MARKING G1V Search Results

SIDAC

Abstract: k1v diode tyristor
Contextual Info: Ref. No. 84-116e November 8, 2006 Messrs. Change Notice of the Ink Color and the Type Name Indication for the Marking of SIDAC/TSS Dear Valued Customer, We hereby inform you of the change of the ink color and the type name indication for the marking of SIDAC/TSS. Please see below for the details:

g1va8c

Contextual Info: SIDAC G1V A 8C Absolute Maximum Ratings M 4k U& M M Storage Temperature Operating Junction Temperature ^ "7^J± Maximum Off-state Voltage Repetitive Peak On-state Current Critical Rate of Rise of On-state Current ÜÄSlJ • T s tg - 4 0 ~ 125 °C Tj 125 °c

g1va10c

Abstract: A10C
Contextual Info: SIDAC G1V A 10C Absolute Maximum Ratings M Item 4k pÜt!" i M fé f t Jp-fô Ratings U nit U&MM Storage Temperature T stg -4 0 ~ 125 °C Operating Junction Temperature ^ "7^J± Tj 125 °c Maximum Off-state Voltage V drm (A) 90 V 1 A 80 A 80 A /(is It RMS On-state Current

AX078

Abstract: G1VB22C GL SIDAC
Contextual Info: SIDAC -G1V®22C T /= 25°C / U nless otherw ise specified Absolute Maximum Ratings SB-t a m Item fSfffiK Operating Junction Temperature 7 M S : Maximum Off-state Voltage M i j i t ><!# / ^ y U 8£_h#^ Critical Rate of Rise of On-state Current S s iW •

AX06

Contextual Info: Package : AX06 ０ ５ φ０６ . ±０． ●捺印面展開図 Marking A方向 GV4 69 ２ ７５ . ±２ ０５ . ５＋ −０１ . ２ ７５ . ±２ ０． ２ φ２６ . ＋ −０． １ K方向 品名略号 Type No. [Unit : mm] G1V（A）14C：GV4

GK MARK

Abstract: AX078
Contextual Info: Package : AX078 .５ φ０７ . ８±００ ●捺印面展開図 Marking ２ ７５ . ±２ ０５ . ５＋ −０.1 ２ ７５ . ±２ A方向 GK 69 ０２ . φ４.0＋ −０１ . K方向 品名略号 Type No. [Unit : mm] G1V（B）20C：GK アノードマーク

g1vB8c

Contextual Info: SIDAC G1V B 8C Absolute Maximum Ratings M Item i U&M M Storage Temperature Operating Junction Temperature ^ "7 ^ J ± Maximum Off-state Voltage Repetitive Peak On-state Current Critical Rate of Rise of On-state Current Ü Ä ß l) • tftS Ilfê tï S ^ ~7

G1VL22C

Abstract: 0z marking
Contextual Info: S I D A C . : G1VL22C Absolute Maximum Ratings Jp-fô T stg -40 ~ 125 °C Tj 125 °c V drm A 190 V 1 280 150 150 A 4k Storage Temperature Operating Junction Temperature ^ "7^J± Maximum Off-state Voltage It RMS On-state Current Critical Rate of Rise of On-state Current

AX078

Contextual Info: Package : AX078 .５ φ０７ . ８±００ ●捺印面展開図 Marking A方向 GN 69 ２ ７５ . ±２ ０５ . ５＋ −０.1 ２ ７５ . ±２ ０２ . φ４０ . ＋ −０１ . K方向 品名略号 Type No. [Unit : mm] G1V（B）24C：GN アノードマーク

GL22C

Abstract: AX078
Contextual Info: Package : AX078 .５ φ０７ . ８±００ ●捺印面展開図 Marking ２ ７５ . ±２ ０５ . ５＋ −０.1 ２ ７５ . ±２ A方向 GL 69 ０２ . φ４.0＋ −０１ . K方向 品名略号 Type No. [Unit : mm] G1V（B）22C：GL アノードマーク

AX078

Abstract: g1vB24c z314
Contextual Info: S ID A C -G1V®24C T /= 25°C / Unless otherwise specified Absolute Maximum Ratings m Item SB-t a fS fffiK S to ra g e Tem perature O pe ra ting Ju n ctio n Tem perature ^ 7MS: M a xim u m O ff-sta te Voltage Mijit ><!# ^ yWiffii y U 8£_h#^ C ritica l Rate o f Rise o f O n -sta te C urrent

Contextual Info: S I D A C . : G1VL10C Absolute M axim um Ratings pÛ77 Item 4k U tfM M Storage Temperature Operating Junction Temperature ^ "7^J± Maximum Off-state Voltage /•'JV.X if Repetitive Peak On-state Current Ü Ä ß l • t ftS Ilf ê tï T stg - 4 0 ~ 125

Contextual Info: S I D A C . : G1VL8C A bsolute M axim um Ratings M Item i U tfM M Storage Temperature ilc'a'B$ Operating Junction Temperature ^ "7^J± Maximum Off-state Voltage j^y\/7s i t Critical Rate of Rise of On-state Current Ü Ä ß l • t f tS I lfê t ï - 4 0 ~ 125

g1vB23c

Contextual Info: S ID A C -G1V®23C T /= 25°C / Unless otherwise specified Absolute Maximum Ratings m Item SB-t a fSfffiK S to ra g e Tem perature O pe ra ting Ju n ctio n Tem perature ^ 7MS: M a xim u m O ff-sta te Voltage Mi j i t ><!# ^ yWiffii y U8£_h#^ C ritica l Rate o f Rise o f O n -sta te C urrent

SIDAC

Abstract: AX06 g1va12c
Contextual Info: SIDAC. G1V A 12C Absolute Maximum Ratings m Item a fSfffiK »•S-SWK O pera tin g Ju n ctio n Tem perature ^ 7MS: M axim um O ff-sta te Voltage Mi j i t ><!# ^ yWiffii y U8£_h#^ C ritical Rate o f Rise o f O n -sta te C urrent Item 7 — — a °C Tj 125

g1va20c

Abstract: AX06 TO10
Contextual Info: S ID A C -G1V A 20C A b solu te M axim um Ratings m Item SB-t a & fSfffiK »• S-S W K O pe ra ting Ju n ctio n Tem perature ^ 7MS: M a xim u m O ff-sta te Voltage M ijit ><!# ^ yWiffii Unit T stg -4 0 ~ 125 °C Tj 125 °c V d r m (A) 170 V 1 A 80 A 80

g1vB23c

Abstract: g1vB24c marking G1V ptl7
Contextual Info: i,g G1V B 23C/G1V(B)24C A b s o lu te M a x im u m R a tin g s M Item i U&MM Storage Temperature Operating Junction Temperature ^ "7^J± Critical Rate of Rise of On-state Current >r 7 W & Off-state Current 7 1 ^ “ ? t — 7 ’ —HEijfL 150 °c I tem 200

nec b1007

Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
Contextual Info: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,

FET marking code g5d

Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

nec mosfet marked v75

Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

marking code C1E SMD Transistor

Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Contextual Info: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17

G1VL22C

Abstract: sidac V-I characteristics of SIDAC
Contextual Info: SIDACI Absolute Maximum Ratings m Item a Operating Junction Temperature 7M S : Maximum Off-state Voltage ><!# ^ yWiffii Ratings 190 V 1 A T/=98°C , 50H z sine w a v e 8 =180° A 150 tS] a 280 f= 5Hz Ta=25°C , p u lse w id th to= 10/(s, sine w av e 150

V-I characteristics of SIDAC

Abstract: G1VL10C
Contextual Info: SIDACI T /= 25°C / Unless otherwise specified A b solu te M axim um Ratings SB-t a m Item fSfffiK S to ra g e Tem perature »•S-SWK O pe ra ting Ju n ctio n Tem perature ^ 7MS: M a xim u m O ff-sta te Voltage Mi j i t > < !# ^ yWiffii y USE-h#^ C ritica l Rate o f Rise o f O n -sta te C urrent

marking code g2s

Contextual Info: SIEMENS < *,0 0 5 S Silicon N-Channel MOSFET Tetrode •For low-noise, high gain-controlled input stages up to 1GH; ■Operating voltage 5V 1Integrated stabilized bias network X AGC o HF oIn p u t JX-Ih D ra in G2 I HF O u tp u t + DC G1 1 — r GND ESD: Electrostatic discharge sensitive device, observe handling precaution!