MARKING K1 SOT363 Search Results

smd diode marking A3 sot363

Abstract: sot363 aaa
Contextual Info: BAT754L Schottky barrier triple diode 22 November 2012 Product data sheet 1. Product profile 1.1 General description Three internal isolated planar Schottky barrier diodes with an integrated guard ring for stress protection,encapsulated in very small SOT363 Surface-Mounted Device SMD

Contextual Info: BAV99S 250mW High Speed Switching Array Small Signal Diode SOT-363 Features Fast Switching Speed H J High Reverse Breakdown Voltage Rating Moisture sensitivity level 1 I Matte Tin Sn lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant

marking K1 sot363

Abstract: marking code k1 Marking d12 Marking Code D12 packing d12 k1 marking code k1 marking
Contextual Info: BAV99S 250mW High Speed Switching Array Small Signal Diode SOT-363 Features Fast Switching Speed H J High Reverse Breakdown Voltage Rating Moisture sensitivity level 1 I Matte Tin Sn lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant

k1 nxp

Contextual Info: BAT74S Dual Schottky barrier diode 22 November 2012 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier dual diode with an integrated guard ring for stress protection. Two electrically isolated Schootky barrier diodes encapsulated in a very small SOT363

marking K1 sot363

Abstract: marking code k1 B11 marking code
Contextual Info: BAV99S 250mW High Speed Switching Array Small Signal Diode SOT-363 Features —Fast Switching Speed H J —High Reverse Breakdown Voltage Rating —Moisture sensitivity level 1 I —Matte Tin Sn lead finish with Nickel(Ni) underplate —Pb free version and RoHS compliant

marking K1 sot363

Abstract: marking code k1
Contextual Info: BAV99S 250mW High Speed Switching Array Small Signal Diode SOT-363 Features —Fast Switching Speed H J —High Reverse Breakdown Voltage Rating —Moisture sensitivity level 1 I —Matte Tin Sn lead finish with Nickel(Ni) underplate —Pb free version and RoHS compliant

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BAV99 DIODE HIGH CONDUCTANCE ULTRA FAST DIODE „ EQUIVALENT For 3 Pin Package *Pb-free plating product number: BAV99L For 6 Pin Package „ ORDERING INFORMATION Ordering Number Normal Lead Free Plating BAV99-AE3-R BAV99L-AE3-R

marking K1 sot363

Abstract: DBAV99 bav99 diode Diode BAV99 SOT23 Electronic Designs bav99 BAV99L BAV99 SOT 23 DATA SHEET Diode bav99 sot a1 BAV99-AE3-R
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BAV99 DIODE HIGH CONDUCTANCE ULTRA FAST DIODE „ EQUIVALENT For 3 Pin Package Lead-free: BAV99L Halogen-free:BAV99G For 6 Pin Package „ ORDERING INFORMATION Normal BAV99-AE3-R BAV99-AL3-R BAV99-AN3-R BAV99-AL6-R Ordering Number

marking K1 sot363

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BAV99 DIODE HIGH CONDUCTANCE ULTRA FAST DIODE  EQUIVALENT  ORDERING INFORMATION Ordering Number BAV99G-AE3-R BAV99G-AL3-R BAV99G-AN3-R BAV99G-AL6-R Note: Pin Assignment: A: Anode  Package SOT-23 SOT-323 SOT-523 SOT-363

BAV99

Abstract: BAV99G-AE3-R
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BAV99 DIODE HIGH CONDUCTANCE ULTRA FAST DIODE „ EQUIVALENT For 3 Pin Package For 6 Pin Package „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free BAV99L-AE3-R BAV99G-AE3-R BAV99L-AL3-R BAV99G-AL3-R BAV99L-AN3-R BAV99G-AN3-R

Contextual Info: BAV99S 250mW High Speed Switching Array Small Signal Product SOT-363 Features ◇ Fast switching speed ◇ High reverse breakdown voltage rating ◇ Moisture sensitivity level 1 ◇ Matte Tin Sn lead finish with Nickel(Ni) underplate ◇ Pb free version and RoHS compliant

marking v99

Abstract: marking K1 sot363 CTIF SOT23 BAV99 BAV99-AE3-R BAV99-AL3-R BAV99-AN3-R BAV99L K2 SOT23-3 TE SOT363-3
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BAV99 DIODE HIGH CONDUCTANCE ULTRA FAST DIODE 3 3 1 2 EQUIVALENT 3 K A A K 2 SOT-323 SOT-23 3 6 2 1 5 4 1 SOT-523 1 1 2 2 3 SOT-363 For 3 Pin Package 5 6 1 *Pb-free plating product number: BAV99L 4 3 2 For 6 Pin Package ORDERING INFORMATION

marking 320 SOT-363

Abstract: marking K1 sot363
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BAT54ADW Preliminary DIODE SCHOTTKY BARRIER DUAL DIODES „ DESCRIPTION 6 5 Planar Schottky barrier diodes are encapsulated in the SOT-363 small plastic SMD package. Single diodes and dual diodes with different pin configuration are available.

DIODE smd marking k1

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BAT54ADW Preliminary DIODE SCHOTTKY BARRIER DUAL DIODES „ DESCRIPTION 6 5 Planar Schottky barrier diodes are encapsulated in the SOT-363 small plastic SMD package. Single diodes and dual diodes with different pin configuration are available.

SOT23 component marking code 5a

Contextual Info: D5V0L2B3SO Features Mechanical Data • • • • • • • • Provides ESD Protection per IEC 61000-4-2 Standard: Air – ±30kV, Contact – ±30kV 2 Channels of Bi-Directional ESD Protection Low Channel Input Capacitance Typically Used in Cellular Handsets, Portable Electronics,

smd j3y

Abstract: SOT89 MARKING CODE SMD MARKING CODE j3y SOT-23 J3Y j3y smd smd code marking wl sot23 k72 sot-23 marking f5 sot-89 smd 2TY SOT-23 MARKING ka6
Contextual Info: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices PN# 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR 2SA1162-O

Contextual Info: D5V0L2B3SO Features Mechanical Data • • • • • • • • Provides ESD Protection per IEC 61000-4-2 Standard: Air – ±30kV, Contact – ±30kV 2 Channels of Bi-Directional ESD Protection Low Channel Input Capacitance Typically Used in Cellular Handsets, Portable Electronics,

K1 SOT-363

Abstract: marking K1 smd diode arrays marking K1 sot363 K1 Package SMD marking code K1 DIODE
Contextual Info: BAV99S Surface Mount Fast Switching Diodes SOT-323 Features — High switching speed. — For general purpose switching application. — Small plastic SMD speed. — Low capacitance. — Two electrically isolated series configuration arrays. Dimensions in inches and millimeters

k72 sot-23

Abstract: sot-23 Marking KN 72k SOT23 k72 r4 UM6K1 SI2302 SI2303
Contextual Info: TM Micro Commercial Components MOSFETS MCC Part Number Power Rating DrainSource Voltage Gate Threshold Voltage Drain Current Static DrainSource On Resistance PD VDS VGS ID rDS on (mW) V V mA Ω Polarity Marking Code Package Type Internal Diagram SMALL SIGNAL MOSFETS

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Diodes BAV99S HIGH-SPEED SWITCHING DIODE SOT-363 FEATURES  Small Plastic Package  High Switching Speed  Low Capacitance  Two Electrically Isolated Series Configuration Arrays

Motorola transistor smd marking codes

Abstract: SMD TRANSISTOR MARKING 5c SMD code smd TRANSISTOR code marking 2F toshiba smd marking code transistor TRANSISTOR SMD MARKING CODE 1P smd transistor 5c Diode SOT-23 marking 15d SMD TRANSISTOR MARKING 6B TRANSISTOR SMD MARKING CODE 1d
Contextual Info: Eugene Turuta 2 - pins SOT - 89 databook 3 - pins Acti ve Activ SMD components mar king codes marking Introduction SMD-codes for semiconductor components in 3-pins cases SMD-codes for semiconductor components in SOT-89 cases SMD-codes for semiconductor components in BGA and LPP cases

Contextual Info: ASMCC0096 APPLICATION SPECIFIC MULTI CHIP CIRCUIT NEW PRODUCT Features • · Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes SOT-363 A Mechanical Data · · · · · · · · B C Case: SOT-363, Molded Plastic Case material - UL Flammability Rating

ASMCC0096

Abstract: ASMCC0096-7 J-STD-020A MMBT3904 a96 sot ASMCC K1 transistor
Contextual Info: ASMCC0096 APPLICATION SPECIFIC MULTI CHIP CIRCUIT ASMCCTM NEW PRODUCT Features • · Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes SOT-363 A Mechanical Data · · · · · · · · B C Case: SOT-363, Molded Plastic Case material - UL Flammability Rating

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS UM6K1N SOT-363 Dual N-channel MOSFET FEATURES 1 Two 2SK3018 transistors in a package. 2) The MOS FET elements are independent, eliminating mutual interference. 3) Mounting cost and area can be cut in half.