BAV199
Abstract: No abstract text available
Text: BAV199. Silicon Low Leakage Diode • Low-leakage applications • Medium speed switching times • Series pair configuration BAV199 ! , , Type BAV199 Package SOT23 Configuration series Marking JYs Maximum Ratings at TA = 25°C, unless otherwise specified
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BAV199.
BAV199
BAV199,
BAV199
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BAV199
Abstract: BAV199F BAV 199 SOT23
Text: BAV199. Silicon Low Leakage Diode • Low-leakage applications • Medium speed switching times • Series pair configuration BAV199 BAV199F 3 D 1 D 2 1 2 Type BAV199 BAV199F* Package SOT23 TSFP-3 Configuration series series Marking JYs JYs * Preliminary
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BAV199.
BAV199
BAV199F
BAV199F*
BAV199,
BAV199F,
EHB00086
Mar-10-2004
BAV199
BAV199F
BAV 199 SOT23
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BAV199
Abstract: JYs sot23
Text: BAV199. Silicon Low Leakage Diode • Low-leakage applications • Medium speed switching times • Series pair configuration BAV199 BAV199F 3 D 1 D 2 1 2 Type BAV199 BAV199F* Package SOT23 TSFP-3 Configuration series series Marking JYs JYs * Preliminary
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BAV199.
BAV199
BAV199F
BAV199F*
BAV199,
BAV199F,
Mar-10-2004
JYs sot23
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code marking JYs sot-23
Abstract: BCR847BF
Text: BAV199. Silicon Low Leakage Diode • Low-leakage applications • Medium speed switching times • Series pair configuration BAV199 BAV199F 3 D 1 D 2 1 2 Type BAV199 BAV199F* Package SOT23 TSFP-3 Configuration series series Marking JYs JYs * Preliminary
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PDF
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BAV199.
BAV199
BAV199F
BAV199F*
BAV199,
BAV199F,
Mar-10-2004
code marking JYs sot-23
BCR847BF
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BAV 199 SOT23
Abstract: marking jys BAV199 JYs sot23
Text: BAV199. Silicon Low Leakage Diode Low-leakage applications Medium speed switching times Series pair configuration BAV199 3 D 1 D 2 1 2 Type BAV199 Package SOT23 Configuration series Marking JYs Maximum Ratings at TA = 25°C, unless otherwise specified
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BAV199.
BAV199
EHB00086
EHB00087
Feb-03-2003
BAV 199 SOT23
marking jys
BAV199
JYs sot23
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code marking JYs sot-23
Abstract: Q62702-A921 JYs transistor low-leakage silicon diode DIODE BAV JS v JYS SOT-23
Text: Silicon Low Leakage Diode Array BAV 199 Low-leakage applications ● Medium speed switching times ● Connected in series ● Type Marking Ordering Code tape and reel BAV 199 JYs Q62702-A921 Pin Configuration Package1) SOT-23 Maximum Ratings per Diode Parameter
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Q62702-A921
OT-23
code marking JYs sot-23
Q62702-A921
JYs transistor
low-leakage silicon diode
DIODE BAV JS v
JYS SOT-23
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JYs sot23
Abstract: JYs marking transistor marking jys BAV199 BAV 199 SOT23 BAV199F jys diode
Text: BAV199. Silicon Low Leakage Diode • Low-leakage applications • Medium speed switching times • Series pair configuration BAV199 BAV199F ! , , Type BAV199 BAV199F* Package SOT23 TSFP-3 Configuration series series Marking JYs JYs * Preliminary Maximum Ratings at TA = 25°C, unless otherwise specified
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BAV199.
BAV199
BAV199F
BAV199F*
BAV199,
BAV199F,
Aug-27-mA
EHB00086
EHB00087
JYs sot23
JYs marking transistor
marking jys
BAV199
BAV 199 SOT23
BAV199F
jys diode
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code marking JYs sot-23
Abstract: marking jys Q62702-A921 JYs marking transistor BAV199
Text: Silicon Low Leakage Diode Array BAV 199 Low-leakage applications ● Medium speed switching times ● Connected in series ● 2 3 1 Type Marking Ordering Code tape and reel BAV 199 JYs Q62702-A921 Pin Configuration Package1) SOT-23 Maximum Ratings per Diode
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Q62702-A921
OT-23
code marking JYs sot-23
marking jys
Q62702-A921
JYs marking transistor
BAV199
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BAV199
Abstract: marking jys jys diode
Text: BAV199 3 Silicon Low Leakage Diode Array Low-leakage applications Medium speed switching times 2 Connected in series 1 VPS05161 3 1 2 EHA07005 Type BAV199 Marking JYs Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SOT23 Maximum Ratings Parameter Symbol
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BAV199
VPS05161
EHA07005
EHB00086
Aug-20-2001
EHB00087
BAV199
marking jys
jys diode
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BAV 199 SOT23
Abstract: BAV199 P 101 Series
Text: BAV 199 Silicon Low Leakage Diode Array 3 • Low-leakage applications • Medium speed switching times • Connected in series 2 1 VPS05161 3 1 2 EHA07005 Type Marking BAV 199 JYs Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SOT-23 Maximum Ratings Parameter
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VPS05161
EHA07005
OT-23
EHB00086
EHB00087
Oct-12-1999
EHB00088
BAV 199 SOT23
BAV199
P 101 Series
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marking jys
Abstract: BAV199 JYs marking transistor BAV 199 SOT23 JYs sot23 BCW66
Text: BAV199. Silicon Low Leakage Diode • Low-leakage applications • Medium speed switching times • Series pair configuration • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAV199 ! , , Type Package Configuration Marking BAV199
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BAV199.
BAV199
marking jys
BAV199
JYs marking transistor
BAV 199 SOT23
JYs sot23
BCW66
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FZH 171
Abstract: FZH 265 fzh 111 FZJ 131 FZH 121 fzh 145 FZH 131 FZJ 121 FZH 105 A FZH 205
Text: 1.5SMC SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR PEAK PULSE POWER 1500 Watts BREAK DOWN VOLTAGE 6.8 to 250 Volts FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Glass passivated chip junction in SMC/DO-214AB package
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SMC/DO-214AB
2002/95/EC
FZH 171
FZH 265
fzh 111
FZJ 131
FZH 121
fzh 145
FZH 131
FZJ 121
FZH 105 A
FZH 205
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FZH 145
Abstract: FZH 131 fzh 111 FZH 105 A 1.5SMC30CA panjit FZJ 131 FZH 205 FZH 265 fzh 105 t-d 94v 0
Text: 1.5SMC SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR PEAK PULSE POWER 1500 Watts BREAK DOWN VOLTAGE 6.8 to 250 Volts FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Glass passivated chip junction in SMC/DO-214AB package
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SMC/DO-214AB
2002/95/EC
FZH 145
FZH 131
fzh 111
FZH 105 A
1.5SMC30CA panjit
FZJ 131
FZH 205
FZH 265
fzh 105
t-d 94v 0
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fzh 111
Abstract: FZH 145 FZH 205 fzl 131 marking jyw FZH 171 FZH 165 b FZH 265 b FZH 121 FZH 105 A
Text: 1.5SMC SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR PEAK PULSE POWER 1500 Watts BREAK DOWN VOLTAGE 6.8 to 250 Volts FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Glass passivated chip junction in SMC/DO-214AB package
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PDF
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SMC/DO-214AB
2002/95/EC
fzh 111
FZH 145
FZH 205
fzl 131
marking jyw
FZH 171
FZH 165 b
FZH 265 b
FZH 121
FZH 105 A
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FZH 111
Abstract: fzh 171 fx-m 94v FZH 131 marking code jyw fzl 131 FXP MARKING fzh 105 fzh 121
Text: 1.5SMC-AU SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR PEAK PULSE POWER 1500 Watts BREAK DOWN VOLTAGE 6.8 to 250 Volts FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O 0.128 3.25 0.108(2.75) • 1500W surge capability at 1.0ms
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SMC/DO-214AB
2002/95/EC
TS16949
AECQ101
00particular
FZH 111
fzh 171
fx-m 94v
FZH 131
marking code jyw
fzl 131
FXP MARKING
fzh 105
fzh 121
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FZH 265
Abstract: 1.5SMC27CA-AU FZH 265 b 805/FZH 265
Text: 1.5SMC-AU SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR PEAK PULSE POWER 1500 Watts BREAK DOWN VOLTAGE 6.8 to 250 Volts FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Excellent clamping capability
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SMC/DO-214AB
TS16949
2012-REV
FZH 265
1.5SMC27CA-AU
FZH 265 b
805/FZH 265
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fzh 171
Abstract: FZH 131 fx-m 94v FZH 111 1.5SMC39A FXP FXP 1.5SMC39A jyn 616 fzl 131 FZH 165 b marking FZB
Text: 1.5SMC SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR PEAK PULSE POWER 1500 Watts BREAK DOWN VOLTAGE 6.8 to 250 Volts FEATURES 0.128 3.25 • 1500W surge capability at 1.0ms • Excellent clamping capability 0.108(2.75) • Glass passivated chip junction in SMC/DO-214AB package
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2002/95/EC
2012-REV
fzh 171
FZH 131
fx-m 94v
FZH 111
1.5SMC39A FXP
FXP 1.5SMC39A
jyn 616
fzl 131
FZH 165 b
marking FZB
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FZH 111
Abstract: FZH 131 fx-m 94v FXP MARKING fzh 171 fzh 231 fzh 105 1.5SMC75CA-AU FZH 165 b FZJ 131
Text: 1.5SMC-AU SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR PEAK PULSE POWER 1500 Watts BREAK DOWN VOLTAGE 6.8 to 250 Volts FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Excellent clamping capability
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Original
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PDF
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SMC/DO-214AB
TS16949
AECQ101
2002/95/EC
2012-REV
FZH 111
FZH 131
fx-m 94v
FXP MARKING
fzh 171
fzh 231
fzh 105
1.5SMC75CA-AU
FZH 165 b
FZJ 131
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Untitled
Abstract: No abstract text available
Text: 1.5SMC-AU SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR PEAK PULSE POWER 1500 Watts BREAK DOWN VOLTAGE 6.8 to 250 Volts FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Excellent clamping capability
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Original
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SMC/DO-214AB
TS16949
2013-REV
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TRANSISTOR 131-6 BJ 946
Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise
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OCR Scan
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PDF
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B3-B3715
B3715-X-X-7600
TRANSISTOR 131-6 BJ 946
transistor bc 564
transistor Bc 949 datenblatt
TRANSISTOR BC 545
MARKING CODE AGS bsp 2000
siemens datenbuch
bft99
mmic SMD amplifier marking code 19s
TRANSISTOR SMD MARKING CODE bc ru
DIODE smd marking 22-16
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code marking JYs sot-23
Abstract: No abstract text available
Text: 3SE D • Ö23b320 OOlbSM? 3 M S I P Silicon Low Leakage Diode Array SIEMENS/ S P C L i BAV199 SEMICONDS _ 'T - p f - P I • Low Leakage applications • Medium speed switching times • Connected in series Type Marking Ordering code 8-mm tape Package
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OCR Scan
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23b320
BAV199
Q62702-A921
T-01-09
code marking JYs sot-23
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Untitled
Abstract: No abstract text available
Text: :jyserfv'. I la driNwad on t bn dMetaaad, naraduM d M ia to m m nmar ttaa * toonno right la g w iriid to dW oao 4 3 2 _ 1_ REVISIONS SVM DATE D E S C R IP T IO N ECN 1 08/04/08 Release drawing APPROVED ip D -S U B TECHNICAL DATA SHELL : BODY : CONTACTS :
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PDF
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100ua)
L77TWC21WA4SEP3SV4RRMB
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Untitled
Abstract: No abstract text available
Text: :jyserfv'. 3 4 i ta driNorod on » bo dtaetaaad, raaraduead or uao in •ola tar o m m omar tbon Amhonal * tbot no right ta pontad to dtaotaoo 4 TOLERANCE +/-0.03 Customer drawing 4 3 _1_ 2 REVISIONS SVM DESCRIPDON ECN DATE APPROVED 06/ 15/09 1
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PDF
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76/15/OS
L77TWB17W2SP3SY
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W1P 59 transistor
Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors
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197/197X
S310N
W1P 59 transistor
W1p 48 TRANSISTOR
transistor w1P 83
ICM AP 1703
transistor SMD marked RNW
transistor BD139 PH 71
W1P 66 transistor
transistor w1P 91
Pnp transistor smd ba rn
w1p npn
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