MARKING LW Search Results
MARKING LW Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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5962-8950303GC |
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ICM7555M - Dual Marked (ICM7555MTV/883) |
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MG80C186-10/BZA |
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) |
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54ACT244/B2A |
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54ACT244/B2A - Dual marked (5962-8776001B2A) |
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ICM7555MTV/883 |
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ICM7555MTV/883 - Dual marked (5962-8950303GA) |
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MQ80186-8/BYC |
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80186 - Microprocessor, 16-Bit - Dual marked (8501001YC) |
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MARKING LW Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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B12 GDM
Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
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GP15M 0621X SB340 DO-204AC/ DO-204AL DO-201AD/ P600/MPG06 MPG06 VTS40100CT B12 GDM BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a | |
1721E50R
Abstract: Marking Codes Philips MARKING CODE 2327E40R marking codes transistors LAE4001R transistor 502 r8 marking marking Code philips
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LAE4001R LAE4002S LBE2003S LBE2009S LCE2009S LEE1015T LTE21009R LTE21015R LTE21025R LTE42005S 1721E50R Marking Codes Philips MARKING CODE 2327E40R marking codes transistors transistor 502 r8 marking marking Code philips | |
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
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GP15M 1N4005 1N4005/Logo DO-204AC 24-Jun-04 DO-204AL GENERAL SEMICONDUCTOR MARKING mJ SMA ED kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A | |
A09 N03 MOSFET
Abstract: marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23
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AD1580-A AD1580-B AD1582-A AD1582-B AD1582-C AD1583-A AD1583-B AD1583-C AD1584-A AD1584-B A09 N03 MOSFET marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23 | |
Fuji Electric SMContextual Info: X 1. SCOPE This s p e c ific a tio n provides the ratings and the te s t requirement for FUJI SILICON DIODE YG801C09R 2. POT VIEW • MARKING- MOLDING RESIN 1 Out view is shown {2) Marking is shown I t is marked to type name or abbreviated type name, p o la rity and Lot No. |
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YG801C09R Fuji Electric SM | |
transistors marking C3Z
Abstract: marking C3Z CMPTA44
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CMPTA44 OT-23 TheCENTRALSEMICONDUCTORCMPTA44 100mA transistors marking C3Z marking C3Z CMPTA44 | |
power supply 50w 24v
Abstract: LWD50-0512 LWD30-0512 LWD30-0524 LWD50-1515 marking CH1 20A12V LWD301515 LWD15-0512 LWD15-0524
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LWD50 265VAC LWD30 LWD15 265VAC DC110 35omer MAW-1201-22 LWD30 power supply 50w 24v LWD50-0512 LWD30-0512 LWD30-0524 LWD50-1515 marking CH1 20A12V LWD301515 LWD15-0512 LWD15-0524 | |
Contextual Info: SMT-Power-Induktivitäten SMT Power Inductors B82464-A4 Ungeschirmt B82464-A4 Unshielded Klimakategorie: Anschlüsse: Lötbarkeit: Beschriftung: Climatic category: Terminals: Solderability: Marking: Lieferform: VE: LR 2±0,2 10±0,2 Ansicht von unten Bottom view |
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B82464-A4 SSB1848-P 04153-K B82464-A4223-K B82464-A4333-K B82464-A4473-K B82464-A4683-K B82464-A4104-K B82464-A4154-K | |
Contextual Info: Central Semiconductor Corp. CBAS17 LOW VOLTAGE STABISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAS17 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. Marking code is A91. SOT-23 CASE MAXIMUM RATINGS TA=25°C |
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CBAS17 OT-23 100mA G0D171S | |
NCP5380 D
Abstract: NCP5380 488AM
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NCP5380, NCP5380A NCP5380/D NCP5380 D NCP5380 488AM | |
Contextual Info: LWD-SERIES IMBM A DENSEI-LAMBDA Dual output 1 5 W - 5 0 W • Model name LWD 50[ Name of series Output voltage 1212:12V,12V | Ex. of display 0512:5V, 12V Output power: 1 5W, 30W, SOW 0524: 24^ ■ Features • C€ marking {Low Voltage Directive): E. L. V output |
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265VAC 265VAC LWD15 MAW-1201-22 30/LW MAW-1202-22 LWD50 LWD30 | |
Contextual Info: NCP5380, NCP5380A 7-Bit, Programmable, Single-Phase, Synchronous Buck Switching Regulator Controller http://onsemi.com General Description MARKING DIAGRAM 1 1 NCP5380 = Specific Device Code A = Assembly Location WL = Wafer Lot YY = Year WW = Work Week G = Pb Free Package |
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NCP5380, NCP5380A NCP5380 NCP5380/D | |
LWD30-0512
Abstract: 2KVAC LWD15-0524 LWD15-0512 LWD15-1212 LWD50 15W-50W aw1202 15w50
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5W-50W 265VAC 265VAC LWD50 LWD15 LWD30 LWD30-0512 2KVAC LWD15-0524 LWD15-0512 LWD15-1212 LWD50 15W-50W aw1202 15w50 | |
transistor Y2
Abstract: Y2 TRANSISTOR marking 002 marking Y2 transistor transistor marking y2 marking A1 TRANSISTOR complementary npn-pnp power transistors FMB3946 Supersot 6 Supersot6
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FMB3946 100mA 100MHz 100MHz 10OuA, fmb3946 lwpPr23 transistor Y2 Y2 TRANSISTOR marking 002 marking Y2 transistor transistor marking y2 marking A1 TRANSISTOR complementary npn-pnp power transistors Supersot 6 Supersot6 | |
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h140
Abstract: TK11 TK11823 TK11823M 5CDM-658BN-1085 DB3-H140
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TK11823M DB3-H140 TK11823M. TK11823* QH7-B110. DP3-F016. h140 TK11 TK11823 TK11823M 5CDM-658BN-1085 DB3-H140 | |
39CA
Abstract: DN 6V8A 6v8a 6v8ca transil sm6t 6V8C 39CA 144 33cA SM6T 68CA SM6T15 DW
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100CA 150CA 200CA 39CA DN 6V8A 6v8a 6v8ca transil sm6t 6V8C 39CA 144 33cA SM6T 68CA SM6T15 DW | |
"MARKING TE" US6
Abstract: 2301 mini transistor
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TE12L. TE12H. "MARKING TE" US6 2301 mini transistor | |
Contextual Info: SMT Power Inductors SMT-Power-Induktivitäten 0. 1 1. 4± 2± 2. • Baugröße: 4.8 x 4.8 x 1.2 mm ■ Kernmaterial: Ferrit ■ RoHS-kompatibel (siehe Seite 112) Climatic category: 55/125/56 Terminals: Lead-free tinned Solderability: Reflow soldering Marking: |
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B82470A 12-mm IND031103M000 B82470A1153M000 B82470A1223M000 B82470A1333M000 B82470A1473M000 IND0396-I IND0397-K | |
Contextual Info: MICRON I 1 SEMICONDUCTOR INC. MT10D140 MEG X 40 DRAM MODULE 1 MEG x 40 DRAM DRAM MODULE FAST PAGE MODE MT10D140 LOW POWER, EXTENDED REFRESH (MT10D140 L) FEATURES MARKING OPTIONS • Tim ing 60ns access 70ns access 80ns access -6 -7 -8 Packages Leadless 72-pin SIMM (gold) |
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MT10D140 MT10D140) MT10D140 72-pin er/128m MT10D140G-6 T10D140isarandom MT100140 0011SS1 | |
micron DRAMContextual Info: MT8D88C132H S , MT16D88C232H(S) 4MB, 8MB DRAM CARDS MICRON I TbCHNOLCOY INC. DRAM MINICARD 4, 8 MEGABYTES 1 MEG, 2 MEG x 32; 5V, FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES • • • • • • • • • OPTIONS MARKING • Timing 60ns access 70ns access |
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MT8D88C132H MT16D88C232H micron DRAM | |
Contextual Info: PRELIMINARY l^ iiczn o N 16K LATCHED SRAM X MT56C16K16B2 16 LATCHED SRAM 16K X 16 SRAM WITH ADDRESS/ DATA INPUT LATCHES, BYTE ENABLES • • • • • • • OPTIONS MARKING • Timing 12ns access 15ns access 20ns access 25ns access -12 -15 -20 -25 • Packages |
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MT56C16K16B2 52-pin | |
Contextual Info: P ip tO S AP9A405 I SEMICONDUCTOR 8192 x 9 Asynchronous CMOS FIFO Features word may consist of a standard eight-bit byte with a parity bit or block-marking/framing bit. • Fast access times: 20, 25,35 ns • Fast-fall-through time architecture based on CMOS |
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AP9A405 28-pin, 300-Mil IDT7205 AP9A405 AP9A405-20PC 28-Pin AP9A405-25PC | |
transistor Y4
Abstract: marking 004 Supersot 6 complementary npn-pnp marking Y4 FMB1020 150MA80
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FMB1020 300mA. 100uA 100mA 150mA 200mA, 100MHz 100uA, fmb1020 transistor Y4 marking 004 Supersot 6 complementary npn-pnp marking Y4 150MA80 | |
SMBJ8.5CA
Abstract: SMBJ15A SMBJ11CA SMBJ130A SMBJ170A SMBJ130CA SMBJ17A SMBJ14CA SMBJ58A SMBJ100A
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DO-214AA) SMBJ300A SMBJ300CA SMBJ350 SMBJ350C SMBJ350A SMBJ350CA SMBJ400 SMBJ400C SMBJ400A SMBJ8.5CA SMBJ15A SMBJ11CA SMBJ130A SMBJ170A SMBJ130CA SMBJ17A SMBJ14CA SMBJ58A SMBJ100A |