MARKING EC EQ Search Results
MARKING EC EQ Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 5962-8950303GC |
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ICM7555M - Dual Marked (ICM7555MTV/883) |
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| 54HC221AJ/883C |
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54HC221AJ/883C - Dual marked (5962-8780502EA) |
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| 54ACT157/VFA-R |
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54ACT157/VFA-R - Dual marked (5962R8968801VFA) |
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| 54LS37/BCA |
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54LS37/BCA - Dual marked (M38510/30202BCA) |
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| MG8097/B |
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8097 - Math Coprocessor - Dual marked (8506301ZA) |
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MARKING EC EQ Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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UNR31AHGContextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR31AHG Silicon PNP epitaxial planar type For digital circuits • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: EC • Pin Name 1: Base 2: Emitter |
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2002/95/EC) UNR31AHG UNR31AHG | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5946G Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing • Package • Code SSSMini3-F2 • Marking Symbol: 9N • Pin Name 1: Base 2: Emitter |
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2002/95/EC) 2SC5946G | |
2SC5946
Abstract: 2SC5946G
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2002/95/EC) 2SC5946G 2SC5946 2SC5946G | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2216G Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1462G • Package ■ Features • Code SSMini3-F3 • Marking Symbol: Y • Pin Name 1: Base |
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2002/95/EC) 2SD2216G 2SB1462G | |
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Contextual Info: MKT 1818 Vishay Roederstein Metallized Polyester Film Capacitors Related Document: IEC 60384-2 FEATURES Dimensions in millimeters • Compliant to RoHS directive 2002/95/EC W Max. L Max. Marking H Max. 0.6 - 0.4 7.5 - 0.4 6.0 - 1 Ø 0.6 PERMISSIBLE AC VOLTAGES |
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2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: MKT 1818 Vishay Roederstein Metallized Polyester Film Capacitors Related Document: IEC 60384-2 FEATURES Dimensions in millimeters • Compliant to RoHS directive 2002/95/EC W Max. L Max. Marking H Max. 0.6 - 0.4 7.5 - 0.4 6.0 - 1 Ø 0.6 PERMISSIBLE AC VOLTAGES |
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2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2620G Silicon NPN epitaxial planar type For low-frequency driver amplification • Package ■ Features • Code SSMini3-F3 • Marking Symbol: 3B • Pin Name 1: Base 2: Emitter |
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2002/95/EC) 2SD2620G | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86627 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter For switching circuits • Package Overview Features Marking Symbol: PK |
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2002/95/EC) MTM86627 MTM86627 | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2623G Silicon NPN epitaxial planar type For low-frequency amplification • Features ■ Package • Code SMini3-F2 • Marking Symbol: 2V • Pin Name 1: Base 2: Emitter 3: Collector |
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2002/95/EC) 2SD2623G | |
VEBO-15VContextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2620G Silicon NPN epitaxial planar type For low-frequency driver amplification • Package ■ Features • Code SSMini3-F3 • Marking Symbol: 3B • Pin Name 1: Base 2: Emitter |
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2002/95/EC) 2SD2620G VEBO-15V | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3546G Silicon N-Channel MOSFET For switching • Features ■ Package • High-speed switching • Wide frequency band • Code SSMini3-F3 • Marking Symbol: 5F |
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2002/95/EC) 2SK3546G | |
2SD2623GContextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2623G Silicon NPN epitaxial planar type For low-frequency amplification • Features ■ Package • Code SMini3-F2 • Marking Symbol: 2V • Pin Name 1: Base 2: Emitter 3: Collector |
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2002/95/EC) 2SD2623G 2SD2623G | |
2SC3936GContextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3936G Silicon NPN epitaxial planar type For high-frequency amplification • Features ■ Package • Code SMini3-F2 • Marking Symbol: K • Pin Name 1. Base 2. Emitter 3. Collector |
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2002/95/EC) 2SC3936G 2SC3936G | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2620G Silicon NPN epitaxial planar type For low-frequency driver amplification • Package • Code SSMini3-F3 • Marking Symbol: 3B • Pin Name 1: Base 2: Emitter 3: Collector |
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2002/95/EC) 2SD2620G | |
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UNR31A3GContextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR31A3G Silicon PNP epitaxial planar type For digital circuits • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: CH • Pin Name 1: Base 2: Emitter |
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2002/95/EC) UNR31A3G UNR31A3G | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3546G Silicon N-Channel MOSFET For switching • Package • High-speed switching • Wide frequency band • Code SSMini3-F3 • Marking Symbol: 5F • Pin Name |
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2002/95/EC) 2SK3546G | |
UNR31AVGContextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR31AVG Silicon PNP epitaxial planar type For digital circuits • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: EP • Pin Name 1: Base 2: Emitter |
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2002/95/EC) UNR31AVG UNR31AVG | |
UNR32A5GContextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32A5G Silicon NPN epitaxial planar type For digital circuits • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: HC • Pin Name 1: Base 2: Emitter |
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2002/95/EC) UNR32A5G UNR32A5G | |
UNR32A8GContextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32A8G Silicon NPN epitaxial planar type For digital circuits • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: HF • Pin Name 1: Base 2: Emitter |
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2002/95/EC) UNR32A8G UNR32A8G | |
capacitor 0.33 k 100 MKT
Abstract: capacitor 0.01 j 400 MKT capacitor 0.22 k 63 MKT capacitor 0.01 k 1822 MKT
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2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 capacitor 0.33 k 100 MKT capacitor 0.01 j 400 MKT capacitor 0.22 k 63 MKT capacitor 0.01 k 1822 MKT | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4805G Silicon NPN epitaxial planar type For 2 GHz band low-noise amplification • Package ■ Features • Code SMini3-F2 • Marking Symbol: 3S • Pin Name 1: Base 2: Emitter |
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2002/95/EC) 2SC4805G | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK0665G Silicon N-channel MOSFET For switching circuits • Package ■ Features • Code SMini3-F2 • Marking Symbol: 3O • Pin Name 1: Gate 2: Source 3: Drain |
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2002/95/EC) 2SK0665G | |
UNR31A2GContextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR31A2G Silicon PNP epitaxial planar type For digital circuits • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: CF • Pin Name 1: Base 2: Emitter |
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2002/95/EC) UNR31A2G UNR31A2G | |
UNR32A1GContextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32A1G Silicon NPN epitaxial planar type For digital circuits • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: FK • Pin Name 1: Base 2: Emitter |
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2002/95/EC) UNR32A1G UNR32A1G | |