MARKING JJ9 Search Results

JMS27656

Abstract: ZD - 98F FFD socapex MIL-PRF-87937 amphenol 900047 DOC-000503-ANG JMS27468 900142 ZD 98F DOC-000030-ANG
Contextual Info: Amphenol LJT / HE 308 MIL-DTL-38999 Series I Subminiature cylindrical connectors www.amphenol-socapex.com - www.38999-solutions.com Amphenol <<< LJT / HE 308 Description Amphenol Socapex is a MIL-DTL-38999 series I standard QPL and HE308 qualified manufacturer. The LJT product

Contextual Info: SSM3J306T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type Preliminary SSM3J306T High-Speed Switching Applications Unit: mm • 4 V drive • Low ON-resistance: Ron = 225 mΩ max (@VGS = −4 V) Ron = 117 mΩ (max) (@VGS = −10 V) Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: v PRELIMINARY CALIFO RN IA MICRO DEVICES PAC DN005 ►► ► ► ► P/ACTIVE SCHOTTKY DIODE HIGH SPEED BUS TERMINATOR Fe atu res A p p lica tio n s • • • • • 36 integrated diodes in a single package offers 18 channel, dual rail clam ping action

SSM3J306T

Abstract: MARKING JJ9
Contextual Info: SSM3J306T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J306T Power management switch Applications Unit: mm • 4 V drive • Low ON-resistance: Ron = 225 mΩ max (@VGS = −4 V) Ron = 117 mΩ (max) (@VGS = −10 V) Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: SSM3J117TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J117TU High-Speed Switching Applications Unit: mm Low ON-resistance: 2.1±0.1 Ron = 117 mΩ max (@VGS = −10 V) 1.7±0.1 Lead(Pb)-free 2.0±0.1 • Ron = 225 mΩ (max) (@VGS = −4 V)

Contextual Info: Panasonic x V 9 V 9 J l/H W B S u V x V t t Tantalum Solid Electrolytic Capacitors/EF Resin Dipped Type Tantalum Solid Electrolytic Capacitors V ^ J I/S K M IK Japan EF Type F Resin Dipped Type Series: ft IECQ Certificated Features 'If ® It K ill •

SSM3J306T

Abstract: MARKING JJ9
Contextual Info: SSM3J306T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J306T Power management switch Applications • • 4 V drive Low ON-resistance: Unit: mm Ron = 225 mΩ max (@VGS = −4 V) Ron = 117 mΩ (max) (@VGS = −10 V) Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: SSM3J306T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J306T Power management switch Applications Unit: mm • 4 V drive • Low ON-resistance: Ron = 225 mΩ max (@VGS = −4 V) Ron = 117 mΩ (max) (@VGS = −10 V) Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: SSM3J117TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J117TU High-Speed Switching Applications Unit: mm • 4 V drive • Low ON-resistance: 2.1±0.1 Ron = 225 mΩ max (@VGS = −4 V) 1.7±0.1 Characteristic Symbol Rating Unit Drain–source voltage

SSM3J117TU

Contextual Info: SSM3J117TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J117TU High-Speed Switching Applications 4 V drive • Low ON-resistance: Unit: mm Ron = 225 mΩ max (@VGS = −4 V) 2.1±0.1 Ron = 117 mΩ (max) (@VGS = −10 V) 1.7±0.1 Rating

Contextual Info: SSM3J306T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J306T Power management switch Applications • • 4 V drive Low ON-resistance: Unit: mm Ron = 225 m max (@VGS = −4 V) Ron = 117 m (max) (@VGS = −10 V) Absolute Maximum Ratings (Ta = 25°C)

SSM3J306T

Abstract: MARKING JJ9
Contextual Info: SSM3J306T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J306T Power management switch Applications • • 4 V drive Low ON-resistance: Unit: mm Ron = 225 mΩ max (@VGS = −4 V) Ron = 117 mΩ (max) (@VGS = −10 V) Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: SSM3J117TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J117TU High-Speed Switching Applications 4 V drive • Low ON-resistance: Ron = 225 m max (@VGS = −4 V) Ron = 117 m (max) (@VGS = −10 V) Unit: mm 2.1±0.1 1.7±0.1 Unit Drain–source voltage

SSM3J117TU

Contextual Info: SSM3J117TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J117TU High-Speed Switching Applications 4 V drive • Low ON-resistance: Unit: mm Ron = 225 mΩ max (@VGS = −4 V) 2.1±0.1 Ron = 117 mΩ (max) (@VGS = −10 V) 1.7±0.1 Rating

Contextual Info: GM m 3 r z iD c n EE M l SCC2698B Enhanced octal universal asynchronous receiver/transmitter Octal UART Product specification Supersedes data of 1995 May 01 IC19 Data Handbook Philips Semiconductors 1998 Sep 04 1 PHILIPS Philips Semiconductors Product specification

scl4000

Contextual Info: 1 800 253-7007 R&E INTERNATIONAL. INC SCL4021B LOGIC D IA G R AM EIGHT S T A G E S T A T IC S H IFT R E S IS T B t SER V o 0 Pl-7 Pl-6 PI-6 IN 07 J_I_ l- 1-1-L 16 IS 1 P I-8 H 3 2 1 I Q6 08 13 1Z 4 5 I 11 6 I P I-4 P I-3 CL P/S 10 9 7 1 I P I-2

jrm a55

Abstract: tip 0ff 0401 ANALOG irf 5630 ko 224 4K tantalum capacitors jrm a45 irf 7408 bt 4840 pinout diagram A9F7 29 INCH crt tv FBT pinout chassis 3111 253 3266 2e jrm A45
Contextual Info: PR E FA C E T he IBM P erson al C o m p u te r T ech n ical R eferen ce M anual is designed to pro v id e h ard w are design an d in terfa ce in fo rm atio n . T h is p u b licatio n also provides B asic In p u t O u tp u t S y stem B IO S in fo rm atio n as w ell as p ro g ram m ing su p p o rt m a tter.

JR 608H

Abstract: BEE 7CA atm8 deb hex nv AG75
Contextual Info: DATASHEET PM PMC-960835 ISSUE 4 PRELIMINARY PMC-Sierra, Inc. PM7346 s / u n i - q j e t SA TURN QUAD USER NETWORK INTERFA CE FOR J2, E3, T3 PM7346 S/UNI“ QJET S/UNI-QJET SATURN QUAD USER NETWORK INTERFACE FOR J2/E3/T3 DATA SHEET PRELIMINARY ISSUE 4: JANUARY 1998

bcm 4330

Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Contextual Info: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?