MARKING EW MOSFET Search Results

vf152

Abstract: vf170 NET125 VM MARKING CODE SOT23-5 DD157 VF140-1 VF154 NET127 NET128 DB105
Contextual Info: sig n TSM105 • CONSTANT VOLTAGE AND CONSTANT Part Number Package Temperature Range TSM105CLT TSM105CD Marking L ew ■ ■ ■ ■ ORDER CODE CURRENT CONTROL LOW VOLTAGE OPERATION PRECISION INTERNAL VOLTAGE REFERENCE LOW EXTERNAL COMPONENT COUNT CURRENT SINK OUTPUT STAGE

Contextual Info: Not Recommended for New Design A Product Line of Diodes Incorporated Use DMP10H400SK3 ZXMP10A17K 100V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C

Contextual Info: A Product Line of Diodes Incorporated DMC4040SSD 40V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features and Benefits Product Summary ID max A Device V(BR)DSS N EW PRODU CT Q1 RDS(on) max TA = 25°C Matched N & P RDS(on) - Minimizes power losses Fast switching – Minimizes switching losses

Contextual Info: CTA2N1P COMPLEX TRANSISTOR ARRAY Features N EW PRODU CT • • • • • A Combines MMBT4401 type transistor with BSS84 type MOSFET Small Surface Mount Package PNP/N-Channel Complement Available: CTA2P1N Lead Free/RoHS Compliant Note 2 "Green" Device (Note 3 and 4)

Contextual Info: DMP22D6UT N EW PRODU CT P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant Note 2

Contextual Info: DMN5L06DWK DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Mechanical Data • • • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance 1.0V max Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

DMN5L06DMK

Contextual Info: DMN5L06DMK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Mechanical Data N EW PRODU CT Features • • • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage 1.0V max Low Input Capacitance

Contextual Info: DMP2004DMK DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Mechanical Data N EW PRODU CT Features • • • • • • • • • • • • Dual P-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage VGS th < 1V Low Input Capacitance

Contextual Info: DMN2050L N-CHANNEL ENHANCEMENT MODE MOSFET Mechanical Data Features N EW PRODU CT • • • • • • • • • Low On-Resistance • 29mΩ @VGS = 4.5V • 50mΩ @VGS = 2.5V • 100mΩ @VGS = 2.0V Very Low Gate Threshold Voltage Low Input Capacitance

Contextual Info: DMN2004DMK DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Mechanical Data • • • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package

SOT-353 MARKING G2

Contextual Info: DMN32D2LDF COMMON SOURCE DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Mechanical Data N EW PRODU CT Features • • • • • • • • • • • • • Common Source Dual N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage, 1.2V max

Contextual Info: DMN601DWK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Mechanical Data N EW PRODU CT Features • • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

Contextual Info: DMG1016UDW COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features and Benefits Product Summary N EW PRODU CT Device Q1 Q2 V BR DSS 20V ID RDS(ON) TA = 25°C 0.45 @ VGS = 4.5V 1066mA 0.75 @ VGS =- 4.5V -845mA • Low On-Resistance • Low Gate Threshold Voltage

Contextual Info: DMN2215UDM DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features N EW PRODU CT • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance • 100mΩ @VGS = 4.5V, ID = 2.5A • 140mΩ @VGS = 2.5V, ID = 1.5A

Contextual Info: DMN2004TK N EW PRODU CT N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected up to 2kV

Contextual Info: DMN2041L N EW PRODU CT N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant Note 1

Contextual Info: DMG1024UV N EW PRODU CT DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

Contextual Info: DMG2302U N EW PRODU CT N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2)

DMS2120LFWB

Contextual Info: DMS2120LFWB N EW PRODU CT P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR Features Mechanical Data • • • • • • • • • • • Low On-Resistance • 95mΩ @VGS = -4.5V • 120mΩ @VGS = -2.5V • 150mΩ typ @VGS = -1.8V Low Gate Threshold Voltage, -1.3V Max

Contextual Info: 2N7002VC/VAC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET N EW PRODU CT Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

Contextual Info: A Product Line of Diodes Incorporated DMC2700UDM 20V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • • • • • N EW PRODU CT ID max Device V BR DSS RDS(on) max TA = 25°C (Notes 4) Q1 0.4Ω @ VGS = 4.5V

Contextual Info: DMN26D0UT N EW PRODU CT N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • • Low On-Resistance: • 3.0 Ω @ 4.5V • 4.0 Ω @ 2.5V • 6.0 Ω @ 1.8V • 10 Ω @ 1.5V Very Low Gate Threshold Voltage, 1.0V max

Contextual Info: DMG4468LFG N EW PRODU CT N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2)

Contextual Info: DMG6402LDM N EW PRODU CT N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • Low RDS ON Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) Qualified to AEC-Q101 Standards for High Reliability