MARKING J6 TRANSISTORS Search Results

Contextual Info: SOT-23 Plastic-Encapsulate Transistors S9014LT1 NPN TRANSISTOR FEATURES • High total power dissipation.(pc=0.2w) · Complementary to S9015LT1 MARKING: J6 MAXIMUM RATINGS* TA=25? unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage

S9014

Abstract: transistor SOT23 J6
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter

transistor SOT23 J6

Abstract: S9014 SOT-23 transistor S9014 S9014 S9014 sot-23 J6 s9014 equivalent marking J6 s9015 SOT23 transistor j6 sot23 S9014 J6
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

transistor S9014

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

Contextual Info: DMA56604 Silicon PNP epitaxial planar type Unit: mm For digital circuits • Features  Low collector-emitter saturation voltage VCE sat  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: J6  Basic Part Number

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TP9014NND03 TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES High hFE and good linearity Complementary to TP9015NND03

j6 transistor

Abstract: transistor j6 marking J6 transistors marking J6
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TP9014NND03 TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES High hFE and good linearity Complementary to TP9015NND03

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B S9014M 1.2x1.2×0.5 unit: mm TRANSISTOR TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES High hFE and good linearity Complementary to S9015M

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B S9014M 1.2x1.2×0.5 unit: mm TRANSISTOR TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES High hFE and good linearity Complementary to S9015M

S9015

Abstract: S9015M S9014M
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B S9014M 1.2x1.2×0.5 unit: mm TRANSISTOR TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES High hFE and good linearity Complementary to S9015M

sot23 marking y5

Abstract: BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Type Device Type Device marking Device marking BAL99 E2 BZX84-C43 X6 BAR99 E3 BZX84-C47 X7 BAS16 A3 FMMD914 5D BAV70 A4 FMMD6050 5A BAV74 JA BAV99 A7 BAW56 A1 HD2A 5D HD3A

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors S9014W TRANSISTOR NPN SOT–323 FEATURES  Complementary to S9015W  Small Surface Mount Package MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors S9014W TRANSISTOR NPN SOT–323 FEATURES  Complementary to S9015W  Small Surface Mount Package MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter

transistor SOT23 J6

Abstract: transistor SOT-23 marking code J6 011 B NPN SOT23 MMS9014 marking J6 transistors SOT-23 J6 transistor
Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMS9014 Features • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.2Watts Tamb=25 OC of Power Dissipation. Collector-current 0.1A

Contextual Info: Diodes IC Transistors Transistor T SMD Type Product specification KST9014 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Collector Current :IC=0.1A 1 0.55 Excellent hFE linearity +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1

transistor SOT23 J6

Abstract: transistor SOT-23 marking code J6 mms9014 marking J6 transistors sot-23 MARKING CODE 21 MMS9014 SOT-23 Transistor marking code K j6 sot23 marking code j6
Contextual Info: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMS9014 Features • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.2Watts Tamb=25 OC of Power Dissipation. Collector-current 0.1A Collector-base Voltage 50V

transistor SOT23 J6

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMS9014 Features • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.2Watts Tamb=25 OC of Power Dissipation. Collector-current 0.1A

MARKING E1 SOT23 TRANSISTOR

Abstract: S9014LT1 J6 S9014LT1
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 1. BASE S9014LT1 2. EMITTER TRANSISTOR（ NPN ） 3. COLLECTOR １．０ FEATURES Power dissipation PCM : 0.2 W（Tamb=25℃） Collector current ICM : 0.1 A

V3102

Contextual Info: R.F. TRANSISTORS AND DIODES TABLE 2: E-LINE H YPERA BRU PT V A R IA B LE C A P A C IT A N C E TUNER D IO D ES Hyperabrupt tuning diodes m ay be used in any electronic tuning syste m to replace conventional tuning diodes. Rem ote tuning control, autom atic frequency control and octave tuning in mobile, air­

transistor SOT23 J6

Abstract: marking J6
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMS9014 Features • • • • • • • NPN Silicon Plastic-Encapsulate Transistor SOT-23 Plastic-Encapsulate Transistors

transistor SOT23 J6

Abstract: MMS9014 micro transistor j6 sot23
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMS9014 Features • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.2Watts Tamb=25 OC of Power Dissipation.

transistor SOT23 J6

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMS9014 Features • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.2Watts Tamb=25 OC of Power Dissipation.

transistor SOT23 J6

Abstract: micro transistor
Contextual Info: MCC TM Micro Commercial Components MMS9014-L MMS9014-H
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features SOT-23 Plastic-Encapsulate Transistors Capable of 0.2Watts Tamb=25 OC of Power Dissipation.