MARKING JTW Search Results

JTW "sot143"

Abstract: MARKING CODE jtw marking jtw sot marking CODE JTW diode a61 "sot143" MARKING CODE R7 DIODE BAS28 marking jtw
Contextual Info: BAS28 SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS28 consists of two electrically isolated ultra-high speed silicon switching diodes manufactured by the epitaxial planar

Contextual Info: BAS28 SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS28 consists of two electrically isolated ultra-high speed silicon switching diodes manufactured by the epitaxial planar

Contextual Info: C O N WIRE AND HARNESS ID PRODUCTS T E N T S 3 Heat Shrink/Cable Markers Performance Labels Self-Laminating Labels Pre-Printed Wire and Cable Markers LABEL ID PRODUCTS 86 Product Code Cross Reference Thermal Transfer Labels Dot Matrix Labels Laser Labels HARDWARE/SOFTWARE

EN50343

Abstract: AS81531 SAE-AMS-DTL-23053/5 BMS-13-47 MIL-M-87958 DOT MATRIX PRINTER SERVICE MANUAL UL224-VW-1 SAE-AMS-DTL-23053/6 afnor nf 16-101 UL224
Contextual Info: C O N WIRE AND HARNESS ID PRODUCTS T E N T S 3 Heat Shrink/Cable Markers Performance Labels Self-Laminating Labels Pre-Printed Wire and Cable Markers LABEL ID PRODUCTS 86 Product Code Cross Reference Thermal Transfer Labels Dot Matrix Labels Laser Labels HARDWARE/SOFTWARE

SMD MARKING CODE transistor j3

Contextual Info: SIEMENS 5-V Low -D rop Fixed V oltage R egu lato r TLE 4268 Features Output voltage tolerance < ± 2 % Very low current consumption Low-drop voltage Watchdog Settable reset threshold Overtemperature protection Reverse polarity protection Short-circuit proof

2N1025

Abstract: 2N1026 2N1469 CU10A 2N1026 JAN 2N146 vqb 71
Contextual Info: MIL -S - 195GG/78C 17 Mirth 1971 SUPERSEDING «»»» o «A iA A /nen J V liiJ-O “ ¿»O U U / IO D 10 February 1902 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES 2N1025, 2N1028 AND 2N1469 This specification Is mandatory for use by all Departments and Agencies of the Department of Defense.

MIL-M-87958

Abstract: X0640 BMS-13-47 lms9000 T612M-DS MV203 snap on tools for electronic BMS13-47 RT-1805 CR-107
Contextual Info: C O N T E N T S WIRE AND HARNESS ID P R O D U C T S 2 Heat Shrink/Cable Markers Performance Labels Self-Laminating Labels Pre-Printed Wire & Cable Markers LABEL ID PRODUCTS 64 Product Code Cross Reference Thermal Transfer Labels Dot Matrix Labels Laser Labels

SB100143WE5

Abstract: CR-107-LSR SB050143WE10 rhd 5940 SB200743WE1
Contextual Info: Wire and Harness ID Products Self-Laminating Labels SB Thermal transfer printable self-laminating labels Tyco Electronics SB is a thermal transfer printable, translucent vinyl film with a permanent acrylic adhesive, supplied with a white printable area, which is over-laminated upon application with the

Contextual Info: P re lim in a ry K M 6 8 F S 2 0 0 0 Z , K M 6 8 F R 2 0 0 0 Z Fami l y C M O S SR A M D o c u m e n t Title 2 56 Kx 8 SUper Low Powe r and Low Voltage Full C M O S SRAM Data Sheets for 48-CSP R evision H isto ry RevNo. H Istorv D r a f t D a ta R em a r k

Contextual Info: P re lim in a ry K M 6 8 F S 1 OOOZ, K M 6 8 F R 1 0 0 0 Z F a m i l y CMOS SRAM Documerat Title 12 8K x8 Super Low Powe r and Low Voltage Full C M O S SRAM Data Sheets for 48-CSP Revision History R e v . N o. H Istorv Draft Data R em ark Rev. 0.0 -1 's t edition

82S16/BEA

Abstract: 82S16
Contextual Info: DESC FO R M 193 M A Y 86 This Material C o p y r i g h t e d B y Its R e s p e c t i v e M a n u f a c t u r e r 1. SCOPE 1.1 Scope. This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 o f M l U - S T D - 8 8 3 , "Provisions for the us e of MIL-STD-883 in conjunction with compliant non-JAN

Contextual Info: REVISIONS LTR APPROVED DESCnPTWN REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET 10 11 14 12 13 15 16 17 18 19 PMCN/A STANDARDIZED MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 MICROCIRCUITS, MEMORY, DIGITAL, CMOS 2K X 8 EEPROM, MONOLITHIC SILICON

9519A

Abstract: D-10 MIL-CON
Contextual Info: DËSC FORM 193 This Material Copyrighted By Its Respective Manufacturer 1. SCOPE 1.1 Scope. This drawing describes device requirements fo r class B m ic ro c irc u its in accordance w ith 1 .2 .1 o f MIL-STD-883, "Provisions fo r the use o f MIL-STD-883 in conjunction w ith compliant non-JAN

e1240

Abstract: ALL1
Contextual Info: REVISIONS LTR APPROVED DATE YR-MO-DA DESCRIPTION 1989 APR 21 Add the W package to the drawing. Changes on pages 1, 2, 6, 9, 10, 11, 12, and 13. Editorial changes throughout. REV SHEET REV SHEET REV STATUS OF SHEETS REV 10 SHEET 11 13 PMIC N/A DEFENSE ELECTRONICS SUPPLY CENTER

E1115A

Abstract: qml-38535 MIL-STD-481 Instructions IOP0-IQP15 CMP1A-3 93051 I0P10 CMGA15-P68
Contextual Info: REVISIONS DESCRIPTION LTR APPROVED DA T E YR-MO-DA REV SHEET REV SHEET REV SHEET 15 16 17 REV STATIJS OF SHEETS 18 19 20 STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE 22 23 24

MOS marking JC

Abstract: V62C256 32-LCC
Contextual Info: r-. e .! ^ VITELIC V r~ j * f V62C256 FAMILY HIGH PERFORMANCE LOW POWER 32K x 8 BIT CMOS STATIC RAM F eatu res D e s c rip tio n • High speed • Maxim um access tim e of 100 ns to 150 ns • Equal access and cycle times The V62C256 is a high speed, low power, 3 2 ,768word by 8-bit CMOS static RAM fabricated using

LT190

Abstract: LT1190 LT1190C LT1190CJ8 LT1190CN8 LT1190CS8 LT1190M LT1190MJ8 MV-11T LT1190 equivalent
Contextual Info: uim TECHNOLOGY 111190 Ultra High S p e e d O p e ra tio n a l A m p lifie r DCSCRIPTIOn F€flTUR€S • Gain Bandwidth Product, Ay = +1 ■ Slew Rate ■ Low Cost ■ Output Current ■ Settling Time ■ Differential Gain Error ■ Differential Phase Error

RF MARKING CODE S4

Abstract: MARKING CODE jtw
Contextual Info: MILITARY / CECC PRODUCTS SGS-THOMSON is a leading supplier of high-reliability integrated circuits devoted to those applica­ tions military, medical, telecom, nuclear instruments, aerospace etc. where reliability must be guaran­ teed or certified for each and every lot. The philos­

Contextual Info: rr\rm _ TECHNOLOGY F6OTURCS LT1208/LT1209 Dual and Q uad 45MHz, 400V/|is O p Am ps D CSCRIPTIOn • 45MHz Gain-Bandwidth ■ 400V/ns Slew Rate ■ Unity-Gain Stable ■ 7V/mV DC Gain, RL = 500Q ■ 3mV Maximum Input Offset Voltage ■ +12V Minimum Output Swing into 500i2

V61C32

Contextual Info: -3¿ ¿ S a V ITELIC & & V61C3S FAMILY HIGH PERFORMANCE LOW POWER 2 K x 8 DUAL PORT MEMORY F eatu re s D e sc rip tio n • 2K x 8 bit C M O S Static RAM with 3-state outputs The Vitelic V61C35 is a CMOS 2K x 8 low-cost dual port SRAM that eliminates on-chip arbitration to fit

HY5117404a

Abstract: KRAH
Contextual Info: “H Y U N D A I ^Y5117404A, HY5116404A 4M x 4-bit CMOS DRAM with Extended Data Out DESCRIPTION ORDERING INFORMATION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended Data Out mode

sria 0

Contextual Info: REVISIONS LTR DATE YR-MO-OA DESCRIPTION APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET 10 11 12 13 14 15 PMIC N/A DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS

LT1012A

Contextual Info: _LT1012A/LT1012 Picoamp Input Current Microvolt Offset Low Noise Op Amp F€ATUft€S DCSCMPTIOft • OP-07 Type Performance at 1/8th of OP-07’s Supply Current at 1/20th of OP-07’s Bias and Offset Currents ■ Guaranteed Offset Voltage 25/*V Max

Contextual Info: I % REVISIONS DffTE VIMKMM DESCMPDON LTR APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV 10 11 SHEET PMC N/A T tfJU STANDARDIZED MILITARY DRAWING CHECKED BY Tfcy.'W I 12 13 18 19 MICROCIRCUITS, MEMORY, DIGITAL, CMOS 2K X 8 EEPROM, MONOLITHIC SILICON