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    MARKING JC SOT23-6 MOSFET Search Results

    MARKING JC SOT23-6 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MARKING JC SOT23-6 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking 702

    Abstract: MTN7002N3 n-channel mosfet SOT-23
    Text: CYStech Electronics Corp. Spec. No. : C325N3 Issued Date : 2002.12.18 Revised Date : 2007.12.12 Page No. : 1/5 N-CHANNEL MOSFET MTN7002N3 Description The MTN7002N3 is a N-channel enhancement-mode MOSFET. Symbol Outline MTN7002N3 SOT-23 D G S G：Gate S：Source


    Original     		PDF C325N3 MTN7002N3 MTN7002N3 OT-23 UL94V-0 marking 702 n-channel mosfet SOT-23

    Untitled

    Abstract: No abstract text available
    Text: TSM3401 30V P-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(m) Pin Definition: 1. Gate 2. Source 3. Drain -30 Features ID (A) 60 @ VGS = 10V -3.0 90 @ VGS = 4.5V -2.0 Block Diagram  Advance Trench Process Technology  High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM3401 OT-23 TSM3401CX

    mosfet 23 Tsop-6

    Abstract: IRLML2244TR power MOSFET reliability report TSOP-6 Marking IRLML2244 marking 43A sot23 MOSFET reliability report Cross Reference power MOSFET IRLMS6802TRPBF P-channel HEXFET Power MOSFET
    Text: International Rectifier Product Detail Page Page 1 of 2 Part Se Part: IRLMS6802TRPBF Description: -20V Single P-Channel HEXFET Power MOSFET in a TSOP-6 Micro 6 package Support Docs: Datasheet Spice File Saber File Reliability Report Cross Reference IR Part #


    Original     		PDF IRLMS6802TRPBF IRLTS2242TRPBF IRLML2244TRPBF OT-23 IRLMS6802TRPBF IRLMS6802TR mosfet 23 Tsop-6 IRLML2244TR power MOSFET reliability report TSOP-6 Marking IRLML2244 marking 43A sot23 MOSFET reliability report Cross Reference power MOSFET P-channel HEXFET Power MOSFET

    Untitled

    Abstract: No abstract text available
    Text: 2N7002E N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = +25°C • Low On-Resistance  Low Gate Threshold Voltage 60V 3Ω @ VGS = 10V 300mA  Low Input Capacitance  Fast Switching Speed Description


    Original     		PDF 2N7002E 300mA AEC-Q101 DS30376

    MTN7002N3

    Abstract: No abstract text available
    Text: CYStech Electronics Corp. Spec. No. : C325N3 Issued Date : 2002.12.18 Revised Date : 2005.01.07 Page No. : 1/4 N-CHANNEL MOSFET MTN7002N3 Description •The MTN7002N3 is a N-channel enhancement-mode MOSFET. •Pb-free package Symbol Outline MTN7002N3 SOT-23


    Original     		PDF C325N3 MTN7002N3 MTN7002N3 OT-23 UL94V-0

    Untitled

    Abstract: No abstract text available
    Text: DMN30H4D0L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = +25°C • Low Gate Threshold Voltage  Low Input Capacitance 4Ω @ VGS = 10V 0.25A  Fast Switching Speed 0.25A  Small Surface Mount Package  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)


    Original     		PDF DMN30H4D0L AEC-Q101 DS36313

    Untitled

    Abstract: No abstract text available
    Text: DMP1045U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on max ID TA = +25°C • Low On-Resistance  Low Input Capacitance 31mΩ@ VGS = -4.5V 5.2A  Fast Switching Speed 4.3A  Low Input/Output Leakage  ESD Protected Up To 3kV Description


    Original     		PDF DMP1045U AEC-Q101 DS35051

    Untitled

    Abstract: No abstract text available
    Text: DMN3051L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = +25°C • Low On-Resistance  Low Gate Threshold Voltage 38mΩ @ VGS = -10V 5.8A  Low Input Capacitance 4.5A  Fast Switching Speed V(BR)DSS 64mΩ @ VGS = -4.5V  Low Input/Output Leakage


    Original     		PDF DMN3051L AEC-Q101 DS31347

    Untitled

    Abstract: No abstract text available
    Text: DMP3130L P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(on) max -30V 77mΩ@ VGS = -10V 95mΩ@ VGS = -4.5V 150mΩ@ VGS = -2.5V •        ID TA = 25°C -3.5A -3.0A -2.4A Description and Applications   


    Original     		PDF DMP3130L AEC-Q101 DS31524

    P-CHANNEL -30V -4A

    Abstract: IRFTS9342TRPBF mosfet 23 Tsop-6 IRLML9301TR IRFTS9342 IRF5800TRPBF
    Text: PD - 96029A IRF5800PbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free A D D 1 6 D 2 5 D G 3 4 S Description VDSS = -30V RDS on = 0.085Ω Top View


    Original     		PDF 6029A IRF5800PbF OT-23. IRF5800TRPBF IRF5800TR 12-Jul-2012 P-CHANNEL -30V -4A IRFTS9342TRPBF mosfet 23 Tsop-6 IRLML9301TR IRFTS9342 IRF5800TRPBF

    Untitled

    Abstract: No abstract text available
    Text: FS8853-DS-26_EN OCT 2010 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 2.6 Datasheet FS8853 300 mA LDO Linear Regulator FS8853 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司


    Original     		PDF FS8853-DS-26 FS8853

    dc dc step down sot23-5

    Abstract: marking B3 sot23-5 CM3018 CM3018-15ST CM3018-18ST CM3018-25ST CM3018-28ST CM3018-29ST CM3018-30ST CM3018-31ST
    Text: CM3018 Micropower, 150mA Low Noise CMOS Regulator with Fast Response Features Product Description • The CM3018 is a very low dropout, low noise regulator that delivers up to 150mA of load current at a fixed output voltage. Available with 1.5V, 1.8V, 2.5V, 2.6V, 2.8V, 2.85V,


    Original     		PDF CM3018 150mA CM3018 150mV 150mA) 178mm dc dc step down sot23-5 marking B3 sot23-5 CM3018-15ST CM3018-18ST CM3018-25ST CM3018-28ST CM3018-29ST CM3018-30ST CM3018-31ST

    FS8853-33PL

    Abstract: FS8853 Transistor PNP 40V 0.6A SOT-23 333C exfs8853 FS8853-xxxL p-channel mosfet sot-89 p-channel mosfet sot89 5V FORTUNE SEMICONDUCTOR
    Text: FS8853 300 mA LDO Linear Regulator General Description Ordering Information FS8853-xx x x The FS8853 is a low-dropout linear regulator that operations in the input voltage range from +2.5V to +9.0V and delivers 300mA output current. Package The high-accuracy output voltage is preset at an


    Original     		PDF FS8853 FS8853-xx FS8853 300mA 100mV FS8853-29Cx OT-23 OT-89 FS8853-33PL Transistor PNP 40V 0.6A SOT-23 333C exfs8853 FS8853-xxxL p-channel mosfet sot-89 p-channel mosfet sot89 5V FORTUNE SEMICONDUCTOR

    Untitled

    Abstract: No abstract text available
    Text: REV. 2.1 FS8853-DS-21_EN Datasheet FS8853 300 mA LDO Linear Regulator SEP 2006 FS8853 Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel.：886-2-28094742 Fax：886-2-28094874


    Original     		PDF FS8853-DS-21 FS8853 FS8853 OT-23 OT-89

    FS8853

    Abstract: XXXW
    Text: FS8853 300mA LDO Linear Regulator General Description Ordering Information FS8853-xx x x The FS8853 is a low-dropout linear regulator that operations in the input voltage range from +2.5V to +9.0V and delivers 300mA output current. Package The high-accuracy output voltage is preset at an


    Original     		PDF FS8853 300mA FS8853-xx FS8853 100mV FS8853-29Cx OT-23 XXXW

    Untitled

    Abstract: No abstract text available
    Text: FS8854 350mA LDO Linear Regulator General Description Ordering Information The FS8854 is a low-dropout linear regulator that operations in the input voltage range from +2.5V to +6.5V and delivers 350mA output current. FS8854-xx x x Package A : SOT-23 B : SOT-23


    Original     		PDF FS8854 350mA FS8854 FS8854-xx OT-23 OT-89

    LINEAR REGULATOR sot-89

    Abstract: FS8853 FS8853-33PL LDO MARKING
    Text: FS8853 300mA LDO Linear Regulator General Description Ordering Information FS8853-xx x x The FS8853 is a low-dropout linear regulator that operations in the input voltage range from +2.5V to +9.0V and delivers 300mA output current. Package The high-accuracy output voltage is preset at an


    Original     		PDF FS8853 300mA FS8853-xx FS8853 100mV FS8853-29Cx OT-23 LINEAR REGULATOR sot-89 FS8853-33PL LDO MARKING

    Untitled

    Abstract: No abstract text available
    Text: FS8853-DS-24_EN Datasheet MAY 2010 Pr RT Re op UN fe ert E’ re ie nc s e O nl y REV. 2.4 FS8853 Fo r FO 300 mA LDO Linear Regulator FS8853 Fo r FO Pr RT Re op UN fe ert E’ re ie nc s e O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司


    Original     		PDF FS8853-DS-24 FS8853 FS8853 OT-23 OT-89

    Untitled

    Abstract: No abstract text available
    Text: FS8853-DS-23_EN Datasheet DEC 2009 F P r R ro SC ef pe ’ er rti en es ce O nl y REV. 2.3 FS8853 Fo 300 mA LDO Linear Regulator FS8853 Fo F P r R ro SC ef pe ’ er rti en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd.,


    Original     		PDF FS8853-DS-23 FS8853 FS8853 OT-23 OT-89

    hf5710-01-b-a12 pinout

    Abstract: BA12 BB12 CM3102 CM3102-12SO CM3102-12ST MIC5258 MO-178
    Text: CM3102 Micropower 1.2V/150mA CMOS LDO Regulator with Power Good Features Product Description • • • • • • • • • • • The CM3102 is a low quiescent current 90uA regulator that delivers up to 150mA of load current at a fixed 1.2V output. In addition, the CM3102 features a Power


    Original     		PDF CM3102 V/150mA CM3102 150mA OT23-5 MIC5258" OT23-5. hf5710-01-b-a12 pinout BA12 BB12 CM3102-12SO CM3102-12ST MIC5258 MO-178

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. LND250 N-Channel Depletion-Mode MOSFET Ordering Information If Order Number / Package Product marking for SOT-23: min TO-236AB* NDE* 1.0K& 1.0mA LND250K1 BV dsx / b v dgx 500V Idss where = 2-week alpha date code *S am e as SO T-23. All units shipped on 3,000 piece ca rrie r tape reels.


    OCR Scan     		PDF LND250 OT-23: O-236AB* LND250K1

    marking A07

    Abstract: TSM2323
    Text: TAIWAN E SEMICONDUCTOR TSM2323 20V P-Channei MOSFET pb RoHS C O M P L IA N C E PRODUCT SUMMARY SOT-23 V DS (V) P in D e fin itio n : 1. Gate 1 2. Source 3. Drain 2 -20 RDS(on>(mO) Id (A) 39 @ Vgs - -4.5V -4.7 52 @ Vqs = -2.5V -4.1 63 @ VCS = -1.8V -2.0 Features


    OCR Scan     		PDF TSM2323 OT-23 TSM2323CX OT-23 marking A07 TSM2323

    mosfet marking code AL sot-23

    Abstract: p-channel sot-23 .5A TSM3401CX 41YML ABV MARKING
    Text: TAIWAN S SEMICONDUCTOR pb RoHS TSM3401 30V P-Channei MOSFET CO M PLIAN C E SOT-23 PRODUCT SUMMARY Pin Definition: 1. G a te -30 Features Advance Trench Proce s s Tech no logy • High Density Cell Design for Ultra Low On-resistance • PA Switch 60 @ VGS = 10V


    OCR Scan     		PDF M3401 OT-23 TSM3401CX OT-23 mosfet marking code AL sot-23 p-channel sot-23 .5A 41YML ABV MARKING

    Untitled

    Abstract: No abstract text available
    Text: S E M IC O N D U C TO R PRELIMINARY tm FDN5630 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically • 1.7 A, 60 V. to improve the overall efficiency of DC/DC converters using Rds on = 0.100 £1 @ V GS = 10 V


    OCR Scan     		PDF FDN5630 effi91