MARKING K GAAS FET Search Results

gaas fet marking B

Abstract: gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K"
Contextual Info: Marking manner of MITSUBISHI GaAs FET QL-1104E-A July/2008 [Leadless ceramic package] GD-26, 27 Terminal position (from Top View) Top View ① ② B 0 1AL B 0 1AL Electrodes direction: ① Gate ② Source ③ Drain ② ③ ① ② ③ Drain Gate Source

XMFP1-M3

Abstract: D 8243 HC E176 e170315 OF FET E176 FET E119 E176 field effect transistor E176 fet mc34063 step down external transistor 28428
Contextual Info: GaAs GaAs FIELD EFFECT TRANSISTOR GaAs FIELD EFFECT TRANSISTOR Murata Manufacturing Co., Ltd. Cat. No. O35E Contents Small Signal FETs XMFS Series ••••••••••••••••••••••••••••••••••••••••••••••••••••••

gaas fet marking AR

Contextual Info: Infineon tei hnoiosi*» GaAs Support 1C BGV 503/BGV 903 Preliminary Data Sheet Negative Voltage Generator for biasing GaAs FET and Power Amplifier Support chips - BGV 503, BGV 903 - for cellular phones • BGV 503: one-stage charge-pump with additional regulator for biasing GaAs-FET’s

transistor smd CF rs

Abstract: transistor smd marking mx transistor smd cf CF 750
Contextual Info: GaAs MMIC CF 750 Data Sheet • • • • • • Biased Dual Gate GaAs FET For frequencies from 400 MHz to 3 GHz For mixer and amplifier applications, i.e LNA- and buffer stages in handheld equipment Low power consumption, 2 mA operating current typ. Operating voltage range: 3 to 6 V

transistor smd CF rs

Abstract: transistor smd marking mx smd marking CF marking K gaas fet gaas fet marking B FET GAAS marking a MARKING CF smd marking cf rl MMIC marking CODE cf RF smd code SOT143 Package
Contextual Info: GaAs MMIC CF 750 Data Sheet • • • • • • Biased Dual Gate GaAs FET For frequencies from 400 MHz to 3 GHz For mixer and amplifier applications, i.e LNA- and buffer stages in handheld equipment Low power consumption, 2 mA operating current typ. Operating voltage range: 3 to 6 V

Contextual Info: P r e l i m in a r y d a t a s h e e t , B G V 5 0 3 , Ma y 2 0 0 2 BGV 503 Negative Voltage Generator for biasing GaAs FETs and Po w e r A m p l i f ie r s W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-11-09 2002-05-16

FMC141401-02

Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
Contextual Info: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking

BGV503

Contextual Info: Data sheet, BGV503, November 2002 BGV503 Negative Voltage Generator for biasing GaAs FETs and Power Amplifiers Wireless Si l i c on Di s c rete s N e v e r s t o p t h i n k i n g . Edition 2001-11-09 2002-11-11 Published by Infineon Technologies AG, St.-Martin-Strasse 53,

Contextual Info: P r e l i m in a r y d a t a s h e e t , B G V 5 0 3 , J u n e 2 0 0 2 BGV 503 Negative Voltage Generator for biasing GaAs FETs and Po w e r A m p l i f ie r s W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-11-09 2002-06-11

FET GAAS marking a

Abstract: BGV503
Contextual Info: Data sheet, BGV503, November 2002 BGV503 Negative Voltage Generator for biasing GaAs FETs and Power Amplifiers Wireless Si l i c on Di s c rete s N e v e r s t o p t h i n k i n g . Edition 2001-11-09 2002-11-11 Published by Infineon Technologies AG, St.-Martin-Strasse 53,

transistor marking E39

Abstract: E1491 E407 transistor E391 E308 E138 e696 E302 e798 marking E72
Contextual Info: GaAs GaAs FIELD EFFECT TRANSISTOR Small Signal FETs XMFS Series XMFS Series are designed for low noise applications up to C-band to 6GHz . These devices are supplied in the plastic packages. (SOT-143) cFEATURES 1. Low Noise Figure. 2. High Associated Gain.

marking code C1d SMD

Abstract: smd C1D lowpassfilter marking bgv MARKING CODE SMD IC 503
Contextual Info: GaAs Support IC BGV 503/BGV 903 Preliminary Data Sheet Negative Voltage Generator for biasing GaAs FET and Power Amplifier Support chips – BGV 503, BGV 903 – for cellular phones • BGV 503: one-stage charge-pump with additional regulator for biasing GaAs-FET’s

MMIC marking code R

Abstract: cf rt marking code
Contextual Info: Infineon ♦Bihncloçjiâï GaAs MMIC CF 750 Data Sheet • • • • • • Biased Dual Gate GaAs FET For frequencies from 400 MHz to 3 GHz For mixer and amplifier applications, i.e LIMA- and buffer stages in handheld equipment Low power consumption, 2 mA operating current

marking code C1d SMD

Abstract: smd C1D Q62702-L0131 Q62702-L0132 marking bgv P-TSSOP-10-1 5v regulator c2pr
Contextual Info: GaAs Support IC BGV 503/BGV 903 Preliminary Data Sheet Negative Voltage Generator for biasing GaAs FET and Power Amplifier Support chips – BGV 503, BGV 903 – for cellular phones • BGV 503: one-stage charge-pump with additional regulator for biasing GaAs-FET’s

Siemens A 1458

Abstract: FET marking code 365
Contextual Info: SIEMENS CLY15 GaAs FET Datasheet * Power am plifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz 'O p e ra tin g voltage range: 2.7 to 6 V * P ^ at V 0=3V, f= 1.8 GHz typ. 31.5 dBm * Efficiency better 50% s s ~ /7 / d ^ ESD: G Electrostatic discharge sensitive device,

MMIC "SOT 89" marking

Abstract: marking HLEH Siemens MMIC MMIC marking code GA
Contextual Info: SIEM EN S CF 750 GaAs MMIC Datasheet * Biased Dual Gate GaAs FET * For frequencies from 400 MHz to 3 GHz * Mixer and amplifier applications in handheld equipment * Low power consumption, 2mA operating current typ. * Operating voltage range: 3 to 6V * Ion-implanted planar structure

CLY10

Contextual Info: SIEMENS CLY10 GaAs FET D a t a s h e e t * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * P „1Tat Vn=3V, f=1,8GHz 28.5 dBm typ. * High efficiency better 55 % 3 p k S 2 1 ESD: V PSC5 I6 J

MARKING CF

Abstract: siemens gaas fet siemens PG 750 Q62702-F1391 PG 750 8 PIN marking 340 mmic MMIC SOT 89 marking CODE MMIC marking CODE 06
Contextual Info: CF 750 GaAs MMIC Datasheet * Biased Dual Gate GaAs FET * For frequencies from 400 MHz to 3 GHz * Mixer and amplifier applications in handheld equipment

transistor smd code marking 561

Abstract: sot-223 MARKING CODE 718 smd marking 271 Sot
Contextual Info: GaAs FET CLY 15 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 31.5 dBm Efficiency better 50% ESD: Electrostatic discharge sensitive device,

date code marking NEC

Abstract: code marking NEC NEC MARKING CODE RELAY code marking NEC NEC Date code Marking nec gaas fet marking gaas fet marking a NEC PART NUMBER MARKING gaas fet marking C P13560EJ2V0DS
Contextual Info: PRELIMINARY DATA SHEET Solid State Relay OCMOS FET PS7200H-1A 4-PIN SOP, 2.2 Ω LOW ON-STATE RESISTANCE 1-ch Optical Coupled MOS FET DESCRIPTION The PS7200H-1A is a low on-state capacitance solid state relay containing a GaAs LED on the light emitting side

MMIC marking CODE cf

Abstract: ma com 4 pin mmic A7560
Contextual Info: SIEMENS CF 750 GaAs MMIC D a t a s h e e t * Biased Dual Gate G a A s FET * For frequencies from 400 M Hz to 3 GHz * Mixer and amplifier applications in handheld equipment * Low power consumption, 2mA operating current typ. * Operating voltage range: 3 to 6V

transistor smd code marking 561

Abstract: GPS05560 Q62702-L99 s-parameter s11 s12 s21
Contextual Info: GaAs FET CLY 15 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 31.5 dBm Efficiency better 50% ESD: Electrostatic discharge sensitive device,

transistor marking YD ghz

Abstract: EHT07317
Contextual Info: Infineon fsclin clog iei GaAs FET CF 739 Data Sheet • N-channel dual-gate GaAs MESFET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e.g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device,

WL431003667

Abstract: TRANSISTOR SMD MARKING CODE 703 TRANSISTOR SMD MARKING CODE 723 smd transistor marking p1 TRANSISTOR SMD MARKING CODE 512
Contextual Info: GaAs FET CLY 10 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V VD = 3 V, f = 1.8 GHz, POUT = 28.5 dBm typ. High efficiency better 55% ESD: Electrostatic discharge sensitive device,