOR MARKING
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MMBR911LT1
Abstract: sot23 transistor marking ZTf TIL 414 MARKING ZTf SOT23 TRANSISTOR
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor Designed for low noise, wide dynamic range fron t-e nd amplifiers and low-noise VCO’s. Available in a surface-mountable plastic package. This Motorola small-signal plastic transistor offers superior quality and performance
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A/500
MMBR911LT1
sot23 transistor marking ZTf
TIL 414
MARKING ZTf SOT23 TRANSISTOR
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