MARKING FS SOT Search Results

fq sot-23

Abstract: marking FQ transistor MARKING 560 pnp sot23 transistor sot23 MARKING 560 2SA1037 R 560 SOT23
Contextual Info: 2SA1037 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Excellent hFE linearity. — Complments the 2SC2412 MARKING : FQ, FR, FS Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

2SC2412

Abstract: marking FQ 2SA1037 transistor marking fq
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA1037 SOT-23 TRANSISTOR PNP FEATURES ∙ Excellent hFE linearity. ∙ Complments the 2SC2412 1. BASE 2. EMITTER 3. COLLECTOR MARKING : FQ, FR, FS MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SA1037AK

Abstract: 2SC2412K transistor marking fq
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SA1037AK SOT-23-3L TRANSISTOR PNP FEATURES z Excellent hFE linearity. z Complments the 2SC2412K. 1. BASE 2. EMITTER 3. COLLECTOR MARKING : FQ, FR, FS MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA1037 SOT-23 TRANSISTOR PNP 3 FEATURES ∙ Excellent hFE linearity. ∙ Complments the 2SC2412 1 1. BASE 2 2. EMITTER 3. COLLECTOR MARKING : FQ, FR, FS MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: 2SA1037AK SOT-23-3L Transistor PNP SOT-23-3L 1. BASE 2.92 2. EMITTER 0.35 3. COLLECTOR 1.17 Features — — 2.80 Excellent hFE linearity. Complments the 2SC2412K. 1.60 0.15 MARKING : FQ, FR, FS 1.90 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

BF543

Abstract: triode sot23
Contextual Info: BF543 Silicon N-Channel MOSFET Triode 3
For high-frequency stages up to 300 MHz preferably in FM applications
IDSS = 4mA, g fs = 12mS 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF543 LDs Pin Configuration

marking code 11s

Abstract: MARKING CODE 21S BF543
Contextual Info: BF543 Silicon N-Channel MOSFET Triode 3
For high-frequency stages up to 300 MHz preferably in FM applications
IDSS = 4mA, g fs = 12mS 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF543 LDs Pin Configuration

Contextual Info: BF543 Silicon N-Channel MOSFET Triode 3
For high-frequency stages up to 300 MHz preferably in FM applications
IDSS = 4mA, g fs = 12mS 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF543 LDs Pin Configuration

Contextual Info: SIEMENS BCR 112W NPN Silicon Digital Transistor Type Marking O rdering Code Pin Configuration BCR 112W W Fs Q62702-C 2284 1= B Package 2 = E 3 = C SOT-323 M axim um Ratings Param eter Sym bol C ollector-em itter voltage ^CEO 50 C ollector-base voltage ^CBO

BF 22 W

Contextual Info: BF 543 Silicon N-Channel MOSFET Triode 3
For high-frequency stages up to 300 MHz preferably in FM applications
ISDD = 4mA, g fs = 12mS 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF 543 LDs Pin Configuration

UL26

Abstract: 6L-USBLC6-2SC6 USBLC6-2SC6 STMicroelectronics date code format ecopack SMP75-8 JESD97 marking illustrations
Contextual Info: USBLC6-2 Very low capacitance ESD protection Features • ■ ■ ■ ■ ■ 2 data lines protection Protects VBUS Very low capacitance: 3.5 pF max. Very low leakage current: 150 nA max. SOT-666 and SOT23-6L packages RoHS compliant SOT23-6L USBLC6-2SC6 Benefits

UL26

Contextual Info: USBLC6-2 Very low capacitance ESD protection Features • 2 data-line protection ■ Protects VBUS ■ Very low capacitance: 3.5 pF max. ■ Very low leakage current: 150 nA max. ■ SOT-666 and SOT23-6L packages ■ RoHS compliant SOT23-6L USBLC6-2SC6 Figure 1.

USBLC6-2

Abstract: UL26 USBLC6-2P6 marking illustrations
Contextual Info: USBLC6-2 Very low capacitance ESD protection Features • 2 data-line protection ■ Protects VBUS ■ Very low capacitance: 3.5 pF max. ■ Very low leakage current: 150 nA max. ■ SOT-666 and SOT23-6L packages ■ RoHS compliant SOT23-6L USBLC6-2SC6 Figure 1.

UL46

Abstract: JESD97 SMP75-8 USBLC6-4
Contextual Info: USBLC6-4 Very low capacitance ESD protection Features • 4 data lines protection Protects VBUS ■ Very low capacitance: 3 pF typ. ■ SOT23-6L package ■ RoHS compliant ■ Benefits ■ ■ ■ ■ ■ ■ Very low capacitance between lines to GND for optimized data integrity and speed

UL46

Contextual Info: USBLC6-4 Very low capacitance ESD protection Features • 4 data-line protection ■ Protects VBUS ■ Very low capacitance: 3 pF typ. ■ SOT23-6L package ■ RoHS compliant SOT23-6L Figure 1. Benefits ■ ■ Very low capacitance between lines to GND for

marking FR PNP SOT323

Abstract: TRANSISTOR BL 560 sot marking code FQ TRANSISTOR FQ 2SA1576AW 2SC4081 marking code fq sot323 transistor marking marking FR SOT323 marking code fs 1 sot 323
Contextual Info: BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor FEATURES z Power dissipation. PC=200mW z Excellent HFE Linearity. z Complements the 2SC4081. 2SA1576AW Pb Lead-free APPLICATIONS z General purpose application. SOT-323 ORDERING INFORMATION

2sa1037

Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z z 2SA1037 Pb Low IC.ICMAX. =-150mA. Lead-free Low VCE sat . Ideal for low-voltage operation. APPLICATIONS z Ideal for low-voltage operation. SOT-23 ORDERING INFORMATION

2SA1037

Abstract: transistor marking fq TRANSISTOR FQ SILICON TRANSISTOR FS 2 fq sot-23 FR SOT23 MARKING marking FQ
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z z 2SA1037 Pb Low IC.ICMAX. =-150mA. Lead-free Low VCE sat . Ideal for low-voltage operation. APPLICATIONS z Ideal for low-voltage operation. SOT-23 ORDERING INFORMATION

Contextual Info: Central" BAW100 Semiconductor Corp. SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR BAW100 consists of two electrically isolated high speed silicon switching diodes packaged in an epoxy molded SOT-143 surface mount case. This

Silicon N-Channel Junction FET sot23

Abstract: lcr tuner
Contextual Info: KSK211 SILICON N-CHANNEL JUNCTION F ET FM TUNER VHF AMPLIFIER SOT-23 . NF =25dB TYP • I Y fs I -9 .0 mS (TYP) ABSOLUTE MAXIMUM RATINGS (TA-25TC ) C haracteristic Sym bol Gate-Drain Voltage Qate-Current Power Dissipation Junction Temperature Storage Temperature

BF861

Abstract: BF861A BF861B BF861C bf861 application
Contextual Info: BF861A; BF861B; BF861C N-channel junction FETs Rev. 04 — 24 September 2004 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical junction field effect transistors in a SOT23 package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against

MMBFJ270

Contextual Info: MMBFJ270 P-CHANNEL SWITCH FEATURES • This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: SOT-23, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026

VN50300T

Abstract: VN50300L VND050 VN50300 VN50300 L
Contextual Info: VN50300 SERIES N-Channel Enhancement-Mode MOS Transistors TO-92 TO-226AA PRODUCT SUMMARY PART NUMBER V (BR)DSS .B fS S äl •d (V) "W (A) PACKAGE VN50300L 500 300 0.033 TO-92 VN50300T 500 300 0.022 SOT-23 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN TOP VIEW SOT-23

BAS40W

Abstract: BAS40W-04 BAS40W-05 BASW40-06
Contextual Info: BAS40W/-04/-05/-06 SURFACE MOUNT SCHOTTKY BARRIER DIODE Features SOT-323 Low Forward Voltage Drop Fast Switching Ultra-Small Surface Mount Package PN Junction Guard Ring for Transient and ESD Protection T B u Mechanical Data_ • • • •