MARKING EA MOSFET Search Results

Contextual Info: Doc No. TT4-EA-13149 Revision. 2 Product Standards MOS FET FM6L52020L FM6L52020L Silicon N-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 • Features  Marking Symbol : Y6 1.4

Contextual Info: Doc No. TT4-EA-12746 Revision. 2 Product Standards MOS FET FL6L52010L FL6L52010L Silicon P-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 • Features  Marking Symbol : Y1 1.4

Contextual Info: Doc No. TT4-EA-13066 Revision. 2 Product Standards MOS FET FL6L52060L FL6L52060L Silicon P-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 „ Features „ Marking Symbol : Y2 1.4 1.6

14538

Contextual Info: Doc No. TT4-EA-14538 Revision. 2 Product Standards MOS FET SK8603300L SK8603300L Silicon N-channel MOSFET with Schottky Barrier Diode Unit : mm 5.1 4.9 For Load-switching / For DC-DC Converter 0.22 8 7 6 5 1 2 3 4 • Features  Marking Symbol : 30 5.9 6.15

Contextual Info: Doc No. TT4-EA-13148 Revision. 2 Product Standards MOS FET FL6L52030L FL6L52030L Silicon P-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 • Features  Marking Symbol Y3 1.4 1.6

Contextual Info: Doc No. TT4-EA-13067 Revision. 2 Product Standards MOS FET FL6L52070L FL6L52070L Silicon P-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 • Features  Marking Symbol Y4 1.4 1.6

Contextual Info: Doc No. TT4-EA-14570 Revision. 1 Product Standards MOS FET FC694308ER FC694308ER Dual N-channel MOSFET Unit : mm For switching circuits 1.6 0.2 • Features 0.13 6 5 4 1 2 3  Marking Symbol : 1.2 1.6  Low drive voltage : 2.5 V drive  Halogen-free / RoHS compliant

Contextual Info: Doc No. TT4-EA-14570 Revision. 2 Product Standards MOS FET FC694308ER FC694308ER Dual N-channel MOSFET Unit : mm For switching circuits 1.6 0.2 • Features 0.13 6 5 4 1 2 3  Marking Symbol : 1.2 1.6  Low drive voltage : 2.5 V drive  Halogen-free / RoHS compliant

Contextual Info: Doc No. TT4-EA-14543 Revision. 2 Product Standards MOS FET FC694309ER FC694309ER Dual N-channel MOSFET Unit : mm For switching circuits 1.6 0.2 • Features 0.13 6 5 4 1 2 3  Marking Symbol : 1.2 1.6  Low drive voltage : 1.5 V drive  Halogen-free / RoHS compliant

mtm861270

Abstract: MTM86127 mtm13127
Contextual Info: Doc No. TT4-EA-10304 Revision. 2 Product Standards MOS FET MTM861270LBF MTM861270LBF Silicon P-channel MOSFET Unit : mm For Switching 1.6 0.2 MTM13127 in WSSMini6 type package 0.13 6 5 4 1 2 3 • Features  Marking Symbol : MK 1.4 1.6  Low Drain-source On-state Resistance : RDS on typ = 80 m  (VGS = -4 V)

Contextual Info: Doc No. TT4-EA-14216 Revision. 3 Product Standards MOS FET SK8603180L SK8603180L Silicon N-channel MOSFET Unit : mm 5.1 For Load-switching / For DC-DC Converter 4.9 0.22 8 7 6 5 1 2 3 4 • Features  Marking Symbol : 18 5.9 6.15  Low Drain-source On-state Resistance : RDS on typ = 6.7 m  (VGS = 4.5 V)

DR73-2R2-R

Abstract: GRM31CR71A106KA01L smd transistor marking j2 PWM SMD smd transistor marking u1 schematic liteon ac adapter notebook 131-5031-00 smd marking j1 schematic liteon adapter notebook AN1360
Contextual Info: Application Note 1360 ISL8012EVAL1Z: 2A Synchronous Buck Regulator with Integrated MOSFETs 2A Low Quiescent Current 1MHz High Efficiency Synchronous Buck Regulator ISL8012 is an integrated power controller rate for the 2A, 1MHz step-down regulator, which is ideal for any low

smd transistor marking j1

Abstract: smd C105
Contextual Info: Application Note 1703 ISL8502AEVAL1Z: 2A Synchronous Buck Regulator with Integrated MOSFETs The ISL8502A is a synchronous buck controller with internal MOSFETs packaged in a small 4mmx4mm QFN package. The ISL8502A can support a continuous load of 2A and has a very

Contextual Info: VN2222NC N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex VN2222NC is an enhancement-mode normallyoff transistor array consisting of four N-channel MOSFETs in a 20-Lead ceramic side-brazed DIP package. These transistors

MARKING G3 Transistor

Contextual Info: VN2222NC N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex VN2222NC is an enhancement-mode normallyoff transistor array consisting of four N-channel MOSFETs in a 20-Lead ceramic side-brazed DIP package. These transistors

125OC

Abstract: VN2222NC B11120
Contextual Info: VN2222NC N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex VN2222NC is an enhancement-mode normallyoff transistor array consisting of four N-channel MOSFETs in a 20-Lead ceramic side-brazed DIP package. These transistors

VN2222NC

Abstract: 125OC mosfet array vgs 5v 2A 3V02
Contextual Info: VN2222NC N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex VN2222NC is an enhancement-mode normallyoff transistor array consisting of four N-channel MOSFETs in a 20-Lead ceramic side-brazed DIP package. These transistors

fet data book free download

Abstract: MOSFET MARKING 3F Design of dc-dc Converters Using discrete company FET marking code 6 pin current control forward dc to dc converter DC converter IC mosfet with Integrated Schottky Diodes "P-Channel MOSFET" forward converter Japanese Transistor Data Book
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete XN0NE92 Silicon P-channel MOSFET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter • Package • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half

pl1520

Abstract: K3192
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3192 Silicon N-channel power MOSFET Unit: mm • Features 5.0±0.2 (0.7) 15.0±0.3 φ 3.2±0.1 M Di ain sc te on na tin nc ue e/ d 21.0±0.5 (3.2) 11.0±0.2 15.0±0.2 • Avalanche energy capability guaranteed

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SJ0536G Silicon P-channel MOSFET M Di ain sc te on na tin nc ue e/ d Secondary battery packs (Li ion battery, etc.) For switching circuits • Package ■ Features

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3064G Silicon N-channel MOSFET M Di ain sc te on na tin nc ue e/ d For switching circuit For rechargeable buttery pack (Li+ ion buttery, etc.) • Package ■ Features

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SJ0536G Silicon P-channel MOSFET Secondary battery packs (Li ion battery, etc.) For switching circuits • Package Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3064G Silicon N-channel MOSFET For switching circuit For rechargeable buttery pack (Li+ ion buttery, etc.) • Package Th an W is k y Th e a pro ou Fo an po du fo

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SJ0582 Silicon P-channel power MOSFET • Package • Avalanche energy capability guaranteed • High-speed switching • No secondary breakdown • Code U-G2 • Pin Name 1: Gate