MARKING IGF Search Results

Contextual Info: J105 / J106 / J107 N-Channel Switch Description This device is designed for analog or digital switching applications where very low on resistance is mandatory. Sourced from Process 59. Ordering Informations Part Number Marking J105 J105 J106 J106 J107 J107

MMBFJ305

Contextual Info: MMBFJ305 N-Channel RF Amplifier SOT-23 Features G • This device is designed primarily for electronic switching applications such as low On Resistance analog switching. • Sourced from process 50. S Marking : 6Q D Note : Drain & Source are interchangeable.

MMBFJ305

Abstract: RF POWER marking 556
Contextual Info: MMBFJ305 N-Channel RF Amplifier SOT-23 Features G • This device is designed primarily for electronic switching applications such as low On Resistance analog switching. • Sourced from process 50. S Marking : 6Q D Note : Drain & Source are interchangeable.

J201

Abstract: MMBFJ201
Contextual Info: J201 - J202 / MMBFJ201 - MMBFJ203 N-Channel General Purpose Amplifier • This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. • Sourced from Process 52. TO-92 SOT-23 3 2 Marking J201

J201

Abstract: MMBFJ203 J202 MMBFJ201 2J201 MMBFJ202 marking IGF
Contextual Info: J201 - J202 / MMBFJ201 - MMBFJ203 N-Channel General Purpose Amplifier • This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. • Sourced from Process 52. TO-92 SOT-23 3 2 Marking J201

PF5103

Contextual Info: PF5103 tm N-Channel Switch Features • This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. • Sourced from process 51. TO-92 1 2 3 Marking : PF5103 1. Drain 2. Source 3. Gate Absolute Maximum Ratings *

smd hee

Abstract: smdj18ca
Contextual Info: 上海晨启半导体有限公司 SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD • 3000 Watt Peak Power ■ Dimension Dim SMD DO-214AB ■ Specification Type Number (Uni) (Bi) Marking Millimeters Inches Min Max Min Max A 6.60 7.11 0.260 0.280 B 5.59 6.22 0.220

C-030

Abstract: MMBFJ110
Contextual Info: MMBFJ110 N-Channel Switch SuperSOT-3 Features 3 • This device is designed for digital switching applications where very low on resistance is mandatory. • Sourced from process 58. 2 Marking : 110 1 1. Drain 2. Source 3. Gate Absolute Maximum Ratings* TA=25°C unless otherwise noted

MMBF5434

Abstract: marking 61z semiconductor body marking supersot-3
Contextual Info: MMBF5434 MMBF5434 N-Channel Switch • This device is designed for digital switching applications where very low on resistance is mandatory. • Sourced from Process 58. 3 2 SuperSOT-3 1 Marking: 61Z 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * TA=25°C unless otherwise noted

Contextual Info: MMBFJ110 N-Channel Switch SuperSOT-3 Features 3 • This device is designed for digital switching applications where very low on resistance is mandatory. • Sourced from process 58. 2 Marking : 110 1 1. Drain 2. Source 3. Gate Absolute Maximum Ratings* TA=25°C unless otherwise noted

J109

Contextual Info: N-Channel Switch 3 • This device is designed for digital switching applications where very low on resistance is mandatory. • Sourced from Process 58. 2 1 TO-92 1. Drain 2. Source 3. Gate 1 SuperSOT-3 Marking: I8 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * TA=25°C unless otherwise noted

2n4856

Abstract: 2n4856a
Contextual Info: 2N4856 2N4856A w w w. c e n t r a l s e m i . c o m N-CHANNEL SILICON JFET DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4856 and 2N4856A are N-Channel silicon JFETs designed for analog switching and chopper applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: TA=25°C

J108

Abstract: MMBFJ108
Contextual Info: N-Channel Switch 3 • This device is designed for digital switching applications where very low on resistance is mandatory. • Sourced from Process 58. 2 1 TO-92 1. Drain 2. Source 3. Gate 1 SuperSOT-3 Marking: I8 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * TA=25°C unless otherwise noted

2N4858

Abstract: 2N4858A marking IGF N-channel JFET
Contextual Info: 2N4858 2N4858A w w w. c e n t r a l s e m i . c o m N-CHANNEL SILICON JFET DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4858 and 2N4858A are N-Channel silicon JFETs designed for analog switching and chopper applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: TA=25°C

Contextual Info: 2N4859 2N4859A w w w. c e n t r a l s e m i . c o m N-CHANNEL SILICON JFET DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4859 and 2N4859A are N-Channel silicon JFETs designed for analog switching and chopper applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: TA=25°C

JT MARKING

Abstract: SC321 SC321-2 marking VM
Contextual Info: SC321 1.0A I J H B ' i i i : Outline Drawings m a m # 4 * r- v FAST RECOVERY DIODE I/Ü 'm r < SI ¿ZEH 04 135* ! !2 m ! ! : Features 12-“ ! 135ta* s-t-o? ! \%z7n : Marking S urface m ount device » is « » * H igh voltage by m esa d esign. • S fk 8 &

st Diode marking EE

Contextual Info: ERC81-004 2.6A Ifl-JUN'Sc : Outline Drawings SCHOTTKY BARRIER DIODE Features I^Tjv : Marking L ow V F * 7 - 3 - K rta S u p e r h ig h sp ee d s w itc h in g . Color code : S ilver • T V — t - S iB l-iS B ftS tt H ig h reliability by p la n e r d e s ig n .

Contextual Info: E*3d RADI ALL 5 0 n TERMINATED OPTIONS: R 5 7 4 413900 TECHNICAL DATA SHEET 18GHz SMA S.P.9T. N/O Page 1/ 2 SWITCH INDICATOR R F CHARACTERISTICS | NUMBER OF WAYS FREQUENCY RANGE IMPEDANCE : 9 : 0- 18 GHz : 50 Ohms any modifications judged necessary Igf^al Microwave components

Contextual Info: 50n TERMINATED R 5 7 4 403945 TECHNICAL DATA SHEET 18GHz SMA S.P.9T. N/O Page 1/ 2 SWITCH OPTIONS:/SUPP.DIODES R F CHARACTERISTICS | NUMBER OF WAYS FREQUENCY RANGE IMPEDANCE : 9 : 0- 18 GHz : 50 Ohms any modifications judged necessary WS d RADI ALL Igf^al Microwave components

Contextual Info: ON Semiconductort JFET - General Purpose Transistor MMBF5460LT1 P–Channel 3 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Gate Voltage VDG 40 Vdc Reverse Gate–Source Voltage VGSR 40 Vdc IGF 10 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556 °C/W

scr 8a 200v

Contextual Info: fZ7 SG S -TH O M S O N ^7# raDeœnLisir^igffliKSi S08xxxH SCR FEATURES • I t rms = 8 A > V d r m = 200V to 800V ■ High surge current capability DESCRIPTION The S08xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose

Contextual Info: ON Semiconductort JFET - General Purpose Transistor MMBF5460LT1 P−Channel 3 MAXIMUM RATINGS Rating Drain−Gate Voltage Reverse Gate−Source Voltage Forward Gate Current Symbol Value Unit VDG 40 Vdc VGSR 40 Vdc IGF 10 mAdc 1 2 CASE 318 −08, STYLE 10 SOT−23 TO −236AB

Contextual Info: MMBF5460LT1 JFET − General Purpose Transistor P−Channel http://onsemi.com Features • Pb−Free Package is Available 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Gate Voltage VDG 40 Vdc Reverse Gate−Source Voltage VGSR 40 Vdc IGF 10 mAdc

transistor m6e

Abstract: m6e marking code MARKING JW SOT-23 MMBF5460LT1G jw sot23 marking jw MMBF5460LT1 JW SOT-23 jw sot23-3
Contextual Info: MMBF5460LT1 JFET − General Purpose Transistor P−Channel http://onsemi.com Features • Pb−Free Package is Available 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Gate Voltage VDG 40 Vdc Reverse Gate−Source Voltage VGSR 40 Vdc IGF 10 mAdc