MARKING HD SOT89 Search Results

marking HD SOT89

Abstract: SOT89 MARKING CODE sOT23 marking HD SOT 89 marking CODE package marking sot 223 HD SOT89
Contextual Info: Reel Labeling information Device Marking information Case Each reel is labeled with the following information: DPAK Central Part Num ber Customer Part Num ber Purchase Order Num ber Quantity Lot Number Date Code Ship Date Marking Code * * Applies to S O T -2 3 , S O T -1 4 3 , S O T -323,

transistor 103

Abstract: TRANSISTOR SMD MARKING CODE QR s47 IC smd marking code PBSS4240X TRANSISTOR SMD CODE PACKAGE SOT89 4 marking HD SOT89
Contextual Info: PBSS4240X 40 V, 2 A NPN low VCEsat BISS transistor 15 October 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 Surface-Mounted Device (SMD) plastic package. PNP complement:

NXP date code marking SOT89

Contextual Info: SO T8 9 PBHV8115X 150 V, 1 A NPN high-voltage low VCEsat BISS transistor 9 December 2013 Product data sheet 1. General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.

Contextual Info: SO T8 9 PXT2222A NPN switching transistors 2 April 2014 Product data sheet 1. General description NPN switching transistor in a medium power flat lead SOT89 SC-62/TO-243 SurfaceMounted Device (SMD) plastic package. PNP complement: PXT2907A 2. Features and benefits

TRANSISTOR SMD CODE PACKAGE SOT89 4

Contextual Info: PBSS5240X 40 V, 2 A PNP low VCEsat BISS transistor 19 October 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement:

Contextual Info: SO T8 9 PBHV8540X 500 V, 0.5 A NPN high-voltage low VCEsat BISS transistor 5 December 2013 Product data sheet 1. General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.

Contextual Info: SO T8 9 PBHV9040X 500 V, 0.25 A PNP high-voltage low VCEsat BISS transistor 9 December 2013 Product data sheet 1. General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.

TRANSISTOR SMD MARKING CODE 6d

Abstract: smd transistor 6d
Contextual Info: PBSS4021NX 20 V, 7 A NPN low VCEsat BISS transistor 9 October 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP

Contextual Info: PBSS4041NX 60 V, 6.2 A NPN low VCEsat BISS transistor 11 December 2012 Product data sheet 1. Technical summary NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.

sot089

Contextual Info: PBSS4041NX 60 V, 6.2 A NPN low VCEsat BISS transistor 10 October 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP

Contextual Info: SO T8 9 BSS192 240 V, P-channel vertical D-MOS transistor 12 December 2014 Product data sheet 1. General description P-channel enhancement mode vertical Double-Diffused Field-Effect Transistor DMOSFET in a SOT89 (SC-62) medium power and flat lead Surface Mounted Device

Contextual Info: SO T8 9 BSS87 200 V, N-channel vertical D-MOS transistor 9 December 2014 Product data sheet 1. General description N-channel enhancement mode vertical Double-Diffused Field-Effect Transistor DMOSFET in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device

TRANSISTOR SMD MARKING CODE 6d

Abstract: smd transistor 6d PBSS4021NX
Contextual Info: PBSS4021NX 20 V, 7 A NPN low VCEsat BISS transistor 11 December 2012 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.

IC 7410

Abstract: IC 7410 datasheet marking code cj cp741 CP341 NPN PNP sot-563 sot 123f Schottky diodes tvs SMC MARKING marking code 45W CPD76V
Contextual Info: Tiny Leadless Module Guide Central Semiconductor Corp. TLM Tiny Leadless Modules TLM Schottky Rectifiers Selection Guide TYPE NO. VRRM IF VF @ IF V MAX (A) MAX (V) MAX (A) 40 1.0 0.55 1.0 CTLSH1-40 trr †TYP. (ns) MAX CD †TYP. (pF) MAX CHIP PROCESS

KGF1633

Abstract: GAAS FET AMPLIFIER 3400 Mhz
Contextual Info: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0034-38-72 ¡ electronic components KGF1633 ¡ electronic components KGF1633 Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1633, housed in a SOT-89 type plastic-mold package, is a discrete GaAs power FET that

KGF1638

Abstract: GaAS fet sot89 112MA1 marking HD SOT89
Contextual Info: This version: Jan. 1998 Previous version: Jun. 1996 E2Q0036-27-X3 ¡ electronic components KGF1638 ¡ electronic components KGF1638 Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1638, housed in a SOT-89 type plastic-mold package, is a discrete GaAs power FET that

2SK2973

Abstract: hd 9729 75458 151821 45980 marking 668 transistor t 2190 transistor marking 551 sot-89 marking c7 sot-89 12089
Contextual Info: MITSUBISHI RF POWER MOS FET 2SK2973 DESCRIPTION 2SK2973 is a MOS FET type transistor specifically designed for OUTLINE DRAWING Dimensions in mm 4.6MAX VHF/UHF power amplifiers applications. 1.5±0.1 1.6±0.2 FEATURES • High power gain:Gpe≥13dB @VDD=9.6V,f=450MHz,Pin=17dBm

KGF1312

Abstract: jan 8168 marking HD SOT89
Contextual Info: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0028-38-72 ¡ electronic components KGF1312 ¡ electronic components KGF1312 Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1312, housed in a SOT-89 type plastic-mold package, is a discrete UHF-band power FET

KGF1323

Abstract: ma 17393 6039 marking T4 0660
Contextual Info: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0030-38-72 ¡ electronic components KGF1323 ¡ electronic components KGF1323 Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1323, housed in a SOT-89 type plastic-mold package, is a discrete UHF-band power FET

KGF1323C

Abstract: DCS1800 KGF1323
Contextual Info: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0031-38-72 ¡ electronic components KGF1323C ¡ electronic components KGF1323C Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1323C, housed in a SOT-89 type plastic-mold package, is a KGF1323 based discrete

KGF1631

Contextual Info: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0033-38-72 ¡ electronic components KGF1631 ¡ electronic components KGF1631 Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1631, housed in a SOT-89 type plastic-mold package, is a discrete GaAs power FET that

KGF1323F

Abstract: MARKING TACS SOT GaAs FET sot89
Contextual Info: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0032-38-72 ¡ electronic components KGF1323F ¡ electronic components KGF1323F Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1323F, housed in a SOT-89 type plastic-mold package, is a KGF1323-based discrete

KGF1283

Abstract: 9346 SOT89 tc 8066 3268 11978 17458
Contextual Info: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0026-38-72 ¡ electronic components ¡ electronic components KGF1283 KGF1283 Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1283, housed in a SOT-89 type plastic-mold package, is a discrete UHF-band power FET

KGF1284

Contextual Info: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0027-38-72 ¡ electronic components KGF1284 ¡ electronic components KGF1284 Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1284, housed in a SOT-89 type plastic-mold package, is a discrete power FET with