MARKING GB5 Search Results

Contextual Info: Bulletin I27302 01/07 GB50XF60K IGBT SIXPACK MODULE VCES = 600V Features IC = 48A @ TC=80°C • Low VCE on Non Punch Through IGBT Technology • Low Diode VF tsc > 10 s @ TJ=150°C • 10μs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft

GB50XF120K

Contextual Info: Bulletin PD - 94567 rev.A 05/03 GB50XF120K IGBT SIK PACK MODULE VCES = 1200V Features • • • • • Low VCE on Non Punch Through IGBT Technology Low Diode VF 10µs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics

GB50XF120K

Contextual Info: Bulletin PD - 94567 rev.B 08/03 GB50XF120K IGBT SIXPACK MODULE VCES = 1200V Features • • • • • Low VCE on Non Punch Through IGBT Technology Low Diode VF 10µs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics

ECONO2-6PACK IGBT module

Abstract: IR E78996 GB50XF120K IGBT 6PACK MODULE IRF E78996 E78996 IR GB50XF120K ECONO-2
Contextual Info: PD - 94567 GB50XF120K IGBT 6PACK MODULE Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics • Positive VCE (on) Temperature Coefficient

Contextual Info: Bulletin I27302 01/07 GB50XF60K IGBT SIXPACK MODULE VCES = 600V Features IC = 48A @ TC=80°C • Low VCE on Non Punch Through IGBT Technology • Low Diode VF tsc > 10 s @ TJ=150°C • 10μs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft

95089

Abstract: ECONO2-6PACK IGBT module GB50XF60K
Contextual Info: GB50XF60K Vishay High Power Products IGBT Sixpack Module, 48 A FEATURES • Low diode VF • 10 µs short circuit capability RoHS • Square RBSOA COMPLIANT • Low VCE on non punch through IGBT technology • HEXFRED antiparallel diode with ultrasoft reverse

Contextual Info: Bulletin I27283 11/06 GB50XF120K IGBT SIXPACK MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 50A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ=150°C • HEXFRED Antiparallel Diode with Ultrasoft

95089

Abstract: GB50XF120K IGBT 6PACK MODULE GB50XF120K
Contextual Info: GB50XF120K Vishay High Power Products IGBT Sixpack Module, 50 A FEATURES • Low diode VF • 10 µs short circuit capability RoHS • Square RBSOA COMPLIANT • Low VCE on non punch through IGBT technology • HEXFRED antiparallel diode with ultrasoft reverse

NV17

Abstract: 942 rectifier diode
Contextual Info: GB50XF120K Vishay High Power Products IGBT Sixpack Module, 50 A FEATURES • Low diode VF • 10 µs short circuit capability RoHS • Square RBSOA COMPLIANT • Low VCE on non punch through IGBT technology • HEXFRED antiparallel diode with ultrasoft reverse

Contextual Info: Bulletin I27309 01/07 GB50RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 48A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft

Contextual Info: Bulletin I27309 01/07 GB50RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 48A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft

OF IGBT

Abstract: GB50RF60K
Contextual Info: GB50RF60K Vishay High Power Products IGBT PIM Module, 48 A FEATURES • • • • • • • • • • • ECONO2 PIM PRODUCT SUMMARY Low VCE on non punch through IGBT technology Low diode VF 10 µs short circuit capability Square RBSOA HEXFRED antiparallel diode with ultrasoft

d5621A/B

Abstract: M12088A M23088A/B D5011a/b M23088C/DEG M12057A M23088A m15088a d5611 d5011A/B datasheet
Contextual Info: Company Profile GREEGOO Electric Co., Ltd, located in Wenzhou, the electric capital of China, is specialized in developing, manufacturing and distributing operator interface components, such as pilot lights, push buttons, selector switches, control stations, based LED bulbs, LED display, LED signal tower, motor siren, buzzer and cabinet

ovenaire

Abstract: ovenaire OSC multiturn trimmer capacitor ovenaire 10 mhz marking gb5 Oak Frequency Control TCXO mc 37 TCXO mc ovenaire oak frequency control 10 mhz
Contextual Info: OAK/MC COY ELEK-, OVENAIRE 5bE » • b72ö510 ÜDDGS7S 12T Hi O K li DIMENSIONS IN MILLIMETERS ±.76 38.10SQUARE Hl FREQUENCY ADJUSTMENT AOCESS REMOVE SEAL SCREW afín OVENAIRE • AUDIO • CARPENTER C H A R L O T T f S V i m . V IH C W U U S A E FREQ. 10.OOOMH2

Contextual Info: PD 9.871 A International S»1 Rectifier IRF7101 H EXFET Pow er M O SFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dual N-Channel M OSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching S1H

Contextual Info: TC7PG04FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7PG04FU Dual Inverter Features • High-level output current: IOH/IOL = ±8 mA min at VCC = 3 V • High-speed operation: tpd = 2.8 ns (typ.) at VCC = 3.3 V, 15 pF • Operating voltage range: VCC = 0.9 to 3.6 V

MARKING CODE GA7

Abstract: MARKINGCODEGA7
Contextual Info: MMBZ4617-G to MMBZ4627-G www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES • Silicon planar low noise Zener diodes 3 • 350 mW high quality voltage regulator designed for low leakage, low current and low noise applications • ± 5 % tolerance on VZ

Contextual Info: Raytheon Electronics Semiconductor Division ANALOG R C 6704 Triple Fixed G ain V id e o A m plifier with Separate Enable Inputs Features Applications • Triple video amplifier w ith internal resistors to set gains to +2, +1, and -1 • Independently enabled amplifiers

GP5NC60KD

Abstract: STGB5NC60KD STGB5NC60KDT4 STGF5NC60KD STGP5NC60KD
Contextual Info: STGP5NC60KD - STGF5NC60KD STGB5NC60KD N-CHANNEL 5A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH IGBT TARGET SPECIFICATION Figure 1: Package Table 1: General Features TYPE STGB5NC60KD STGF5NC60KD STGP5NC60KD • ■ ■ ■ ■ VCES VCE sat (Max)

samsung lcd tv circuits diagrams

Abstract: LTM150XH-T01 BA5 marking samsung lcd tv power supply diagrams diagram samsung LCD TV circuits diagram samsung LCD TV power circuits samsung "lcd tv" pixel circuits diagram 02VS 2SK1059 2SK1399
Contextual Info: Approval TO : DATE : SAMSUNG SAMSUNGTFT-LCD TFT-LCD MODEL MODEL NO. NO. : LTM150XH-T01 LTM150XH-T01 APPROVED BY : Any Modification of Spec is not allowed without SEC’s permission. Approved by : PREPARED BY : AMLCD Technical Customer Service Team SAMSUNG ELECTRONICS CO., LTD.

STGB5NC60KDT4

Abstract: STGF5NC60KD STGP5NC60KD GP5NC60KD STGB5NC60KD
Contextual Info: STGP5NC60KD - STGF5NC60KD STGB5NC60KD N-CHANNEL 5A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH IGBT TARGET SPECIFICATION Figure 1: Package Table 1: General Features TYPE STGB5NC60KD STGF5NC60KD STGP5NC60KD • ■ ■ ■ ■ ■ VCES VCE sat (Max)

TC7PG04FU

Contextual Info: TC7PG04FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7PG04FU Dual Inverter Features • High output current • Super high speed operation : tpd = 2.8 ns typ. at VCC = 3.3 V, 15 pF • Operating voltage range • 5.5-V tolerant inputs •

Contextual Info: TC7PG04FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7PG04FU Dual Inverter Features • High output current • Super high speed operation : tpd = 2.8 ns typ. at VCC = 3.3 V, 15 pF • Operating voltage range • 5.5-V tolerant inputs •

GP5NC60KD

Abstract: STGB5NC60KD STGB5NC60KDT4 STGF5NC60KD STGP5NC60KD uc pfc
Contextual Info: STGP5NC60KD - STGF5NC60KD STGB5NC60KD N-CHANNEL 5A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH IGBT TARGET SPECIFICATION Figure 1: Package Table 1: General Features TYPE STGB5NC60KD STGF5NC60KD STGP5NC60KD • ■ ■ ■ ■ ■ VCES VCE sat (Max)